Influence of exciton lifetime on charge carrier dynamics in an organic heterostructure
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charge transport↗
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Results for “CARRIER MODULATION”
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Depletion of parallel conducting layers in high mobility In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As modulation doped field effect transistors
Self-consistent calculations for solving the Poisson and Schrödinger equations were performed in order to study parallel conduction in the In{sub 0.52}Al{sub 0.48}As barrier layer in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As Modulation Doped Field Effect Transistors. It is shown that the parallel conducting layer occupied sub-bands can be entirely depleted by wet chemical etching of the upper part of the un-doped In{sub 0.52}Al{sub 0.48}As Schottky layer without affecting the total carrier concentration at the In{sub 0.53}Ga{sub 0.47}As quantum well.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Remote surface optical phonon scattering in ferroelectric Ba 0.6 Sr 0.4 TiO 3 gated graphene
We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba 0.6 Sr 0.4 TiO 3 films, with field effect mobility up to 23 000 cm 2 V –1 s –1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba 0.6 Sr 0.4 TiO 3 , from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Furthermore, our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.
36 MATERIALS SCIENCE↗
Low Dose Ionizing Radiation Modulates Immune Function
In order to examine the effects of low dose ionizing radiation on the immune system we chose to examine an amplified adaptive cellular immunity response. This response is Type IV delayed-type hypersensitivity also called contact hypersensitivity. The agent fluorescein isothiocyanate (FITC) is a low molecular weight, lipophilic, reactive, fluorescent molecule that can be applied to the skin where it (hapten) reacts with proteins (carriers) to become a complete antigen. Exposure to FITC leads to sensitization which is easily measured as a hypersensitivity inflammatory reaction following a subsequent exposure to the ear. Ear swelling, eosinophil infiltration, immunoglobulin E production and cytokine secretion patterns characteristic of a “Th2 polarized” immune response are the components of the reaction. The reaction requires successful implementation of antigen processing and presentation by antigen presenting Langerhans cells, communication with naïve T lymphocytes in draining lymph nodes, expansion of activated T cell clones, migration of activated T cells to the circulation, and recruitment of memory T cells, macrophages and eosinophils to the site of the secondary challenge. Using this model our approach was to quantify system function rather than relying only on indirect biomarkers of cell. We measured the FITC-induced hypersensitivity reaction over a range of doses from 2 cGy to 2 Gy. Irradiations were performed during key events or prior to key events to deplete critical cell populations. In addition to quantifying the final inflammatory response, we assessed cell populations in peripheral blood and spleen, cytokine signatures, IgE levels and expression of genes associated with key processes in sensitization and elicitation/recall. We hypothesized that ionizing radiation would produce a biphasic effect on immune system function resulting in an enhancement at low doses and a depression at higher doses and suggested that this transition would occur in the dose range of 5 to 50 cGy.
63 RADIATION, THERMAL, AND OTHER ENVIRON. POLLUTAN↗
Current interrupt method for calculating the electrochemical impedance in a solid oxide electrolysis stack
Here, in this work the time domain response of Solid Oxide Electrolysis Cells (SOEC) to a current interruption was transformed into the frequency domain using a carrier function Laplace transform, which is fit to the experimental data using a MATLAB Complex Nonlinear Least Squares (CNLS) solver. The hardware implementation, consisting principally of a high-speed switch and a fast-logging Analog to Digital Converter (ADC), was assembled and tested using a calibration module to assess the accuracy, repeatability, and speed of acquisition of the prototype device as compared against a calibrated commercial impedance spectrometer. Additionally, the current interrupt device and commercial FRA were used to acquire the impedance spectra of a four cell SOEC stack with a large, 300 cm 2 , active cell area.
