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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,063 records · Page 59
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Impact of the localized wetting layer states on carrier relaxation processes in GaAs-based quantum dash structures

The exciton kinetics in the low strain InGaAs/GaAs structures with quantum dashes on a wetting layer has been examined by means of time-resolved photoluminescence and micro-photoluminescence. There has been proven a multistage relaxation process with a key role of the exciton localization within the wetting layer revealing also short radiative lifetime of excitons in the dashes as a consequence of a weak carrier confinement. The peculiar properties of the system can be responsible for the observation of pronounced biexciton sideband, which can be related to QDash biexciton interaction with excitons confined in the wetting layer potential fluctuations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Spin polarization in quantum Hall state obtained by Kerr rotation spectra

We developed a novel system for a high sensitive measurement of Kerr rotation spectra, and Kerr rotation spectra of quantum Hall system in AlGaAs/GaAs 17 nm quantum well were measured. Spin polarization of quantum Hall states was obtained by integrating the spectra, since Kerr rotation spectra reflect spin population of electrons. The spin polarization decreased rapidly on both sides of {nu} = 1, which is ascribed to Skyrmion effect. However, the spin polarization present a flat region around {nu} = 1 which means a quantum Hall ferromagnet is not fully spin polarized.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation leads to a bulk resistance over 1 MΩ, independent of applied magnetic fields. In addition, ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Photoreflectance and photoluminescence study of InAs dots-in-a-well nanostructures

InAs quantum dots (QDs), embedded within InGaAs/GaAs/AlAs and GaAs/AlAs quantum wells (QWs), are examined by photoreflectance and photoluminescence techniques. Optical properties and electronic structure of two differently designed dots-in-a-well nanostructures is revealed focusing on the effect of strain-reducing InGaAs layer, which is discussed in detail. It is found that the use of InGaAs capping layer red-shifts the QD ground-state interband transition energy by about 100 meV maintaining strong quantization of the electronic states. The changes in InAs QD electronic properties are ascribed mainly to QD size/shape variation due to decomposition of InGaAs layer during growth process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Impact of capping layer type on emission of InAs quantum dots embedded in InGaAs/In{sub x}Al{sub y}Ga{sub z}As/GaAs quantum wells

The optical and structural properties of In{sub 0.15}Ga{sub 0.85}As/In{sub x}Al{sub y}Ga{sub z}As/GaAs quantum wells with embedded InAs quantum dots (QDs) were investigated by the photoluminescence (PL), its temperature dependence, X-ray diffraction (XRD), and high resolution (HR-XRD) methods in dependence on the composition of capping In{sub x}Al{sub y}Ga{sub z}As layers. Three types of capping layers (Al{sub 0.3}Ga{sub 0.7}As, Al{sub 0.10}Ga{sub 0.75}In{sub 0.15}As, and Al{sub 0.40}Ga{sub 0.45}In{sub 0.15}As) have been used and their impact on PL parameters has been compared. Temperature dependences of PL peak positions in QDs have been analyzed in the range of 10–500 K and to compare with the temperature shrinkage of band gap in the bulk InAs crystal. This permits to investigate the QD material composition and the efficiency of Ga(Al)/In inter diffusion in dependence on the type of In{sub x}Al{sub y}Ga{sub z}As capping layers. XRD and HR-XRD used to control the composition of quantum well layers. It is shown that QD material composition is closer to InAs in the structure with the Al{sub 0.40}Ga{sub 0.45}In{sub 0.15}As capping layer and for this structure the emission 1.3 μm is detected at 300 K. The thermal decay of the integrated PL intensity has been studied as well. It is revealed the fast 10{sup 2}-fold thermal decay of the integrated PL intensity in the structure with the Al{sub 0.10}Ga{sub 0.75}In{sub 0.15}As capping layer in comparison with 10-fold decay in other structures. Finally, the reasons of PL spectrum transformation and the mechanism of PL thermal decay for different capping layers have been analyzed and discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electronic-state-controlled reset operation in quantum dot resonant-tunneling single-photon detectors

The authors present a systematic study of an introduced reset operation on quantum dot (QD) single photon detectors operating at 77 K. The detectors are based on an AlAs/GaAs/AlAs double-barrier resonant tunneling diode with an adjacent layer of self-assembled InAs QDs. Sensitive single-photon detection in high (dI)/(dV) region with suppressed current fluctuations is achieved. The dynamic detection range is extended up to at least 10{sup 4} photons/s for sensitive imaging applications by keeping the device far from saturation by employing an appropriate reset frequency.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Photoluminescence from InGaAs/GaAs quantum well regrown on a buried patterned oxidized AlAs layer

