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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Film Delivery Module For Fiber Placement Fabrication of Hybridized Composite Structures

A new fabrication technology has been developed at the NASA Marshall Space Flight Center that will allow for the fabrication of hybridized composite structures using fiber placement processing. This technology was originally developed in response to a need to address the issue of hydrogen permeation and microcracking in cryogenic propellant tanks. Numerous thin polymeric and metallized films were investigated under low temperatures conditions for use as barrier films in a composite tank. Manufacturing studies conducted at that time did not address the processing issues related to fabrication of a hybridized tank wall. A film processing head was developed that will allow for the processing of thin polymeric and metallized films, metallic foils, and adhesives using fiber placement processing machinery. The film head is designed to enable the simultaneous processing of film materials and composite tape/tow during the composite part layup process and is also capable of processing the film during an independent operation. Several initial demonstrations were conducted to assess the performance of the film module device. Such assessments included film strip lay-up accuracy, capability to fabricate panels having internal film liners, and fabrication of laminates with embedded film layers.

Hulcher, Anthony Bruce↗
DOE OSTI2012

Prototyping and Development of Commercial Nanocrystalline and Thin Film Silicon for Photovoltaic Manufacturing

The College of Nanoscale Science and Engineering (CNSE) at the University at Albany received funding from the Department of Energy for its proposal Prototyping and Development of Commercial Nanocrystalline and Thin Film Si for Photovoltaic Manufacturing. This project was created to identify growth rate, texture uniformity, process window, economics, composition and thickness uniformity solutions related to fabricating large area, high efficiency thin film silicon based solar cells. This document serves as a final report for the closure of this program and details the deliverables from CNSE against its original scope of work. Thin-film silicon solar cells are a promising candidate for electricity generation applications because of a combination of advantages. Nanocrystalline and poly-Si based thin films, reduces the use of expensive semiconductor material content, can be deposited onto a foreign substrate (e.g. glass or flexible stainless steel) and enables use of the cells in wide variety of applications. In addition, nano and poly-Si films have higher carrier mobility as well as reduce recombination effects, relative to traditional amorphous-silicon films. They can be mass-produced at low cost, and expected to have a strong position in the international photovoltaic industry, which is experiencing a compounded annual growth of 25%. The objectives included: Demonstration of high rate VHF (Very High Frequency) growth of nc-Si over large areas with uniform thickness. Demonstration of single chamber device growth that allows mass production processing. Demonstration of uniform segmented electrodes. Development of computer models to accelerate efforts. Demonstration of large grain thin film polycrystalline silicon films fabrication. Utilizing the AIC (Aluminum Induced Crystallization) process for large grain silicon film fabrication. Demonstration of 12% efficient nanocrystalline and polycrystalline thin film devices. The end result expected was the production of high-efficiency, low-cost thin film Si devices with reduced cost per watt, allowing dramatically increased market penetration. While further research is required to meet these ultimate goals, this project proved its feasibility.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Effect of processor temperature on film dosimetry

Optical density (OD) of a radiographic film plays an important role in radiation dosimetry, which depends on various parameters, including beam energy, depth, field size, film batch, dose, dose rate, air film interface, postexposure processing time, and temperature of the processor. Most of these parameters have been studied for Kodak XV and extended dose range (EDR) films used in radiation oncology. There is very limited information on processor temperature, which is investigated in this study. Multiple XV and EDR films were exposed in the reference condition (d{sub max.}, 10 Multiplication-Sign 10 cm{sup 2}, 100 cm) to a given dose. An automatic film processor (X-Omat 5000) was used for processing films. The temperature of the processor was adjusted manually with increasing temperature. At each temperature, a set of films was processed to evaluate OD at a given dose. For both films, OD is a linear function of processor temperature in the range of 29.4-40.6 Degree-Sign C (85-105 Degree-Sign F) for various dose ranges. The changes in processor temperature are directly related to the dose by a quadratic function. A simple linear equation is provided for the changes in OD vs. processor temperature, which could be used for correcting dose in radiation dosimetry when film is used.

