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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Nonvolatile voltage controlled molecular spin state switching

Voltage-controlled room temperature isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] thin films is demonstrated. This isothermal switching is evident in thin film bilayer structures where the molecular spin crossover film is adjacent to a molecular ferroelectric. The adjacent molecular ferroelectric, either polyvinylidene fluoride hexafluoropropylene or croconic acid (C 5 H 2 O 5 ), appears to lock the spin crossover [Fe{H 2 B(pz) 2 } 2 (bipy)] molecular complex largely in the low or high spin state depending on the direction of ferroelectric polarization. In both a planar two terminal diode structure and a transistor structure, the voltage controlled isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] is accompanied by a resistance change and is seen to be nonvolatile, i.e., retained in the absence of an applied electric field. Here, the result appears general, as the voltage controlled nonvolatile switching can be made to work with two different molecular ferroelectrics: croconic acid and polyvinylidene fluoride hexafluoropropylene.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Most semiconductors exhibit a saturation of free carriers when heavily doped with extrinsic dopants. This carrier saturation or “doping limit” is known to be related to the formation of native compensating defects, which, in turn, depends on the energy positions of their conduction band minimum and valence band maximum. Here, we carried out a systematic study on the n-type doping limit of GaAs via ion implantation and showed that this doping limitation can be alleviated by the transient process of pulsed laser melting (PLM). For n-type doping, both group VI (S) and amphoteric group IV (Si and Ge) dopants were implanted in GaAs. For comparison, p-type doping was also studied using Zn as the acceptor. Implanted dopants were activated by the PLM method, and the results are compared to rapid thermal annealing (RTA). Our results reveal that for all n-type dopants, while implantation followed by the RTA results in a similar saturation electron concentration of 2–3 × 10 18 cm –3 , the transient PLM process is capable of trapping high concentration of dopants in the substitutional site, giving rise to a carrier concentration of >10 19 cm –3 , exceeding the doping limit of GaAs. However, due to scatterings from point defects generated during PLM, the mobility of n-type GaAs after PLM is low (~80–260 cm 2 /V s). Subsequent RTA after PLM (PLM + RTA) is able to remove these point defects and recover the mobility to ~1000–2000 cm2/V s. The carrier concentrations of these PLM + RTA samples are reduced but are still a factor of 3 higher than RTA only GaAs. This can be understood as the dopants are already incorporated in the substitutional site after PLM; they are less likely to be “deactivated” by subsequent RTA. This work is significant to the understanding of doping mechanisms in semiconductors and provides a means for device applications, which require materials with ultra-high doping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Emergent geometric frustration of artificial magnetic skyrmion crystals

Magnetic skyrmions have been receiving growing attention as potential information storage and magnetic logic devices since an increasing number of materials have been identified that support skyrmion phases. Explorations of artificial frustrated systems have led to new insights into controlling and engineering new emergent frustration phenomena in frustrated and disordered systems. Here, we propose a skyrmion spin ice, giving a unifying framework for the study of geometric frustration of skyrmion crystals (SCs) in a nonfrustrated artificial geometrical lattice as a consequence of the structural confinement of skyrmions in magnetic potential wells. The emergent ice rules from the geometrically frustrated SCs highlight a novel phenomenon in this skyrmion system: emergent geometrical frustration. We demonstrate how SC topology transitions between a nonfrustrated periodic configuration and a frustrated icelike ordering can also be realized reversibly. The proposed artificial frustrated skyrmion systems can be annealed into different ice phases with an applied current-induced spin-transfer torque, including a long-range ordered ice rule obeying ground state, as-relaxed random state, biased state, and monopole state. In conclusion, the spin-torque reconfigurability of the artificial skyrmion ice states, difficult to achieve in other artificial spin ice systems, is compatible with standard spintronic device fabrication technology, which makes the semiconductor industrial integration straightforward.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Point and extended defects in heteroepitaxial 𝛽−G⁡a 2 ⁢O 3 films

G⁡a 2 ⁢O 3 is emerging as an excellent potential semiconductor for high power and optoelectronic devices. However, the successful development of G⁡a 2⁢ O 3 in a wide range of applications requires a full understanding of the role and nature of its point and extended defects. Here, in this work, high quality epitaxial G⁡a 2 ⁢O 3 films were grown on sapphire substrates by metal-organic chemical vapor deposition and fully characterized in terms of structural, optical, and electrical properties. Then defects in the films were investigated by a combination of depth-resolved Doppler broadening and lifetime of positron annihilation spectroscopies and thermally stimulated emission (TSE). Positron annihilation techniques can provide information about the nature and concentration of defects in the films, while TSE reveals the energy level of defects in the bandgap. Despite very good structural properties, the films exhibit short positron diffusion length, which is an indication of high defect density and long positron lifetime, a sign for the formation of Ga vacancy related defects and large vacancy clusters. These defects act as deep and shallow traps for charge carriers as revealed from TSE, which explains the reason behind the difficulty of developing conductive G⁡a 2 ⁢O 3 films on non-native substrates. Positron lifetime measurements also show nonuniform distribution of vacancy clusters throughout the film depth. Further, the work investigates the modification of defect nature and properties through thermal treatment in various environments. It demonstrates the sensitivity of G⁡a 2 ⁢O 3 microstructures to the growth and thermal treatment environments and the significant effect of modifying defect structure on the bandgap and optical and electrical properties of G⁡a 2 ⁢O 3 .

