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Results for “oxide interface”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Three-dimensional character of the Fermi surface in ultrathin LaTiO 3 /SrTiO 3 heterostructures

LaTiO 3 films on SrTiO 3 single crystal substrates exhibit metallic behavior attributed to the LaTiO 3 film, the interface as well as part of the SrTiO 3 . In the limit of ultrathin LaTiO 3 films on SrTiO 3 , the contribution to the metallicity from strain-induced electronic structure modification of the LaTiO 3 film is minimized so that the dominant contribution to metallicity is from the interface and part of the SrTiO 3 due to charge transfer of 3d electrons from LaTiO 3 to SrTiO 3 . In such a limit, we observe quantum oscillations whose angular dependence indicates a three-dimensional Fermi surface. Finally, such angular dependence is observed in two sets of quantum oscillations—one low frequency and one high frequency—that we have attributed to an inner and outer Fermi surface associated with a Rashba-like spin split hybridized d xz+yz band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Accurate band alignment at the amorphous Al 2 O 3 /p-Ge(100) interface determined by hard x-ray photoelectron spectroscopy and density functional theory

Here, we have investigated the band alignment at the interface of amorphous aluminum oxide (am-Al 2 O 3 ) grown by atomic layer deposition on p-Ge(100) and the effects of postgrowth annealing using hard x-ray photoelectron spectroscopy and density function theory (DFT). Accurate determination of the valence-band offsets was obtained by comparing the experimentally measured valence bands with DFT-calculated densities of states. The am-Al 2 O 3 density of states calculated from a weighted ensemble of crystalline Al 2 O 3 structures gives excellent agreement with experiment, sufficiently capturing the nonlinear shape of the valence-band edge. We report a valence-band offset of 2.60 ± 0.1 eV for am-Al 2 O 3 /p-Ge, which is reduced by 0.20 eV upon annealing as interfacial GeOx is formed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2015

Compact modeling of total ionizing dose and aging effects in MOS technologies

This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Comparative Study of the Lateral Photovoltaic Effect in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si Structures

The results of a comparative study of the lateral photovoltaic effect in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si structures are presented. The lateral photovoltage reaches its maximum near the measurement contacts in both structures, but the signs of this voltage differ. As the light spot moves away from the contacts, the photovoltage varies linearly in Fe{sub 3}O{sub 4}/SiO{sub 2}/n-Si and decreases exponentially in Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si. It is found that interface states at the SiO{sub 2}/Si interface induce the photovoltage polarity inversion associated with a change in the conductivity type of silicon. An extreme thickness dependence of the photovoltage with an optimum Fe{sub 3}O{sub 4} film thickness of ~50 nm is observed in both structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1973

Critical role of nitrogen during high temperature scaling of zirconium

The mechanisms of scale cracking, scale color changes, and scale growth, and their interrelations, were studied in zirconium specimens at elevated temperatures in air, oxygen and nitrogen. Nitrogen was found to be responsible for monoclinic-to-cubic ZrO2 conversion, for scale cracking and breakaway on zirconium nitride, and for the formation of ZrN on the metal interface underneath an outer oxide layer.

Evans, E. B.↗
NASA NTRS1974

Space-related composite-material experiments

The preparation of composites in space depends on the immersion of reinforcements in a liquid-metal matrix and their uniform, stable dispersion in the bulk products until solidification occurs. The chief problem in achieving the composite is associated with the 'wetting' of the reinforcements. A study of the theory of wetting revealed that wetting is prevented by the presence of gaseous and oxide contaminants at the interface between the pure liquid and pure solid. Experiment then confirmed that the use of a vacuum environment, cleaning of all surfaces, elevated temperature, ion bombardment, and vigorous mechanical agitation enabled the immersion and dispersion of candidate reinforcements. The technique is limited by the increased tendency for reaction if the time at elevated temperature is extended.

Kaye, S.↗
NASA NTRS1998

Temperature Dependence of Diffusion and Reaction at a Pd/SiC Contact

Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, emphasis has been put on the understanding of changes of physical and chemical properties of the Schottky diodes with variation of temperature. Schottky diodes were made by depositing ultra-thin palladium films onto silicon carbide substrates. The electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of RT-400 C. However, both palladium diffused into SiC and silicon migrated into palladium thin film as well as onto surface were observed at room temperature. The formation of palladium compounds at the Pd/SiC interface was also observed. Both diffusion and reaction at the Pd/SiC interface became significant at 300 C and higher temperature. In addition, silicon oxide was found also at the interface of the Pd/SiC contact at high temperature. In this report, the mechanism of diffusion and reaction at the Pd/SiC interface will be discussed along with experimental approaches.

Shi, D.T.↗
NASA NTRS2013

Charge Yield at Low Electric Fields: Considerations for Bipolar Integrated Circuits

A significant reduction in total dose damage is observed when bipolar integrated circuits are irradiated at low temperature. This can be partially explained by the Onsager theory of recombination, which predicts a strong temperature dependence for charge yield under low-field conditions. Reduced damage occurs for biased as well as unbiased devices because the weak fringing field in thick bipolar oxides only affects charge yield near the Si/SiO2 interface, a relatively small fraction of the total oxide thickness. Lowering the temperature of bipolar ICs - either continuously, or for time periods when they are exposed to high radiation levels - provides an additional degree of freedom to improve total dose performance of bipolar circuits, particularly in space applications.

ionizing radiation↗
NASA NTRS2016

Characterization of SiCSiC Composites in Support of Environmental Degradation Modeling

SiCSiC (silicon carbide fiber reinforced silicon carbide) composites are candidate materials for various turbine engine applications because of their high specific strength and good creep and oxidation resistance at elevated temperatures. This study was performed to characterize the microstructure of a melt infiltrated (MI) SiCSiC, and to examine environmental degradation mechanisms occurring in precracked MI SiCSiC CMC specimens under tensile stresses of 30 ksi or less at 815C in dry air or argon. In addition, the oxidation of the BN interface was characterized at815C, and crack opening displacement as a function of stress measurements were made. This material characterization is being performed to obtain data to support NASA GRC modeling of SiCSiC environmental degradation. The comparison of experimentally-observed phenomena with model predictions can lead to improved understanding of material degradation mechanisms.