SOEC↗
Quantum filter of spin polarized states: Metal–dielectric–ferromagnetic/semiconductor device
Highlights: • Development of a new spintronics device. • Development of quantum spin polarized filters. • Development of theory of quantum spin polarized filter. - Abstract: Recently we proposed a model for the Quantum Spin-Polarized State Filter (QSPSF). The magnetic moments are transported selectively in this model, detached from the electric charge carriers. Thus, transfer of a spin-polarized state between two conductors was predicted in a system of two levels coupled by exchange interaction. The strength of the exchange interaction between the two conductive layers depends on the thickness of the dielectric layer separating them. External magnetic fields modulate spin-polarized state transfer, due to Zeeman level shift. Therefore, a linearly growing magnetic field generates a series of current peaks in a nearby coil. Thus, our spin-state filter should contain as least three nanolayers: (1) conductive or ferromagnetic; (2) dielectric; and (3) conductive or semiconductive. The spectrum of spin-polarized states generated by the filter device consists of a series of resonance peaks. In a simple case the number of lines equals S, the total spin angular momentum of discrete states in one of the coupled nanolayers. Presently we report spin-polarized state transport in metal–dielectric–ferromagnetic (MDF) and metal–dielectric–semiconductor (MDS) three-layer sandwich devices. The exchange-resonance spectra in such devices are quite specific, differing also from spectra observed earlier in other three-layer devices. The theoretical model is used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment averaged over the surface of the device was carried out. The model predicts the resonance structure of the signal, although at its present accuracy it cannot predict the positions of the spectral peaks.
36 MATERIALS SCIENCE↗
Towards isolated attosecond electron bunches using ultrashort-pulse laser-solid interactions
We investigate MeV-level attosecond electron bunches from ultrashort-pulse laser-solid interactions through similarities between experimental and simulated electron energy spectra. We show measurements of the bunch duration and temporal structure from particle-in-cell simulations. The experimental observation of such bunches favors specular reflection direction when focusing the laser pulse onto a subwavelength boundary of thick overdense plasmas at grazing incidence. Particle-in-cell simulation further reveals that the attosecond duration is a result of ultra-thin (~tenth of a micron) gaps of zero electromagnetic energy density in the modulated reflected radiation, while the bunching (locally peaked electron concentration) comes from the highly-directional electron angular distribution acquired by the electrons in a grazing incidence setup. To isolate a single electron bunch, we perform simulations using 1-cycle laser pulses and analyze the effect of carrier-envelop phase with particle tracking. The duration of the electron bunch can be further decreased by increasing the laser intensity and the focal spot size, while its direction can be changed by tuning the preplasma density gradient.
High-harmonic generation↗
Floquet Cavity Electromagnonics
Hybrid magnonics has recently attracted intensive attention as a promising platform for coherent information processing. In spite of its rapid development, on-demand control over the interaction of magnons with other information carriers, in particular, microwave photons in electromagnonic systems, has been long missing, significantly limiting the potential broad applications of hybrid magnonics. Here, we show that, by introducing Floquet engineering into cavity electromagnonics, coherent control on the magnon-microwave photon coupling can be realized. Leveraging the periodic temporal modulation from a Floquet drive, our first-of-its-kind Floquet cavity electromagnonic system enables the manipulation of the interaction between hybridized cavity electromagnonic modes. Moreover, we have achieved a new coupling regime in such systems: the Floquet ultrastrong coupling, where the Floquet splitting is comparable with or even larger than the level spacing of the two interacting modes, beyond the conventional rotating-wave picture. As a result, our findings open up new directions for magnon-based coherent signal processing.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Carrier and photon dynamics in a topological insulator Bi{sub 2}Te{sub 3}/GaN type II staggered heterostructure
