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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Understanding the Solution Dynamics and Binding of a PVDF Binder with Silicon, Graphite, and NMC Materials and the Influence on Cycling Performance

The impact of the binding, solution structure, and solution dynamics of poly(vinylidene fluoride) (PVDF) with silicon on its performance as compared to traditional graphite and Li 1.05 Ni 0.33 Mn 0.33 Co 0.33 O 2 (NMC) electrode materials was explored. Through refractive index (RI) measurements, the concentration of the binder adsorbed on the surface of electrode materials during electrode processing was determined to be less than half of the potentially available material resulting in excessive free binder in solution. Using ultrasmall-angle neutron scattering (USANS) and small-angle neutron scattering (SANS), it was found that PVDF forms a conformal coating over the entirety of the silicon particle. This is in direct contrast to graphite–PVDF and NMC–PVDF slurries, where PVDF only covers part of the graphite surface, and the PVDF chains make a network-like graphite–PVDF structure. Conversely, a thick layer of PVDF covers NMC particles, but the coating is porous, allowing for ion and electronic transport. The homogeneous coating of silicon breaks up percolation pathways, resulting in poor cycling performance of silicon materials as widely reported. These results indicate that the Si–PVDF interactions could be modified from a binder to a dispersant.

25 ENERGY STORAGE↗
NASA NTRS1977

Energy requirement for the production of silicon solar arrays

An assessment of potential changes and alternative technologies which could impact the photovoltaic manufacturing process is presented. Topics discussed include: a multiple wire saw, ribbon growth techniques, silicon casting, and a computer model for a large-scale solar power plant. Emphasis is placed on reducing the energy demands of the manufacturing process.

Lindmayer, J.↗
NASA NTRS1992

Perspectives on integrated modeling of transport processes in semiconductor crystal growth

The wide range of length and time scales involved in industrial scale solidification processes is demonstrated here by considering the Czochralski process for the growth of large diameter silicon crystals that become the substrate material for modern microelectronic devices. The scales range in time from microseconds to thousands of seconds and in space from microns to meters. The physics and chemistry needed to model processes on these different length scales are reviewed.

Brown, Robert A.↗
DOE OSTI2020

Photonic integration for UV to IR applications

Photonic integration opens the potential to reduce size, power, and cost of applications normally relegated to table- and rack-sized systems. Today, a wide range of precision, high-end, ultra-sensitive, communication and computation, and measurement and scientific applications, including atomic clocks, quantum communications, processing, and high resolution spectroscopy, are ready to make the leap from the lab to the chip. However, many of these applications operate at wavelengths not accessible to the silicon on insulator-based silicon photonics integration platform due to absorption, power handling, unwanted nonlinearities, and other factors. Next generation photonic integration will require ultra-wideband photonic circuit platforms that scale from the ultraviolet to the infrared and that offer a rich set of linear and nonlinear circuit functions as well as low loss and high power handling capabilities. This article provides an assessment of the field in ultra-wideband photonic waveguides to bring power efficient, ultra-high performance systems to the chip-scale and enable compact transformative precision measurement, signal processing, computation, and communication techniques.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism

The interaction of heavily doped p- and n-type Si crystals with hydrofluoric acid in the dark with and without contact with metals having greatly differing work functions (Ag and Pd) is studied. The dependences of the dissolution rates of Si crystals in HF solutions that contain oxidizing agents with different redox potentials (FeCl{sub 3}, V{sub 2}O{sub 5} and CrO{sub 3}) on the type and level of silicon doping are determined. Analysis of the experimental data suggests that valence-band holes in silicon are not directly involved in the anodic reactions of silicon oxidation and dissolution and their generation in crystals does not limit the rate of these processes. It is also shown that the character and rate of the chemical process leading to silicon dissolution in HF-containing electrolytes are determined by the interfacial potential attained at the semiconductor–electrolyte interface. The mechanism of electrochemical pore formation in silicon crystals is discussed in terms of selfconsistent cooperative reactions of nucleophilic substitution between chemisorbed fluorine anions and coordination- saturated silicon atoms in the crystal subsurface layer. A specific feature of these reactions for silicon crystals is that vacant nonbonding d{sup 2}sp{sup 3} orbitals of Si atoms, associated with sixfold degenerate states corresponding to the Δ valley of the conduction band, are involved in the formation of intermediate complexes. According to the suggested model, the pore-formation process spontaneously develops in local regions of the interface under the action of the interfacial potential in the adsorption layer and occurs as a result of the detachment of (SiF{sub 2}){sub n} polymer chains from the crystal. Just this process leads to the preferential propagation of pores along the <100> crystallographic directions. The thermodynamic aspects of pore nucleation and the effect of the potential drop across the interface, conduction type, and free-carrier concentration in the crystal on the pore size and structure are discussed. The concepts developed in the study can consistently account for experimental facts characterizing the etching of silicon crystals with various electrical parameters under various conditions providing the anodic polarization of crystals in HF-containing solutions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1988

