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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Electron and hole mobility of rutile GeO 2 from first principles: An ultrawide-bandgap semiconductor for power electronics

Rutile germanium dioxide (r-GeO 2 ) is a recently predicted ultrawide-bandgap semiconductor with potential applications in high-power electronic devices, for which the carrier mobility is an important material parameter that controls the device efficiency. We apply first-principles calculations based on density functional and density functional perturbation theory to investigate carrier-phonon coupling in r-GeO 2 and predict its phonon-limited electron and hole mobilities as a function of temperature and crystallographic orientation. The calculated carrier mobilities at 300 K are μ elec , ⊥ c → = 244 cm 2 V –1 s –1 , μ elec , ∥ c → = 377 cm 2 V –1 s –1 , μ hole , ⊥ c → = 27 cm 2 V –1 s –1 , and μ hole , ∥ c → = 29 cm 2 V –1 s –1 . At room temperature, carrier scattering is dominated by the low-frequency polar-optical phonon modes. The predicted Baliga figure of merit of n -type r-GeO 2 surpasses several incumbent semiconductors such as Si, SiC, GaN, and β -Ga 2 O 3 , demonstrating its superior performance in high-power electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

In this study, the Raman biaxial stress coefficients K II and strain-free phonon frequencies ω 0 have been determined for the E 2 (low), E 2 (high), and A 1 (LO) phonon modes of aluminum nitride, AlN, using both experimental and theoretical approaches. The E 2 (high) mode of AlN is recommended for the residual stress analysis of AlN due to its high sensitivity and the largest signal-to-noise ratio among the studied modes. The E 2 (high) Raman biaxial stress coefficient of ₋3.8 cm₋1/GPa and strain-free phonon frequency of 656.68 cm ₋1 were then applied to perform both macroscopic and microscopic stress mappings. For macroscopic stress evaluation, the spatial variation of residual stress was measured across an AlN-on-Si wafer prepared by sputter deposition. A cross-wafer variation in residual stress of ~150 MPa was observed regardless of the average stress state of the film. Microscopic stress evaluation was performed on AlN piezoelectric micromachined ultrasonic transducers (pMUTs) with submicrometer spatial resolution. These measurements were used to assess the effect of device fabrication on residual stress distribution in an individual pMUT and the effect of residual stress on the resonance frequency. At ~20 μm directly outside the outer edge of the pMUT electrode, a large lateral spatial variation in residual stress of ~100 MPa was measured, highlighting the impact of metallization structures on residual stress in the AlN film.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Dynamics of photosynthetic light harvesting systems interacting with N-photon Fock states

Here, we develop a method to simulate the excitonic dynamics of realistic photosynthetic light harvesting systems, including non-Markovian coupling to phonon degrees of freedom, under excitation by N-photon Fock state pulses. This method combines the input–output and the hierarchical equations of motion formalisms into a double hierarchy of density matrix equations. We show analytically that under weak field excitation relevant to natural photosynthesis conditions, an N-photon Fock state input and a corresponding coherent state input give rise to equal density matrices in the excited manifold. However, an N-photon Fock state input induces no off-diagonal coherence between the ground and excited subspaces, in contrast with the coherences created by a coherent state input. We derive expressions for the probability to absorb a single Fock state photon with or without the influence of phonons. For short pulses (or, equivalently, wide bandwidth pulses), we show that the absorption probability has a universal behavior that depends only upon a system-dependent effective energy spread parameter Δ and an exciton–light coupling constant Γ. This holds for a broad range of chromophore systems and for a variety of pulse shapes. We also analyze the absorption probability in the opposite long pulse (narrow bandwidth) regime. We then derive an expression for the long time emission rate in the presence of phonons and use it to study the difference between collective vs independent emission. Finally, we present a numerical simulation for the LHCII monomer (14-mer) system under single photon excitation that illustrates the use of the double hierarchy equations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Cobalt as a promising dopant for producing semi-insulating β-Ga 2 O 3 crystals: Charge state transition levels from experiment and theory

Optical absorption and photoconductivity measurements of Co-doped β-Ga 2 O 3 crystals reveal the photon energies of optically excited charge transfer between the Co related deep levels and the conduction or valence band. The corresponding photoionization cross sections are fitted by a phenomenological model considering electron–phonon coupling. The obtained fitting parameters: thermal ionization (zero-phonon transition) energy, Franck–Condon shift, and effective phonon energy are compared with corresponding values predicted by first principle calculations based on density functional theory. A (+/0) donor level ~0.85 eV above the valence band maximum and a (0/-) acceptor level ~2.1 eV below the conduction band minimum are consistently derived. Temperature-dependent electrical resistivity measurement at elevated temperatures (up to 1000 K) yields a thermal activation energy of 2.1 ± 0.1 eV, consistent with the position of the Co acceptor level. Furthermore, the results show that Co doping is promising for producing semi-insulating β-Ga 2 O 3 crystals.