We have demonstrated a type-II band-aligned heterostructure between pulsed laser deposited topological insulator bismuth telluride and metal organic-chemical-vapour deposited GaN on a sapphire substrate. The heterostructure shows a large valence band-offset of 3.27 eV as determined from x-ray photoelectron spectroscopy, which is close to the bandgap of GaN (3.4 eV). Further investigation using x-ray diffraction, Raman spectroscopy, and energy-dispersive x-ray spectrum reveals the stoichiometric and material properties of bismuth telluride on GaN. Steady state photon emission from GaN is found to be modulated by the charge transfer process due to diffusion across the junction. The time constant involved with the charge transfer process is found to be 0.6 ns by transient absorption spectroscopy. The heterostructure can be used for designing devices with different functionalities and improving the performance of the existing devices on GaN.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Osmotic stress-responsive promoter upstream transcripts (PROMPTs) act as carriers of MYB transcription factors to induce the expression of target genes in Populus simonii
Complex RNA transcription and processing produces a diverse range catalog of long noncoding RNAs (lncRNAs), important biological regulators that have been implicated in osmotic stress responses in plants. Promoter upstream transcript (PROMPT) lncRNAs share some regulatory elements with the promoters of their neighbouring protein-coding genes. However, their function remains unknown. Here, using strand-specific RNA sequencing, we identified 209 differentially regulated osmotic-responsive PROMPTs in poplar (Populus simonii). PROMPTs are transcribed bidirectionally and are more stable than other lncRNAs. Co-expression analysis of PROMPTs and protein-coding genes divided the regulatory network into five independent subnetworks including 27 network modules. Significantly enriched PROMPTs in the network were selected to validate their regulatory roles. We used delaminated layered double hydroxide lactate nanosheets (LDH-lactate-NS) to transport synthetic nucleic acids into live tissues to mimic overexpression and interference of a specific PROMPT. The altered expression of PROMPT_1281 induced the expression of its cis and trans targets, and this interaction was governed by its secondary structure rather than just its primary sequence. Based on this example, we proposed a model that a concentration gradient of PROMPT_1281 is established, which increases the probability of its interaction with targets near its transcription site that shares common motifs. Our results firstly demonstrated that PROMPT_1281 act as carriers of MYB transcription factors to induce the expression of target genes under osmotic stress. In sum, our study identified and validated a set of poplar PROMPTs that likely have regulatory functions in osmotic responses.
59 BASIC BIOLOGICAL SCIENCES↗
Full-Circle Resolver-to-Linear-Analog Converter
A circuit generates sinusoidal excitation signals for a shaft-angle resolver and, like the arctangent circuit described in the preceding article, generates an analog voltage proportional to the shaft angle. The disadvantages of the circuit described in the preceding article arise from the fact that it must be made from precise analog subcircuits, including a functional block capable of implementing some trigonometric identities; this circuitry tends to be expensive, sensitive to noise, and susceptible to errors caused by temperature-induced drifts and imprecise matching of gains and phases. These disadvantages are overcome by the design of the present circuit. The present circuit (see figure) includes an excitation circuit, which generates signals Ksin(Omega(t)) and Kcos(Omega(t)) [where K is an amplitude, Omega denotes 2(pi)x a carrier frequency (the design value of which is 10 kHz), and t denotes time]. These signals are applied to the excitation terminals of a shaft-angle resolver, causing the resolver to put out signals C sin(Omega(t)-Theta) and C cos(Omega(t)-Theta). The cosine excitation signal and the cosine resolver output signal are processed through inverting comparator circuits, which are configured to function as inverting squarers, to obtain logic-level or square-wave signals .-LL[cos(Omega(t)] and -LL[cos(Omega(t)-Theta)], respectively. These signals are fed as inputs to a block containing digital logic circuits that effectively measure the phase difference (which equals Theta between the two logic-level signals). The output of this block is a pulse-width-modulated signal, PWM(Theta), the time-averaged value of which ranges from 0 to 5 VDC as Theta ranges from .180 to +180deg. PWM(Theta) is fed to a block of amplifying and level-shifting circuitry, which converts the input PWM waveform to an output waveform that switches between precise reference voltage levels of +10 and -10 V. This waveform is processed by a two-pole, low-pass filter, which removes the carrier-frequency component. The final output signal is a DC potential, proportional to Theta that ranges continuously from -10 V at Theta = -180deg to +10 V at Theta = +180deg..
