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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Processing of Complex Compound Semiconductors in Space

The purpose of this first year ground based research effort was to develop growth and characterization facilities for bulk single crystals of compound semiconductor alloys. As a system of 2-6 alloy crystal growth, C sub x Mn sub (1-x)Te was chosen since it has a relatively narrow solidus-liquidus separation serving as a suitable first model for zone melting and solution growth. Also, it allows, in principle, perfect lattice matching to Cd sub x Hg sub(1-x)Te that needs to be studied as a model for the investigation of heteroepitaxial growth from Te-solutions. A vertical zone melting furnace was built and used in the synthesis of Cd sub x Mn sub(1-x)Te from the elements and crystal growth in carbon coated fused silica crucibles of Bridgman growth geometry. Photoluminescence spectra of the crystals reveal band to band recombination at energies that agree with the reported literature data. In addition, deep luminescence is present at energies corresponding to proportional shifts from the 1.4 eV deep emission observed for bulk single crystals of CdTe.

Bachmann, K.↗
NASA NTRS1985

General theory of the transverse dielectric constant of III-V semiconducting compounds

A general model of the transverse dielectric constant of III-V compounds is developed using a hybrid method which combines the kp method with a nonlocal pseudopotential calculation. In this method the Brillouin zone is partitioned into three regions by expanding the energy bands and matrix elements about the F, X, and L symmetry points. The real and imaginary parts of the dielectric constant are calculated as a sum of the individual contributions of each region. By using this partition method, it is possible to get good insight into the dependence of the dielectric constant on the shape of the band structure.

Kahen, K. B.↗
NASA NTRS1987

Growing Single Crystals of Compound Semiconductors

Defect reduced by preventing melt/furnace contact and suppressing convention. Large crystals of compound semiconductors with few defects grown by proposed new method. Such materials as gallium arsenide and cadmium telluride produced, with quality suitable for very-large-scale integrated circuits or for large focal-plane arrays of photodetectors. Method used on small scale in Earth gravity, but needs microgravity to provide crystals large enough for industrial use.

Naumann, Robert J.↗
NASA NTRS1984

Aeroelastic-aerodynamic optimization of high speed helicopter-compound rotor

Several problems related to the aeroelastic/aerodynamic optimization of a high speed helicopter compound rotor are discussed. The helicopter fuselage vibration problem, the effects of fuselage vibrations, the source of external and periodic air loads, typical airfoil environments and configurations, rotor dynamics, vibration reduction, and requirements for the rotor design optimization analysis are among the topics covered.

Sutton, L. R.↗
NASA NTRS1987

Spectral reflectance (0.4 - 5.0 microns) of sulfur related compounds and mixtures

Studied and quantified were: (1) the spectral properties of sulfur related compounds and materials; (2) the effects of thermal history, temperature and mixing ratios on the spectral properties of these materials; and (3) the application of these results to the Jovian system, in particular, the surfaces of Io, Europa, and Amalthea, and the chromophores in the Jovian atmosphere. Major results of the study include: (1) a study of how sulfur deposition affects the band strengths in various silicates; (2) a study of how the ultraviolet absorption band of sulfur is affected by dilution in ice; (3) the application of these two sets of experimental studies to Io, in the case of silicate band strengths, and Europa, as in the case of sulfur dilution in ices.

Gradie, Jonathan C.↗
NASA NTRS1987

Compound-taper feedhorn for the DSN 70-meter antennas

A novel X-band feedhorn was designed for the Deep Space Network (DSN) 70-meter antennas. The feedhorn is a compound-taper structure consisting of a corrugated flared section and a corrugated straight section. This feedhorn is designed to closely initiate the characteristics of the standard feedhorn, while providing the proper phase center location, without adding any significant loss to the system. The use of the existing feedhorn and the ease of manufacturing the corrugated straight section have resulted in major overall cost savings.

Manshadi, F.↗
NASA NTRS1986

Experimental and raytrace results for throat-to-throat compound parabolic concentrators

Compound parabolic concentrators are nonimaging cone-shaped optics with useful angular transmission characteristics. Two cones used throat-to-throat accept radiant flux within one well-defined acceptance angle and redistribute it into another. If the entrance cone is fed with Lambertian flux, the exit cone produces a beam whose half-angle is the exit cone's acceptance angle and whose cross section shows uniform irradiance from near the exit mouth to infinity. (The pair is a beam angle transformer). The design of one pair of cones is discussed, also an experiment to map the irradiance of the emergent beam, and a raytracing program which models the cones fed by Lambertian flux. Experimental results compare favorably with raytrace results.

Leviton, D. B.↗
NASA NTRS1986

Stoichiometric disturbances in compound semiconductors due to ion implantation

A method is developed to calculate the depth distribution of the local stoichiometric disturbance (SD) resulting from ion implantation in binary-compound substrates. The calculation includes first-order recoils considering projected range straggle of projectiles and recoils and lateral straggle of recoils. The method uses tabulated final-range statistics to infer the projectile range distributions at intermediate energies. This approach greatly simplifies the calculation with little compromise on accuracy as compared to existing procedures. As an illustration, the SD profile is calculated for implantation of boron, silicon, and aluminum in silicon carbide. The results for the latter case suggest that the SD may be responsible for otherwise unexplained distortions in the annealed aluminum profile. A comparison with calculations by other investigators using the Boltzmann transport equation shows good agreement.

