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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

The NASA Electronic Parts and Packaging (NEPP) Program: Insertion of New Electronics Technologies

This viewgraph presentation gives an overview of NASA Electronic Parts and Packaging (NEPP) Program's new electronics technology trends. The topics include: 1) The Changing World of Radiation Testing of Memories; 2) Even Application-Specific Tests are Costly!; 3) Hypothetical New Technology Part Qualification Cost; 4) Where we are; 5) Approaching FPGAs as a More Than a "Part" for Reliability; 6) FPGAs Beget Novel Radiation Test Setups; 7) Understanding the Complex Radiation Data; 8) Tracking Packaging Complexity and Reliability for FPGAs; 9) Devices Supporting the FPGA Need to be Considered; 10) Summary of the New Electronic Technologies and Insertion into Flight Programs Workshop; and 11) Highlights of Panel Notes and Comments

LaBel, Kenneth A.↗
NASA NTRS2000

Hierarchical Statistical 3D ' Atomistic' Simulation of Decanano MOSFETs: Drift-Diffusion, Hydrodynamic and Quantum Mechanical Approaches

When MOSFETs are scaled to deep submicron dimensions the discreteness and randomness of the dopant charges in the channel region introduces significant fluctuations in the device characteristics. This effect, predicted 20 year ago, has been confirmed experimentally and in simulation studies. The impact of the fluctuations on the functionality, yield, and reliability of the corresponding systems shifts the paradigm of the numerical device simulation. It becomes insufficient to simulate only one device representing one macroscopical design in a continuous charge approximation. An ensemble of macroscopically identical but microscopically different devices has to be characterized by simulation of statistically significant samples. The aims of the numerical simulations shift from predicting the characteristics of a single device with continuous doping towards estimating the mean values and the standard deviations of basic design parameters such as threshold voltage, subthreshold slope, transconductance, drive current, etc. for the whole ensemble of 'atomistically' different devices in the system. It has to be pointed out that even the mean values obtained from 'atomistic' simulations are not identical to the values obtained from continuous doping simulations. In this paper we present a hierarchical approach to the 'atomistic' simulation of aggressively scaled decanano MOSFETs. A full scale 3D drift-diffusion'atomostic' simulation approach is first described and used for verification of the more economical, but also more restricted, options. To reduce the processor time and memory requirements at high drain voltage we have developed a self-consistent option based on a thin slab solution of the current continuity equation only in the channel region. This is coupled to the Poisson's equation solution in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison with the full self-consistent solution. At low drain voltage only single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. A pilot version of a hydrodynamic 'atomistic' simulator has been developed in order to study the effect of the nonequilibrium, non local transport in decanano MOSFETs on the random dopant induced current fluctuations. For the first time we have also applied the density gradient approach in 3D to investigate the effect of the quantum confinement on the threshold voltage fluctuations. The developed 'atomistic' simulation techniques have been applied to study various fluctuation resistant MOSFET architectures including epitaxial and delta doped devices.

Asenov, Asen↗
DOE OSTI2024

Multivariable degradation modeling and life prediction using multivariate fractional Brownian motion

In system prognostics and health management, multivariable degradation models have been widely developed to predict the life of complex systems using degradation data of multiple Performance Characteristics (PCs). Recent studies have detected a Long-Term Memory (LTM) effect among the degradation process of various PCs, implying a strong coupling phenomenon between the future degradation behavior and historical degradation trajectory. Although the LTM has been widely integrated into single-PC-based degradation modeling, it has not been considered in multi-PC-based scenarios. To capture LTM among multiple PCs, this article proposes a novel LTM-integrated Multivariate Degradation Model (MDM) for system life prediction based on multivariate fractional Brownian motion, which simultaneously incorporates the cross-correlation among different PCs. To estimate parameters of the LTM-integrated MDM, a maximum likelihood method is developed. Here, two likelihood-ratio hypothesis tests are developed to test the existence of the overall and individual LTM effect among multiple PCs. Both simulation studies and physical experiments on the performance degradation of solar energy conversion and storage devices are conducted to validate the proposed model. Results reveal that the proposed LTM-integrated MDM significantly outperforms existing MDMs in life prediction, while the lifetime uncertainty is heavily underestimated by those traditional approaches that neglect the LTM.