Alhorn, Dean C.↗
Electron and hole gas in modulation-doped GaAs/Al{sub 1-x}Ga{sub x}As radial heterojunctions
We perform self-consistent Schroedinger-Poisson calculations with exchange and correlation corrections to determine the electron and hole gas in a radial heterojunction formed in a GaAs/AlGaAs core-multi-shell nanowire, which is either n- or p-doped. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping density/gate potential. Contrary to planar heterojunctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between an isotropic, cylindrical distribution deep in the GaAs core (low doping) and a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface. At low doping, they present an additional localization pattern with six separated 2DEGs strips. The field generated by a back-gate may easily deform the electron or hole gas, breaking the sixfold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Ionic Modulation at the LaAlO 3 /KTaO 3 Interface for Extreme High-Mobility Two-Dimensional Electron Gas
Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides-based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxides devices remains far behind their 3d-oxides analogs. The carriers’ mobility in these oxides is significantly hampered by the inevitable presence of defects. Here, in this study, very high mobility (≈22 650 cm 2 V –1 s –1 ) of 5d-2DES confined at the LaAlO 3 /KTaO 3 interface is reported. The high mobility, which is beyond the values observed in SrTiO 3 2DESs in the same carrier-density range, is achieved using the ionic-liquid gating at room temperature. The authors postulate that the ionic-liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back-gate voltage, the authors reveal that the mobility follows the power-law µ ∝ n 1.2 , indicating the very high quality of ionic-liquid-gated LaAlO 3 /KTaO 3 devices, consistent with the postulate. Furthermore, the analysis of the quantum oscillations confirms that the high-mobility electrons occupy the electronic sub-bands emerging from the Ta:5d orbitals of KTaO 3 .
36 MATERIALS SCIENCE↗
Examination of a Size-Change Test for Photovoltaic Encapsulation Materials: Preprint
We examine a proposed test standard that can be used to evaluate the maximum representative change in linear dimensions of sheet encapsulation products for photovoltaic modules (resulting from their thermal processing). The proposed protocol is part of a series of material-level tests being developed within Working Group 2 of the Technical Committee 82 of the International ElectrotechnicalCommission. The characterization tests are being developed to aid module design (by identifying the essential characteristics that should be communicated on a datasheet), quality control (via internal material acceptance and process control), and failure analysis. Discovery and interlaboratory experiments were used to select particular parameters for the size-change test. The choice of a sandsubstrate and aluminum carrier is explored relative to other options. The temperature uniformity of +/- 5C for the substrate was confirmed using thermography. Considerations related to the heating device (hot-plate or oven) are explored. The time duration of 5 minutes was identified from the time-series photographic characterization of material specimens (EVA, ionomer, PVB, TPO, and TPU). Thetest procedure was revised to account for observed effects of size and edges. The interlaboratory study identified typical size-change characteristics, and also verified the absolute reproducibility of +/- 5% between laboratories.
14 SOLAR ENERGY↗
Satellite Data Transmission (SDT) requirement
An 85 Mb/s modem/codec to operate in a 34 MHz C-band domestic satellite transponder at a system carrier to noise power ratio of 19.5 dB is discussed. Characteristics of a satellite channel and the approach adopted for the satellite data transmission modem/codec selection are discussed. Measured data and simulation results of the existing 50 Mbps link are compared and used to verify the simulation techniques. Various modulation schemes that were screened for the SDT are discussed and the simulated performance of two prime candidates, the 8 PSK and the SMSK/2 are given. The selection process that leads to the candidate codec techniques are documented and the technology of the modem/codec candidates is assessed. Costs of the modems and codecs are estimated.
Chie, C. M.↗
Optical Image Subtraction
Report reviews optical image subtraction techniques developed during years 1975 through 1985. Useful in such disciplines as studies of earth resources, meteorology, automatic surveillance, pattern recognition, studies of urban growth, and compression of bandwidth in communication systems. Describes following real-time techniques: source encoding, polarization modulation, pseudocolor image-difference detection, holographic-shear-lens technique, and nonlinear electro-optics. Reported non-real-time image-subtraction techniques are following, all of which involve intensity subtraction: speckle-diffuser encoding, speckle-pattern encoding, halftone-screen encoding,and polarization-shifted carrier encoding. Offers an attractive alternative to digital electronic image subtraction, is faster and treats all parts of images simultaneously.