Materials science↗
DOE OSTI2023

Theoretical upper limits of the thermal conductivity of Si3N4

Silicon nitride (Si3N4) is a promising substrate for high-power electronics due to its superior mechanical properties and potential outstanding thermal conductivity (κ). As experiments keep pushing the upper limit of κ of Si3N4, it is believed that it can reach 450 W/mK, similar to SiC, based on classical models and molecular dynamics simulations. In this work, we reveal from first principles that the theoretical κ upper limits of β-Si3N4 are only 169 and 57 W/mK along the c and a axes at room temperature, respectively. Those of α-Si3N4 are about 116 and 87 W/mK, respectively. The predicted temperature-dependent κ matches well with the highest available experimental data, which supports the accuracy of our calculations, and suggests that the κ upper limit of Si3N4 has already been reached in the experiment. Compared to other promising semiconductors (e.g., SiC, AlN, and GaN), Si3N4 has a much lower κ than expected even though the chemical bonding and mechanical strengths are close or even stronger. We find the underlying reason is that Si3N4 has much lower phonon lifetimes and mean free paths (<0.5 μm) due to the larger three-phonon scattering phase space and stronger anharmonicity. Interestingly, we find that the larger unit cell (with more basis atoms) that leads to a smaller fraction of acoustic phonons is not the reason for lower κ. Grain size-dependent κ indicates that the grain boundary scattering plays a negligible role in most experimental samples. This work clarifies the theoretical κ upper limits of Si3N4 and can guide experimental research.

Physics↗
DOE OSTI2024

Carbon-related donor–acceptor pair transition in the infrared in h-BN

Experimental studies of intentionally doped impurities for the understanding of conductivity control in hexagonal boron nitride (h-BN) ultrawide bandgap (UWBG) semiconductor are limited but are highly desired for emerging applications of h-BN. We report synthesis by hydride vapor phase epitaxy and comparison photoluminescence (PL) emission spectroscopy studies of intentionally carbon (C)-doped and undoped h-BN semi-bulk crystals. In addition to the well-known C-related emission lines observed previously, a C-impurity-related transition near 1.31 eV consisting of multiple phonon replicas has been observed in C-doped h-BN at room temperature. Phonon replicas involved in the 1.31 eV emission have been identified using polarization resolve PL spectroscopy as the transverse acoustic (TA)/longitudinal acoustic (LA) and out-of-plane optical phonon (ZO) modes at the middle point, T, between the Γ- and K-points in the first Brillouin zone. Based on the agreement between the spectral peak position of the observed dominant emission line at 1.31 eV and the calculated energy-level separation between CB donor (carbon replacing boron) and Ci acceptor (carbon interstitial), the observed IR emission line can be decisively assigned to the donor–acceptor pair (DAP) transition involving the CB donor and Ci acceptor assisted by the intervalley (Κ → Μ) scattering processes. The results reinforce the perception that C impurities form deep-level centers and provided an improved understanding of C impurities in h-BN.

Physics↗
DOE OSTI2024

Fundamental optical transitions in hexagonal boron nitride epilayers

Fundamental optical transitions in hexagonal boron nitride (h-BN) epilayers grown on sapphire by metal–organic chemical vapor deposition (MOCVD) using triethylboron as the boron precursor have been probed by photoluminescence (PL) emission spectroscopy. The low temperature (10 K) PL spectrum exhibits two groups of emission lines. The first group includes the direct observation of the free exciton and impurity bound exciton (BX) transitions and phonon replicas of the BX transition, whereas the second group is attributed to the direct observation of the band-to-band transition and its associated phonon replicas. The observations of zero-phonon lines of the band-to-band and exciton transitions, which are supposedly forbidden or “dark” in perfect h-BN crystals, result from a relaxed requirement of momentum conservation due to symmetry-breaking in the presence of high concentrations of impurities/defects and strain, which in turn provided more deterministic values of the energy bandgap (E g ), exciton binding energy (E x ), and binding energy of impurity bound excitons (E BX ) in h-BN epilayers. Excitonic parameters of h-BN epilayers grown by MOCVD, carbon-free chemical vapor deposition, and high purity h-BN bulk materials are compared and discussed. The present results, together with available information in the literature, represent a significant improvement in the understanding of the fundamental optical properties and excitonic parameters of h-BN ultrawide bandgap semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ubiquitous coexisting electron-mode couplings in high-temperature cuprate superconductors

