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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

CNOT-based quantum swapping of polarization and modal encoded qubits in photonic Ti:LiNbO{sub 3} channel waveguides

A photonic circuit aimed at implementing a CNOT-based quantum swapping of the modal and polarization qubits, is designed and simulated, using Ti:LiNbO{sub 3} indiffused channel waveguides. A few on-chip optical elements such as the polarization-sensitive odd-mode analyzers and combiners, along with the electrically controllable directional couplers and polarization converters, are incorporated within the circuit and together serve to realize the operation of a deterministic single-photon quantum swap gate. Entanglement generation is realized on-chip by means of two concurrent spontaneous parametric down-conversion processes in the twice periodically poled Ti:LiNbO{sub 3} waveguide, placed at the input section of the circuit. The constituent elements of the circuit are characterized separately using numerical beam propagation method in RSoft program package. Two poling periods of Λ{sub 1}=11.762 μm and Λ{sub 2}=23.667 μm are calculated for the dual periodically perturbed structure in the circuit. The directional couplers operate at V{sub DC}=31.6 V. Maximum polarization conversion efficiency is achieved by applying a constant switching voltage of V{sub EO}=4.52 V.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

High density, multi-range analog output Versa Module Europa board for control system applications

A new VMEDAC64, 12-bit 64 channel digital-to-analog converter, a Versa Module Europa (VME) module, features 64 analog voltage outputs with user selectable multiple ranges, has been developed for control system applications at Inter University Accelerator Centre. The FPGA (Field Programmable Gate Array) is the module's core, i.e., it implements the DAC control logic and complexity of VMEbus slave interface logic. The VMEbus slave interface and DAC control logic are completely designed and implemented on a single FPGA chip to achieve high density of 64 channels in a single width VME module and will reduce the module count in the control system applications, and hence will reduce the power consumption and cost of overall system. One of our early design goals was to develop the VME interface such that it can be easily integrated with the peripheral devices and satisfy the timing specifications of VME standard. The modular design of this module reduces the amount of time required to develop other custom modules for control system. The VME slave interface is written as a single component inside FPGA which will be used as a basic building block for any VMEbus interface project. The module offers multiple output voltage ranges depending upon the requirement. The output voltage range can be reduced or expanded by writing range selection bits in the control register. The module has programmable refresh rate and by default hold capacitors in the sample and hold circuit for each channel are charged periodically every 7.040 ms (i.e., update frequency 284 Hz). Each channel has software controlled output switch which disconnects analog output from the field. The modularity in the firmware design on FPGA makes the debugging very easy. On-board DC/DC converters are incorporated for isolated power supply for the analog section of the board.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1973

Electronic control circuits: A compilation

A compilation of technical R and D information on circuits and modular subassemblies is presented as a part of a technology utilization program. Fundamental design principles and applications are given. Electronic control circuits discussed include: anti-noise circuit; ground protection device for bioinstrumentation; temperature compensation for operational amplifiers; hybrid gatling capacitor; automatic signal range control; integrated clock-switching control; and precision voltage tolerance detector.

Source record↗
NASA NTRS1977

Save power in AC induction motors

Relatively simple and inexpensive circuitry improves power factor and reduces power dissipation in induction motors operating below full load. Electronic control loop conserves energy by reducing voltage applied to lightly loaded motor. Circuit forces motor to run at constant predetermined optimum power factor, regardless of load or line voltage variations. Solid-state switch varies voltage.

Nola, F. J.↗
NASA NTRS1990

Control of a GaAs monolithic Ka-band phase shifter using a high-speed optical interconnect

The use of a high-speed optical interconnect in the control of a Ka-band GaAs monolithic phase shifter is described. A 16-b serial control signal was used to modulate the output of a laser transmitter, and the transmitted optical signal was detected and demultiplexed into 16 parallel electrical outputs using a high-speed hybrid GaAs optoelectronic integrated circuit. Four of the parallel output lines were interfaced to the 4-b phase shifter, and high-speed, optically controlled switching of the phase shifter was observed at clock frequencies to 30 MHz using an interferometric technique.