61 RADIATION PROTECTION AND DOSIMETRY↗
DOE OSTI2021

Correlation of the Structure with Performance in MEH-PPV/dPS Thin Films Illuminated during Processing

Thin films containing conjugated polymers have been used in a wide array of optoelectronic devices, and much research has focused on the conformation of the conjugated polymer as a key aspect to tuning the performance of the resulting devices. White light exposure has been studied as a post-processing method to alter the film’s morphology and photoluminescence (PL) in systems composed of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) and polystyrene (PS). To date, there have been few studies that correlate the changes in the depth profile with the PL performance of MEH-PPV/PS films. This study is designed to address this gap in knowledge. Thin films of MEH-PPV/dPS annealed above the glass transition temperatures (T g ) in an illuminated environment led to lower PL than that found in annealed samples that are not illuminated. However, at higher MEH-PPV loading in the blend film, the extent of variation of PL with illumination diminished. Additionally, time-of-flight secondary ion mass spectrometry and small-angle neutron scattering document the three-dimensional morphology of the films under illumination conditions, which are correlated with the changes in PL. Illumination during annealing compressed MEH-PPV-rich layers in the thin film blends at low loadings of MEH-PPV (below 10 wt %) but resulted in significant in-plane phase separation at higher loadings (above 15 wt %). Both changes increase interchain interactions and lower the PL of the illuminated samples. The changes in the depth profile significantly alter the PL of the films, while the in-plane phase separation affected the optoelectronic properties to a lesser degree. This work, therefore, provides insights into how illumination and film composition can be utilized to predictably alter the structure and optoelectronic performance of conjugated polymer blend films.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Correlation between surface chemistry, density and band gap in nanocrystalline WO3 thin films

Nanocrystalline WO3 thin films were produced by sputter-deposition by varying the ratio of argon to oxygen in the reactive gas mixture during deposition. The surface chemistry, physical characteristics, and optical properties of nanocrystalline WO3 films were evaluated using X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray reflectivity (XRR), and spectrophotometric measurements. The effect of ultra-microstructure was significant on the optical properties of WO3 films. The XPS analyses indicate the formation of stoichiometric WO3 with tungsten existing in fully oxidized valence state (W6+). However, WO3 films grown at high oxygen concentration (>60%) in the sputtering gas mixture were over stoichiometric with excess oxygen. XRR simulations, which are based on isotropic WO3 film - SiO2 interface - Si substrate model, indicate that the density of WO3 films is sensitive to the oxygen content in the sputtering gas. The spectral transmission of the films increased with the increasing oxygen. The band gap of these films increases from 2.78 eV to 3.25 eV with increasing oxygen. A direct correlation between the film-density and band gap in nanocrystalline WO3 films is established based on the observed results.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Empirical assessment of a prismatic daylight-redirecting window film in a full-scale office testbed

Daylight redirecting systems with vertical windows have the potential to offset lighting energy use in deep perimeter zones. Microstructured prismatic window films can be manufactured using low-cost, roll-to-roll fabrication methods and adhered to the inside surface of existing windows as a retrofit measure or installed as a replacement insulating glass unit in the clerestory portion of the window wall. A clear film patterned with linear, 50-250 micrometer high, four-sided asymmetrical prisms was fabricated and installed in the south-facing, clerestory low-e, clear glazed windows of a full-scale testbed facility. Views through the film were distorted. The film was evaluated in a sunny climate over a two-year period to gauge daylighting and visual comfort performance. The daylighting aperture was small (window-towall ratio of 0.18) and the lower windows were blocked off to isolate the evaluation to the window film. Workplane illuminance measurements were made in the 4.6 m (15 ft) deep room furnished as a private office. Analysis of discomfort glare was conducted using high dynamic range imaging coupled with the evalglare software tool, which computes the daylight glare probability and other metrics used to evaluate visual discomfort. The window film was found to result in perceptible levels of discomfort glare on clear sunny days from the most conservative view point in the rear of the room looking toward the window. Daylight illuminance levels at the rear of the room were significantly increased above the reference window condition, which was defined as the same glazed clerestory window but with an interior Venetian blind (slat angle set to the cut-off angle), for the equinox to winter solstice period on clear sunny days. For partly cloudy and overcast sky conditions, daylight levels were improved slightly. To reduce glare, the daylighting film was coupled with a diffusing film in an insulating glazing unit. The diffusing film retained the directionality of the redirected light spreading it within a small range of outgoing angles. This solution was found to reduce glare to imperceptible levels while retaining for the most part the illuminance levels achieved solely by the daylighting film.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2018

