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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Fiber-Optic Imaging Probe Developed for Space Used to Detect Diabetes Through the Eye

Approximately 16 million Americans have diabetes mellitus, which can severely impair eyesight by causing cataracts, diabetic retinopathy, and glaucoma. Cataracts are 1.6 times more common in people with diabetes than in those without diabetes, and cataract extraction is the only surgical treatment. In many cases, diabetes-related ocular pathologies go undiagnosed until visual function is compromised. This ongoing pilot project seeks to study the progression of diabetes in a unique animal model by monitoring changes in the lens with a safe, sensitive, dynamic light-scattering probe. Dynamic light scattering (DLS), has the potential to diagnose cataracts at the molecular level. Recently, a new DLS fiber-optic probe was developed at the NASA Glenn Research Center at Lewis Field for noncontact, accurate, and extremely sensitive particle-sizing measurements in fluid dispersions and suspensions (ref. 1). This compact, portable, and rugged probe is free of optical alignment, offers point-and-shoot operation for various online field applications and challenging environments, and yet is extremely flexible in regards to sample container sizes, materials, and shapes. No external vibration isolation and no index matching are required. It can measure particles as small as 1 nm and as large as few micrometers in a wide concentration range from very dilute (waterlike) dispersions to very turbid (milklike) suspensions. It is safe and fast to use, since it only requires very low laser power (10 nW to 3 mW) with very short data acquisition times (2 to 10 sec).

Ansari, Rafat R.↗
NASA NTRS1994

Hubble Space Telescope Medium Deep Survey. 2: Deconvolution of Wide Field Camera field galaxy images in the 13 hour + 43 deg field

We present isophotal profiles of six faint field galaxies from some of the first deep images taken for the Hubble Space Telescope (HST) Medium Deep Survey (MDS). These have redshifts in the range z = 0.126 to 0.402. The images were taken with the Wide Field Camera (WFC) in `parallel mode' and deconvolved with the Lucy method using as the point-spread function nearby stars in the image stack. The WFC deconvolutions have a dynamic range of 16 to 20 dB (4 to 5 mag) and an effective resolution approximately less than 0.2 sec (FWHM). The multiorbit HST images allow us to trace the morphology, light profiles, and color gradients of faint field galaxies down to V approximately equal to 22 to 23 mag at sub-kpc resolution, since the redshift range covered is z = 0.1 to 0.4. The goals of the MDS are to study the sub-kpc scale morphology, light profiles, and color gradients for a large samole of faint field galaxies down to V approximately equal to 23 mag, and to trace the fraction of early to late-type galaxies as function of cosmic time. In this paper we study the brighter MDS galaxies in the 13 hour + 43 deg MDS field in detail, and investigate to what extent model fits with pure exponential disks or a(exp 1/4) bulges are justified at V approximately less than 22 mag. Four of the six field galaxies have light profiles that indicate (small) inner bulges following r(exp 1/4) laws down to 0.2 sec resolution, plus a dominant surrounding exponential disk with little or no color gradients. Two occur in a group at z = 0.401, two are barred spiral galaxies at z = 0.179 and z = 0.302, and two are rather subluminous (and edge-on) disk galaxies at z = 0.126 and z = 0.179. Our deep MDS images can detect galaxies down to V, I approximately less than 25 to 26 mag, and demonstrate the impressive potential of HST--even with its pre-refurbished optics--to resolve morphological details in galaxies at cosmologically significant distances (v approximately less than 23 mag). Since the median redshift of these galaxies is approximately less than 0.4, the HST resolution allows us to study sub kpc size scales at the galaxy, which cannot be done with stable images over wide fields from the best ground-based sites.

Windhorst, R. A.↗
DOE OSTI2023

Characterizing the intracluster light over the redshift range 0.2 < z < 0.8 in the DES-ACT overlap

ABSTRACT We characterize the properties and evolution of bright central galaxies (BCGs) and the surrounding intracluster light (ICL) in galaxy clusters identified in the Dark Energy Survey and Atacama Cosmology Telescope Survey (DES-ACT) overlapping regions, covering the redshift range 0.20 < z < 0.80. Over this redshift range, we measure no change in the ICL’s stellar content (between 50 and 300 kpc) in clusters with log10(M200m,SZ/M⊙) >14.4. We also measure the stellar mass–halo mass (SMHM) relation for the BCG+ICL system and find that the slope, β, which characterizes the dependence of M200m,SZ on the BCG+ICL stellar mass, increases with radius. The outskirts are more strongly correlated with the halo than the core, which supports that the BCG+ICL system follows a two-phase growth, where recent growth (z < 2) occurs beyond the BCG’s core. Additionally, we compare our observed SMHM relation results to the IllustrisTNG300-1 cosmological hydrodynamic simulations and find moderate qualitative agreement in the amount of diffuse light. However, the SMHM relation’s slope is steeper in TNG300-1 and the intrinsic scatter is lower, likely from the absence of projection effects in TNG300-1. Additionally, we find that the ICL exhibits a colour gradient such that the outskirts are bluer than the core. Moreover, for the lower halo mass clusters (log10(M200m,SZ/M⊙) < 14.59), we detect a modest change in the colour gradient’s slope with lookback time, which combined with the absence of stellar mass growth may suggest that lower mass clusters have been involved in growth via tidal stripping more recently than their higher mass counterparts.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗
NASA NTRS2002

