Determination of effective optical gap in dye/TiO{sub 2} systems inspired by p-n junctions
The effective optical gap and device current limits of dye-sensitized solar cells (DSCs) were investigated. Optical gap determination was based on an approach that assumes the presence of a nanoscale p-n junction in the DSCs between the bulk TiO{sub 2} semiconductor and the dye-cluster with quantum size effect. On the basis of this approach, the effective optical gap of the dye-absorber was extracted from a relation between external quantum efficiency and photon energy. The short-circuit current density of the fabricated DSCs showed a current loss in the range from 3.7 to 5.1 mA cm{sup −2} compared to the device current limit. This current loss can be mainly attributed to the light reflection of the window layer and the native charge-transfer loss by device imperfections, including subsidiary charge-transfer loss by a nanoscale Schottky junction between TiO{sub 2} and the electrolyte.