Bhasin, K. B.↗
NASA NTRS2004

Vacuum arc plasma thrusters with inductive energy storage driver

An apparatus for producing a vacuum arc plasma source device using a low mass, compact inductive energy storage circuit powered by a low voltage DC supply acts as a vacuum arc plasma thruster. An inductor is charged through a switch, subsequently the switch is opened and a voltage spike of Ldi/dt is produced initiating plasma across a resistive path separating anode and cathode. The plasma is subsequently maintained by energy stored in the inductor. Plasma is produced from cathode material, which allows for any electrically conductive material to be used. A planar structure, a tubular structure, and a coaxial structure allow for consumption of cathode material feed and thereby long lifetime of the thruster for long durations of time.

Schein, Jochen↗
NASA NTRS1977

Tri-state logic circuit

A line driver including a pair of complementary transistors having their conduction paths serially connected between an operating and a reference potential and their bases connected through a first switch to a signal input terminal. A second switch is connected between the common base connection and the common connection of the conduction paths. With the second switch open and the first closed, an output voltage, responsive to the input signal, corresponding to first or second binary values is obtained. When the second switch is closed and the first opened, the transistor pair is turned off, disconnecting the line driver from its load, thereby providing tri-state logic operation.

Pryor, Richard Lee↗
DOE OSTI2021

Substation-Level Grid Topology Optimization Using Bus Splitting

Operations of substation circuit breakers are important for maintenance needs and topology reconfiguration in power systems. Bus splitting is one type of topology change where the two bus bars at a substation can become electrically disconnected under certain actions of circuit breakers. Because these events involve detailed substation modeling, they are typically not considered in routine power system operation and control. In this paper, an improved substation-level topology optimization framework is developed by expanding traditional line switching decisions by breaker-level bus splitting, which can further reduce grid congestion and generation costs. A tight McCormick relaxation is proposed to reformulate the bilinear terms in the resultant optimization problem to linear inequality constraints. Thus, a tractable mixed-integer linear program reformulation is attained that allows for efficient solutions in real-time operations. Numerical studies on the IEEE 14-bus and 118-bus systems demonstrate the computational performance and economic benefits of the proposed topology optimization approach.

bus split↗
DOE OSTI2024

Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

GaN/InGaN microLEDs are a very promising technology for next-generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage)-controlled rather than current-controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. Further, the integrated device exhibits excellent gate control, drain current control, and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching, high-efficiency microLED display and communication systems.

42 ENGINEERING↗
DOE OSTI2018

Impact of Accelerated Stress-Tests on SiC MOSFET Precursor Parameters

Integrating SiC power MOSFETs is very attractive for advancing power electronic system performance, yet the system reliability with new devices remains in question. This work presents an overview of accelerated lifetime tests and the packaging and semiconductor failure mechanisms they excite. The experiments explained here includes High Temperature Gate Bias (HTGB), Switching Cycling, Power Cycling, and Thermal Cycling. These experiments stress different failure mechanisms, that show degradation in different device parameters including, but not limited to, threshold voltage and on-resistance. These four experiments help illustrate the spectrum between device and package degradation that can be used to design more reliable power electronic circuits.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Repairable and Reconfigurable Structured Liquid Circuits

The advance of printed electronics is significantly bolstered by the development of liquid-state electronics that overcome the inherent limitations in flexibility and reconfigurability of solid-state electronics. By integrating the biocompatibility and conductivity of sulfonated polyaniline (S-PANI) and phytic acid (PA) with the reconfigurability of structured liquids, highly conductive all-liquid threads are developed. The dense packing and overlap of PA/S-PANI complexes at an oil/water interface promotes in-plane electron transport, and standard four-point probe measurements of PA/S-PANI interfacial assemblies demonstrate enhanced electrical properties. Notably, the rapid jetting of the ink phase into the matrix phase allows for liquid threads to be printed, enabling the fabrication of large-scale, conductive pathways between two electrodes and liquid circuits. Upon mechanical cleavage of the liquid wires, circuits can be broken, but will easily self-repair using an electric field, making this motif useful in the design of switches as well as restoring conductive pathways in series or in parallel. In conclusion, the demonstrated flexibility and reconfigurability these PA/S-PANI wires possess hold significant promise for their practical use in the design of flexible and adaptive bioelectronics that can be repaired on demand, signifying a transformative step in the evolution of liquid electronic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Photo-induced ultrafast active ion transport through graphene oxide membranes

