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At least 1,063 records · Page 59

Neutral Silicon Vacancy Centers in Undoped Diamond via Surface Control

Neutral silicon vacancy centers (SiV 0 ) in diamond are promising candidates for quantum applications; however, stabilizing SiV 0 requires high-purity, boron-doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV 0 centers display optically detected magnetic resonance and bulklike optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV 0 centers, as well as charge state engineering of other defects.

74 ATOMIC AND MOLECULAR PHYSICS↗

Quantum Nonlinear Acoustic Hall Effect and Inverse Acoustic Faraday Effect in Dirac Insulators

Here, we propose to realize the quantum nonlinear Hall effect and the inverse Faraday effect through the acoustic wave in a time-reversal invariant but inversion broken Dirac insulator. We focus on the acoustic frequency much lower than the Dirac gap such that the interband transition is suppressed and these effects arise solely from the intrinsic valley-contrasting band topology. The corresponding acoustoelectric conductivity and magnetoacoustic susceptibility are both proportional to the quantized valley Chern number and independent of the quasiparticle lifetime. The linear and nonlinear components of the longitudinal and transverse topological currents can be tuned by adjusting the polarization and propagation directions of the surface acoustic wave. The static magnetization generated by a circularly polarized acoustic wave scales linearly with the acoustic frequency as well as the strain-induced charge density. Our results unveil a quantized nonlinear topological acoustoelectric response of gapped Dirac materials, like hexagonal boron nitride and transition-metal dichalcogenide, paving the way toward room-temperature acoustoelectric devices due to their large band gaps.

36 MATERIALS SCIENCE↗

Instability and evolution of the magnetic ground state in metallic perovskites GdRh 3 C 1-x B x

In this paper, we report investigations of the structural, magnetic, electrical transport and thermal properties of five compositions of the metallic perovskite GdRh 3 C 1–x B x (0.00 ≤ x ≤ 1.00). Our results show that all the five compositions undergo magnetic ordering at low temperatures, but the nature of the ordered state is significantly different in the carbon- and the boron-rich compositions, where the former shows signatures of an amplitude-modulated magnetic structure and the latter exhibits evidences of an equal-moment incommensurate antiferromagnetic ordering. We also observe a remarkable field-dependent evolution of conduction carrier polarization in the compositionally disordered compounds. The outcomes indicate that this system is energetically situated in proximity to a magnetic instability where small variations in the control parameter(s), such as lattice constant and/or electron density, lead to considerably different ground states.

36 MATERIALS SCIENCE↗

Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder

Using time-resolved optical Kerr rotation, here we measure the low-temperature valley dynamics of resident electrons and holes in exfoliated WSe 2 monolayers as a systematic function of carrier density. In an effort to reconcile the many disparate timescales of carrier valley dynamics in monolayer semiconductors reported to date, we directly compare the doping-dependent valley relaxation in two electrostatically gated WSe 2 monolayers having different dielectric environments. In a fully encapsulated structure ( hBN / WSe 2 / hBN , where hBN is hexagonal boron nitride), valley relaxation is found to be monoexponential. The valley relaxation time τ v is quite long ( ~ 10 μ s ) at low carrier densities, but decreases rapidly to less than 100 ns at high electron or hole densities ≳ 2 × 10 12 cm – 2 . In contrast, in a partially encapsulated WSe 2 monolayer placed directly on silicon dioxide ( hBN / WSe 2 / SiO 2 ) , carrier valley relaxation is multiexponential at low carrier densities. The difference is attributed to environmental disorder from the SiO 2 substrate. Unexpectedly, very small out-of-plane magnetic fields can increase τ v , especially in the hBN / WSe 2 / SiO 2 structure, suggesting that localized states induced by disorder can play an important role in depolarizing spins and mediating the valley relaxation of resident carriers in monolayer transition-metal dichalcogenide semiconductors.

