Results for “silicon processing” — Page 57

DOE OSTI2017

Hardware-Software Complex for Measurement of Energy and Angular Distributions of Charged Particles Formed in Nuclear Reactions

A hardware-software complex for measurement of energy and angular distributions of charged particles formed in nuclear reactions is presented. Hardware and software structures of the complex, the basic set of the modular nuclear-physical apparatus of a multichannel detecting system on the basis of ΔE–E telescopes of silicon detectors, and the hardware of experimental data collection, storage, and processing are presented and described.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2017

Energy dependent forward $B \rightarrow J/\psi$ measurements in $p+p$ collisions at PHENIX

The heavy flavor studies at RHIC help improve the knowledge of the bottom/charm quark production and can test Quantum Chromodynamics (QCD). Compared to the LHC/Tevatron, the RHIC heavy flavor production originates from different partonic sub-processes and has a complementary kinematic coverage. The PHENIX forward rapidity silicon vertex detector (FVTX) provides precise determination of the event vertex, tracking and the Distance of Closest Approach (DCA) of charged tracks. This detector allows direct access to the B meson production via measurements of non-prompt J/ψ→μ + +μ - within 1.2<|y|<2.2 rapidity in p+p collisions at √s= 510 and 200 GeV. Comparison among PHENIX measurements of the B→J/ψ fraction with integrated J/ψ p T up to 5 GeV/c and higher energy results at the Tevatron and the LHC presents a smooth center of mass energy dependence from 0.2 to 13 TeV in p+p (p+$\bar{p}$) collisions. The Next-To-Leading order Perturbative QCD (NLO pQCD) calculations are in reasonable agreement with the extracted total $b\bar{b}$ cross section based on the B→J/ψ fraction measurements at PHENIX.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2017

Diffraction-Based Optical Switching with MEMS

In this article, we are presenting an overview of MEMS-based (Micro-Electro-Mechanical System) optical switch technology starting from the reflective two-dimensional (2D) and three-dimensional (3D) MEMS implementations. To further increase the speed of the MEMS from these devices, the mirror size needs to be reduced. Small mirror size prevents efficient reflection but favors a diffraction-based approach. Two implementations have been demonstrated, one using the Texas Instruments DLP (Digital Light Processing), and the other an LCoS-based (Liquid Crystal on Silicon) SLM (Spatial Light Modulator). These switches demonstrated the benefit of diffraction, by independently achieving high speed, efficiency, and high number of ports. We also demonstrated for the first time that PSK (Phase Shift Keying) modulation format can be used with diffraction-based devices. To be truly effective in diffraction mode, the MEMS pixels should modulate the phase of the incident light. We are presenting our past and current efforts to manufacture a new type of MEMS where the pixels are moving in the vertical direction. The original structure is a 32 x 32 phase modulator array with high contrast grating pixels, and we are introducing a new sub-wavelength linear array capable of a 310 kHz modulation rate

36 MATERIALS SCIENCE↗

DOE OSTI2027

Low thermal budget dopant activation in shallow junctions of implanted Si via Tunable plasma enhanced annealing

Low thermal budget (LTB) annealing has become increasingly critical for shallow junctions as semiconductor devices are scaled down. Plasma Enhanced Annealing (PEA) has emerged as a promising LTB annealing process, however its mechanisms remain unclear. In this study, arsenic and boron implanted silicon wafers were subjected to helium or argon ion bombardment generated by annealing plasmas under controlled ion energies and doses in a home-built annealing reactor. The structural and electrical changes were characterized by four-point probe measurements, secondary ion mass spectrometry, Raman spectroscopy and spectroscopic ellipsometry. A pronounced reduction in sheet resistance, accompanied by a decrease in the damage layer thickness demonstrates the surface selective annealing capability of PEA process. Comparative studies using He and Ar plasmas and related ion bombardment reveal a dependence of activation efficacy on both ion species and the dopant implantation profile. Furthermore, a multi-step annealing mechanism is proposed, consisting of an initial (low dose) structural recovery stage followed by the generation of “extended” defects and concluded at large doses by an enhanced dopant activation. The proposed annealing kinetics are thought to be controlled by ion flux, dose and energy. Finally, these results highlight PEA as an effective, surface-selective, LTB approach for shallow-dopant activation and near surface annealing, and provide mechanistic insights into PEA processes.

dopant activation↗

DOE OSTI2014

Picosecond dynamics of a silicon donor based terahertz detector device

We report the characteristics of a simple complementary metal-oxide-semiconductor compatible terahertz detector device with low response time (nanoseconds) determined using a short-pulse, high intensity free-electron laser. The noise equivalent power was 1 × 10{sup −11} W Hz{sup −1/2}. The detector has an enhanced response over narrow bands, most notably at 9.5 THz, with a continuum response at higher frequencies. Using such a device, the dynamics of donors in silicon can be explored, a system which has great potential for quantum information processing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2011