We present a quasi-planar technological approach for forming a flexible and versatile confinement scheme based on oxidation of AlGaAs buried layers combined to an epitaxial regrowth. This method improves the electrical and optical confinements compared to the lateral oxidation since it allows to define confinement areas from a planar surface. This technique is suitable for the realization of advanced integrated photonic components arrays with close device-to-device spacing such as two-dimensional arrays of vertical-cavity surface-emitting lasers. Our results prove that the oxidation and epitaxial regrowth can be sequenced in a process flow, leading to viable confinement while preserving good radiative properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells

The excitation wavelength dependence of the anomalous circular photogalvanic effect (ACPGE) current arising from the reciprocal spin Hall effect (RSHE) in undoped InGaAs/AlGaAs quantum wells is measured under normal incidence of circularly polarized light at room temperature. We found that the spot location with the maximum ACPGE current is wavelength independent. And the normalized ACPGE current decreases at smaller wavelengths, which can be attributed to the sharp decrease of the spin relaxation time (τ{sub s}) and the hot electron relaxation time (τ{sub 1}) at smaller wavelengths. The study of the excitation wavelength dependence of ACPGE current is a good supplement to the in-depth investigation of RSHE.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells

We have investigated the growth and electron transport in In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} two dimensional electron gases (2DEG) and compared their properties with In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As 2DEGs. For 10 nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that of InGaAs/InAlAs 2DEGs. Upon thinning the wells to 3 nm, the 2DEG mobility is degraded quickly and stronger interface roughness scattering is observed for InGaAs/AlAsSb heterointerfaces than for InGaAs/InAlAs heterointerfaces. Changing the group-V exposure between As and Sb during growth interruptions at the InGaAs/AlAsSb interfaces did not significantly change the 2DEG mobility. With the insertion of a two monolayer InAlAs at the InGaAs/AlAsSb interfaces, the interface roughness scattering is reduced and the mobility greatly increased. The room temperature 2DEG mobility shows 66% improvement from 1.63 × 10{sup 3} cm{sup 2}/V·s to 2.71 × 10{sup 3} cm{sup 2}/V·s for a 3 nm InGaAs well.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Off state breakdown behavior of AlGaAs / InGaAs field plate pHEMTs

Off-state breakdown voltage, V{sub br}, is an important parameter determining the maximum power output of microwave Field Effect Transistors (FETs). In recent years, the use of field plates has been widely adopted to significantly increase V{sub br}. This important technological development has extended FET technologies into new areas requiring these higher voltages and power levels. Keeping with this goal, field plates were added to an existing AlGaAs / InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) process with the aim of determining the off-state breakdown mechanism and the dependency of V{sub br} on the field plate design. To find the mechanism responsible for breakdown, temperature dependent off-state breakdown measurements were conducted. It was found that at low current levels, the temperature dependence indicates thermionic field emission at the Schottky gate and at higher current levels, impact ionization is indicated. The combined results imply that impact ionization is ultimately the mechanism that is responsible for the breakdown in the tested transistors, but that it is preceded by thermionic field emission from the gate. To test the dependence of V{sub br} upon the field plate design, the field plate length and the etch depth through the highly-doped cap layer under the field plate were varied. Also, non-field plate devices were tested along side field plate transistors. It was found that the length of the etched region under the field plate is the dominant factor in determining the off-state breakdown of the more deeply etched devices. For less deeply etched devices, the length of the field plate is more influential. The influence of surface states between the highly doped cap layer and the passivation layer along the recess are believed to have a significant influence in the case of the more deeply etched examples. It is believed that these traps spread the electric field, thus raising the breakdown voltage. Three terminal breakdown voltages approaching 60V for the most deeply recessed devices are seen.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Electron spin relaxation time in (110) InGaAs/InAlAs quantum wells

