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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Impact of primer dimers and self-amplifying hairpins on reverse transcription loop-mediated isothermal amplification detection of viral RNA

Loop-mediated isothermal amplification (LAMP), coupled with reverse transcription (RT), has become a popular technique for detection of viral RNA due to several desirable characteristics for use in point-of-care or low-resource settings. The large number of primers in LAMP (six per target) leads to an increased likelihood of primer-dimer interactions, and the inner primers in particular are prone to formation of stable hairpin structures due to their length (typically 40-45 bases). Although primer-dimers and hairpin structures are known features to avoid in nucleic acid amplification techniques, there is little quantitative information in literature regarding the impact of these structures on LAMP or RT-LAMP assays. In this study, we examine the impact of primer-dimers and hairpins on previously-published primer sets for dengue virus and yellow fever virus. We demonstrate that minor changes to the primers to eliminate amplifiable primer dimers and hairpins improves the performance of the assays when monitored in real time with intercalating dyes, and when monitoring a fluorescent endpoint using the QUASR technique. We also discuss the thermodynamic implications of these minor changes on the overall stability of amplifiable secondary structures, and we present a single thermodynamic parameter to predict the probability of non-specific amplification associated with LAMP primers.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2018

Room-temperature fabrication of a delafossite CuCrO 2 hole transport layer for perovskite solar cells

Delafossite oxides are promising hole transport layer (HTL) candidates for perovskite solar cells, due to their wide band gap, favorable energy band alignment relative to the perovskite absorber and simplicity of processing. In this paper, we investigate the properties of CuCrO2 (CCO) delafossite films using an integration of experimental and computational techniques. Phase-pure CCO films are deposited at room temperature by spin-casting suspensions of hydrothermally-synthesized nanoparticles, for use in a glass/ITO/CCO/CH3NH3PbI3/C60/BCP/Ag device structure. Although density functional theory (DFT) calculations predict an elevated hole effective mass along certain crystallographic directions, the nearly isotropic shape and small size of the CCO nanoparticles preserves transport properties within the films by randomizing particle orientation, preventing these unfavorable directions from dominating the film conductivity. Experimental measurements confirm that the CCO films display appropriate optical and electrical properties for use as an HTL, in good agreement with the DFT calculations. Solar cells made using these films exhibit stabilized power conversion efficiencies exceeding 14%, with only minor hysteresis in the current–voltage characteristics.

Dunlap-Shohl, Wiley A.↗
DOE OSTI2020

Safety issues of defective lithium-ion batteries: identification and risk evaluation

Lithium-ion batteries inevitably suffer minor damage or defects caused by external mechanical abusive loading, e.g. , penetration, deformation, and scratch without triggering a hard/major short circuit. The replacement of cells becomes a dilemma if the safety risk of the defective batteries remains unknown. Herein, by introducing a representative defect form, i.e. , screw indentation, we demonstrate the safety characteristics of defective batteries. We prove that defective batteries have a significantly increased thermal risk and deteriorated mechanical integrity, but can go undetected due to prompt voltage recovery and insignificant local temperature increase. We discover that the voltage curve within the first few cycles contains sufficient information to identify defective batteries from otherwise good ones and propose methodologies to monitor the cells. Capacity loss and current leakage are two characteristics that can be estimated using the voltage curve. According to the defect size and position, the capacity loss could be 1 to 10 2 mA h and the leakage current could be 5–50 mA. Results remove the barriers for defective battery safety risk evaluation, enabling identification, monitoring, and early warning of minor damaged batteries.