Forming Solar-Cell Junctions By Flash Diffusion

Modified fabrication process simultaneously forms front and back junctions of silicon photovoltaic cells. With flash diffusion, junctions formed in 10 to 20 seconds. Cost reductions of 25 to 30 percent expected with modified process. Devices produced have performance equal to or better than cells made by conventional diffusion.

Alexander, Paul, Jr.↗
NASA NTRS1984

Correlations between plasma variables and the deposition process of Si films from chlorosilanes in low pressure RF plasma of argon and hydrogen

The dissociation of chlorosilanes to silicon and its deposition on a solid substrate in a RF plasma of mixtures of argon and hydrogen were investigated as a function of the macrovariables of the plasma. The dissociation mechanism of chlorosilanes and HCl as well as the formation of Si in the plasma state were studied by sampling the plasma with a quadrupole mass spectrometer. Macrovariables such as pressure, net RF power input and locations in the plasma reactor strongly influence the kinetics of dissociation. The deposition process of microcrystalline silicon films and its chlorine contamination were correlated to the dissociation mechanism of chlorosilanes and HCl.

Avni, R.↗
DOE OSTI2016

Hollow Silicon Nanospheres Encapsulated with a Thin Carbon Shell: An Electrochemical Study

In this study we have investigated the electrochemical properties of hollow silicon nanospheres encapsulated with a thin carbon shell, HSi@C, as a potential candidate for lithium-ion battery anodes. Hollow Si nanospheres are formed using a templating method which is followed by carbon coating via carbonization of a pyrrole precursor to form HSi@C. The synthesis conditions and the resulting structure of HSi@C have been studied in detail to obtain the target design of hollow Si nanospheres encapsulated with a carbon shell. The HSi@C obtained exhibits much better electrochemical cycle stability than both micro-and nano-size silicon anodes and deliver a stable specific capacity of 700 mA h g(-1) after 100 cycles at a current density of 2 A g(-1) and 800 mA h g(-1) after 120 cycles at a current density of 1 A g(-1). The superior performance of HSi@C is attributed to the synergistic combination of the nanostructured material, the enhanced conductivity, and the presence of the central void space for Si expansion with little or no change in the volume of the entire HSi@C particle. This study is the first detailed investigation of the synthesis conditions to attain the desired structure of a hollow Si core with a conductive carbon shell. This study also offers guidelines to further enhance the specific capacity of HSi@C anodes in the future. (C) 2016 Elsevier Ltd. All rights reserved.