In conventional superconductors, electron-phonon coupling plays a dominant role in generating superconductivity. In high-temperature cuprate superconductors, the existence of electron coupling with phonons and other boson modes and its role in producing high-temperature superconductivity remain unclear. The evidence of electron-boson coupling mainly comes from angle-resolved photoemission (ARPES) observations of ~70-meV nodal dispersion kink and ~40-meV antinodal kink. However, the reported results are sporadic and the nature of the involved bosons is still under debate. Here we report findings of ubiquitous two coexisting electron-mode couplings in cuprate superconductors. By taking ultrahigh-resolution laser-based ARPES measurements, we found that the electrons are coupled simultaneously with two sharp modes at ~70meV and ~40meV in different superconductors with different dopings, over the entire momentum space and at different temperatures above and below the superconducting transition temperature. These observations favor phonons as the origin of the modes coupled with electrons and the observed electron-mode couplings are unusual because the associated energy scales do not exhibit an obvious energy shift across the superconducting transition. We further find that the well-known “peak-dip-hump” structure, which has long been considered a hallmark of superconductivity, is also omnipresent and consists of “peak-double dip-double hump” finer structures that originate from electron coupling with two sharp modes. These results provide a unified picture for the ~70-meV and ~40-meV energy scales and their evolutions with momentum, doping and temperature. In conclusion, they provide key information to understand the origin of these energy scales and their role in generating anomalous normal state and high-temperature superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Parameterizing empirical interatomic potentials for predicting thermophysical properties via an irreducible derivative approach: the case of ThO 2 and UO 2

The accuracy of classical physical property predictions using molecular dynamics simulations is determined by the quality of the interatomic potentials. Here we introduce a training approach for empirical interatomic potentials (EIPs) which is well suited for capturing phonons and phonon-related properties. Our approach is based on direct comparisons of the second- and third-order irreducible derivatives (IDs) between an EIP and the Born–Oppenheimer potential within density functional theory (DFT) calculations. IDs fully exploit space group symmetry and allow for training without redundant information. We demonstrate the fidelity of our approach in the context of ThO 2 and UO 2 , where we optimize parameters of an embedded-atom method potential in addition to core–shell interactions. Our EIPs provide thermophysical properties in good agreement with DFT and outperform widely utilized EIPs for phonon dispersion and thermal conductivity predictions. Reasonable estimates of thermal expansion and formation energies of Frenkel pairs are also obtained.

empirical interatomic potential↗
DOE OSTI2023

Discretized hexagonal boron nitride quantum emitters and their chemical interconversion

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are of significant interest because of their unique photophysical properties, such as single-photon emission at room temperature, and promising applications in quantum computing and communications. The photoemission from hBN defects covers a wide range of emission energies but identifying and modulating the properties of specific emitters remain challenging due to uncontrolled formation of hBN defects. In this study, more than 2000 spectra are collected consisting of single, isolated zero-phonon lines (ZPLs) between 1.59 and 2.25 eV from diverse sample types. Most of ZPLs are organized into seven discretized emission energies. All emitters exhibit a range of lifetimes from 1 to 6 ns, and phonon sidebands offset by the dominant lattice phonon in hBN near 1370 cm -1 . Two chemical processing schemes are developed based on water and boric acid etching that generate or preferentially interconvert specific emitters, respectively. The identification and chemical interconversion of these discretized emitters should significantly advance the understanding of solid-state chemistry and photophysics of hBN quantum emission.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Revealing symmetry-broken superconducting configurations by density functional theory

A coherent theory for the superconductivity of both conventional and unconventional superconductors is currently lacking. Here we show that superconductivity arises from the formation of a symmetry-broken superconducting configuration (SCC) due to atomic perturbation of the normal conducting configuration (NCC). This electron–phonon interaction creates straight one-dimensional tunnels (SODTs) for charge density of electrons and/or holes as revealed by the calculations based on density functional theory (DFT). The SODTs act as resistance-free superhighways and are correlated to the Cooper pairs in the Bardeen–Cooper–Schrieffer (BCS) theory. The formation of SODTs implies that the electron–phonon interaction in the BCS theory can be represented by the difference in charge densities between SCC and NCC predicted by DFT. The present work highlights that in conventional superconductors, SODTs are embedded within the bulk materials and are easily destroyed by phonon vibrations, resulting in a low critical superconducting temperature (T C ). Conversely, in unconventional superconductors such as YBa 2 Cu 3 O 7 (YBCO 7 ), SODTs are protected by a layered pontoon structure with very weak bonding to the bulk materials, maintaining SODTs’ stability at higher temperatures and leading to a much higher T C . The present approach is validated for 14 conventional superconductors of 18 pure elements and MgB 2 examined in this work, including the presently predicted superconductivity in Cu, Ag, Au, Sb, Bi, and MgB 2 at 0 K and 0 GPa, and one unconventional superconductor of YBCO 7 . Our discovery indicates that DFT can be a practical tool for predicting superconductors, enabling a systematic search for new superconducting materials in the future.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Transient gap generation in BaFe2As2 driven by coherent lattice vibrations