36 MATERIALS SCIENCE↗

Bulk electronic structure of lanthanum hexaboride (LaB 6 ) by hard x-ray angle-resolved photoelectron spectroscopy

In the last decade rare-earth hexaborides have been investigated for their fundamental importance in condensed matter, and for their applications in advanced technological fields. Among these compounds, LaB 6 has a special place, being a traditional d-band metal without additional f- bands. In order to understand the bulk electronic structure of the more complex rare-earth hexaborides, in this paper we investigate the bulk electronic structure of LaB 6 using tender/hard x-ray photoemission spectroscopy, measuring both core-level and angle-resolved valence-band spectra. Furthermore, we compare the La 3d core level spectrum to cluster model calculations in order to understand the bulk-like core-hole screening effects. The results show that the La 3d well-screened peak is at a lower binding energy compared to the main poorly-screened peak; the relative intensity between these peaks depends on how strong the hybridization is between La and B atoms. Here, we show that the recoil effect, negligible in the soft x-ray regime, becomes prominent at higher kinetic energies for lighter elements, such as boron, but is still negligible for heavy elements, such as lanthanum. In addition, we report the bulk-like band structure of LaB6 determined by tender/hard x-ray angle-resolved photoemission spectroscopy (HARPES). We compare HARPES experimental results to the free-electron final-state calculations and to the more precise one-step photoemission theory including matrix element and phonon excitation effects. The agreement between the features present in the experimental ARPES data and the theoretical calculations is very good. In addition, we consider the nature and the magnitude of phonon excitations in order to interpret HARPES experimental data measured at different temperatures and excitation energies. We demonstrate that one step theory of photoemission and HARPES experiments provide, at present, the only approach capable of probing, both experimentally and theoretically, true “bulk-like” electronic band structure of rare-earth hexaborides and strongly correlated materials.

36 MATERIALS SCIENCE↗

Dielectric screening at TMD:hBN interfaces: Monolayer-to-bulk transition, local-field effect, and spatial dependence

The dielectric effects of a substrate have been shown to be important for modulating the electronic properties of an adsorbate, especially in van der Waals heterostructures. Here, using the first-principles dielectric embedding GW approach within the framework of many-body perturbation theory, we perform a case study on the dielectric screening effects of hexagonal boron nitride (hBN) on various transition-metal dichalcogenides (TMDs). We consider three systems, monolayer MoS 2 , bilayer MoS 2 , and a mixed WS 2 /MoS 2 bilayer adsorbed on hBN, and examine three aspects of the substrate dielectric screening: (i) the thickness dependence and the monolayer-to-bulk transition, for which we consider the effects of one-, two-, three-, and four-layer hBN; (ii) the local-field effect, for which we numerically assess a common approximation of neglecting the in-plane local-field components of the substrate polarizability; and (iii) the spatial dependence, for which we consider the mixed WS 2 /MoS 2 bilayer adsorbed on hBN with either side facing the substrate. Finally, our results provide quantitative insight into how the substrate screening effects can be leveraged for band structure engineering.

36 MATERIALS SCIENCE↗

Size-dependent ferroelectric-to-paraelectric sliding transformations and antipolar-to-ferroelectric topological phase transitions in binary homobilayers

The recent discovery of ferroelectric behavior in few-layer materials, accompanied by the observation of antipolar domains in hexagonal boron nitride and transition metal dichalcogenide moiré bilayers, is paving the way for revolutionary advancements in the generation and manipulation of intrinsic electric dipoles through stacking. In addition, these cutting-edge quantum materials are reshaping our comprehension of phase transitions. Within the present paper, we unveil a size-dependent sliding behavior that marks a significant departure from conventional ferroelectrics. We also shed light on thermally induced spontaneous hyperlubric sliding within moiré bilayers, which can be used as a signal to distinguish topological phase transitions from an antipolar onto a ferroelectric bilayer. Furthermore, our findings also suggest that the (topological) pinning of AA nodes in antipolar moiré homobilayers prevents the occurrence of an antipolar-to-paraelectric transformation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ab initio prediction of FeCr sigma (001)/FCC Fe(111) interfacial energy: Effect of interfacial doping of C, B, and N