SiC/SiC composites↗
DOE OSTI2019

Metal fluoride passivation coatings prepared by atomic layer deposition for Li-ion batteries

The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlW.sub.xF.sub.y) improves the electrochemical stability of LiCoO.sub.2. AlW.sub.xF.sub.y thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlW.sub.xF.sub.y coatings (<10 .ANG.) on LiCoO.sub.2 significantly enhance stability relative to bare LiCoO.sub.2 when cycled to 4.4 V. The coated LiCoO2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlW.sub.xF.sub.y coated materials. These results open new possibilities for designing ultrathin and electrochemically robust coatings of metal fluorides via ALD to enhance the stability of Li-ion electrodes.

Mane, Anil U.↗
DOE OSTI2021

Metal fluoride passivation coatings prepared by atomic layer deposition for Li-ion batteries

The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlWxFy) improves the electrochemical stability of LiCoO2. AlWxFy thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlWxFy coatings (<10 Å) on LiCoO2 significantly enhance stability relative to bare LiCoO2 when cycled to 4.4 V. The coated LiCoO2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlWxFy coated materials. These results open new possibilities for designing ultrathin and electrochemically robust coatings of metal fluorides via ALD to enhance the stability of Li-ion electrodes.

Mane, Anil U.↗
DOE OSTI2024

Metal fluoride passivation coatings prepared by atomic layer deposition for Li-ion batteries

The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlWxFy) improves the electrochemical stability of LiCoO 2 . AlWxFy thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlWxFy coatings (<10 Å) on LiCoO 2 significantly enhance stability relative to bare LiCoO 2 when cycled to 4.4 V. The coated LiCoO 2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlWxFy coated materials. These results open new possibilities for designing ultrathin and electrochemically robust coatings of metal fluorides via ALD to enhance the stability of Li-ion electrodes.

Mane, Anil U.↗
DOE OSTI2022

Engineering surface segregation of perovskite oxide through wet exsolution for CO catalytic oxidation

Cation segregation occurring near the surface or interfaces of solid catalysts plays an important role in catalytic reactions. Unfortunately, the native surface of perovskite oxides is dominated by passivated A-site segregation, which severely hampers the catalytic activity and durability of the system. To address this issue, we present a wet exsolution method to reconstruct surface segregation in perovskite cobalt oxide. Here, under reduction etching treatment of glycol solution, inert surface Sr segregation was transformed into active Co 3 O 4 segregation. By varying the reaction time, we achieved differing coverage of the active Co 3 O 4 segregation on the La 0.5 Sr 0.5 CoO 3-δ (LSCO) perovskite oxide surface. This study reveals that CO oxidation activity exhibits a volcano-shaped dependence on the coverage of Co 3 O 4 segregation at the surface of a perovskite cobalt oxide. Furthermore, we find that a suitable coverage of Co 3 O 4 segregation can dramatically improve the catalytic activity of the perovskite catalyst by enhancing interface interactions. Co K-edge, Co L-edge, and O K-edge X-ray absorption spectra confirm that the synergistic effect optimizes the covalence of the metal-oxygen bond at the surface and interface. This work not only contributes to the design of perovskite-type catalysts, but also provides important insight into the relationship between surface segregation and catalytic activity.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Better Catalysts through Microscopy: Mesoscale M1/M2 Intergrowth in Molybdenum–Vanadium Based Complex Oxide Catalysts for Propane Ammoxidation

Catalysis research has transformed from the predominantly empirical field to one where it is possible to control the catalytic properties via characterization and modification of the atomic-scale active centers. Many phenomena in catalysis, such as synergistic effect, however, transcend the atomic scale and also require the knowledge and control of the mesoscale structure of the specimen to harness. Our paper, we use our discovery of atomic-scale epitaxial interfaces in molybdenum vanadium based complex oxide catalysts systems (i.e., MoVMO, M = Ta, Te, Sb, Nb, etc.) to achieve control of the mesoscale structure of this complex mixture of very different active phases. We can now achieve true epitaxial intergrowth between the catalytically critical M1 and M2 phases in the system that are hypothesized to have synergistic interactions, and demonstrate that the resulting catalyst has improved selectivity in the initial studies. Finally, we highlight the crucial role atomic scale characterization and mesoscale structure control play in uncovering the complex underpinnings of the synergistic effect in catalysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Magnetization dynamics and interface studies in ion-beam sputtered Si/CoFeB(8)/MgO(4)/CoFeB(8)/Ta(5) structures

The interface roughness, Boron distribution in bulk CoFeB and at interface, Gilbert damping constant (α), and inhomogeneous broadening in ion-beam sputtered Si/CoFeB(8)/MgO(4)/CoFeB(8)/Ta(5) structures are found to be sensitive to the MgO growth process. The ion-assist and reactive growth processes that result in sharper interfaces of width ∼0.5 nm lead to smaller α of 0.0050 ± 0.0003 and 0.0060 ± 0.0002 and inhomogeneous broadening ΔH{sub 0} of 3 ± 0.3 and 1 ± 0.3 Oe, respectively. On the other hand, the post-oxidation method results in rough interface and higher retention of Boron in CoFeB leading to higher values for α and ΔH{sub 0} as 0.0080 ± 0.0006 and 5 ± 0.3 Oe, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