25 ENERGY STORAGE↗
DOE OSTI2021

Atomic structure of light-induced efficiency-degrading defects in boron-doped Czochralski silicon solar cells

Boron-doped Czochralski (Cz) Si is the most commonly used semiconductor in the fabrication of solar cells. The minority carrier lifetime of boron-doped Cz Si decreases upon exposure to light due to B–O-related defects, which reduce the performance of ~10 9 solar modules worldwide. Using electron paramagnetic resonance (EPR), we have identified the spin-active paramagnetic signatures of this phenomenon and gained insights into its microscopic mechanism. We found a distinct defect signature, which diminished when the degraded sample was annealed. The second signature, a broad magnetic field spectrum, due to the unionized B acceptors, was present in the annealed state but vanished upon light exposure. These observations show that, on degradation, nearly all the ~10 16 cm –3 B atoms in Cz Si complexed with interstitial O atoms, whereas only ~10 12 cm –3 of these complexes created defects that were recombination-active. The formation rate of these recombination-active defects correlated with the decay of the minority carrier lifetime. Furthermore, the line shape parameters linked these defects to both B and O impurities in Cz Si.

14 SOLAR ENERGY↗
DOE OSTI2023

Alkali element (Li, Na, K, and Rb) doping of Cu 2 BaGe 1– x Sn x Se 4 films

Cu 2 BaGe 1–x Sn x Se 4 (CBGTSe) represents an exemplary system within the I 2 –II–IV–X 4 (I = Ag, Cu; II = Sr, Ba; IV = Ge, Sn; X = S, Se) family, which has been introduced to target suppressing the formation of anti-site defects and associated defect clusters within the analogous kesterite Cu 2 ZnSn(S,Se) 4 . Previous studies on CBGTSe films showed relatively low hole carrier densities (<10 13 cm –3 ), which may limit their corresponding application as active layers within photovoltaic, thermoelectric, and optoelectronic devices. In the current study, we explore the incorporation of alkali elements (Li, Na, K, and Rb) into CBGTSe films as prospective dopants to address the low hole carrier density and to allow for property tunability. First, incorporation of Na-, K-, and Rb-dopants noticeably increases the average grain sizes for CBGTSe films, while the Li-dopant has relatively limited impact. In addition, the alkali-dopants lead to a 1 to 3 orders of magnitude increase in hole carrier density (up to 10 15 cm –3 is achieved using K doping, corresponding to the alkali element yielding the highest doping efficiency). Here, the alkali-doped films show slightly lower minority carrier lifetimes and carrier mobility values than the non-doped samples, and these values are found to follow an approximate universal dependence with carrier density (also considering data derived from other previously explored vacuum-deposited I 2 –II–IV–X 4 chalcogenide films). As alkali-doping can significantly increase carrier densities, alkali elements can be considered useful p-type dopants for CBGTSe, as well as prospectively for other analogous I 2 –II–IV–X 4 systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Single particle – MC-ICP-MS for isotopic analysis of uranium particles

Single particle – multi-collector – inductively coupled plasma – mass spectrometry (SP-MC-ICP-MS) was employed to measure a suspension of 1 µm U3O8 particles (∼1.3 pg total U/particle) to determine their individual isotopic compositions of 234U/238U, 235U/238U, and 236U/238U. The effects of different detector combinations for 235U and 238U, including secondary electron multipliers (SEM) and Faraday detectors (1011 and 1013 Ω amplifiers), were explored for accuracy and precision optimization on the observed 235U/238U. The minor isotopic ratios (i.e., 234U/238U and 236U/238U) were analyzed such that the 234U and 236U were monitored on SEM detectors and the 238U was monitored on a Faraday (1011 Ω) detector. Various integration times (5, 10, 25, and 50 ms) were investigated in all detector configurations to gain a better understanding of their impact on sensitivity, accuracy, and precision. For 235U/238U ratios of 1 µm U3O8 particles, a dual Faraday detector measurement with 1011 Ω was the optimal choice; measurement of 1021 particles yielded an average 235U/238U ratio of 0.00170 (14), a −1.8% relative difference (% RD) from the reference value. The minor isotopic compositions were determined to be 0.0000070 (14) and 0.0000758 (48) for the 234U/238U and 236U/238U, respectively. These measurements correspond to <8% and <1% RD from their reference value for the 234U/238U and 236U/238U, respectively. SP-MC-ICP-MS was also able to provide insight into measurement sensitivity. In these individual particles, merely 15 and 165 atto-grams (ag) of 234U and 236U were present (calculated). Initial limits of detection for SP-MC-ICP-MS were determined to be ∼1.0 ag (when measured via SEM detectors). This valuable approach is applicable to areas including nuclear forensics, nuclear safeguards, and geochemical analysis, which require high-precision measurements of uranium within micron-sized particles.

