Development of chemical analysis techniques for advanced materials research program Fourth quarterly progress report, Sep. 1 - Nov. 30, 1965
Mass and emission spectrographic analyses of magnesium oxide and tantalum carbide to determine impurities
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Mass and emission spectrographic analyses of magnesium oxide and tantalum carbide to determine impurities
Graphite effect on molybdenum-carbide composite properties and tungsten, vanadium, hafnium, tantalum, niobium, and zirconium metal systems
Compilation of photographs and graphs relative to determining thermal emittance of refractory metals, oxides, carbides, and titanates
Thermal emittance of refractory metals, oxides, carbides, and titanates for determining materials for use in space radiators
Electron microscope study of boron-doped titanium carbide samples
Technique developed for incorporating alumina and silicon carbide fibers in cobalt base alloy for application at high temperatures
High strength, hot pressed metal carbide-graphite composites
Diode and reactor design and nuclear fuels including uranium carbide alloys, uranium dioxide and uranium dioxide cermets for industry proposed in-pile thermionic space reactors
Photoelectric yield data on n- and p-type silicon carbide crystals in vacuum UV
Stacking faults in titanium carbide shown by electron microscopy bounded by partial dislocations
Fabrication of high temperature silicon carbide integrated circuit using junction-gate type field effect transistor as active component
Factors affecting reinforcement of aluminum with boron carbide whiskers
Carbides, nitrocarbides of nickel, cobalt alloys, and nickel-cobalt alloys evaluated for electrocatalysts in low temperature hydrogen peroxide fuel cells with alkaline electrolyte
Carbides, nitrides, nitrocarbides, and carbonitrides of iron examined for catalytic activity in oxygen reduction reaction in potassium hydroxide - peroxide fuel cells
Fusion temperature in refractory carbide systems
Production of carbide singlets during carbon compound decomposition in shock tube
The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions. Contrast extinction analysis of these dislocation lines reveals they are edge type basal plane dislocations that track the growth direction. Polytype phase transition and stacking faults were observed by high-resolution TEM (HRTEM), in agreement with SWBXT and Raman scattering.
We highlight results of a broad spectrum of efforts on lower-temperature processing of nanomaterials, novel approaches to energy conversion, and environmentally rugged devices. Solution-processed quantum dots of copper indium chalcogenide semiconductors and multiwalled carbon nanotubes from lower-temperature spray pyrolysis are enabled by novel (precursor) chemistry. Metal-doped zinc oxide (ZnO) nanostructured components of photovoltaic cells have been grown in solution at low temperature on a conductive indium tin oxide substrate. Arrays of ZnO nanorods can be templated and decorated with various semiconductor and metallic nanoparticles. Utilizing ZnO in a more broadly defined energy conversion sense as photocatalysts, unwanted organic waste materials can potentially be repurposed. Current efforts on charge carrier dynamics in nanoscale electrode architectures used in photoelectrochemical cells for generating solar electricity and fuels are described. The objective is to develop oxide nanowire-based electrode architectures that exhibit improved charge separation, charge collection and allow for efficient light absorption. Investigation of the charge carrier transport and recombination properties of the electrodes will aid in the understanding of how nanowire architectures improve performance of electrodes for dye-sensitized solar cells. Nanomaterials can be incorporated in a number of advanced higher-performance (i.e. mass specific power) photovoltaic arrays. Advanced technologies for the deposition of 4H-silicon carbide are described. The use of novel precursors, advanced processing, and process studies, including modeling are discussed from the perspective of enhancing the performance of this promising material for enabling technologies such as solar electric propulsion. Potential impact(s) of these technologies for a variety of aerospace applications are highlighted throughout. Finally, examples are given of technologies with potential spin-offs for dual-use or terrestrial applications.