42 ENGINEERING↗
DOE OSTI2022

Phoebe: a high-performance framework for solving phonon and electron Boltzmann transport equations

Understanding the electrical and thermal transport properties of materials is critical to the design of electronics, sensors, and energy conversion devices. Computational modeling can accurately predict material properties but, in order to be reliable, requires accurate descriptions of electron and phonon states and their interactions. While first-principles methods are capable of describing the energy spectrum of each carrier, using them to compute transport properties is still a formidable task, both computationally demanding and memory intensive, requiring integration of fine microscopic scattering details for estimation of macroscopic transport properties. To address this challenge, we present Phoebe—a newly developed software package that includes the effects of electron–phonon, phonon–phonon, boundary, and isotope scattering in computations of electrical and thermal transport properties of materials with a variety of available methods and approximations. This open source C++ code combines MPI-OpenMP hybrid parallelization with GPU acceleration and distributed memory structures to manage computational cost, allowing Phoebe to effectively take advantage of contemporary computing infrastructures. We demonstrate that Phoebe accurately and efficiently predicts a wide range of transport properties, opening avenues for accelerated computational analysis of complex crystals.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Research principles and the construction of mnemonic diagrams

Mnemonic diagrams are defined as a variety of information display devices, the essential element of which is conventional graphical presentation of technological or functional-operational links in a controlled system or object. Graphically displaying the operational structure of an object, the interd dependence between different parameters, and the interdependence between indicators and control organs, the mneomonic diagram reduces the load on the operator's memory and facilitates perception and reprocessing of information and decision making, while at the same time playing the role of visual support to the information activity of the operator. The types of mnemonic diagrams are listed.

Venda, V. F.↗
NASA NTRS1993

RAID 7 disk array

Each RAID level reflects a different design architecture. Associated with each is a backdrop of imposed limitations, as well as possibilities which may be exploited within the architectural constraints of that level. There are three unique features that differentiate RAID 7 from all other levels. RAID 7 is asynchronous with respect to usage of I/O data paths. Each I/O drive (includes all data and one parity drives) as well as each host interface (there may be multiple host interfaces) has independent control and data paths. This means that each can be accessed completely, independently, of the other. This is facilitated by a separate device cache for each device/interface as well. RAID 7 is asynchronous with respect to device hierarchy and data bus utilization. Each drive and each interface is connected to a high speed data bus controlled by the embedded operating system to make independent transfers to and from central cache. RAID 7 is asynchronous with respect to the operation of an embedded real time process oriented operating system. This means that exclusive and independent of the host, or multiple host paths, the embedded OS manages all I/O transfers asynchronously across the data and parity drives. A key factor to consider is that of the RAID 7's ability to anticipate and match host I/O usage patterns. This yields the following benefits over RAID's built around micro-code based architectures. RAID 7 appears to the host as a normally connected Big Fast Disk (BFD). RAID 7 appears, from the perspective of the individual disk devices, to minimize the total number of accesses and optimize read/write transfer requests. RAID 7 smoothly integrates the random demands of independent users with the principles of spatial and temporal locality. This optimizes small, large, and time sequenced I/O requests which results in users having an I/O performance which approaches performance to that of main memory.

Stout, Lloyd↗
NASA NTRS1993

Multiple degree of freedom force-state component identification

Force-state mapping is extended to allow the quasistatic characterization of realistic multiple degree of freedom systems whose constitutive relations are nonlinear, dissipative, coupled and depend on memory of past states. A general constitutive force-state model is formulated, which includes dynamic hysteresis phenomena typical of that found in deployable structures. A two step parameter identification approach is developed, which employs a linear extended Kalman filter and a nonlinear least squares fit. A six degree of freedom force-state testing device was constructed, and used to obtain data on one bay of a simple truss and on one bay of the MODE deployable truss.

Masters, Brett P.↗
DOE OSTI2021

Ferroelectric polarization retention with scaling of Hf 0.5 Zr 0.5 O 2 on silicon

In this paper, we investigate the polarization retention of Hf 0.5 Zr 0.5 O 2 (HZO)-based metal–ferroelectric–insulator–Si (MFIS) capacitors with scaling of the ferroelectric (FE) layer thickness from 5 nm to 20 nm. The capacitors have a constant interface layer capacitance of ~24 μF/cm 2 , developed due to the integration of HZO on a degenerated Si as a bottom conducting electrode. It is observed that 20 nm HZO films show a small change (~5%) in FE polarization (P FE ) between short (10 μs) and long (6 s) retention time, while 5-nm-thick films exhibit a large difference (~90%). Furthermore, the dependence of P FE retention loss on the FE thickness can be understood by the presence of a built-in electric field in the FE layer, generated due to charge continuity between the FE and the interface layers in the ground state without any external bias. A direct experimental observation also confirms that a residual voltage is developed at the node between the metal–ferroelectric–metal and metal–oxide–semiconductor capacitors connected in series, in the ground state with zero external bias. It is expected that a proper understanding of the built-in field developed in the FE layer in an MFIS stack is crucial for FE memory retention characteristics.