Anode↗
DOE OSTI2018

New Slag for Nickel Matte Smelting Process and Subsequent Fe Extraction

Large quantities of residual slag with high Fe content are left behind in pyrometallurgical nickel processing. How to separate and recover iron from the high fayalite residue is still a problem because iron mainly exists as iron-magnesium silicate in slag. This article suggests that the slag for nickel smelting is adjusted by increasing the amount of lime, partly instead of quartz, to form liable reduction compounds for subsequent Fe extraction. Based on the thermodynamic analysis and phase diagram of the FeO-SiO{sub 2}-CaO-MgO slag system, the new slag composition was chosen, the suitable melting point of relevant slags was measured, and the phase change was observed. The new slag with a composition of 7 to 9 pct MgO, 10 to 15 pct CaO and 1.5 to 1.8 Fe/SiO{sub 2} was found to work well for nickel matte smelting. With the increase of CaO and decrease of SiO{sub 2} content in slag, Ca(Fe, Mg)Si{sub 2}O{sub 6} and Mg(Ca)Fe{sub 2}O{sub 4} are the main existing phases instead of (Fe, Mg){sub 2}SiO{sub 4} in the residual smelting slag. More than 50 pct of Fe-containing phases are in the form of MgFe{sub 2}O{sub 4} when 15 pct CaO is added, which is what we want because the MgFe{sub 2}O{sub 4} is much better for magnetic separation and reduction than the original (Fe, Mg){sub 2}SiO{sub 4}. In this way, Fe can be much more easily extracted from residual slag and have multipurpose benefits.

36 MATERIALS SCIENCE↗
DOE OSTI2017

High efficiency screen-printed n-type silicon solar cell using co-diffusion of APCVD boron emitter and POCl 3 back surface field

We present the fabrication and analysis of Passivated Emitter and Rear Totally Diffused (PERT) solar cells on n-type silicon using a co-diffusion process. In a single high temperature step, a BSG/SiO x stack deposited by APCVD and a POCl 3 back surface field diffuse into the wafer to form the boron doped emitter and phosphorus doped back surface field. The SiO x layer on top of BSG acts as a masking layer to prevent cross-doping of phosphorus as well as a blocking layer for boron out-diffusion. This resulted in an initial sheet resistance of 76 Ω with good uniformity and a final p + emitter sheet resistance of 97 Ω after boron rich layer removal. Additionally, bulk lifetime was investigated before and after the high temperature step that resulted in an increase from 1.2 ms to 1.5 ms due to a POCl 3 gettering effect. Finally, a peak cell efficiency of 20.3% was achieved and each recombination component in terms of saturation current density was calculated and analyzed to understand the cell for further efficiency enhancement.

14 SOLAR ENERGY↗
DOE OSTI2021

Competitive adsorption within electrode slurries and impact on cell fabrication and performance

We ask why do battery researchers use 10-20 wt% binder in research cells when commercial chemistries use much less? This report seeks to explore this question by understanding the ordering and structure of polyimide binder with a silicon/pitch-carbon black electrode system. Correlating the effect of binder concentration on electrode architecture and electrochemical properties is vital to enhancing silicon anode cycle and calendar life. Using ultra-small angle neutron scattering (USANS) and binder adsorption isotherms an optimal region of polyimide (PI) binder coverage was found. Further, there is a preferential adsorption of PI to carbon black that has to be completed before PI binds to the silicon. Optimizing the concentration of binder leads to a 50% increase in capacity due to the optimization of binder-silicon-carbon interactions.

25 ENERGY STORAGE↗
DOE OSTI2024

Comparative Study on the Photoelectrochemical Hydrogen Production from the Layout Optimization in a Unit Cell

Solar-driven water splitting is achieved by connecting photovoltaics with electrolysis. Recently, integrated approaches of the two configurations for photoelectrochemical reactions have shown great potential in a combined unit, but strategies to address further material and cell development face significant scientific challenges. Here, in this work, we present an experimental demonstration of photoelectrochemical (PEC) unit-cells with efficient separate dual compartments for oxygen evolution and hydrogen evolution reactions. The design and fabrication of cell architectures with various degrees of integration are investigated efficient and sustainable PEC processes. The effect of the nanostructured silicon (Si) photoelectrodes, including the adoption of layer architectures, surface protection layer deposition, and membrane electrode assembly is further studied to optimize the design parameters of the PEC unit-cells. This developed PEC cell with the Si photocathode achieved a photocurrent density of -4.8 mA cm –2 at -2.0 V cell and -2.87 mA cm –2 at -1.6 V cell . It clearly provides a critical milestone for unbiased solar water splitting. Practical solar to hydrogen (STH) can be directly estimated in investigating PEC performance in this unit-cell as assembled with a solar cell. It is a significantly meaningful step forward in practical solar fuel production.