defects↗
DOE OSTI2018

Perovskite Quantum Dots. A New Absorber for Perovskite-Perovskite Tandem Solar Cells

The nanoscale properties of CsPbI 3 quantum dots allows for the advantageous manipulation of its phase diagram. We show that these all-inorganic halide perovskite nanocrystals can be used to fabricate colloidal perovskite quantum dot solar cells with low voltage losses. Despite only recently emerging on the photovoltaic scene, CsPbI 3 quantum dot solar cells have already achieved approximately 85% of their Shockley-Quessier limit open-circuit voltage, among the lowest voltage loss achieved for any material with a band gap of 1.7 eV, excepting III-V semiconductors. The low losses in these devices recently led to a world record certified quantum dot solar cell efficiency of 13.4%. While single junction thin film perovskite solar cells have surpassed 22% power conversion efficiency, perovskite-perovskite tandem solar cells offer the potential for power conversion efficiencies exceeding 30%. However, to accomplish this ambitious goal, perovskite solar cells must be designed with low losses and the appropriate band gaps, which differ from the ideal band gap for single junction perovskite solar cells. In this respect, the incredibly low voltage loss and tunable band gap of CsPbI 3 quantum dots make them ideally suited for all-perovskite tandem solar cell applications.

14 SOLAR ENERGY↗
DOE OSTI2026

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Thermal Optimization of a Silicon Carbide, Half-Bridge Power Module

This project describes the modeling process to design the packaging and heat exchanger for a half-bridge wide-bandgap (WBG) power semiconductor module. The module uses two silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET) devices per switch position that are soldered to an aluminum nitride, direct-bond copper (DBC) substrate. A baseplate cooling configuration (e.g., no thermal grease) is used along with a water-ethylene glycol, jet-impingement-style heat exchanger. The heat exchanger was designed to be fabricated using prototyping equipment from the National Renewable Energy Laboratory, complies with automotive standards (for minimal channel sizes, flow rates, and coolant), and considers reliability aspects (i.e., erosion/corrosion). Device-scale computational fluid dynamics (CFD) is used first to design the slot jet impingement cooling configuration and compute the effective heat transfer coefficient (HTC) of the concept. The computed HTCs are then used as boundary conditions for a finite element study to optimize the package geometry (e.g., device layout and baseplate thickness) to minimize thermal resistance and minimize temperature variation between the module's four devices. Finally, a fluid manifold is designed to generate the slot jets and cool the devices. Module-scale CFD predicts a relatively low junction-to-fluid thermal resistance of 16.7 mm2 K/W, a 1.4 degrees C temperature variation between devices, and a total pressure drop of 5,860 Pa (0.85 psi) for the design. The thermal resistance of the module design is about 67% lower than the 2015 BMW i3 power electronics/modules thermal resistance.

DIRECT ENERGY CONVERSION↗
DOE OSTI2014

Generic trend of work functions in transition-metal carbides and nitrides

Transition-metal carbides and nitrides (TMCs and TMNs) are promising electrode materials for various electronic devices such as metal-oxide-semiconductor field-effect transistors and metal-insulator-metal capacitors. In this paper, the work functions of TMCs and TMNs are discussed systematically. Based upon the origin of the work function, the effect upon transition metal species by different periodic table groups is explained, carbides are compared with nitrides for the same transition metal, and the effect of carbon or nitrogen vacancies is discussed. In addition, a method to estimate the generic trend of the work function is proposed for TMC{sub x}, TMN{sub x}, TMC{sub 1−y}N{sub y} (transition metal carbonitrides), and TM{sub 1−z}TM′{sub z}C (alloy carbides)

36 MATERIALS SCIENCE↗
DOE OSTI2022

Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO 2 )–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO 2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. Additionally, the possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Evaluating the coherence and time-domain profile of quantum cascade laser frequency combs

Recently, much attention has been focused on the generation of optical frequency combs from quantum cascade lasers. We discuss how fast detectors can be used to demonstrate the mutual coherence of such combs, and present an inequality that can be used to quantitatively evaluate their performance. We discuss several technical issues related to shifted wave interference Fourier Transform spectroscopy (SWIFTS), and show how such measurements can be used to elucidate the time-domain properties of such combs, showing that they can possess signatures of both frequency-modulation and amplitude-modulation.

