Packaging pDNA by Polymeric ABC Micelles Simultaneously Achieves Colloidal Stability and Structural Control
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Plasmonic nanocrystals of highly doped metal oxides have seen rapid development in the past decade and represent a class of materials with unique optoelectronic properties. In this Perspective, we discuss doping mechanisms in metal oxides and the accompanying physics of free carrier scattering, both of which have implications in determining the properties of localized surface plasmon resonances (LSPRs) in these nanocrystals. The balance between activation and compensation of dopants limits the free carrier concentration of the most common metal oxides, placing a ceiling on the LSPR frequency. Furthermore, because of ionized impurity scattering of the oscillating plasma by dopant ions, scattering must be treated in a fundamentally different way in semiconductor metal oxide materials when compared with conventional metals. Though these effects are well-understood in bulk metal oxides, further study is needed to understand their manifestation in nanocrystals and corresponding impact on plasmonic properties, and to develop materials that surpass current limitations in free carrier concentration.
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Correction to: Nature Communications https://doi.org/10.1038/s41467-019-09737-2, published online 15 April 2019.
Production of syngas with tunable CO/H 2 ratio from renewable resources is an ideal way to provide a carbon-neutral feedstock for liquid fuel production. Ag is a benchmark electrocatalysts for CO 2 -to-CO conversion but high overpotential limits the efficiency. We synthesize AgP 2 nanocrystals (NCs) with a greater than 3-fold reduction in overpotential for electrochemical CO 2 -to-CO reduction compared to Ag and greatly enhanced stability. Density functional theory calculations reveal a significant energy barrier decrease in the formate intermediate formation step. In situ X-ray absorption spectroscopy (XAS) shows that a maximum Faradaic efficiency is achieved at an average silver valence state of +1.08 in AgP 2 NCs. A photocathode consisting of a n + p-Si wafer coated with ultrathin Al 2 O 3 and AgP 2 NCs achieves an onset potential of 0.2 V vs. RHE for CO production and a partial photocurrent density for CO at –0.11 V vs. RHE ( j –0.11, CO ) of –3.2 mA cm –2 .