Manard, Benjamin [ORNL] (ORCID:0000000207400627)↗
DOE OSTI2015

Unprecedented study of the broadband emission of Mrk 421 during flaring activity in March 2010

Because of its proximity, Mrk 421 is one of the best sources on which to study the nature of BL Lac objects. Its proximity allows us to characterize its broadband spectral energy distribution (SED). Here, the goal is to better understand the mechanisms responsible for the broadband emission and the temporal evolution of Mrk 421. These mechanisms may also apply to more distant blazars that cannot be studied with the same level of detail. A flare occurring in March 2010 was observed for 13 consecutive days (from MJD 55 265 to MJD 55 277) with unprecedented wavelength coverage from radio to very high energy (VHE; E> 100 GeV) γ-rays with MAGIC, VERITAS, Whipple , Fermi -LAT, MAXI, RXTE, Swift , GASP-WEBT, and several optical and radio telescopes. We modeled the day-scale SEDs with one-zone and two-zone synchrotron self-Compton (SSC) models, investigated the physical parameters, and evaluated whether the observed broadband SED variability can be associated with variations in the relativistic particle population. As a result, the activity of Mrk 421 initially was high and then slowly decreased during the 13-day period. The flux variability was remarkable at the X-ray and VHE bands, but it was minor or not significant at the other bands. The variability in optical polarization was also minor. These observations revealed an almost linear correlation between the X-ray flux at the 2–10 keV band and the VHE γ-ray flux above 200 GeV, consistent with the γ-rays being produced by inverse-Compton scattering in the Klein-Nishina regime in the framework of SSC models. The one-zone SSC model can describe the SED of each day for the 13 consecutive days reasonably well, which once more shows the success of this standard theoretical scenario to describe the SEDs of VHE BL Lacs such as Mrk 421. This flaring activity is also very well described by a two-zone SSC model, where one zone is responsible for the quiescent emission, while the other smaller zone, which is spatially separated from the first, contributes to the daily variable emission occurring at X-rays and VHE γ-rays. The second blob is assumed to have a smaller volume and a narrow electron energy distribution with 3 × 104<γ< 6 × 105, where γ is the Lorentz factor of the electrons. Such a two-zone scenario would naturally lead to the correlated variability at the X-ray and VHE bands without variability at the optical/UV band, as well as to shorter timescales for the variability at the X-ray and VHE bands with respect to the variability at the other bands. In conclusion, both the one-zone and the two-zone SSC models can describe the daily SEDs via the variation of only four or five model parameters, under the hypothesis that the variability is associated mostly with the underlying particle population. This shows that the particle acceleration and cooling mechanism that produces the radiating particles might be the main mechanism responsible for the broadband SED variations during the flaring episodes in blazars. The two-zone SSC model provides a better agreement with the observed SED at the narrow peaks of the low- and high-energy bumps during the highest activity, although the reported one-zone SSC model could be further improved by varying the parameters related to the emitting region itself (δ, B and R), in addition to the parameters related to the particle population.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2026

Preliminary Result of Neoclassical Impurity Transport Affected by ICRH with a 4-D Fokker-Planck Code

To understand the role of ion cyclotron resonance heating (ICRH) in mitigating tungsten accumulation, we evaluate the impact of ICRH-induced poloidal asymmetries on neoclassical impurity transport using a newly developed 4-D Fokker–Planck code (FP4D). Unlike conventional approaches that separate RF heating and transport modelling, FP4D solves both fast-ion distribution formation and impurity transport self-consistently without bounce-averaging. Benchmarking against the NEO code confirms the accuracy of the neoclassical physics in FP4D. Using FP4D, we analyze anisotropic and non-Maxwellian minority distributions under ICRH and their effects on the equilibrium potential and tungsten transport. Results show that anisotropy induced poloidal potential variations can reduce inward tungsten flux, depending on the modelling approach. Our findings highlight the importance of resolving the full velocity and poloidal structure of minority species in predicting impurity transport under strong RF heating conditions.