Self-Assembly of Cellulose Nanocrystals into Semi-Spherical Photonic Cholesteric Films

Spherical-shape cholesteric (Ch) photonic films offer promising applications such as omnidirectional lasing and broadband reflection. Here, a strategy is reported for the fabrication of photonic Ch films by the self-assembly of cellulose nanocrystals (CNCs) in semi-spherical cavities. It is shown that film structure and photonic properties are controlled by the film curvature, the composition of the precursor CNC suspension, and its liquid crystalline or isotropic state. The effect of curvature of the drying Ch-CNC films coupled with the restricted mobility of CNCs during film preparation results in the variation in pitch and helical axis inclination, thus leading to broadband reflectance properties of the films. The role of curvature of the Ch-CNC films is underlined by comparing their distinct properties with those of planar films with the same composition. We report these findings provide a novel insight into the design and development of biomimetic photonic Ch films.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Stoichiometric Control and Optical Properties of BaTiO 3 Thin Films Grown by Hybrid MBE

BaTiO 3 is a technologically relevant material in the perovskite oxide class with above-room-temperature ferroelectricity and a very large electro-optical coefficient, making it highly suitable for emerging electronic and photonic devices. An easy, robust, straightforward, and scalable growth method is required to synthesize epitaxial BaTiO 3 thin films with sufficient control over the film's stoichiometry to achieve reproducible thin film properties. Here the growth of BaTiO 3 thin films by hybrid molecular beam epitaxy is reported. A self-regulated growth window is identified using complementary information obtained from reflection high energy electron diffraction, the intrinsic film lattice parameter, film surface morphology, and scanning transmission electron microscopy. Subsequent optical characterization of the BaTiO 3 films by spectroscopic ellipsometry revealed refractive index and extinction coefficient values closely resembling those of stoichiometric bulk BaTiO 3 crystals for films grown inside the growth window. Even in the absence of a lattice parameter change of BaTiO 3 thin films, degradation of optical properties is observed, accompanied by the appearance of a wide optical absorption peak in the IR spectrum, attributed to optical transitions involving defect states present. Therefore, the optical properties of BaTiO 3 can be utilized as a much finer and more straightforward probe to determine the stoichiometry level present in BaTiO 3 films.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Tuning hydrophobicity of a fluorinated terpolymer in differently assembled thin films

In the current work, casting from good solvent (acetone) and casting from mixed solvent and nonsolvent were employed for preparing thin films of terpolymer of Tetrafluoroethylene (TFE), Hexafluoropropylene (HFP), and Vinylidene fluoride (VDF) (THV), on silicon wafers. These films revealed various morphologies and wetting behaviors depending on the solution concentration, temperature, and thin film preparation method. The THV thin films prepared by casting from good solvent showed smooth morphology with holes. The thin film prepared from a 3 wt % THV/acetone solution by casting from good solvent at 15 °C demonstrated spheres in addition to the smooth morphology, while the thin film prepared from a 5 wt % THV/acetone solution at 15 °C by casting from good solvent had a mesh-like structure with some linked spheres. Casting the thin films from mixed solvent and nonsolvent resulted in various morphologies such as different sphere sizes embedded in a dense film layer, and hexagonal close packed structures. The thin films prepared by casting from good solvent showed a slightly hydrophobic character, with a measured water contact angle of approximately 99°, while the nonsolvent cast films had a water contact angle as high as 145°.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al 0.6 Sc 0.4 N Films Using In Situ Optical Emission Spectrometry

