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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,045 records · Page 58
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Characterization and Absolute QE Measurements of Delta-Doped N-Channel and P-Channel CCDs

In this paper we present the methodology for making absolute quantum efficiency (QE) measurements from the vacuum ultraviolet (VUV) through the near infrared (NIR) on delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, and good camera vacuum to prevent chip condensation, and more stringent handling requirements. The system used for these measurements was originally designed for deep UV characterization of CCDs for the WF/PC instrument on Hubble and later for Cassini CCDs.

Jacquot, Blake C.↗
NASA NTRS2005

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 °C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices ((CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.

Nikzad, Shouleh↗
NASA NTRS1994

Delta-Doped CCDs for Enhanced UV Performance

Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months.

silicon↗
DOE OSTI2020

Selenium-doped sulfur cathodes for rechargeable batteries

An electrochemical device includes an anode, a separator, a cathode comprising a selenium-doped sulfur/carbon composite that includes a conductive carbon matrix and nano-sized selenium-doped sulfur particles of formula SxSey, where a ratio of x:y is from 2.5 to 1000, and an electrolyte comprising a salt and a non-aqueous fluorinated ether solvent.

25 ENERGY STORAGE↗
DOE OSTI2020

Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

Systems and methods of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment in contact with the sample.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Computational Study of Variable Fuel-Air Ratio and Hydrogen Doping in a Rotating Detonation Engine

Rotating detonation engines (RDEs) hold great promise as a technology for powering aviation engines. The pressure gain that results from continuously traversing detonation waves enables high theoretical performance compared to deflagration-based combustion. However, the harsh operating conditions inside an RDE restrict the availability of suitable experimental diagnostics to study these systems in detail and the range of spatial and temporal scales render numerical simulations of these systems difficult. In this study, we have combined adaptive mesh refinement and a robust shock-capturing approach to study RDE systems computationally using the compressible, reactive solver PeleC. Multi-species transport along with compressible Navier-Stokes equations are solved in the model along with finite-rate chemistry. Complex geometries are represented using an embedded boundary method with second-order spatial accuracy and the system is evolved in time using a second-order Runge-Kutta method. We present studies of a methane-air RDE system that is doped with varying levels of hydrogen. Our analysis focusses on how fuel mixture and doping levels effect the detonation flame structure and the generation of multiple wave modes.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

Photonuclear transmutation doping in gallium-based semiconductor materials

The present invention relates to various high quality n-type and p-type doped gallium-based semiconductor materials, electronic components incorporating these materials, and processes of producing these materials. In particular, The present invention relates processes to achieve high quality, uniform doping of a whole wafer or a thin layer of gallium-based semiconductor materials for various applications such as a vertical power transistor or diode.

Kwon, Jae Wan↗
DOE OSTI2024

Combustion Synthesis of Transuranic-doped Ceramics for Nuclear Waste Immobilization

Utilizing the devised SCS technique, crystalline transuranic-doped zirconate pyrochlores were formed for the first time without the need for a subsequent heating step. Typically, materials rapidly synthesized in a single-step self-sustaining exothermic reaction require further heating to induce crystallization and purify the product. The need for this secondary processing step can be attributed to factors such as an improper oxidizer to fuel ratio and the utilization of strong complexing compounds as fuels (i.e., reducing agents), all of which hinder complete combustion. The efficacy of the developed process was demonstrated by fabricating crystalline plutonium-doped Gd2Zr2O7 from solutions containing metal nitrates and urea in a properly tuned ratio

Burton-Allen, Janiya D.↗
DOE OSTI2024

High-temperature thermochemical energy storage materials using doped magnesium-transition metal spinel oxides

High-temperature thermochemical energy storage materials using doped magnesium-transition metal spinel oxides are provided. —transition metal spinel oxides, such as magnesium manganese oxide (MgMn) 3 O 4 , are promising candidates for high-temperature thermochemical energy storage applications. However, the use of these materials has been constrained by the limited extent of their endothermic reaction. Embodiments described herein provide for doping magnesium-transition metal spinel oxides to produce a material of low material costs and with high energy densities, creating an avenue for plausibly sized modules with high energy storing capacities.

