Magnetic phase transitions and electrical switching in Gd5(Sn0.3Ge3.7) induced by magnetic field
Temperature and magnetic field dependences of the magnetization and electrical resistivity of zero-field-cooled (ZFC) Gd 5 (Sn 0.3 Ge 3.7 ) with a distinctly layered crystal structure have been studied. The unit cell of Gd 5 Ge 4 -based compounds is formed by 2D-like fragments, so-called slabs. Between 4.2 and 17 K, ZFC Gd 5 (Sn 0.3 Ge 3.7 ) shows an antiferromagnetic state [AFM(I)], which can be irreversibly transformed by a magnetic field to the ferromagnetic (FM) state. The critical magnetic field required for the irreversible AFM(I)-FM transition in Gd 5 (Sn 0.3 Ge 3.7 ) at 4.2 K is 38 kOe, which is 2-fold larger than observed in Gd 5 Ge 4 , 19 kOe. Additionally, ZFC Gd 5 Sn 0.3 Ge 3.7 ) above ˜30K shows another antiferromagnetic state [AFM(II)], which can be reversibly transformed by a magnetic field to the FM state. The difference between FM(I) and AFM(II) states (phases) in Gd 5 (Sn 0.3 Ge 3.7 ) can be attributed to the orientation of Gd magnetic moments, i.e., their orientation perpendicular or parallel to the slabs. In the temperature range of 17 K≤T≤30 K, both AFM(I) and FM(II) states (phases) may coexist in the alloy and can be irreversibly or reversibly transformed to the FM state. Magnetic phase transitions in Gd 5 (Sn 0.3 Ge 3.7 ) are accompanied with reversible or irreversible switching between the low- [AFM(I) and AFM(II)] and high-resistivity (FM) states.