Jeong, Yunho [Hanyang Univ., Seoul (Korea, Republi↗
DOE OSTI2026

Overview of the ICRF heating system in SPARC

Ion Cyclotron Range of Frequencies (ICRF) heating is a critical system for the SPARC mission of demonstrating net positive fusion gain. In the first campaign, 20 MW of installed power at 120 MHz will be supplied to 10 four-strap antennas, arranged in poloidal pairs. The matching network is designed to accommodate for a range of loading conditions and a fast controller adjusts the matching during a pulse with frequency modulation of ±1 MHz. For the main L-mode scenario of the first experimental campaign, the power coupling and absorption is analysed in this work. Several feeding schemes are compared and limits on the amount of the total coupled power are evaluated. Coupling of the full 20 MW power is possible well within the limit of the peak electric field in the transmission line of 15 kV/cm. The 3 He minority and 2 nd harmonic T heating scheme is validated in full-wave modelling to be efficient for heating plasma in the SPARC L-mode Q>1 scenario, with dominant ion heating and efficient single-pass absorption. A range of ICRF wave parameters and minority concentration would be suitable for operation and allow tailoring the heating properties for plasma conditions and experimental objectives.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2011

Effects of irradiation and annealing on deep levels in rhodium-doped p-GaAs grown by metal-organic chemical-vapor deposition

This paper reports a detailed study of the effects of irradiation and thermal annealing on deep levels in Rh-doped p-type GaAs grown by low-pressure metal-organic chemical-vapor deposition, using deep level transient spectroscopy (DLTS) technique. It is found upon irradiation with alpha particles that, in addition to the radiation-induced defect peaks, all the Rh-related peaks observed in majority, as well as minority-carrier emission DLTS scans show an increase in their respective concentrations. The usually observed {alpha}-induced defects H{alpha}1, H{alpha}2, and H{alpha}3 are found to have lower introduction rates in Rh-doped samples, as compared to reference samples (not doped with Rh). Alpha-irradiation has been found to decompose the two minority carrier emitting bands (one at low temperature {approx}150 K and the other at {approx}380 K) observed prior to irradiation into distinct peaks corresponding to deep levels Rh1 and Rh2 and EL2 and Rh3, respectively. A similar effect is also observed for the majority-carrier emitting band composed of hole emission from deep levels RhA and RhB, which separate out well upon irradiation. Further, from the double-correlation DLTS measurements, the emission rates of carriers from the radiation-enhanced peaks corresponding to deep levels Rh1, Rh2, Rh3, and RhC were found to be dependent on junction electric field. For RhC, the field dependence data have been analyzed in terms of the Poole-Frenkel model employing a 3-dimensional Coulomb potential with q = 2e (electronic charge). Temperature dependence of the hole capture cross-sections of the levels RhA and RhC was also studied quantitatively. The observed dependence of the hole capture cross-section of RhC on temperature can be interpreted in terms of multiphonon capture model, yielding a capture barrier of 0.2 eV and {sigma}({infinity}) = 2.3 x 10{sup -14} cm{sup 2}. The results of irradiation and isochronal thermal annealing study, in combination with the theoretical analysis of the field dependence of hole emission data, lead us to interpret the levels RhA and RhB as charged centers and probably complexes of arsenic anti-site defect (As{sub Ga}) with Rh-impurity, (As{sub Ga}-Rh). The levels Rh1 and Rh2 are also proposed to be complexes, albeit of a different type, of arsenic anti-site defects (As{sub Ga}) and Rh-impurity (As{sub Ga}-Rh), while the level RhC is likely to be a doubly-charged complex center composed of arsenic interstitial (I{sub As}) and Rh-impurity (I{sub As}-Rh).

