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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Observation of nuclear quadrupole hyperfine structure in the infrared spectrum of hydrogen iodide using a tunable-diode laser

Nuclear quadrupole hyperfine structure has been observed in the 1-0 vibration-rotation band of hydrogen iodide with a tunable-diode laser. The measured splittings agree well with microwave measurements of the HI molecule. Evidence for a slight change in the iodine nuclear quadrupole coupling constant from the ground to first excited vibrational state in hydrogen iodide was found.

Strow, L. L.↗
NASA NTRS1980

Post-breakdown bulk oscillations in gold-doped silicon p/+/-i-n/+/ double-injection diodes

Experimental results on postbreakdown bulk oscillations in n-type gold-doped phosphorus-compensated p(+)-i-n(+) double-injection diodes is presented. It is suggested that changes observed in the postbreakdown oscillation frequency and amplitude are due to changes in the prebreakdown characteristics. An empirical relationship for the frequency of oscillation is derived. It is concluded that the postbreakdown oscillations are drift-related, although their exact mechanism is not known.

Mantha, B.↗
NASA NTRS1981

Vibration characteristics of a laser heterodyne spectrometer tunable diode laser system using a mechanical cooler platform

The Langley Research Center redesigned the cooler test bed hardware for the refrigerator for the purpose of isolating the tunable diode laser (TDL) from the cold tip in a laser heterodyne spectrometer system. Deflection in the lateral and vertical directions were managed on the cold tip and on the TDL. Measurements were analyzed over the frequency range of 0.100 Hz. The results show that the TDL responds approximately one order of magnitude less than that of the cold tip. The redesign of the system provided for adequately isolating the TDL for future operation.

Catherines, J. J.↗
NASA NTRS1981

Development and fabrication of a fast recovery, high voltage power diode

The use of positive bevels for P-I-N mesa structures to achieve high voltages is described. The technique of glass passivation for mesa structures is described. The utilization of high energy radiation to control the lifetime of carriers in silicon is reported as a means to achieve fast recovery times. Characterization data is reported and is in agreement with design concepts developed for power diodes.

Berman, A. H.↗
NASA NTRS1980

Low-threshold high-T/0/ constricted double heterojunction AlGaAs diode lasers

Constricted double heterojunction diode lasers of relatively low CW thresholds (28-40 mA) are obtained by growing structures that maximize the amount of current flow into the lasing spot. These values are obtained while still using standard 10 microns wide oxide-defined stripe contacts. Over the 20-70 C temperature interval, threshold current temperature coefficients as high as 320 C and a virtually constant external differential quantum efficiency, are found.

Botez, D.↗
NASA NTRS1981

Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

Neugroschel, A.↗
NASA NTRS1981

High-temperature CW and pulsed operation in constricted double-heterojunction AlGaAs diode lasers

The behavior of constricted double-heterojunction (CDH) diode lasers has been investigated up to 170 C CW and 270 C pulsed. It is found that the temperature-dependent current concentration effect responsible for low threshold-current sensitivity and temperature-invariant external differential quantum efficiency in CDH lasers saturates at about 100 C. It is also found that over a wide temperature interval (180-280 C) the threshold current density has a To value of 40-50 C and that the spontaneous emission becomes increasingly sublinear above 220 C. Both effects are believed to reflect Auger recombination.

Botez, D.↗
NASA NTRS1977

Reliability study of opto-coupled semiconductor devices and Light Emitting Diodes (LED)

Opto-coupler and light emitting diode (LED) failure mechanisms and associated activation energies were determind from the results of environmental and accelerated lift tests of over 2,400 devices. The evaluation program included LED phototransistor opto-couplers from three sources, LED photoamplifier opto-couplers from a single source, and discrete infrared emitting LEDs from two sources. Environmental tests to evaluate device mechanical integrity included power cycling (10,000 cycles), temperature cycling (500 cycles) and a sequence of monitored shock, monitored vibration and constant acceleration. Multiple temperature operating life tests were conducted at ambient temperatures between 25 C and 200 C. Opto-couplers were operated in both the 'on' and 'off' states during life testing.

Maurer, R. C.↗
NASA NTRS1981

Gunn diodes and devices (bibliography for 1978-1980)

A listing of about 500 works from Soviet and foreign scientific literature on Gunn diodes and devices based on them is presented. The bibliography includes publications in which various questions pertinent to all (or several) types of semiconductor instruments in the superhigh frequency range are mentioned. A subject index is included.