42 ENGINEERING↗
DOE OSTI2015

Field-effect P-N junction

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

14 SOLAR ENERGY↗
DOE OSTI2016

Bulk semiconducting scintillator device for radiation detection

A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI.sub.2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Perovskite Quantum Dots: A New Absorber for Perovskite-Perovskite Tandem Solar Cells: Preprint

The nanoscale phase stabilization of CsPbI3 quantum dots allows for the advantageous manipulation of its phase diagram. We show that these all inorganic halide perovskite nanocrystals can be used to fabricate colloidal perovskite quantum dot solar cells with incredibly low voltage losses. Despite recently emerging on the photovoltaic scene, CsPbI3 quantum dot solar cells have already achieved approximately 85% of their Shockley-Quessier limit open-circuit voltage, among the lowest voltage loss achieved for any material with a band gap of 1.7 eV, excepting III-V semiconductors. The low losses in these devices recently led to a world record certified quantum dot solar cell efficiency of 13.4%. While single junction thin film perovskite solar cells have surpassed 22% power conversion efficiency, perovskite-perovskite tandem solar cells offer the potential for power conversion efficiencies exceeding 30%. However, to accomplish this ambitious goal, perovskite solar cells must be designed with incredibly low losses and the appropriate band gaps, which differ from the ideal band gap for single junction perovskite solar cells. In this respect, the incredibly low voltage loss and tunable band gap of CsPbI3 quantum dots make them ideally suited for all-perovskite tandem solar cell applications.

14 SOLAR ENERGY↗
DOE OSTI2018

Polymer-hybrid electro-optic devices and method of fabricating polymer-hybrid electro-optic devices

A polymer-hybrid electro-optic device is fabricated by providing a semiconductor substrate, depositing a metal electrode layer on the semiconductor substrate, depositing a dielectric barrier core layer within a gap of the metal electrode layer, patterning a polymer layer to cover the dielectric barrier core layer and partially covering the metal electrode layer, infiltrating the polymer layer with an inorganic component to form a hybrid oxide-polymer layer, and removing excess inorganic component from the semiconductor substrate and metal electrode layer.

Ocola, Leonidas E.↗
DOE OSTI2019

Hybrid photo-electrochemical and photo-voltaic cells

This disclosure provides systems, methods, and apparatus related to a hybrid photo-electrochemical and photo-voltaic cell. In one aspect, device includes a substrate comprising a semiconductor, a transparent conductor disposed on the second surface of the substrate, a photoanode disposed on the transparent conductor, an electrolyte in electrical communication with the photoanode, and an electrode in contact with the electrolyte. The substrate is doped with a first n-type dopant. A first area of a first surface of the substrate is heavily doped with a first p-type dopant. A second area of the first surface of the substrate is heavily doped with a second n-type dopant. The second surface of the substrate is heavily doped with a second p-type dopant. The electrode is in electrical contact with the second area. The first area is in electrical contact with the second area through an electrical load.

14 SOLAR ENERGY↗
DOE OSTI2021

Efficient solar cells using all-organic nanocrystalline networks

An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer; depositing a layer of a second organic semiconductor material on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; and depositing the first organic semiconductor material on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed. The depositing of the first and second organic semiconductor materials are alternated a number of times until a final layer of the second organic material is added to form a continuous layer. A second electrode is deposited over this final layer. One of the first electrode and the second electrode is transparent, and the first organic semiconductor material is one or more donor-type materials or one or more acceptor-type materials relative to second organic semiconductor material, which is one or more materials of the other material type.

Sun, Kai↗
DOE OSTI2015

Residual waste detection in HLW tanks - 15701

This research uses commercial sonar technology to monitor residual waste in the U.S. Department of Energy's (DOE) Hanford Site high-level-waste staging tanks, with primary focus on the detection and imaging of the settled solids at specified areas of interest along the tank surface within a limited amount of time. High-level waste (HLW) is generated at the US-DOE Hanford Site as a by-product from the processing of nuclear materials. Waste is currently stored in 177 underground carbon-steel waste tanks. Pulse jet mixers (PJM) are often used to break loose and suspend the solids that have settled at the bottom of the tanks. A typical tank can have 6-8 pulse tubes. The Solid Liquid Interface Monitor (SLIM) must be capable of measuring dynamic movements in Region 1 zone between each PJM cycle. SLIM was originally developed to map the sludge/supernate interface within the U.S. DOE Hanford Site's HLW tanks. SLIM is a dual-axis mechanically rotating sonar and consists of an acoustic transducer, rotation motor with gearbox, tilt motor, position reference sensor, and pressure balancing mechanisms and its associated deployment platform. The sonar gathers a swath of data in the horizontal plane and rotates the transducer through a programmed angle around the vertical axis. Oil-filled device. No user serviceable parts. No semiconductors. Hard anodized aluminum and polyurethane delrin. May be deployed in areas of significant radioactivity. Kaolin will be used during mixing operations in order to simulate the physical properties of the expected slurry. In order to reduce the amount of time needed to image and object, all settings were decreased to their minimal state. The low resolution settings provide insufficient data for the manufacturer's 3D profiler to compile a visible point cloud and much less to allow the meshing algorithm to work properly. Several filtering algorithms have been applied to each scan in order to remove erroneous spikes and ghosting effects. Data has been collected for the mixing process of kaolin. This data consists of scans executed while the pump was active and inactive. The imaging algorithm has also been used with data derived from scans of 3% or less of kaolin. Future work: Mixing of kaolin within an experimental tank will be conducted in order to simulate the settling time of the HLW within the tank. The same filtering algorithms will be applied to each of these scans to evaluate the SLIM's efficiency to image solids at the bottom of a tank through increasing volume of kaolin.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