Electron-ion dynamics in laser-assisted desorption of hydrogen atoms from H-Si(111) surface

In the framework of real time real space time-dependent density functional theory we have studied the electron-ion dynamics of a hydrogen-terminated silicon surface H-Si(111) subjected to intense laser irradiation. Two surface fragments of different sizes have been used in the simulations. When the intensity and duration of the laser exceed certain levels (which depend on the wavelength) we observe the desorption of the hydrogen atoms, while the underlying silicon layer remains essentially undamaged. Upon further increase of the laser intensity, the chemical bonds between silicon atoms break as well. The results of the simulations suggest that with an appropriate choice of laser parameters it should be possible to remove the hydrogen layer from the H-Si(111) surface in a matter of a few tens of femtoseconds. We have also observed that at high laser field intensities (2-4 V/A in this work) the desorption occurs even when the laser frequency is smaller than the optical gap of the silicon surface fragments. Therefore, nonlinear phenomena must play an essential role in such desorption processes.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth

Effects of biasing voltage-current relationship on microwave plasma enhanced chemical vapor deposition of ultrananocrystalline diamond (UNCD) films on (100) silicon in hydrogen diluted methane by bias-enhanced nucleation and bias-enhanced growth processes are reported. Three biasing methods are applied to study their effects on nucleation, growth, and microstructures of deposited UNCD films. Method A employs 320 mA constant biasing current and a negative biasing voltage decreasing from −490 V to −375 V for silicon substrates pre-heated to 800 °C. Method B employs 400 mA constant biasing current and a decreasing negative biasing voltage from −375 V to −390 V for silicon pre-heated to 900 °C. Method C employs −350 V constant biasing voltage and an increasing biasing current up to 400 mA for silicon pre-heated to 800 °C. UNCD nanopillars, merged clusters, and dense films with smooth surface morphology are deposited by the biasing methods A, B, and C, respectively. Effects of ion energy and flux controlled by the biasing voltage and current, respectively, on nucleation, growth, microstructures, surface morphologies, and UNCD contents are confirmed by scanning electron microscopy, high-resolution transmission-electron-microscopy, and UV Raman scattering.

36 MATERIALS SCIENCE↗

DOE OSTI2013

Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency (Final Scientific/Technical Report)

The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm 2 using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance was analyzed and improvements implemented to the Veeco PVD-AlN prototype system to establish a specification and baseline PVD-AlN films on sapphire and in parallel the evaluation of PVD AlN on silicon substrates began. In Phase II of the project a Beta tool based on a scaled-up process module capable of depositing uniform films on batches of 4” or 6” diameter substrates in a production worthy operation was developed and qualified. In Phase III, the means to increase the throughput of the PVD-AlN sy0stem was evaluated and focused primarily on minimizing the impact of the substrate heating and cooling times that dominated the overall cycle time.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2021

Eliminating Yield Anisotropy and Enhancing Ductility in Mg Alloys by Shear Assisted Processing and Extrusion

Solid phase processing techniques such as friction stir welding, Shear assisted processing and extrusion (ShAPE)/ friction extrusion and cold spray have been successfully demonstrated as promising thermomechanical methods to produce metallic materials with enhanced performance. In this study, AZ series with and without silicon, ZK60 Mg alloys in as-received forms (as-cast or as-extruded) were processed using Shear Assisted Processing and Extrusion (ShAPE). Microstructural characterization was performed using EBSD and TEM and revealed that as compared to the feedstock materials/ billets, friction extruded Mg alloys had more uniform microstructure, equiaxed grains, finer and homogeneously distributed precipitates and chemical homogeneity. It was also observed that basal planes were not oriented parallel to extrusion axis. As a result, rod products exhibited significantly reduced (in some cases eliminated) yield asymmetry and achieved enhanced ductility, which were uncommon or difficult to attain using conventional processing techniques. In addition, modified texture likely suppressed deformation twinning under compressive deformation.

Shear Assisted Processing and Extrusion, SHAPE, ma↗

DOE OSTI2019

Detection of sub-500-μm cracks in multicrystalline silicon wafer using edge-illuminated dark-field imaging to enable thin solar cell manufacturing

High capital expenditures associated with manufacturing thin silicon wafers make it difficult for the industry to scale up and prevent novel technologies from entering the market. Thin wafers fail largely due to breakage during solar cell processing and handling. One of the root causes for breakage is sub-mm edge cracks in the silicon wafer, and these cracks cannot be reliably detected by most commercially-available crack detection tools. In this work, we first investigate the correlation between wafer thickness and critical crack length, and explain the importance of detecting sub-500-μm edge cracks as the wafer thickness is reduced. Secondly, we extend our previous work of micro-crack detection to demonstrate an edge illumination technique using a near-infrared laser to image edge cracks less than 500 μm in length in multicrystalline silicon. Thirdly, we investigate two fundamental edge illumination mechanisms based on dark-field imaging; namely, direct and vicinal illumination. We will then compare these methods to a state-of-the-art rear illumination method. The advantages and disadvantages of both illumination methods are presented and provide an in-depth analysis of light-crack interaction. In particular, we find that the robustness of vicinal illumination is due to diffuse reflectance. The diffuse reflectance has less dependence on crack configurations, while direct illumination has more dependence on the crack configurations because it utilizes specular reflectance. Our results show that our proposed prototype can detect sub-mm edge cracks in multicrystalline silicon wafers, which is an important step in enabling thin silicon wafer manufacturing.

