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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn{sub 4}N epitaxial thin film

We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Room temperature alcohol sensing by oxygen vacancy controlled TiO{sub 2} nanotube array

Oxygen vacancy (OV) controlled TiO{sub 2} nanotubes, having diameters of 50–70 nm and lengths of 200–250 nm, were synthesized by electrochemical anodization in the mixed electrolyte comprising NH{sub 4}F and ethylene glycol with selective H{sub 2}O content. The structural evolution of TiO{sub 2} nanoforms has been studied by field emission scanning electron microscopy. Variation in the formation of OVs with the variation of the structure of TiO{sub 2} nanoforms has been evaluated by photoluminescence and X-ray photoelectron spectroscopy. The sensor characteristics were correlated to the variation of the amount of induced OVs in the nanotubes. The efficient room temperature sensing achieved by the control of OVs of TiO{sub 2} nanotube array has paved the way for developing fast responding alcohol sensor with corresponding response magnitude of 60.2%, 45.3%, and 36.5% towards methanol, ethanol, and 2-propanol, respectively.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Efficient room temperature spin-Hall injection across an oxide barrier

Spin Hall injection is demonstrated at room temperature using Pt metal and AlO{sub x} barriers. A substantial spin accumulation, comparable to that of a magnetic spin injection, is transferred into a mesoscopic Cu wire from an adjacent Pt wire across an AlO{sub x} barrier. The Pt spin Hall angle is 0.030 ± 0.007 when assuming a Pt spin diffusion length λ{sub pt} > 6 nm and 0.09 ± 0.02 when assuming λ{sub pt} = 2 nm. Nearly (66 ± 6)% of the spin accumulation on the Pt surface is transferred into the Cu across the AlO{sub x}, enabling an efficient spin Hall injection scheme.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Magnetic properties of epitaxial Fe{sub 3}O{sub 4} films with various crystal orientations and tunnel magnetoresistance effect at room temperature

Fe{sub 3}O{sub 4} is a ferrimagnetic spinel ferrite that exhibits electric conductivity at room temperature (RT). Although the material has been predicted to be a half metal according to ab-initio calculations, magnetic tunnel junctions (MTJs) with Fe{sub 3}O{sub 4} electrodes have demonstrated a small tunnel magnetoresistance (TMR) effect. Not even the sign of the tunnel magnetoresistance ratio has been experimentally established. Here, we report on the magnetic properties of epitaxial Fe{sub 3}O{sub 4} films with various crystal orientations. The films exhibited apparent crystal orientation dependence on hysteresis curves. In particular, Fe{sub 3}O{sub 4}(110) films exhibited in-plane uniaxial magnetic anisotropy. With respect to the squareness of hysteresis, Fe{sub 3}O{sub 4} (111) demonstrated the largest squareness. Furthermore, we fabricated MTJs with Fe{sub 3}O{sub 4}(110) electrodes and obtained a TMR effect of −12% at RT. The negative TMR ratio corresponded to the negative spin polarization of Fe{sub 3}O{sub 4} predicted from band calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Hybrid systems of AlInP microdisks and colloidal CdSe nanocrystals showing whispering-gallery modes at room temperature

We report on the realization of hybrid systems composed of passive optical microdisk resonators prepared from epitaxial layer systems and nanocrystal quantum emitters synthesized by colloidal chemistry. The AlInP disk material allows for the operation in the visible range, as probed by CdSe-based nanocrystals. Photoluminescence spectra at room temperature reveal sets of whispering-gallery modes consistent with finite-difference time-domain simulations. In the experiments, a special sample geometry renders it possible to detect resonant optical modes perpendicular to the disk plane.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Excess Ni-doping induced enhanced room temperature magneto-functionality in Ni-Mn-Sn based shape memory alloy

Present work reports on the observation of large magnetoresistance (∼−30% at 80 kOe) and magnetocaloric effect (∼12 J·kg{sup −1}·K{sup −1} for 0–50 kOe) near room temperature (∼290 K) on the Ni-excess ferromagnetic shape memory alloy Ni{sub 2.04}Mn{sub 1.4}Sn{sub 0.56}. The sample can be thought of being derived from the parent Ni{sub 2}Mn{sub 1.4}Sn{sub 0.6} alloy, where excess Ni was doped at the expense of Sn. Such Ni doping enhances the martensitic transition temperature and for the Ni{sub 2.04}Mn{sub 1.4}Sn{sub 0.56} it is found to be optimum (288 K). The doped alloy shows enhanced magneto-functional properties as well as reduced saturation magnetization as compared to the undoped counterpart at low temperature. A probable increment of antiferromagnetic correlation between Mn-atoms on Ni substitution can be accounted for the enhanced magneto-functional properties as well as reduction in saturation moment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Tailoring room temperature photoluminescence of antireflective silicon nanofacets