Electron spin relaxation time τ{sub s} in InGaAs/InAlAs quantum wells (QWs) grown on (110) and (100) InP substrates was investigated by pump-probe transmission measurements. Similar τ{sub s} of 0.83–1.0 ns were measured at room temperature for all the measured (110) and (100) QWs, indicating suppression of the D'yakonov-Perel' spin relaxation mechanism in (110) QWs is not effective in InGaAs/InAlAs QWs as opposed to GaAs/AlGaAs QWs. Contribution of the Bir-Aronov-Pikus mechanism dominant in (110) GaAs/AlGaAs QWs was found to be small in both the (110) and (100) InGaAs/InAlAs QWs from the weak dependences of τ{sub s} on pump intensity at room temperature. These results suggest that the spin relaxation mechanism dominant in InGaAs/InAlAs QWs at a temperature higher than 200 K is the Elliott-Yafet mechanism independent of the crystal orientation among the above three major mechanisms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Charging dynamics of a floating gate transistor with site-controlled quantum dots

A quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs quantum dots was realized by means of molecular beam epitaxy and etching techniques. By sampling of different gate voltage sweeps for the determination of charging and discharging thresholds, it was found that discharging takes place at short time scales of μs, whereas several seconds of waiting times within a distinct negative gate voltage range were needed to charge the quantum dots. Such quantum dot structures have thus the potential to implement logic functions comprising charge and time dependent ingredients such as counting of signals or learning rules.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Investigation of interfaces in AlSb/InAs/Ga₀.₇₁In₀.₂₉Sb quantum wells by photoluminescence

We have investigated excitation power and temperature dependent PL spectra to systematically study the influences of the interfaces in the both InAs/Ga₀.₇₁In₀.₂₉Sb and InAs/AlSb on the optical properties of AlSb/Ga₀.₇₁In₀.₂₉Sb/InAs quantum wells (QWs). The localized states as well as the activation energy were analyzed to discuss the possible thermal quenching and non-radiative recombination mechanisms. We found two non-radiative recombination processes were involved in the thermal quenching of radiative emission for the QW structures. The GaAs-like interface in InAs/Ga₀.₇₁In₀.₂₉Sb with higher activation energy (62.7 meV) in high temperature region (70 K–300 K) supplies a deeper hole confinement and less roughness than the InSb-like one, which suppress non-radiative recombination process and promote the optical qualities of the quantum wells. The peak energy of the InSb-like sample exhibited “step-curve” behavior with increase temperature. Neither InSb-like nor AlAs-like interface in InAs/AlSb favored the radiative emission efficiency.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well

The spin polarization under low electric fields (≤300 V/cm) at low temperatures has been studied in undoped InGaAs/AlGaAs multiple quantum well. The spin polarization was created by optical spin orientation using circularly polarized light and the inverse spin-Hall effect was employed to measure the spin polarization current. We observed an obvious spin depolarization especially at lower temperatures (80–120 K). We ascribed the spin depolarization of the photoinduced electrons to the heating effect from the low electric fields (the low field regime 50–300 V/cm). This spin depolarization due to the heating effect is sensitive to temperature and electric field, suggesting a wide range of potential applications and devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells

The investigation of intrinsic interactions in polariton condensates is currently limited by the photonic disorder of semiconductor microcavity structures. Here, we use a strain compensated planar GaAs/AlAs{sub 0.98}P{sub 0.02} microcavity with embedded InGaAs quantum wells having a reduced cross-hatch disorder to overcome this issue. Using real and reciprocal space spectroscopic imaging under non-resonant optical excitation, we observe polariton condensation and a second threshold marking the onset of photon lasing, i.e., the transition from the strong to the weak-coupling regime. Condensation in a structure with suppressed photonic disorder is a necessary step towards the implementation of periodic lattices of interacting condensates, providing a platform for on chip quantum simulations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures

An approach for understanding the origin of cross-hatch pattern (CHP) on the surface of lattice mismatched GaMnAs/InGaAs samples grown on GaAs (001) substrates is developed. It is argued that the motion of threading dislocations in the (111) slip planes during the relaxation of InGaAs buffer layer is more complicated process and its features are similar to the ones of dislocation half-loops gliding in plastically deformed crystals. The heterostructures were characterized by atomic force microscopy and electron beam induced current (EBIC). Detailed EBIC experiments revealed contrast features, which cannot be accounted for by the electrical activity of misfit dislocations at the buffer/substrate interface. We attribute these features to specific extended defects (EDs) generated by moving threading dislocations in the partially relaxed InGaAs layers. We believe that the core topology, surface reconstruction, and elastic strains from these EDs accommodated in slip planes play an important role in the CHP formation. The study of such electrically active EDs will allow further understanding of degradation and changes in characteristics of quantum devices based on strained heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