High‐Sc Al 1– x Sc x N thin films are of tremendous interest because of their attractive piezoelectric and ferroelectric properties, but overall film quality and reproducibility are widely reported to suffer as x increases. In this study, structural and electrical properties of metastable Al 0.6 Sc 0.4 N films are connected with plasma changes during film growth, identified via glow discharge optical emission spectroscopy (GD‐OES), and linked to the target mode changes. This in situ GD‐OES technique uses changes in the N 2 (I) intensity, correlated with DC bias hysteresis behavior of a Al 0.6 Sc 0.4 target in metallic and poisoned modes, to identify films that subsequently exhibit unacceptable structural and electrical performance. Two representative samples deposited under identical conditions but possessing distinct properties related to phases present in the films are focused on. Films sputtered under a poisoned target mode produce pure wurtzite ferroelectric Al 0.6 Sc 0.4 N with a reversible 80 μC cm −1 polarization and 3.1 MV cm −1 coercive field. When identical chamber settings are used but the process starts in metallic mode, a mixed wurtzite/rocksalt film is deposited which exhibits nanometer‐scale changes to the film microstructure and a nonferroelectric response. These results illustrate the utility of optical emission spectroscopy for tracking target mode fluctuations when fabricating metastable materials such as high‐Sc Al 1– x Sc x N films.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Large Area Transfer of Bismuth‐Based Layered Oxide Thin Films Using a Flexible Polymer Transfer Method

Magnetic and ferroelectric oxide thin films have long been studied for their applications in electronics, optics, and sensors. The properties of these oxide thin films are highly dependent on the film growth quality and conditions. To maximize the film quality, epitaxial oxide thin films are frequently grown on single-crystal oxide substrates such as strontium titanate (SrTiO 3 ) and lanthanum aluminate (LaAlO 3 ) to satisfy lattice matching and minimize defect formation. However, these single-crystal oxide substrates cannot readily be used in practical applications due to their high cost, limited availability, and small wafer sizes. One leading solution to this challenge is film transfer. In this demonstration, a material from a new class of multiferroic oxides is selected, namely bismuth-based layered oxides, for the transfer. A water-soluble sacrificial layer of Sr 3 Al 2 O 6 is inserted between the oxide substrate and the film, enabling the release of the film from the original substrate onto a polymer support layer. The films are transferred onto new substrates of silicon and lithium niobate (LiNbO 3 ) and the polymer layer is removed. These substrates allow for the future design of electronic and optical devices as well as sensors using this new group of multiferroic layered oxide films.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Control of deviatoric stress in the diamond anvil cell through thermal expansion mismatch stress in thin films

Elastic and plastic properties of materials and phase transitions at extreme conditions vary with both hydrostatic pressure and deviatoric stress. To generate and measure controlled deviatoric stress at pressures beyond those accessible with large volume differential and rotational presses and optical access for spectroscopy, experiments tested the combination of diamond anvil cell and thin film technology. Thin films of polycrystalline Cr-doped Al 2 O 3 ruby were prepared using pulsed laser deposition on single-crystal substrates of either Al 2 O 3 sapphire or yttria-stabilized cubic zirconia for contrasting initial film stress, and loaded in diamond anvil cells for confining stress. The piezospectroscopic response of the ruby films demonstrates consistently higher deviatoric stress in the film on zirconia relative to the film on the control sapphire, and an increase in deviatoric stress with applied load. Complementary synchrotron X-ray diffraction of the zirconia substrate confirmed that no pressure-induced phase transitions impacted the stress state of the ruby film, but differences in compressibility of film and substrate result in changes in film stress analogous to thermal expansion mismatch. Furthermore, this technique may be applied to evaluate elastic and plastic response of thin films of a variety of materials under extreme stress.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Mechanical, Barrier and Antioxidant Properties of Chitosan Films Incorporating Cinnamaldehyde

Chitosan films (CF) [1 and 2% w/v] alone and with cinnamaldehyde (CNE) [0.25, 0.5 and 1% v/v] were prepared using an emulsion method, and the obtained films were characterized in terms of water vapor permeability (WVP), water solubility and optical, mechanical and antioxidant properties. The incorporation of CNE at 1% (v/v) significantly decreased the water solubility of the film by approximately 4% for the 1 and 2% CF films, whereas the WVP increased (2.5–3.5 times). The incorporation of CNE (0.25 and 0.5%) into 2% CF significantly increased the tensile strength (TS) (62 and 34%, respectively) and the percent elongation (%E) values, 26, 30 and 52% for CF that contained 0.25, 0.5 and 1% CNE, respectively. The largest value of the elasticity modulus (EM) was observed for 2% CF with 0.25% CNE. All films exhibited a yellow appearance (b*), but the CNE content had a marked impact on the coloration of the films. The CNE recoveries of the CF films (1 and 2%) with 1% of CNE were high (43 and 67%). The antioxidant activities indicated that the incorporation of 1% CNE into CF films (1 and 2%) increased the antioxidant activity. The protective effects of the films with and without CNE on erythrocytes were very strong (36–72% hemolysis inhibition). These results suggest there are potential applications for CF-CNE films as active packaging for the preservation of food products.

