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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Difluorophosphoric Acid Generation and Crossover Reactions in LiNixCoyMnzO 2 Cathodes Operating at High Voltage

Cycling lithiated metal oxides to high potential (>4.5 V vs Li) is of significant interest for the next generation of lithium ion batteries as this significantly increases the capacity and energy of cells. However, cells cycled to high potential suffer from rapid capacity fade due to a combination of thickening of the anode solid electrolyte interphase (SEI) and impedance growth on the cathode. While transition metal catalysed degradation of the anode SEI has been widely proposed as a primary source of capacity loss, a related acid induced degradation of the anode SEI is proposed. A systematic investigation of LiNi 0.5 Co 0.2 Mn 0.3 O 2 , and LiNi 0.8 Co 0.1 Mn 0.1 O 2 cathodes cycled to 4.2 and 4.6 V has been conducted and the oxidative generation of the strong acid difluorophosphoric acid (F 2 PO 2 H) has been quantified by solution Nuclear Magnetic Resonance (NMR) spectroscopy. Ex-situ surface analysis of the electrodes with X-ray Photo Electron spectroscopy (XPS) suggests that the generation of F 2 PO 2 H correlates with a thickening of the anode SEI and an increase in the fluorophosphate content of the SEI. Changes to the LiNi 0.8 Co 0.1 Mn 0.1 O 2 surface for cells cycled to 4.6 V are also consistent with the generation of acidic species. There is good correlation between the concentration F 2 PO 2 H, anode SEI degradation and the capacity loss of the cells.

25 ENERGY STORAGE↗
DOE OSTI2026

Quantifying Sources of Long-Term Voltage Decay for Rutile Iridium Oxide Anodes in Proton Exchange Membrane Water Electrolysis

To achieve aggressive hydrogen cost targets for proton exchange membrane water electrolysis (PEMWE), it is necessary to develop catalyst systems that reduce precious metal loadings while maintaining performance over extended operation. While amorphous iridium (Ir) -based catalysts exhibit high initial activity, their long-term stability remains a key limitation. In this study, the behavior of a rutile IrO2 catalyst is investigated over 4000 h of durability testing and compared to past efforts evaluating a more amorphous material. This study finds that rutile IrO2 results in a smaller decay rate (4.9 ..mu..V h-1) than an amorphous catalyst (28 ..mu..V h-1); additionally, the rutile IrO2 results in a smaller degree of Ir migration (20% to the membrane and cathode) than an amorphous catalyst (35%). This research emphasizes rutile IrO2 as a promising avenue for the development of durable, low-iridium anodes that can meet lifetime and cost targets for next-generation electrolyzer systems.

08 HYDROGEN↗
DOE OSTI2022

Evaluating Contributions of Pitch-Carbon Coating to Improved Stability of Si Anodes Through Voltage-Resolved Multi-Phase Characterization

Silicon nanoparticles have emerged as a promising alternative to graphite to improve the energy density of next-generation lithium-ion battery anodes. Nano-sized Si domains facilitate rapid ion transport and minimize particle-scale mechanical degradation, but also exhibit increased (electro)chemical reactivity with Li-ion electrolyte components due to their high surface area. We have previously demonstrated that surface modification of Si nanoparticles with pitch-carbon is an effective strategy to reduce these parasitic reactions. In the present work, we holistically evaluate the mechanistic contribution of pitch-carbon coating to the observed stability improvement over uncoated Si. We utilize coupled in situ and ex situ methods to probe changes to solid-surface, volatile headspace, and gas-phase chemistry occurring during initial cycling. Measurements taken at targeted potentials associated with electrolyte species reduction enables the decoupling of specific reaction pathways tied to interfacial stability. Further, we demonstrate the non-trivial role of gas reconsumption in dictating the nature of the passivating surface layer evolved on both uncoated and pitch-coated Si. This multi-phase analysis offers insights into the mechanism of effective surface passivation, which may be applied to inform future Si material development.

ENERGY STORAGE↗
DOE OSTI2021

Machine Learning for Improved Availability of the SNS Klystron High Voltage Converter Modulators

Beam availability has increased at the SNS, however, the targeted availability is greater than 95 %, while the SNS has failed to meet lower targets in the past. The HVCM used to power the linac klystrons have been one source of lost beam time and was chosen to explore using AI/ML techniques to improve reliability. Among the possibilities being explored are automating the tuning of HVCMs and predicting component failures such as capacitor aging, rectifier assemblies containing hundreds of diodes, and insulating oil degradation. The methodology pursued includes data cleaning, de-noising, post-analysis data labeling, and machine learning model development. We explore using Long Short-Term Memory and autoencoders for anomaly detection and prognostication used to schedule maintenance. We evaluate the use of model regularizers and constraints to improve the performance of the model and investigate methods to estimate the uncertainty of the models to provide a robust prediction with statistical interoperability. This paper describes the operational experience and known failures of the HVCMs and the proposed ML methodology and the preliminary results of training the AI/ML algorithms.

Pappas, G. C.↗
DOE OSTI2021

Fielding and analyzing performance of a prototype high voltage output gas switch for Saturn

Timing spread between the thirty-six Saturn modules affects peak electrical power delivered to the Bremsstrahlung diode and can affect vacuum power flow and impedance behavior of the load. To reduce the module spread, a new megavolt gas-insulated closing switch was developed employing design techniques developed for the Z-machine laser triggered switches while retaining Saturn’s simpler electrical triggering. Two modules were temporarily outfitted with the new switches and used separately into local resistive loads (instead of the usual Saturn electron beam load). A reliable operating point and switch time jitter at that point were the goals of the experiments. The target switch reliability is less than one pre-fire in one thousand switch-shots, and a timing standard deviation of 4 nanoseconds. The switches were able to meet both requirements but the number of tests at the chosen point are limited.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control

This project studied and implemented methods to form GaN p-n diodes using selective area regrowth to achieve selective area doping. Successful selective area doping of GaN p-n diodes is an enabling factor to realize more advanced devices such as vertical transistors. The general challenge to selective area regrowth of GaN is that the primary etch method, inductively coupled plasma (ICP), damages the crystal and causes high leakage when didoes are formed by regrowth on the etched surface. Our approach used low damage etch methods following ICP etch to remove crystal damage and reduced leakage in the regrown diode. This project demonstrated 1.6 kV etched-and-regrown GaN p-n diodes using planar (non-selective) regrowth and 840 V etched-and-regrown p-n diodes using selective area regrown. Enabling factors were use of a low-damage reactive ion etch (RIE) to remove damage caused by the primary ICP etch combined with a multi-step junction terminal extension (JTE) process. Deep level defect investigation quantitatively correlated a deep level near the middle of the GaN band gap with ICP etch-induced leakage that was greatly mitigated by using a slow, low damage RIE process. This research is economically feasible for commercialization because the processes used in this project, including substrate type and source, epitaxial crystal growth and fabrication techniques are all standard to the GaN semiconductor industry. The fundamental understanding and foundational ability to produce kV-class GaN p-n diodes through etch-and-regrowth provides a path to realize high power, high efficiency GaN power switches that can significantly outperform commercial devices for next-generation electrical power conversion and transmission systems.

36 MATERIALS SCIENCE↗