14 SOLAR ENERGY↗

DOE OSTI2013

Nitrogen actinometry for measurement of nitrogen radical spatial distribution in large-area plasma-enhanced chemical vapor deposition

Density distributions of radicals in the large-area silicon nitride (Si{sub 3}N{sub 4}) plasma-enhanced chemical vapor deposition (PECVD) process were measured using a spatially resolvable optical emission spectrometer (SROES). To determine the qualitative distribution of a target radical, the authors used optical actinometry with nitrogen (N{sub 2}) gas as an actinometer. To compare the SROES data and process results, the thickness of the deposited Si{sub 3}N{sub 4} thin films using an ellipsometer was measured. By introducing nitrogen-based optical actinometry, the authors obtained very good agreement between the experimental results of the distributions of atomic nitrogen radical and the deposited thicknesses of Si{sub 3}N{sub 4} thin films. Based on these experimental results, the uniformity of the process plasma in the PECVD process at different applied radio frequency powers was analyzed.

36 MATERIALS SCIENCE↗

DOE OSTI2017

Epitaxial hexagonal materials on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

Matias, Vladimir↗

DOE OSTI2020

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Group-III nitride devices and systems on IBAD-textured substrates

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111>oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.

Matias, Vladimir↗

DOE OSTI2013

Vapor-liquid-solid growth of <110> silicon nanowire arrays

The epitaxial growth of <110> silicon nanowires on (110) Si substrates by the vapor-liquid-solid growth process was investigated using SiCl 4 as the source gas. A high percentage of <110> nanowires was obtained at high temperatures and reduced SiCl 4 partial pressures. Transmission electron microscopy characterization of the <110> Si nanowires revealed symmetric V-shaped {111} facets at the tip and large {111} facets on the sidewalls of the nanowires. The symmetric {111} tip faceting was explained as arising from low catalyst supersaturation during growth which is expected to occur given the near-equilibrium nature of the SiCl 4 process. Furthermore, the predominance of {111} facets obtained under these conditions promotes the growth of <110> SiNWs.

14 SOLAR ENERGY↗

DOE OSTI2022

Development of a silicon carbide ceramic based counter-flow heat exchanger by binder jetting and liquid silicon infiltration for concentrating solar power

A silicon carbide ceramic counter-flow heat exchanger with integrated headers was printed by binder jetting additive manufacturing process. Multiple phenolic binder infiltration cycles (3 or 5) followed by pyrolysis were conducted to increase the net carbon content of the printed SiC specimens. Subsequently, to attain full densification, silicon melt infiltration was used. The microstructure and mechanical properties were comprehensively characterized on the densified material. The chemical compositions and visual distribution of the various regions in the specimens were determined via scanning electron microscopy, while X-ray diffraction and synchrotron µ-computed tomography were used to provide a quantitative assessment of the volume fractions of the identified phase regions. Microhardness measurements showed dependence on the local microstructure. The fracture strength of the material was correlated with the specimen density and agreed with the reported values in the literature. High-temperature exposure at 750 °C for up to 200h did not degrade the strength for the specimens with three phenolic-binder infiltrations; however, the strengths degraded for ones with five phenolic-binder infiltrations. The associated fracture toughnesses of the specimens were ~3.4 MPam 1/2 at room temperature and 750°C, and the thermal conductivities varied from >150 W/mK at room temperature to ~45 W/mK at 750°C. Hence, this study validated the use of the binder-jetting printed SiC ceramic materials for high-temperature heat exchanges. Lastly, we also present in this work the first successful fabrication of a binder-jetting printed one-piece dense SiC ceramic heat exchanger body with unblocked channels that can be used for the flow of heat transfer fluids.

36 MATERIALS SCIENCE↗

DOE OSTI2012

Carrier localization in ZnO quantum wires

ZnO quantum wires are grown on patterned silicon substrates using plasma-assisted molecular beam epitaxy. A crystallographic etch process exposes the Si(111) planes from Si(001) substrates so that V-grooves are formed. The large misfit between the Si(111) and ZnO(0001) lattice constants leads to low ZnO film quality after growth. Subsequent thermal annealing improves the electronic and structural quality of the film substantially. In the center region of the wire we find a strong photoluminescence intensity enhancement, which arises from carrier localization in the ZnO quantum wire. Two-dimensional self-consistent calculations of the electronic structure show excellent agreement with the experimental results.

77 NANOSCIENCE AND NANOTECHNOLOGY↗