Interfacial energy plays a crucial role for high-temperature material systems in determining their microstructure evolution and mechanical properties. Optimizing the interfacial energy through doping can improve the stability, performance, and overall functionality of these materials. Here, the present study delivers theoretical investigation on the sigma FeCr (001)//FCC Fe (111) interfacial energy using ab initio methods, focusing on the implications of interfacial doping with important interstitial elements carbon (C), boron (B), and nitrogen (N). The calculated interfacial energy without doping is 0.183J/m 2 . Upon doping, notable reductions in interfacial energy were observed. Doping with B decreased the interfacial energy to 0.046J/m 2 , with single C doping to 0.126J/m 2 , with two C doping to 0.098J/m 2 , and with a single N doping to 0.071J/m 2 . These findings not only shed light on the atomistic origin for the effect of stabilizing the microstructure of stainless steel at elevated temperatures by interstitial doping, but also present a systematic, thorough ab initio approach to predict interfacial doping properties and guide alloy design to enhance the performance and stability.

FeCr sigma phase↗

Electronic bonding transitions in oxide glass above two megabar pressures

Inelastic x-ray scattering (IXS) of B 2 O 3 glass up to ∼2.2 Mbar reveals electronic bonding transitions in oxide glasses. B -edge IXS identifies the high-energy feature above ∼1.4 Mbar and a gradual increase in its intensity toward ∼2.2 Mbar, indicating the formation of hypervalent boron via electron polarization to oxygen atoms. The pressure-driven high energy shifts in O -edge IXS indicate pronounced electronic dispersion that increases upon densification of amorphous oxides above ∼2 Mbar. The extent of the energy shifts and enhanced polarization correlate with increasing atomic radius of cation in oxide glass, establishing the role of cation radius in electronic structures of amorphous oxides under compression. The results elucidate the electronic mechanisms behind the structural transformation in low- oxide glasses, where transitions to highly coordinated cations are hindered well above 1 Mbar, providing the origin of incompressibility of low- amorphous oxide under multi-Mbar compression. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Machine Learning to Select Experiments Driven by Fundamental Science and Applications for Targeted Nuclear Data Improvement

This work describes a blueprint for a process that accelerates progress in science by quantitatively answering the following question: What is the optimal combination of fundamental-science and application-driven experiments to maximally reduce pertinent data uncertainties? Answering this question entails solving a high-dimensional and complex optimization problem that is best solved with advanced statistic techniques often classified as machine learning. We apply this process within the framework of nuclear data with the aim to select an experiment combination that will reduce uncertainties in 239 Pu nuclear data for neutron energies between 1 and 600 keV. In this field, fundamental-physics driven data, called differential, look at one nuclear physics observable at a time. They are contrasted to application-driven, integral, data where one or few resulting values inform a broad set of nuclear data across several nuclides and energies. The candidates for integral experiments are criticality measurements that were refined by a genetic algorithm to be maximally sensitive to 239 Pu fission cross sections in the desired energy range. Twenty-three candidate differential experiments were investigated and span multiple nuclear physics observables (e.g., total, capture cross sections) for isotopes appearing in the integral experiments. The optimal combination among these candidate experiments was investigated via generalized least squares fitting, augmented with Gaussian processes to ameliorate statistical irregularities in data, and the D-optimality criterion. The latter evaluates for each pair of candidates the joint reduction in uncertainties of all 12200 nuclear data appearing in the integral experiments compared to the knowledge we have from 168 past experiments, theory, and nuclear data. We chose as differential measurements those that investigate 63 Cu and 239 Pu total cross sections, based on D-optimality rank and feasibility constraints. Two integral (criticality) experiments were selected: An experiment with Al 2 ⁢O 3 and graphite interleaved with Pu and a thick Cu reflector explores 1–30 keV, while we target the 30–600 keV range with an experiment that swaps boron in place of graphite with a different geometry.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Pathways from a chiral superconductor to a composite Fermi liquid