In this paper, a fluence-dependent antireflection performance is presented from ion-beam fabricated nanofaceted-Si surfaces. It is also demonstrated that these nanofacets are capable of producing room temperature ultra-violet and blue photoluminescence which can be attributed to inter-band transitions of the localized excitonic states of different Si-O bonds at the Si/SiO{sub x} interface. Time-resolved photoluminescence measurements further confirm defect-induced radiative emission from the surface of silicon nanofacets. It is observed that the spectral characteristics remain unchanged, except an enhancement in the photoluminescence intensity with increasing ion-fluence. The increase in photoluminescence intensity by orders of magnitude stronger than that of a planar Si substrate is due to higher absorption of incident photons by nanofaceted structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Structural phase transition, narrow band gap, and room-temperature ferromagnetism in [KNbO{sub 3}]{sub 1−x}[BaNi{sub 1/2}Nb{sub 1/2}O{sub 3−δ}]{sub x} ferroelectrics

Structural phase transition, narrow band gap (E{sub g}), and room-temperature ferromagnetism (RTFM) have been observed in the [KNbO{sub 3}]{sub 1−x}[BaNi{sub 1/2}Nb{sub 1/2}O{sub 3−δ}]{sub x} (KBNNO) ceramics. All the samples have single phase perovskite structure, but exhibit a gradual transition behaviour from the orthorhombic to a cubic structure with the increase of x. Raman spectroscopy analysis not only corroborates this doping-induced change in normal structure but also shows the local crystal symmetry for x ≥ 0.1 compositions to deviate from the idealized cubic perovskite structure. A possible mechanism for the observed specific changes in lattice structure is discussed. Moreover, it is noted that KBNNO with compositions x = 0.1–0.3 have quite narrow E{sub g} of below 1.5 eV, much smaller than the 3.2 eV band gap of parent KNbO{sub 3} (KNO), which is due to the increasing Ni 3d electronic states within the gap of KNO. Furthermore, the KBNNO materials present RTFM near a tetragonal to cubic phase boundary. With increasing x from 0 to 0.3, the magnetism of the samples develops from diamagnetism to ferromagnetism and paramagnetism, originating from the ferromagnetic–antiferromagnetic competition. These results are helpful in the deeper understanding of phase transitions, band gap tunability, and magnetism variations in perovskite oxides and show the potential role, such materials can play, in perovskite solar cells and multiferroic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electrical characterization of H{sub 2}S adsorption on hexagonal WO{sub 3} nanowire at room temperature

We have characterized the electrical transport properties of Au/WO{sub 3} nanowire/Au devices in ambient air and gaseous H{sub 2}S to investigate the adsorption kinetics of H{sub 2}S molecules on the surface of WO{sub 3} nanowire at room temperature. The WO{sub 3} nanowire devices exhibit increasing linear conductance and electrical hysteresis in H{sub 2}S. Furthermore, the contact type between Au electrode and WO{sub 3} nanowire can be converted from original ohmic/Schottky to Schottky/ohmic after being exposed to H{sub 2}S. These results suggest that adsorbed H{sub 2}S molecules are oxidized by holes to form hydrogen ions and S atoms, which will result in formation of hydrogen tungsten bronze and desorption of previously chemically adsorbed H{sub 2}O molecules. Adsorbed H{sub 2}S molecules can also oxidize previously adsorbed and ionized oxygen, which will release the electrons from the ionized oxygen and then weaken upward band bending at the surface of WO{sub 3} nanowire.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Fast, high-fidelity, all-optical and dynamically-controlled polarization gate using room-temperature atomic vapor

We demonstrate a fast, all-optical polarization gate in a room-temperature atomic medium. Using a Polarization-Selective-Kerr-Phase-Shift (PSKPS) technique, we selectively write a π phase shift to one circularly-polarized component of a linearly-polarized input signal field. The output signal field maintains its original strength but acquires a 90° linear polarization rotation, demonstrating fast, high-fidelity, dynamically-controlled polarization gate operation. The intensity of the polarization-switching field used in this PKSPK-based polarization gate operation is only 2 mW/cm{sup 2}, which would be equivalent to 0.5 nW of light power (λ = 800 nm) confined in a typical commercial photonic hollow-core fiber. This development opens a realm of possibilities for potential future extremely low light level telecommunication and information processing systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of device performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Oxygen-vacancy-induced room-temperature magnetization in lamellar V{sub 2}O{sub 5} thin films

In this work, we study the local atomic and electronic structures as well as oxygen-vacancy-induced magnetic properties of electrodeposited V{sub 2}O{sub 5} films. Unlike stoichiometric V{sub 2}O{sub 5}, which is a diamagnetic lamellar semiconductor, our oxygen-defective V{sub 2}O{sub 5} films are ferromagnetic at room-temperature and their saturation magnetization decreases with air exposure time. X-ray absorption spectroscopy was used to monitor the aging effect on these films, revealing that freshly-made samples exhibit only local crystalline order, whereas the aged ones undoubtedly show an enhancement of crystallinity and coordination symmetry. The mean number of oxygen atoms around V tends to increase, indicating a decrease of oxygen vacancies with time. Concurrently with the decrease of oxygen vacancies, a loss of saturation magnetization is also observed. Hence, it can be concluded that the ferromagnetism of the V{sub 2}O{sub 5} films originates from a vacancy-induced mechanism, confirming the universality of this class of ferromagnetism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Room temperature broadband terahertz gains in graphene heterostructures based on inter-layer radiative transitions