36 MATERIALS SCIENCE↗
DOE OSTI2019

A Simple Approach for the Synthesis of Cellulose Nanofiber Reinforced Chitosan/PVP Bio Nanocomposite Film for Packaging

The development of chitosan-based food packaging film has been increasing due to its wider availability, biodegradability, low-cost, and renewability. The purpose of this study was to develop cellulose nanofibers (CNFs) reinforced Chitosan/PVP(CHP) green bio nanocomposite film by solvent casting method with enhanced barrier and mechanical property. CNFs of dimension 9–11 nm and 100–200 nm were extracted from jute fibers by directly treating it with HNO{sub 3}–NaNO{sub 2} mixture. Bio nanocomposite films were synthesized with various concentrations of CNFs and evaluated using SEM, TGA/DTG and XRD to analyze the morphology, thermal behavior and crystallinity of bio nanocomposite films. SEM analysis revealed the uniform dispersion of CNFs in CHP matrix. Thermal stability of prepared bio nanocomposite films was improved with the loading of 5 wt% of cellulose nanofibers. ATR(FT-IR) spectra shows physical interaction between all the components of bio nanocomposite film. The bio nanocomposite films were also characterized for physical property like thickness, mechanical testing and barrier properties. The addition of CNFs significantly enhanced the mechanical property of bio nanocomposite films. Furthermore, water and oxygen transmission rate of bio nanocomposite film decreased with the increase in CNFs concentration. Overall the performed studies confirmed, the use of CNFs in polymer matrix makes it possible to produce a flexible, transparent, thermally stable bio nanocomposite film with enhanced mechanical and barrier properties for food packaging applications.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of Yb Substitution on Microstructure and Superconducting Properties of Y{sub 1−x}Yb{sub x}Ba{sub 2}Cu{sub 3}O{sub 7−δ} Films

The purpose of this study was to improve the critical current density (J{sub c}) of YBa{sub 2}Cu{sub 3}O{sub 7−δ} (YBCO) superconducting films at high magnetic fields. Thin Y{sub 1−x}Yb{sub x}Ba{sub 2}Cu{sub 3}O{sub 7−δ} (Y{sub 1−x}Yb{sub x}BCO) superconducting films on LaAlO{sub 3} substrates were prepared by modified low-fluorine metal organic deposition method (LF-MOD) in order to investigate the effect of Yb substitution on the microstructure and superconducting properties of a YBCO-coated conductor. In this study, single-phased, c-axial-aligned Y{sub 1−x}Yb{sub x}BCO films were obtained. Yb doping had a little effect on the critical temperature (T{sub c}) and transition width (ΔT) values of Y{sub 1−x}Yb{sub x}BCO films. An abnormal phenomenon was observed that the J{sub c} of Y{sub 1−x}Yb{sub x}BCO films at low field was smaller than that of the pure YBCO film, but the J{sub c} of Y{sub 1−x}Yb{sub x}BCO films at high field was much greater than that of the undoped YBCO film. Compared to pure YBCO film, the J{sub c} values of Y{sub 0.75}Yb{sub 0.25}BCO and Y{sub 0.25}Yb{sub 0.75}BCO films were enhanced by a factor of 8 at 8 T, 65 K, which meant that chemical substitution of Yb into the Y site could improve flux pinning significantly under the high magnetic field in Y{sub 1−x}Yb{sub x}BCO coated conductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Thickness-Dependent Thermal Oxidation of Ni into NiO Thin Films