Layered graphene oxide membranes (GOM) with densely packed sub-nanometer-wide lamellar channels show exceptional ionic and molecular transport properties. Mass and charge transport in existing materials follows their concentration gradient, whereas attaining anti-gradient transport, also called active transport, remains a great challenge. Here, we demonstrate a coupled photon-electron-ion transport phenomenon through the GOM. Upon asymmetric light illumination, cations are able to move thermodynamically uphill over a broad range of concentrations, at rates much faster than that via simple diffusion. We propose, as a plausible mechanism, that light irradiation reduces the local electric potential on the GOM following a carrier diffusion mechanism. When the illumination is applied to an off-center position, an electric potential difference is built that can drive the transport of ionic species. We further develop photonic ion switches, photonic ion diodes, and photonic ion transistors as the fundamental elements for active ion sieving and artificial photosynthesis on synthetic nanofluidic circuits.

42 ENGINEERING↗
DOE OSTI2016

On-chip photonic system using suspended p-n junction InGaN/GaN multiple quantum wells device and multiple waveguides

We propose, fabricate, and characterize the on-chip integration of suspended p-n junction InGaN/GaN multiple quantum wells (MQWs) device and multiple waveguides on the same GaN-on-silicon platform. The integrated devices are fabricated via a wafer-level process and exhibit selectable functionalities for diverse applications. As the suspended p-n junction InGaN/GaN MQWs device operates under a light emitting diode (LED) mode, part of the light emission is confined and guided by the suspended waveguides. The in-plane propagation along the suspended waveguides is measured by a micro-transmittance setup. The on-chip data transmission is demonstrated for the proof-of-concept photonic integration. As the suspended p-n junction InGaN/GaN MQWs device operates under photodiode mode, the light is illuminated on the suspended waveguides with the aid of the micro-transmittance setup and, thus, coupled into the suspended waveguides. The guided light is finally sensed by the photodiode, and the induced photocurrent trace shows a distinct on/off switching performance. These experimental results indicate that the on-chip photonic integration is promising for the development of sophisticated integrated photonic circuits in the visible wavelength region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1970

A transformer of closely spaced pulsed waveforms

Passive circuit, using diodes, transistors, and magnetic cores, transforms the voltage of repetitive positive or negative pulses. It combines a pulse transformer with switching devices to effect a resonant flux reset and can transform various pulsed waveforms that have a nonzero average value and are relatively cosely spaced in time.

Niedra, J.↗
NASA NTRS2003

Could Zinc Whiskers Be Impacting Your Electronic Systems? Raise Your Awareness

During the past several decades electrical short circuits induced by "Zinc Whiskers" have been cited as the root cause of failure for various electronic systems (e.g., apnea monitors, telecom switches). These tiny filaments of zinc that may grow from some zinc-coated items (especially those coated by electroplating processes) have the potential to induce electrical shorts in exposed circuitry. Through this article, the authors describe a particular failure scenario attributed to zinc whiskers that has affected many facilities (including some NASA facilities) that utilized zinc-coated raised "access" floor tiles and support structures. Zinc whiskers that may be growing beneath your raised floor have the potential to wreak havoc on electronic systems operating above the floor.

Sampson, Michael↗
NASA NTRS2005

RF MEMS Phase Shifters and their Application in Phase Array Antennas

Electronically scanned arrays are required for space based radars that are capable of tracking multiple robots, rovers, or other assets simultaneously and for beam-hopping communication systems between the various assets. ^Traditionally, these phased array antennas used GaAs Monolithic Microwave Integrated Circuit (MMIC) phase shifters, power amplifiers, and low noise amplifiers to amplify and steer the beam, but the development of RF MEMS switches over the past ten years has enabled system designers to consider replacing the GaAs MMIC phase shifters with RF Micro-Electro Mechanical System (MEMS) phase shifters. In this paper, the implication of replacing the relatively high loss GaAs MMICs with low loss MEMS phase shifters is investigated.

Scardelletti, Maximilian↗