36 MATERIALS SCIENCE↗
DOE OSTI2011

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH 3 -based molecular beam epitaxy

High external quantum efficiency (EQE) p-i-n heterojunction solar cellsgrown by NH 3 -based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorptionmeasurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

14 SOLAR ENERGY↗
DOE OSTI2011

Unique properties of CuZrAl bulk metallic glasses induced by microalloying

We studied the glass forming abilities (GFA), mechanical, and physical properties of (CuZr){sub 92.5}Al{sub 7}X{sub 0.5} (X = La, Sm, Ce, Gd, Ho, Y, and Co) bulk metallic glasses (BMGs). We find that the GFA, mechanical, and physical properties can be markedly changed and modulated by the minor rare earth addition. The Kondo screening effect is found to exist in (CuZr){sub 92.5}Al{sub 7}Ce{sub 0.5} BMG at low temperatures and the Schottky effect exists in all the rare earth element doped BMGs. Our results indicate that the minor addition is an effective way for modulating and getting desirable properties of the BMGs. The mechanisms of the effects of the addition are discussed. The results have implications for the exploration of metallic glasses and for improving the mechanical and low temperature physical properties of BMGs.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Band-Structure, Optical Properties, and Defect Physics of the Photovoltaic Semiconductor SnS

SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m{sub 0} perpendicular to the van der Waals layers to 0.2 m{sub 0} into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.

14 SOLAR ENERGY↗
DOE OSTI2012

Laser induced lifetime degradation in p-type crystalline silicon

Pulsed, green laser irradiation of uncoated p-type silicon leads to a significant reduction of the effective minority carrier lifetime. The reason for the lifetime drop lies in the introduction of recombination centres into the laser melted and recrystallized surface layer, leading to a low local minority carrier lifetime {tau} Almost-Equal-To 10 ns inside this surface layer. The laser treatment introduces the impurities oxygen, carbon and nitrogen into the silicon and further leads to an n-type doping of the surface layer. There are strong indications that these impurities are responsible for the observed n-type doping, as well as the lifetime reduction after irradiation. Both effects are removed by thermal annealing. An estimate shows that the low local lifetime does nevertheless not affect the performance of industrial or contacted selective solar cell emitter structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

III-V-N materials for super high-efficiency multijunction solar cells

We have been studying concentrator multi-junction solar cells under Japanese Innovative Photovoltaic R and D program since FY2008. InGaAsN is one of appropriate materials for 4-or 5-junction solar cell configuration because this material can be lattice-matched to GaAs and Ge substrates. However, present InGaAsN single-junction solar cells have been inefficient because of low minority-carrier lifetime due to N-related recombination centers and low carrier mobility due to alloy scattering and non-homogeneity of N. This paper presents our major results in the understanding of majority and minority carrier traps in GaAsN grown by chemical beam epitaxy and their relationships with the poor electrical properties of the materials.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Qualitative comparison of bremsstrahlung X-rays and 800 MeV protons for tomography of urania fuel pellets

We present an assessment of x-rays and proton tomography as tools for studying the time dependence of the development of damage in fuel rods. We also show data taken with existing facilities at Los Alamos National Laboratory that support this assessment. Data on surrogate fuel rods have been taken using the 800 MeV proton radiography (pRad) facility at the Los Alamos Neutron Science Center (LANSCE), and with a 450 keV bremsstrahlung X-ray tomography facility. The proton radiography pRad facility at LANSCE can provide good position resolution (<70 {mu}m has been demonstrate, 20 {mu}m seems feasible with minor changes) for tomography on activated fuel rods. Bremsstrahlung x-rays may be able to provide better than 100 {mu}m resolution but further development of sources, collimation, and detectors is necessary for x-rays to deal with the background radiation for tomography of activated fuel rods.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