Muhich, Christopher↗
DOE OSTI2025

Study on Electropolishing of N-Doped Niobium Surfaces and 650 MHz Cavity for High-Gradient Performance

This presentation provides an overview of the latest studies on electropolishing (EP) of nitrogen-doped niobium surfaces and 650 MHz cavities. The first study focuses on optimizing EP parameters to achieve a pit-free surface on N-doped niobium, highlighting the effects of process conditions on surface pitting and suggesting strategies for mitigation. The second study investigates the EP of 650 MHz cavities to achieve high-gradient performance comparable to that of 1.3 GHz niobium SRF cavities. Additionally, an example of a 650 MHz single-cell cavity is presented, demonstrating its record-high gradient achieved through optimized EP conditions.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Broad-range tuning of ferroelectric switching of La x Bi 1−x FeO 3 epitaxial films via digital doping using off-axis co-sputtering

To investigate the scope of ferroelectric behavior in La-substituted BiFeO 3 films, La x Bi 1−x FeO 3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO 3 (001) and DyScO 3 (110) substrates with a SrRuO 3 bottom electrode layer. A digital-doping deposition method was used to enable precise control and continuous tuning of La concentration in high-quality LaxBi 1−x FeO 3 films across a wide range of x = 0.05–0.60, which was systematically investigated using piezoresponse force microscopy. Robust and reversible out-of-plane ferroelectric switching has been observed up to x = 0.35, while films with x ≥ 0.37 exhibit no measurable ferroelectric behavior, indicating a sharp ferroelectric-to-paraelectric phase transition between x = 0.35 and 0.37. This represents the highest reported La concentration in LaxBi 1−x FeO 3 films that retains ferroelectric ordering, highlighting opportunities to engineer ferroelectric and multiferroic properties in complex oxide heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Tuning counterion chemistry to reduce carrier localization in doped semiconducting carbon nanotube networks

Understanding and controlling the impact that electrostatic interactions have on the transport of injected charge carriers is important for the utilization of pi-conjugated semiconductors in opto-electronic applications. Here, we explore the impact of dopant chemical and electronic structure on the doping efficacy and charge carrier transport in semiconducting single-walled carbon nanotube (s-SWCNT) networks using molecular charge-transfer dopants based on functionalized icosahedral dodecaborane (DDB) clusters. Calculations indicate that localization of electron density on the DDB core reduces the coulombic interactions that contribute to hole localization in the s-SWCNTs, thereby improving charge carrier transport. The enhanced delocalization produces an increase in the electrical conductivity and thermopower at lower charge carrier densities, yielding enhanced thermoelectric transport and a thermoelectric power factor that surpasses the previous best in class for enriched s-SWCNT thin-film networks. This strategy can be applied broadly across pi-conjugated semiconductors to tune and enhance performance in a variety of energy harvesting devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Influence of heterovalent doping on tetrahedral N interstitial formation in dilute GaAsN alloys

Dilute alloying of GaAs with N enables bandgap tuning for near-infrared to mid-infrared optoelectronic devices. However, non-substitutional N incorporation has been linked to lower absorption and emission efficiencies in dilute-nitride-alloy-based devices, especially in those containing heterovalent dopants. Here, in this work, we examine the influence of heterovalent dopants on N incorporation mechanisms in dilute GaAs 1−x N x alloys with N composition intentionally below the threshold composition for the formation of tetrahedral N interstitials (N tetra ) in undoped GaAs 1−x N x . For undoped GaAs 1−x N x , 20% of the N incorporates in non-substitutional sites, as (N-N) As and (N-As) split interstitials. Interestingly, Si dopants induce the formation of N tetra , while Be doping has a negligible effect on the interstitial type. Although elastic interactions due to opposite signs of the misfit volumes of N tetra and N As contribute to N tetra incorporation above a threshold N composition, Si dopants reduce the threshold composition, due to the Fermi level-dependent stability of N tetra .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Direct and Inverse Photoelectron Spectroscopy Evidence for a Revised Picture of Electronic States of Negative Polarons in n‐Doped C 60

Abstract Determining the electronic levels associated with polarons, the fundamental charge carriers in organic semiconductors, is key to understanding the charge transport properties of these materials. Recent findings challenge the traditional view of these electronic levels by highlighting the importance of intra‐molecular Coulomb interactions in polarons. Experimental evidence was previously presented for a revised model of the negative polaron in the case of the polymer semiconductor poly(NDI2OD‐T 2 ); there, the addition of an excess electron was seen to lead to the emergence of a singly occupied state within the energy gap of the undoped material and an unoccupied state above the edge of the conduction states . Here, focus is on a small‐molecule semiconductor, C 60 , and spectral evidence is provided of a similar picture for the new states appearing upon polaron formation. Specifically, direct and inverse photoemission spectroscopy is used to investigate the density of states in C 60 films n‐doped with two dimeric dopants. The Coulomb interaction energy (Hubbard U ) of the C 60 anion is experimentally determined to be ≈1.1 eV, a value that aligns closely with theoretical predictions.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ultraviolet Laser Activation of Phosphorus-Doped Polysilicon Layers for Crystalline Silicon Solar Cells