Recent experiments have reported chiral time-reversal broken superconductivity in n-layer rhombohedral graphene for n=4,5,6. Introducing a moiré potential by alignement with a hexagonal boron nitride substrate suppresses the superconductivity but leads instead to various fractional quantum anomalous Hall phenomena. Motivated by these observations, we consider the fate of the phase transition between (a chiral) Landau Fermi liquid (LFL) metal and a Composite Fermi Liquid (CFL) metal in the presence of attractive interactions. These are parent states, respectively, for the superconductor and the fractional quantum Hall states. For weak attractive interactions, the LFL is usually unstable to superconductivity while the CFL is stable. This raises the possibility of a direct continuous phase transition between the chiral superconductor and the CFL. However, we show that generically the LFL close to the transition to the CFL is stable against superconductivity. Furthermore the evolution between the CFL and chiral superconductor goes through an intermediate stable LFL phase for weak attractive interactions. With stronger interactions, the evolution can instead go through a non-Abelian paired quantum Hall state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum confining excitons with an electrostatic moiré superlattice

Quantum confining excitons has been a persistent challenge in the pursuit of strong exciton interactions and quantum light generation. Unlike electrons, which can be readily controlled via electric fields, imposing strong nanoscale potentials on excitons to enable quantum confinement has proven challenging. In this study, we utilize piezoelectric force microscopy to image the domain structures of twisted hexagonal boron nitride (h – BN), revealing evidence of strong in-plane electric fields at the domain boundaries. By placing a monolayer MoSe 2 only one to two nanometers away from the twisted h – BN interface, we observe energy splitting of neutral excitons and Fermi polarons by several millielectronvolts at the moiré domain boundaries. By directly correlating local structural and optical properties, we attribute such observations to excitons confined in a nanoscale one-dimensional electrostatic potential created by the strong in-plane electric fields at the moiré domain boundaries. Intriguingly, this 1D quantum confinement results in pronounced polarization anisotropy in the excitons’ reflection and emission, persistent to temperatures as high as ~80 Kelvins. Furthermore, these findings open new avenues for exploring and controlling strongly interacting excitons for classical and quantum optoelectronics.

2-dimensional systems↗

Crystal structure of bis(1-mesityl-1 H -imidazole-κ N 3 )diphenylboron trifluoromethanesulfonate

The solid-state structure of bis(1-mesityl-1 H -imidazole-κ N 3 )diphenylboron trifluoromethanesulfonate, C 36 H 38 BN 4 + ·CF 3 SO 3 − or ( Ph 2 B(MesIm) 2 OTf ), is reported. Bis(1-mesityl-1 H -imidazole-κ N 3 )diphenylboron ( Ph 2 B(MesIm) 2 + ) is a bulky ligand that crystallizes in the orthorhombic space group Pbcn . The asymmetric unit contains one Ph 2 B(MesIm) 2 + cationic ligand and one trifluoromethanesulfonate anion that balances the positive charge of the ligand. The tetrahedral geometry around the boron center is distorted as a result of the steric bulk of the phenyl groups. Weak interactions, such as π–π stacking are present in the crystal structure.