08 HYDROGEN↗
DOE OSTI2021

Engineering the Si Anode Interface via Particle Surface Modification: Embedded Organic Carbonates Lead to Enhanced Performance

Si nanoparticles (SiNPs) are recognized as a promising anode material for next-generation high-energy lithium-ion batteries. However, due to the more stringent requirements resulting from severe volume change, the solid-electrolyte interphase (SEI) on SiNPs plays a critical role in determining their cycling performance. Engineering the interface for higher stability has become an effective yet challenging approach to accommodate the deterioration of the silicon anode from the repeated lithiation/delithiation process. Herein, we report a novel approach of engineering a covalently bonded organic monolayer of ethylene carbonates onto the surface of the SiNPs that can help form a sturdy SEI. Finally, this molecule-level surface modification provides an effective approach to enable high-energy lithium-ion batteries with Si anodes.

25 ENERGY STORAGE↗
DOE OSTI2025

Piezoelectrically actuated silicon-nitride-based high-speed spatial light modulator

Advancements in light modulator technology have been driving discoveries and progress across various fields. The problem of large-scale coherent optical control of atomic quantum systems—including cold atoms, ions, and solid-state color centers—presents among the most stringent requirements. This motivates a new generation of high-speed large-scale modulator technology operating in the visible to near-infrared wavelength range. We introduce a scalable modulator technology based on piezoelectrically actuated silicon nitride resonant waveguide gratings fabricated on 200 mm diameter silicon wafers with CMOS-compatible processes. We present a proof-of-concept device with 4 × 4 individually addressable 50 μ m × 50 μ m pixels or channels, each containing a resonant waveguide grating with a ~ 780 nm design wavelength, supporting > 100 MHz modulation speeds, and a spectral response with > 20 dB extinction.

integrated optics↗
DOE OSTI2016

Detection of short range order in SiO{sub 2} thin-films by grazing-incidence wide and small-angle X-ray scattering

The effects of the fabrication process conditions on the microstructure of silicon dioxide thin films of <10 nm thickness are presented. The microstructure was investigated using grazing-incidence wide and small-angle X-ray scattering methods with synchrotron radiation. The combination of a high brilliance light source and grazing incident configuration enabled the observation of very weak diffuse X-ray scattering from SiO{sub 2} thin films. The results revealed different microstructures, which were dependent on oxidizing species or temperature. The micro-level properties differed from bulk properties reported in the previous literature. It was indicated that these differences originate from inner stress. The detailed structure in an amorphous thin film was not revealed owing to detection difficulties.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Large tuning of narrow-beam terahertz plasmonic lasers operating at 78 K

A new tuning mechanism is demonstrated for single-mode metal-clad plasmonic lasers, in which the refractive-index of the laser’s surrounding medium affects the resonant-cavity mode in the same vein as the refractive-index of gain medium inside the cavity. Reversible, continuous, and mode-hop-free tuning of ~57 GHz is realized for single-mode narrow-beam terahertz plasmonic quantum-cascade lasers (QCLs), which is demonstrated at a much more practical temperature of 78 K. The tuning is based on post-process deposition/etching of a dielectric (silicon-dioxide) on a QCL chip that has already been soldered and wire-bonded onto a copper mount. This is a considerably larger tuning range compared to previously reported results for terahertz QCLs with directional far-field radiation patterns. The key enabling mechanism for tuning is a recently developed antenna-feedback scheme for plasmonic lasers, which leads to the generation of hybrid surface-plasmon-polaritons propagating outside the cavity of the laser with a large spatial extent. The effect of dielectric deposition on QCL’s characteristics is investigated in detail including that on maximum operating temperature, peak output power, and far-field radiation patterns. Single-lobed beam with low divergence (<7°) is maintained through the tuning range. The antenna-feedback scheme is ideally suited for modulation of plasmonic lasers and their sensing applications due to the sensitive dependence of spectral and radiative properties of the laser on its surrounding medium.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