We exploit inter-layer radiative transitions to provide gains to amplify terahertz waves in graphene heterostructures. This is achieved by properly doping graphene sheets and aligning their energy bands so that the processes of stimulated emissions can overwhelm absorptions. We derive an expression for the gain estimation and show the gain is insensitive to temperature variation. Moreover, the gain is broadband and can be strong enough to compensate the free carrier loss, indicating graphene based room temperature terahertz lasers are feasible.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Calculation of room temperature conductivity and mobility in tin-based topological insulator nanoribbons

Monolayers of tin (stannanane) functionalized with halogens have been shown to be topological insulators. Using density functional theory (DFT), we study the electronic properties and room-temperature transport of nanoribbons of iodine-functionalized stannanane showing that the overlap integral between the wavefunctions associated to edge-states at opposite ends of the ribbons decreases with increasing width of the ribbons. Obtaining the phonon spectra and the deformation potentials also from DFT, we calculate the conductivity of the ribbons using the Kubo-Greenwood formalism and show that their mobility is limited by inter-edge phonon backscattering. We show that wide stannanane ribbons have a mobility exceeding 10{sup 6} cm{sup 2}/Vs. Contrary to ordinary semiconductors, two-dimensional topological insulators exhibit a high conductivity at low charge density, decreasing with increasing carrier density. Furthermore, the conductivity of iodine-functionalized stannanane ribbons can be modulated over a range of three orders of magnitude, thus rendering this material extremely interesting for classical computing applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Highly spin-polarized current in Co-substituted Fe{sub 3}O{sub 4} epitaxial thin films at room temperature

Epitaxial thin films of cobalt ferrite Co{sub x}Fe{sub 3−x}O{sub 4} (x = 0.0, 0.5, and 1.0) were fabricated on α-Al{sub 2}O{sub 3} (001) substrates using pulsed laser deposition. It was found that the coercive force of the cobalt ferrite films could be tuned by changing the Co content. The films prepared under low oxygen pressure (1.0 × 10{sup −6 }Pa) showed semiconducting behavior even for x = 1.0. X-ray photoelectron spectroscopy revealed that the Co ions were 2{sup +} for all compositions. On the other hand, it was found that the Fe ions were in the Fe{sup 2+}/Fe{sup 3+} valence state, which may cause small-polaron hopping among the Fe-3d electrons in the films. An anomalous Hall effect was observed in the Co{sub 0.5}Fe{sub 2.5}O{sub 4} film even at 300 K, suggesting that carriers in the films were highly spin-polarized at room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Low voltage tunneling magnetoresistance in CuCrO{sub 2}-based semiconductor heterojunctions at room temperature

CuCrO{sub 2}-based heterojunction diodes with rectifying characteristics have been fabricated by combining p-type Mg-doped CuCrO{sub 2} and n-type Al-doped ZnO. It was found that the current for the heterojunction in low bias voltage region is dominated by the trap-assisted tunneling mechanism. Positive magnetoresistance (MR) effect for the heterojunction can be observed at room temperature due to the tunneling-induced antiparallel spin polarization near the heterostructure interface. The MR effect becomes enhanced with the magnetic field, and shows the maximum at a bias voltage around 0.5 V. The phenomena indicate that the CuCrO{sub 2}-based heterojunction is a promising candidate for low-power semiconductor spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Carrier thermalization under stimulated emission in In{sub 0.17}Ga{sub 0.83}N epilayer at room temperature

We elucidate a strong room temperature stimulated emission (SE) of In{sub 0.17}Ga{sub 0.83}N epilayer grown by molecular beam epitaxy under the subpicosecond pulse excitation. The SE peak at 428 nm emerges on the higher energy side of the spontaneous emission in photoluminescence spectra when the excitation density exceeds the threshold of ∼3.68 mJ/cm{sup 2}. Nondegenerate transient differential reflectivity measurements show that a multi-stage carrier thermalization from excited states to localized edge states and stimulated emission dominate the decay processes of photogenerated carriers under various excitation densities. Our results indicate that the existence of phonon bottleneck effect could result in a slow thermalization process in the InGaN material even under the condition of stimulated emission.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600 nm down to 60 nm in size. The structural analysis reveals further fragmentation of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline quality, separated by amorphization areas. We use neutron irradiation to create silicon vacancies, demonstrating near infrared photoluminescence. Finally, we detect room-temperature spin resonances of these silicon vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use them not only as in-vivo luminescent markers but also as magnetic field and temperature sensors, allowing for monitoring various physical, chemical, and biological processes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