36 MATERIALS SCIENCE↗
NASA NTRS2012

Programmatic Impact of SDRAM SEFI

The Elpida EDS5104(08)ABTA 512Mb SDRAM is examined for programmatic impact of SEE. Use cases for the devices including EDAC and mode register reload are examined. Results indicate some SEE mitigation methods require careful application to achieve system-level benefits, while some event types are essentially mitigated by the application use. In the studied devices MBE and SEFI are identified and investigated as mechanisms requiring special consideration.

Single Event Functionality Interrupt (SEFI)↗
NASA NTRS1991

Design of a Shape Memory Alloy deployment hinge for reflector facets

A design concept for a Shape Memory Alloy (SMA) actuated hinge mechanism for deploying segmented facet-type reflector surfaces on antenna truss structures is presented. The mechanism uses nitinol, a nickel-titanium shape memory alloy, as a displacement-force micro-actuator. An electrical current is used to resistively heat a 'plastically' elongated SMA actuator wire, causing it to contract in response to a thermally-induced phase transformation. The resulting tension creates a moment, imparting rotary motion between two adjacent panels. Mechanical stops are designed into the device to limit its range of motion and to establish positioning accuracy at the termination of deployment. The concept and its operation are discussed in detail, and an analytical dynamic simulation model is presented. The model has been used to perform nondimensionalized parametric design studies.

Anders, W. S.↗
DOE OSTI2020

Efficient Treatment of Large Active Spaces through Multi-GPU Parallel Implementation of Direct Configuration Interaction

In this study, we have extended our graphical processing unit (GPU)-accelerated direct configuration interaction program to multiple devices, reducing iteration times for configuration spaces of 165 million determinants to only 3 s using NVIDIA P100 GPUs. Similar improvements in the one- and two-particle reduced density matrix formation allow for fast analytical energy gradients and electronic properties. Our parallel algorithm enables the calculation of arbitrarily large configuration spaces (limited only by available system memory), with iteration times of 13 min for an active space of 18 electrons in 18 orbitals (2.4 billion determinants) using six consumer grade NVIDIA 1080Ti GPUs. These advances enable routine molecular dynamics simulations, geometry optimizations, and absorption spectrum calculations for molecules with large configuration spaces, a task that has heretofore required massive computational effort. In this work, we demonstrate the utility of our program by generating the absorption spectrum for diphenyl acetylene at the floating occupation molecular orbital complete active space configuration interaction level of theory. Lastly, several active spaces were investigated to assess the dependence of spectral features on orbital space dimension.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2005

Transition Report for Dr. Ken Fernandez, NASA Marshall Space Flight Center

The primary objective proposed during my tenure with the NASA Administrator's Fellowship Program (NAFP) was the use of ROBOSIM, a NASA developed robot simulation software package, to introduce the first robotics class to the School of Engineering at Alabama A&M University. The students participating in the spring of 2004 chose as their class project a simulation of the Shuttle, the Shuttle Remote Manipulator System, and the inspection boom which may be used to inspect the Shuttle's tiles on-orbit. In addition to meeting this primary objective and fulfilling other activities that were required by NAFP participants, several other accomplishments are reported. Participation with the faculty of Alabama A&M in the planning and execution of the First and Second Annual Michael P. Anderson Memorial Summer Programs for minority high school students was completed. This program, funded by NASA, provided supervised "hands- on" group activities in various engineering disciplines, including robotics. A third major accomplishment during the NAFP tenure was the granting of a U.S. patent for the NASA 3-D Luggage Scanning System. International patents are also pending on this device. The device uses stereographic imaging similar to that used by NASA on the Mars Rover to enhance the contents of luggage and other items being inspected. It is believed that this device can greatly improve the efficiency and accuracy of security checkpoint screening.

Fernandez, Ken R.↗
NASA NTRS2009

Got Mercury?