Abstract Iron-based superconductors provide a rich platform to investigate the interplay between unconventional superconductivity, nematicity, and magnetism. The electronic structure and the magnetic properties of iron-based superconductors are highly sensitive to the pnictogen height. Coherent excitation of the A1g phonon by femtosecond laser directly modulates the pnictogen height, which has been used to control the physical properties of iron-based superconductors. Previous studies show that the driven A1g phonon resulted in a transient increase of the pnictogen height in BaFe2As2, favoring an enhanced Fe magnetic moment. However, there are no direct observations on either the enhanced Fe magnetic moments or the enhanced spin-density wave (SDW) gap. Here, we use time-resolved broadband terahertz spectroscopy to investigate the dynamics of BaFe2As2 in the A1g phonon-driven state. Below the SDW transition temperature, we observe a transient gap generation at early-time delays. A similar transient feature is observed in the normal state up to room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Listening for new physics with quantum acoustics

We present a novel application of a qubit-coupled phonon detector to search for new physics, e.g., ultralight dark matter (DM) and high-frequency gravitational waves. The detector, motivated by recent advances in quantum acoustics, is composed of superconducting transmon qubits coupled to high-overtone bulk acoustic resonators (ℎ⁡BARs) and operates in the GHz−10 GHz frequency range. New physics can excite 𝒪⁡(10 μ⁢eV) phonons within the ℎ⁡BAR, which are then converted to qubit excitations via a transducer. We detail the design, operation, backgrounds, and expected sensitivity of a prototype detector, as well as a next-generation detector optimized for new physics signals. We find that a future detector can complement current haloscope experiments in the search for both dark photon DM and high-frequency gravitational waves. Lastly, we comment on such a detector’s ability to operate as a 𝒪⁡(10 μ⁢eV) athermal phonon sensor for sub-GeV DM detection.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

High-resolution spectroscopy of neutral Yb atoms in a solid Ne matrix

Here, we present an experimental and theoretical study of the absorption and emission spectra of Yb atoms in a solid Ne matrix at a resolution of 0.025 nm. Five absorption bands were identified as due to transitions from the 4 f 14 5 d 0 6 s 2 1 S 0 ground-state configuration to 4 f 14 5 d 0 6 s 6 p and 4 f 13 5 d 1 6 s 2 configurations. The two lowest-energy bands were assigned to outer-shell transitions to 6 s 6 p 3 P 1 and 1 P 1 atomic states and displayed the structure of a broad doublet and an asymmetric triplet, respectively. The remaining three higher-frequency bands were assigned to inner-shell transitions to distinct J = 1 states arising from the 4 f 13 5 d 1 6 s 2 configuration and were highly structured with narrow linewidths. A classical simulation was performed to identify the stability and symmetry of possible trapping sites in the Ne crystal. It showed that the overarching 1 + 2 structure of the high-frequency bands could be predominantly ascribed to crystal-field splitting in the axial field of a 10-atom vacancy of C 4 v symmetry. Their prominent substructures were shown to be manifestations of phonon sidebands associated with the zero-phonon lines on each crystal-field state. Unprecedented for a metal–rare-gas system, resolution of individual phonon states on an allowed electronic transition was possible under excitation spectroscopy which reflects the semiquantum nature of solid Ne. In contrast to the absorption spectra, emission spectra produced by steady-state excitation into the 1 P 1 absorption band consisted of simple, unstructured fluorescence bands.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