Avila, R. E.↗
NASA NTRS1986

Passivation of Si solar cells by hetero-epitaxial compound semiconductor coatings

A development status evaluation is made for high efficiency Si solar cells, with emphasis on the suppression of the deleterious effects of surface recombination. ZnS(0.9)Se(0.1) and GaP are identified as candidates for the reduction of surface recombination. Attention is given to methods developed for the deposition of heteroepitaxial compounds designed to block minority carrier transport to the Si solar cell surface without interfering with the majority carrier flow.

Vernon, S. M.↗
NASA NTRS1987

Evidence for superconductivity above 40 K in the La-Ba-Cu-O compound system

An apparent superconducting transition with an onset temperature above 40 K has been detected under pressure in the La-Ba-Cu-O compound system synthesized directly from a solid-state reaction of La2O3, CuO, and BaCO3 followed by a decomposition of the mixture in a reduced atmosphere. The experiment is described and the results of effects of magnetic field and pressure are discussed.

Chu, C. W.↗
NASA NTRS1987

Superconductivity at 93 K in a new mixed-phase Y-Ba-Cu-O compound system at ambient pressure

A stable and reproducible superconductivity transition between 80 and 93 K has been achieved and maintained in a Y-Ba-Cu-O compound system at ambient pressure in a simple liquid-nitrogen Dewar. An upper critical field Hc2(0) estimate of between 80 and 180 T is obtained, and the paramagnetic limiting field at 0 K for a sample with a T(c) of about 90 K is 165 T. It is suggested that the lattice parameters, the valence ratio, and the sample treatments all play a role in achieving superconductivity above 77 K.

Wu, M. K.↗
NASA NTRS1987

High-pressure study of the new Y-Ba-Cu-O superconducting compound system

Hydrostatic effects on the superconducting transition temperature of the Y-Ba-Cu-O compound system, resistively, up to 19 kbar are investigated. It is found that pressure has little effect on the superconducting state of Y-Ba-Cu-O, in marked contrast to the behavior of the K2NiF4-phase La-Ba-Cu-O and La-Sr-Cu-O systems. It is suggested that this effect may be due to chemical pressure associated with the smaller Y atoms already present in Y-Ba-Cu-O. X-ray powder-diffraction studies show that the high-temperature superconductivity in Y-Ba-Cu-O can only be attributed to one or more phases with structures different from the cubic perovskite or tetragonal layered ones.

Hor, P. H.↗
NASA NTRS1987

Superconductivity above 90 K in the square-planar compound system ABa2Cu3O(6 + x) with A = Y, La, Nd, Sm, Eu, Gd, Ho, Er, and Lu

Superconductivity has been found in the 90-K range in ABa2Cu3O(6 + x) with A = La, Nd, Sm, Eu, Gd, Ho, Er, and Lu in addition to Y. The results suggest that the unique square-planar Cu atoms, each surrounded by four or six oxygen atoms, are crucial to the superconductivity of oxides in general. In particular, the high Tc of ABa2Cu3O(6 + x) is attributed mainly to the quasi-two-dimensional assembly of the CuO2-Ba-CuO(2 + x)Ba-CuO2 layers sandwiched between two A layers, with particular emphasis in the CuO(2 + x) layers. Higher-Tc oxides are predicted for compounds with bigger assemblies of CuO2 layers coupled by Ba layers.

Hor, P. H.↗
NASA NTRS1988

Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

Collis, Ward J.↗
NASA NTRS1988

Feasibility studies of the growth of 3-5 compounds of boron by MOCVD

Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.

Manasevit, H. M.↗
NASA NTRS1988

Reinforcing of thermoplastic polycarbonate and polysulfone with carbon fibers: Production and characteristics of UD-compound objects

The production and characteristics of the carbon fiber reinforced thermoplastics polycarbonate and polysulfone are described. The production of prepregs from defined polymer solutions is emphasized along with methods of optimizing the production of compounds. The characteristics of unidirectionally reinforced thermoplastics, such as shear strength, bending strength, and impact resistance are compared with regard to fracture behavior, the influence of intermediate layers, and the behavior under cryogenic conditions and under slightly elevated temperatures. The problem of adhesion between high strength carbon fibers and thermoplastics is examined, taking into account the effect of moisture on the shear strength and the impact resistance.

Fitzer, E.↗
NASA NTRS1987

Sulphur compounds in cometary IUE spectra

From a study of cometary IUE spectra, a tentative identification of bands of the B-X systems of the SO molecule in the comet IRAS-Araki-Alcock in the 2200-2400 A region is reported, and it is suggested that sulphur compounds are more prevalent in comets than has been previously realized. S(+) and possibly SH are evident in comet Halley spectra, and new bands in the (A-X) system of CS and the (B-X) system of S2 are identified. The present results throw doubts on previous assessments of dust abundances from scattered continua in the 2900-3000 A region. The relatively strong abundance of S2 compared to OH in the Cernis and Bowell comets suggests that S2 is not well mixed and is not bound in H2O-ice.

Krishna Swamy, K. S.↗
NASA NTRS1987

Results from a compound semiconductor crystal growth experiment in a low gravity environment

A directional solidification experiment in the compound semiconductor lead tin telluride has been carried out in a low-gravity environment on board the Space Shuttle during a flight in October, 1985. Optical etching techniques and concentration profiles from wavelength dispersive electron microscopy indicate that there was a significant amount of convection during the solidifcation of the sample. A preliminary hypothesis of this result, that even at gravity levels on the order of 0.0001 g, the convective forces can be significant compared to mass transport due to diffusion, is being tested.

Crouch, Roger K.↗