Yelenskiy, Y. G.↗
NASA NTRS1981

Constricted double-heterojunction AlGaAs diode lasers - Structures and electrooptical characteristics

Constricted double-heterojunction (CDH) diode lasers are presented as a class of nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various CDH structures are discussed while treating such topics as liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers with positive-index lateral mode confinement provides single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C, while exhibiting light-current characteristics with second-harmonic distortions as low as -57 dB below the fundamental level. Semileaky guide CDH lasers with an asymmetric leaky cavity provide single-mode operation to 15-20 mW/facet CW, and to 50 mW/facet at 50% duty cycle.

Botez, D.↗
NASA NTRS1982

Improved whisker pointing technique for micron-size diode contact

Pointed phosphor-bronze whiskers are commonly used to contact micron-size Schottky barrier diodes. A process is presented which allows pointing such wire and achieving the desired cone angle and tip diameter without the use of highly undesirable chemical reagents.

Mattauch, R. J.↗
NASA NTRS1982

Noise equivalent circuit of a semiconductor laser diode

A small-signal model of a semiconductor laser is extended to include the effects of intrinsic noise by adding current and voltage noise sources. The current noise source represents the shot noise of carrier recombination, while the voltage noise source represents the random process of simulated emission. The usefulness of the noise equivalent circuit is demonstrated by calculating the modulation and noise characteristics of a current-driven diode as a function of bias current and frequency.

Harder, C.↗
NASA NTRS1982

Measurements of pressure-broadening coefficients of NO and O3 using a computerized tunable diode laser spectrometer

Foreign-gas broadening coefficients have been measured for selected lines of ozone in the 9.2 micron region and for several R-branch lines of nitric oxide in the 5.4 micron region using a computerized tunable diode laser spectrometer. The data analysis showed the importance of fitting a Lorentzian line shape out to several times the halfwidth to obtain a correct value of the broadening coefficient. The measured broadening coefficients of nitric oxide were in good agreement with those obtained by Abels and Shaw (1966). The results of the analysis of eleven lines in the v-1 band and five lines in the v-3 band of ozone show a transition-dependent broadening coefficient. The average value of the foreign-gas broadening ceofficients for the measured v-1 and v-3 lines are 0.075 and 0.073 per cm per atm, respectively.

Lundqvist, S.↗
NASA NTRS1982

Measurement of the dispersive and refractive indices of germanium using diode lasers

Germanium Fabry-Perot etalons are commonly used in diode laser spectroscopy to establish relative frequency calibration scales for molecular absorption spectra. Typically the channel spectrum of the etalon is recorded simultaneously with the molecular spectrum as the laser injection current is tuned linearly, and the etalon free spectral range (fringe spacing) is used to measure the frequency separations among lines in the molecular spectrum. For this purpose, the etalon free spectral range must be known for the measurement wavelength, and this in turn relies on knowledge of the etalon length and the dispersive index at this wavelength. It is pointed out that the most satisfactory approach is to measure directly the free spectral range or dispersive index of the etalon at the wavelength of interest. A description is presented of measurements of this type, performed near 7.9 and 10.1 micrometers for a 7.7-cm long germanium etalon.

Jennings, D. E.↗
NASA NTRS1984

Laser Diode Schlieren Photography

Laser diodes preferable to conventional lasers or incandescent lamps for Schlieren flow analysis because they are smaller, more rugged, less costly and have lower power requirements.

Franke, J. M.↗
NASA NTRS1982

Linewidth measurements of tunable diode lasers using heterodyne and etalon techniques

Measurements of the linewidths of Pb-salt diode lasers operating in the 8- and 9-micron region are reported. The linewidths of the 9-micron lasers were determined by conventional heterodyne techniques, while for the 8-micron lasers a new technique based on a Fabry-Perot etalon was used. The new technique avoids the complexity and limited wavelength range of the heterodyne measurements and can be used for any tunable laser. The linewidths observed varied from 0.6 to more than 500-MHz FWHM. The linewidth was found to vary dramatically from device to device, to depend strongly on junction temperature and injection current, and to be correlated with vibrations caused by operation of a closed-cycle refrigerator.

Reid, J.↗
NASA NTRS1982

A proposed new method for damping relaxation oscillations in laser diodes

A new concept of damping relaxation oscillations in injection laser diodes is described. This method involves the operation of the laser as a part of a bipolar transistor, and the damping is accomplished by reducing the carrier lifetime in the laser active region only at frequencies near resonance. The advantage of the proposed method is that the damping mechanism does not affect the laser operation at any other frequency range.

Katz, J.↗