High-temperature superconductivity in LaH 10

The recent discovery of a high critical temperature $T_c$ in compressed H 3 S has been followed by the prediction of Liu et al. of $T_c$ ≈ 250 K in the clathrate LaH 10 structure. This report has been confirmed experimentally by Somayazulu et al. and Drozdov et al. Additional theoretical work by Wang et al. and Quan et al. further established the mechanism of electron-phonon interaction and the dominant role of hydrogen. In the present Rapid Communication we follow the classic McMillan paper, which separates the electron and phonon contributions to the electron-phonon coupling λ. We first compute the numerator of McMillan's expression, the Hopfield parameter η, using the theory of Gaspari and Gyorffy (GG), and obtain the force constants in the denominator from Wang et al. and Quan et al. The resulting λ is used in the Allen-Dynes equation to calculate $T_c$. The value of $T_c$ reaches a maximum in the range of 236–263 K at pressures of 255 GPa and decreases for smaller or larger pressures. Further, we provide a thorough analysis of the different terms of the GG equation and draw the conclusion that the $\textit{sp}$ channel of the hydrogen is the most important contribution to obtain high values of $T_c$ in this material. Consistent with Wang et al., we find large values of λ that decrease with increasing pressure. In addition, we find that the hydrogen sites are the largest contributors to the total value of the coupling constant λ. That is, the acoustic mode associated with La contributes only 2% to the total λ, while the optic modes associated with H contribute 18% for the H1 site and 80% for the H2 site. These relative contributions to λ are consistent with those given by Wang et al. and by Quan et al. Thus, our results strongly support the view that LaH 10 is a metallic hydrogen superconductor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Correlating structural, electronic, and magnetic properties of epitaxial VSe 2 thin films

The electronic and magnetic properties of transition metal dichalcogenides are known to be extremely sensitive to their structure. In this paper we study the effect of structure on the electronic and magnetic properties of mono- and bilayer VSe 2 films grown using molecular beam epitaxy. VSe 2 has recently attracted much attention due to reports of emergent ferromagnetism in the two-dimensional (2D) limit. To understand this compound, high-quality 1$\textit{T}$ and distorted 1$\textit{T}$ films were grown at temperatures of 200 °C and 450 °C, respectively, and studied using 4 K scanning tunneling microscopy and spectroscopy. The measured density of states and the charge density wave (CDW) patterns were compared to band structure and phonon dispersion calculations. Films in the 1$\textit{T}$ phase reveal different CDW patterns in the first layer compared to the second. Interestingly, we find the second layer of the 1$\textit{T}$ film shows a CDW pattern with 4$\textit{a}$ × 4$\textit{a}$ periodicity which is the 2D version of the bulk CDW observed in this compound. We report our phonon dispersion calculations confirm the presence of a soft phonon at the correct wave vector that leads to this CDW. In contrast, the first layer of distorted 1$\textit{T}$ phase films shows a strong stripe feature with varying periodicities, while the second layer displays no observable CDW pattern. Finally, we find that the monolayer 1$\textit{T}$ VSe 2 film is weakly ferromagnetic, with ~3.5 $μ_B$ per unit similar to previous reports.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Origin of the anomalously low Raman exponents in single molecule magnets

The Raman exponent of single molecular magnetic relaxation may take various unexpected values because of rich phonon spectra and spin-phonon coupling of molecular crystals. Here, we systematically examine the origins of different abnormalities and clarify misunderstandings of the past, particularly the appropriateness of the fitting procedures for the exponents. We find that exponential laws raised by optical phonons can yield spurious power laws with low exponents. This observation indicates long-standing misunderstandings of the origins of low Raman exponents in a large bulk of single molecule magnets. Resulting from spin-lattice coupling with optical modes, the presence of these exponents suggests the importance of the local dynamical environment for the magnetic relaxation in this regime.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Many-body Green's function approaches to the doped Fröhlich solid: Exact solutions and anomalous mass enhancement

In polar semiconductors and insulators, the Fröhlich interaction between electrons and long-wavelength longitudinal optical phonons induces a many-body renormalization of the carrier effective masses and the appearance of characteristic phonon sidebands in the spectral function, commonly dubbed “polaron satellites.” The simplest model that captures these effects is the Fröhlich model, whereby electrons in a parabolic band interact with a dispersionless longitudinal optical phonon. The Fröhlich model has been employed in a number of seminal papers, from early perturbation-theory approaches to modern diagrammatic Monte Carlo calculations. One limitation of this model is that it focuses on undoped systems, thus ignoring carrier screening and Pauli blocking effects that are present in real experiments on doped samples. Here, to overcome this limitation, we extend the Fröhlich model to the case of doped systems, and we provide exact solutions for the electron spectral function, mass enhancement, and polaron satellites. We perform the analysis using two approaches, namely, Dyson’s equation with the Fan-Migdal self-energy, and the second-order cumulant expansion. We find that these two approaches provide qualitatively different results. In particular, Dyson’s approach yields better quasiparticle masses and worse satellites, while the cumulant approach provides better satellite structures, at the price of worse quasiparticle masses. Both approaches yield an anomalous enhancement of the electron effective mass at finite doping levels, which in turn leads to a breakdown of the quasiparticle picture in a significant portion of the phase diagram.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