Liu, Hua-Kuang↗
Fine‐Tuning Alkyl Chains on Quinoxaline Nonfullerene Acceptors Enables High‐Efficiency Ternary Organic Solar Cells with Optimizing Molecular Stacking and Reducing Energy Loss
Abstract Material design of guest acceptor is always a big challenge for improving the efficiency of ternary organic solar cells (OSCs). Here, a pair of isomeric nonfullerene acceptors based on quinoxaline core, Qx–p‐C 7 H 8 O and Qx–m‐C 7 H 8 O, is designed and synthesized. By moving the alkoxy chain attached on side phenyl frommeta‐position topara‐position, both π–π stacking distance and crystallinity are enhanced simultaneously. They obtain the uplifted lowest unoccupied molecular orbital level. Compared to Qx–m‐C 7 H 8 O, Qx–p‐C 7 H 8 O exhibits wider absorption spectrum and higher extinction coefficient. Using D18‐Cl:N3 as host materials, the addition of guest acceptor Qx–p‐C 7 H 8 O significantly improves the power conversion efficiency (PCE) from 17.61% to 18.49% because of higher open‐circuit voltage (0.875 V) and short‐circuit current density (27.85 mA cm −2 ). This can be attributed to the faster exciton dissociation, more balanced carrier mobility, fine fiber morphology, and lower energy loss in the ternary devices. However, Qx–m‐C 7 H 8 O‐based ternary device achieves relatively low PCE of 17.17% because this device shows extremely low electron mobility. The results indicate that molecular stacking, film morphology, etc., can be effectively modulated by fine‐tuning the side chains of guest materials, which may be an effective design rule for further improving the PCE of OSCs.
Chemistry↗
Diagnosing and overcoming recombination and resistive losses in non-silicon solar cells using a silicon-inspired characterization platform
This project aimed to generate the characterization tools needed for accurate and systematic loss analysis in non-silicon photovoltaic solar cell technologies and, through the use of these tools and analysis techniques, contribute to the development of a novel class of hetero-contacts to II-VI absorbers, with the final goal of demonstrating record-breaking CdSeTe devices. CdSeTe solar cells provide a prime example of the potential impact of the techniques we proposed to develop and implement: record poly-CdSeTe cells have bandgap-voltage deficits (W oc ) of approximately 550 mV, as compared with below 400 mV for all other mature PV technologies. Similarly, these record CdSeTe devices have FFs below 80%, when other mature cells are near or above 85%. Frustratingly, a systematic identification of the origin of these sub-par performances—for example recombination or resistive losses—has been lacking, thus slowing down the development of these technologies. Similarly, it is often asserted that CdSeTe cells need a better back (hole) contact. Although most believe this is true, no one knew—at the start of this project—how high the V oc and FF could be for a given cell if it had a perfect back contact. Such characterization techniques and loss analysis methods exist and are routinely performed on c-Si solar cells (e.g. injection-dependent lifetime, Suns-V oc , transfer length method, etc). Over the years, they have been instrumental in the development of silicon devices that operate at 91% of their theoretical (Auger) limit. Lifetime testing, and the associated reconstruction of the implied-J-V curve, can moreover be performed at every cell-processing step, thus allowing a direct peek into the impact of that step on cell performance. Therefore, adapting these techniques and tools to non-Si devices would greatly improve their learning rate. In this project, we developed a Suns-ERE technique—the equipment, methodology, and know-how—to measure the implied-J-V curve, the pseudo-J-V curve, and the actual J-V curve of a thin-film solar cell, allowing an accurate assessment of the quality of the bulk material and its surface passivation, the selectivity of the contact, and its resistivity. We used this technique to show that the absorber of present CdSeTe solar cells is capable of achieving 1 V Voc,, that passivation layers exist (e.g., Al2O3) that can support such high voltages, and that the barrier is identifying contact layers that are both passivating and carrier-selective. The characterization platform created in this project and the understanding generated using it will accelerate the progress of non-silicon PV technologies. In particular, the project will contribute to CdSeTe solar cells with Voc > 1 V and cell efficiency > 24%. Such cells provide a pathway to module-level efficiencies >23%. As CdSeTe presently competes with silicon on module cost (in $\$ $/W) and yet has significantly more room for efficiency gains, the potential for LCOE reduction is particularly large. For example, CdTe modules with an efficiency of 21% would allow an LCOE below $\$ $0.04kWh -1 in average US climates.
14 SOLAR ENERGY↗