Many of the operational and payload lighting units used in various spacecraft contain elemental mercury. If these devices were damaged on-orbit, elemental mercury could be released into the cabin. Although there are plans to replace operational units with alternate light sources, such as LEDs, that do not contain mercury, mercury-containing lamps efficiently produce high quality illumination and may never be completely replaced on orbit. Therefore, exposure to elemental mercury during spaceflight will remain possible and represents a toxicological hazard. Elemental mercury is a liquid metal that vaporizes slowly at room temperature. However, it may be completely vaporized at the elevated operating temperatures of lamps. Although liquid mercury is not readily absorbed through the skin or digestive tract, mercury vapors are efficiently absorbed through the respiratory tract. Therefore, the amount of mercury in the vapor form must be estimated. For mercury releases from lamps that are not being operated, we utilized a study conducted by the New Jersey Department of Environmental Quality to calculate the amount of mercury vapor expected to form over a 2-week period. For longer missions and for mercury releases occurring when lamps are operating, we conservatively assumed complete volatilization of the available mercury. Because current spacecraft environmental control systems are unable to remove mercury vapors, both short-term and long-term exposures to mercury vapors are possible. Acute exposure to high concentrations of mercury vapors can cause irritation of the respiratory tract and behavioral symptoms, such as irritability and hyperactivity. Chronic exposure can result in damage to the nervous system (tremors, memory loss, insomnia, etc.) and kidneys (proteinurea). Therefore, the JSC Toxicology Group recommends that stringent safety controls and verifications (vibrational testing, etc.) be applied to any hardware that contains elemental mercury that could yield airborne mercury vapor concentrations greater than 0.1 mg/cu m in the total spacecraft atmosphere for exposures lasting 30 days or less or 0.01 mg/cu m mercury vapor for exposures lasting more than 30 days. We also encourage the use of alternative devices that do not contain mercury.

Meyers, Valerie E.↗
DOE OSTI2022

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. In this report we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a two-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3% with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Analysis and mitigation of parasitic resistance effects for analog in-memory neural network acceleration

To support the increasing demands for efficient deep neural network processing, accelerators based on analog in-memory computation of matrix multiplication have recently gained significant attention for reducing the energy of neural network inference. However, analog processing within memory arrays must contend with the issue of parasitic voltage drops across the metal interconnects, which distort the results of the computation and limit the array size. This work analyzes how parasitic resistance affects the end-to-end inference accuracy of state-of-the-art convolutional neural networks, and comprehensively studies how various design decisions at the device, circuit, architecture, and algorithm levels affect the system's sensitivity to parasitic resistance effects. Here, a set of guidelines are provided for how to design analog accelerator hardware that is intrinsically robust to parasitic resistance, without any explicit compensation or re-training of the network parameters.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1985

Method and apparatus for I-V data acquisition from solar cells

A method and apparatus for logging current-voltage (I-V) characteristic d of a solar cell module (10) in two modes using a portable instrument. One mode controls the load current through a circuit (36) in 256 equal intervals while voltage is measured from open circuit to at least halfway into the knee of the curve and the other mode controls the load voltage through a circuit (34) in 256 equal intervals from the lowest voltage measurement possible (short circuit) to at least halfway into the knee of the curve, under control of a microcomputer (12). All measurements are packed by discarding each measurement that is within 0.5% of the value predicted from two previous measurements, except every ninth (9th) measurement which is retained. The remaining data is further packed into a memory block of a detachable storage medium (14) by recording the data points in sequence following a header containing data common to all points, with each point having the value of the controlled parameter recorded as the number of increments from the previous point recorded followed by the measured value. The detachable storage medium is preferably a solid state device for reliability, and is transferable to a playback terminal which unpacks the data for analysis and display.

Cole, Steven W.↗
NASA NTRS1974

Design, processing, and testing of LSI arrays for space station

The development of a beam-leaded low power, high performance metal-oxide-semiconductor (MOS), 256-bit random access memory (RAM) was reported. Previous success with the aluminum-gate current-sense version and a silicon-gate voltage-sense version led to the present effort to make a beam-leaded silicon-gate RAM. Some problems unique to the silicon-on-sapphire beam-lead process development are presented. Beam-leaded SOS TA5388 devices using a Si3N4 passivation layer were shown to have good electrical parameters.

Schneider, W. C.↗
NASA NTRS1978

A design for a 1984 Mars rover

A Mars rover is planned for the mid-1980's as a follow-up to the Viking program, and as a prelude to a return-to-earth mission of Martian samples in the late eighties or early nineties. An overall view of the rover's configuration is presented with a summary of basic design parameters. Six subsystems are outlined: computing, with a 10 to the 8th bit bubble memory; mobility, designed for a journey of 100 km in 2 earth years; science sample acquisition, including a soil auger and hard rock drill; power, supplied by an RTG and stored in batteries; telecommunication, with 50 K bit UHF transmission relayed through an orbiter; and visual imaging, employing two television cameras, each with an 800 x 800 pixel charge coupled device. Scientific research goals include information about Martian seismic characteristics, magnetic field, surface heat flow, chemical composition, geology along a transverse, and meteorology. Attention is given to the necessity of rover autonomy from earth commands.

Dobrotin, B. M.↗