In crystalline silicon photovoltaics (c-Si PV), a pulsed laser can be used as a substitute for a high-temperature furnace dopant diffusion/activation step. In contrast to furnace-based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, useful in advanced architectures such as the interdigitated back contact (IBC) solar cell. In this study, a pulsed ultraviolet (UV) laser is utilized for phosphorus dopant activation within a low-pressure chemical vapor deposited (LPCVD) polycrystalline silicon (poly-Si) passivated contact layer. The highest implied open-circuit voltage iV oc values achieved using this approach reach 726 mV. However, this comes at the expense of high specific contact resistivities ρ c , which is attributed to a lower dopant concentration across the poly-Si(n + )/SiO x /c-Si interface. Regardless, the optimum iV oc , ρ c combination is measured at a laser fluence of 0.78 J cm -2 producing values of 712 mV and 89 mΩ-cm 2 , respectively. These values are still compatible with high-efficiency solar cell designs, underscoring the feasibility and effectiveness of this approach.

14 SOLAR ENERGY↗
DOE OSTI2022

Activating Nitrogen–doped Graphene Oxygen Reduction Electrocatalysts in Acidic Electrolytes using Hydrophobic Cavities and Proton–conductive Particles

Although pyridinic-nitrogen (pyri-N) doped graphene is highly active for the oxygen reduction reaction (ORR) of fuel cells in alkaline media, the activity critically decreases under acidic conditions. Herein we report on how to prevent the deactivation based on the mechanistic understanding that O 2 + pyri–NH ⁺ + e – → O 2,a + pyri–NH governs the ORR kinetics. First, we considered that the deactivation is due to the hydration of pyri-NH + , leading to a lower shift of the redox potential. Introducing the hydrophobic cavity prevented the hydration of pyri-NH + but inhibited the proton transport. We then increased proton conductivity in the hydrophobic cavity by introducing SiO 2 particles coated with ionic liquid polymer/Nafion® which kept the high onset potentials with an increased current density even in acidic media.

25 ENERGY STORAGE↗
DOE OSTI2021

Gallium‐Doping Effects on Structure, Lithium‐Conduction, and Thermochemical Stability of Li 7‐3 x Ga x La 3 Zr 2 O 12 Garnet‐Type Electrolytes

Abstract One of the most promising electrolytes for all‐solid‐state lithium batteries is Li 7 La 3 Zr 2 O 12 . Previously, their thermodynamic stability, Li‐ion conductivity, and structural features induced by Ga‐doping have not been empirically determined or correlated. Here, their interplay was examined for Li 7−3 x Ga x La 3 Zr 2 O 12 with target x Ga=0, 0.25, 0.50, 0.75, and 1.00 atoms per formula unit (apfu). Formation enthalpies, obtained with calorimetry and found to be exothermic at all compositions, linearly decreased in stability with increased x Ga. At dilute x Ga substitution, the formation enthalpy curve shifted stepwise endothermically, and the conductivity increased to a maximum, coinciding with 0.529 Ga apfu. This correlated with percolation threshold analysis (0.558 Ga apfu). Further substitution (0.787 Ga apfu) produced a large decrease in the stability and conductivity due to a large increase in point defects and blocked Li‐migration pathways. At x Ga=1.140 apfu, a small exothermic shift was related to defect cluster organization extending the Li hopping distance and decreased Li‐ion conductivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Testing and Modeling of Functionally Graded Aluminum-Doped Zinc Oxide Using Spark Plasma Sintering and Discrete Powder Layers of Varying Composition

Functionally graded material (FGM) ZnO is made via spark plasma sintering/field-assisted sintering technique (SPS/FAST) by varying the Al dopant content along the z-axis or pressing direction. A wide range of Al content (0–5 wt%) is used by adding Al powder to nanosized ZnO powder. Thermoelectric (TE) measurements are done on the FGM and individual layers made separately. X-ray diffraction (XRD) shows two phases, ZnO and spinel phase (ZnAl 2 O 4 ). High-resolution Raman spectroscopy reveals doped ZnO and spinel phase (ZnAl 2 O 4 ) spatially and shows segregation in the layer with highest Al content. Electron backscatter diffraction (EBSD) reveals noticeable grain growth with decreasing Al content, and there is a common, random preferred orientation in all layers. The tested properties are used to simulate efficiency curves for a discretely graded, five-layer FGM as well as a homogenous material, where both graded structures provide an opportunity to widen the current density ranges and therefore the temperature range of useful energy conversion.

36 MATERIALS SCIENCE↗