Kouton, Aniffa↗

Development of APCVD BSG and POCl 3 Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication

This paper presents a commercially viable process for fabricating a high-quality double-side tunnel oxide passivating contact (DS-TOPCon) cell precursor using APCVD-deposited boron silicate glass and ex-situ POCl 3 diffusion in a single high-temperature step, eliminating the need for additional masking and diffusion processes. A two-tier temperature profile was developed, involving a pre-annealing at above 900°C in nitrogen (N2) ambient followed by POCl 3 diffusion at 840°C. We investigated the effect of varying pre-annealing temperatures, ranging from 875°C to 950°C, on the passivation quality and metal-Si contact properties of both n-TOPCon and p-TOPCon layers. The resultant DS-TOPCon cell precursor after silicon nitride (SiNX) passivation exhibited an excellent iV OC of close to 730 mV. In addition, a rapid asymmetric poly-Si thinning technique, developed in this work, enabled adjustment of the front n + poly-Si thickness while maintaining the rear p + poly-Si thickness. Two types of DS-TOPCon cell architectures can be fabricated: i) full-area thin (≈40nm) n-TOPCon layer on the front and ii) selective-area thick (≈200nm) n-TOPCon fingers underneath the metal grid. Device simulations suggest that full-area DS-TOPCon cell with 40 nm n + poly-Si and selective-area DS-TOPCon cell with 200 nm n + poly fingers on the front, fabricated from our current DS-TOPCon cell precursor, can achieve cell efficiencies of 22.1 and 23.5%, respectively. Detailed power loss analysis and device simulation reveal that further improvements in material and device parameters have potential to push the cell efficiencies of DS-TOPCon cell structure beyond 25%, making it a promising alternative to fabricate a high-efficiency next-generation solar cells at low cost.

14 SOLAR ENERGY↗

First Soft X-ray Quantum Efficiency Measurements on Microwave Annealed Thin-Entrance Window Sensors

Free electron lasers, such as SLAC’s LCLS-II, will provide unique scientific imaging opportunities. In order to fully utilize these facilities, we need to develop detectors with shallow entrance windows that will enable detection of soft x-rays from 250eV-1.5KeV. In addition, there are other light sources such as the FERMI, EuXFEL, and FLASH XFELs, as well as numerous synchrotrons such as the ALS, where soft x-ray science would benefit from detectors with higher quantum efficiency in the 20 eV to 1.5KeV range.A new microwave annealing technology provides an efficient way to achieve shallow entrance windows in fully depleted high-resistivity silicon sensors. Previously, SRP and SIMS measurements were used to characterize the shallow dopant profile, and sensors with the new entrance window process were deployed successfully to measure an Fe-55 x-ray spectrum. For the first time, we present quantum efficiency measurement for soft x-rays. Furthermore, the resulting estimate of the entrance window is 20nm for an arsenic implanted entrance window and 55nm for a boron implanted entrance window.

47 OTHER INSTRUMENTATION↗

Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Polysilicon on silicon oxide (poly-Si/SiO x ) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8 x 10^4 to 4.5 x 10^7 cm^-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm^2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm^2.

amorphous Si↗

Design, Optimization, and In-Depth Understanding of Front and Rear Junction Screen-Printed Double-Side Passivated Contacts Solar Cells

In this work, detailed numerical modeling is performed for front junction (FJ) and rear junction (RJ) n-type Si solar cells with screen-printed double-side poly-Si based tunnel oxide passivated contacts (TOPCon). Fundamental understanding of both structures is crucial to explore factors that limit the efficiency potential of the two designs. By investigating several key parameters such as front poly sheet resistance and thickness, bulk material properties, and carrier transport in our simulation model, we determine and explain why RJ cells outperform FJ cells. Our findings reveal that FJ suffers from present technological limitations of p-poly based passivated contacts, namely, i) large recombination observed in textured p-TOPCon emitter and ii) low solid solubility and hole mobility in boron-doped poly-Si resulting in very high sheet resistance of front p-poly layers which must be made thin to reduce absorption losses. In contrast, RJ desensitized the cell efficiency to front sheet resistance allowing application of ultra-thin front n-poly layers and is therefore ideally suited for double-side TOPCon cells. Lastly, we have developed a roadmap for efficiency projections of commercial-type screen-printed RJ and FJ topologies reaching ~24% and >22.5% efficiencies respectively, quantifying and explaining the impact of technological innovations on the performance of each design.

14 SOLAR ENERGY↗