We report thickness-dependent thermal oxidation in Ni (t = 10–300 nm) thin films exposed to air annealing and the resulting vibrational, magnetic and electrical properties of Ni films deposited directly on thermally oxidized Si substrate using magnetron sputtering technique at ambient temperature. As-deposited Ni films exhibit face-centred cubic structure with fine crystals and large lattice constant (a{sub Ni}) at lower t (< 50 nm). With increasing t, a{sub Ni} decreases and approaches to bulk value. With increasing T{sub A}, a{sub Ni} not only decreases to bulk Ni due to improved crystallization but also reduces below bulk Ni for t > 50 due to formation of NiO. The relative fraction of Ni and NiO in annealed films up to 400 {sup ∘}C strongly depends on t. Annealing Ni films at 500 {sup ∘}C results into complete oxidation of Ni into granular-type NiO. X-ray reflectivity studies reveal that oxidation process occurs from surface of the films converting Ni into NiO possibly through layer by layer process, which is subtle to t. Raman spectra show that intensity ratio between one-phonon longitudinal optical (LO) and two-phonon LO bands decreases and intensity of two-magnon band increases with increasing t for films annealed at particular T{sub A}. This confirms the growth of NiO not only with increasing T{sub A}, but also with t. As-deposited films exhibit ferromagnetism at room temperature. The presence of Ni and NiO in annealed films implies coexistence of ferromagnetic and antiferromagnetic interactions, leading to tunable exchange bias (H{sub E}), whose magnitude strongly depends on the ratio between Ni and NiO. Electrical resistance (R) of the as-deposited Ni films decreases with increasing t and follows the Namba’s model. Upon annealing, R increases largely due to oxidation of Ni. The observed results are explained on the basis of thickness dependent thermal oxidation process with increasing T{sub A}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Study on mechanically alloyed tin telluride screen-printed films for optoelectronic device applications

Narrow band gap semiconductor tin telluride (SnTe) was synthesized by mechanical alloying and its film was deposited on glass substrates by the economically and commercially feasible screen-printing technique. Deposition of the film was followed by sintering. Different analytical techniques were utilized to study the structure, surface morphology, elemental, optical and electrical characteristics of the film. X-ray diffraction analysis confirms that the film is polycrystalline in nature and exhibits rock salt type structure with preferred orientation of grains along (200) direction. EDAX spectrum confirms the presence of Sn and Te elements in the film. SEM image shows that the film exhibits uniform surface. The energy band gap of the film was determined by reflection spectra. The film is found to have a direct band gap of 0.37 eV. The dark electrical conductivity and activation energy of the film were measured in temperature range 300–380 K. Hall Effect measurement indicates that the film has p-type electrical conductivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Study of the Electrical and Diffusion Barrier Properties in Ultrathin Carbon Film-Coated Copper Microwires for Interconnects

Four specimen patterns with the microstructure of a microcopper wire are deposited on the Si-wafer substrate plus thermal oxide (SiO{sub 2}) film as the top layer. Each pattern was prepared to have two kinds of specimens, including with and without ultrathin carbon film between the copper wire and the top layer (SiO{sub 2}). The effect of carbon film on electrical properties is evaluated via the measurements of the I (current)–V (voltage) curve, sheet electrical resistance, current leakage, and its ratio and effective permittivity. A rapid thermal annealing (RTA) technique is provided as an economic and efficient method to grow the ultrathin carbon film rapidly as the interlayer. Appropriate choices of 900 °C and 3 min as the annealing temperature and time can produce ultrathin carbon film with nearly 100% coverage of the copper surface. The sheet resistance of specimen demonstrates the behavior exactly opposite to that of the carbon film coverage of wire surface. The combined effect of elevating the voltage and annealing temperature of the specimen with carbon film on the current leakage is much lower than that arising in the specimen without carbon film, so long as the carbon films operating at that temperature (between 350 and 500 °C) are still sustainable. The differences in current leakage and effective permittivity between these two kinds of specimen are significantly increased by raising the temperature. The intensity (IC) of copper diffusions into the SiO{sub 2} layer in the specimens with the carbon film demonstrates behavior similar to that of current leakage (CL). The IC and CL values for the temperatures ≦ 350 °C are much lower than those obtained at 500 °C.

36 MATERIALS SCIENCE↗