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest of by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Kimble, Randy A.↗
NASA NTRS2016

Polarimetry and Flux Distribution in the Debris Disk Around HD 32297

We present high-contrast angular differential imaging (ADI) observations of the debris disk around HD32297 in H-band, as well as the first polarimetric images for this system in polarized differential imaging (PDI) mode with Subaru/HICIAO. In ADI, we detect the nearly edge-on disk at > or = 5(sigma) levels from approx. 0.45" to approx.1.7" (50-192AU) from the star and recover the spine deviation from the midplane already found in previous works. We also find for the first time imaging and surface brightness (SB) indications for the presence of a gapped structure on both sides of the disk at distances of approx. 0.75" (NE side) and approx. 0.65" (SW side). Global forward-modeling work delivers a best-fit model disk and well-fitting parameter intervals that essentially match previous results, with high-forward scattering grains and a ring located at 110AU. However, this single ring model cannot account for the gapped structure seen in our SB profiles. We create simple double ring models and achieve a satisfactory fit with two rings located at 60 and 95AU, respectively, low-forward scattering grains and very sharp inner slopes. In polarized light we retrieve the disk extending from approx. 0.25-1.6", although the central region is quite noisy and high S/N are only found in the range approx. 0.75-1.2". The disk is polarized in the azimuthal direction, as expected, and the departure from the midplane is also clearly observed. Evidence for a gapped scenario is not found in the PDI data. We obtain a linear polarization degree of the grains that increases from approx. 10% at 0.55" to approx. 25% at 1.6". The maximum is found at scattering angles of 90, either from the main components of the disk or from dust grains blown out to larger radii.

high-contrast angular differential imaging (ADI)↗
NASA NTRS2003

A Program to Detect and Characterize Extra-Solar Giant Planets

We initiated a significant hardware upgrade to the AFOE, to increase its efficiency for precise radial velocity studies to the level where we can continue to contribute usefully to extrasolar planet research on relatively bright stars. The AFOE, at a 1.5-m telescope, will of course not have the sensitivity of radial velocity instruments at larger telescopes, such as the HIRES on Keck or the Hectochelle on the MMT telescope (about to come on line). However, it has been possible to increase its efficiency for precise radial velocity studies by a factor of 4 to 5, which-combined with the large amount of telescope time available at the 1.5-m telescope-will permit us to do intensive follow-up observations of stars brighter than about 8 magnitude. The AFOE was originally designed primarily for asteroseismology using a ThAr reference. This provided useful wavelength stability over tens of minutes as required for asteroseismology, but we were unable to get a long-term (month-to-month) velocity precision better than about 15 m/s with that setup. Hence, we implemented an iodine cell as a wavelength reference for extrasolar planet studies. However, the optical design of the original AFOE did not completely span the wavelength range covered by the iodine absorption spectrum, and furthermore the optics suffered significant light loss through optical obscuration in the camera secondary. To remedy this, we replaced the AFOE grating with a new one that covered the entire iodine spectral range at somewhat lower spectral resolution, and replaced the camera with a transmitting lens. (The use of a lens was made possible by restricting the spectral range covered by the upgraded AFOE to only the iodine region.) These upgrades were successfully completed, and the instrument was tested for three nights in fall of 2002. The expected improvement in sensitivity by a factor of 4 to 5 was observed: that is, the same velocity precision as previously attained (of order 5 to 7 m/s) was now obtained on a stars that are about 4 to 5 times fainter. Unfortunately, just after installing the new AFOE optics, there was a catastrophic failure of the old Tektronix CCD. A careful investigation was made, and it was determined that the failure was probably due to too many thermal cyclings over the previous 8 years. The only solution was to purchase a new CCD. Internal funds of $16,000 were found for this purpose, and the new CCD (a thinned, back-illuminated Marconi 2K x 2K device with 13.5 micron pixels, and employing dual readout channels to keep the readout time as short as 20 seconds) was ordered, has now arrived, and is currently under test before 1 being installed in the AFOE liquid nitrogen dewar. At the same time, we expect to implement new CCD control electronics. This system should be better in many ways than the previous detector (including eliminating the need for UV flashing to maximize the quantum efficiency). We plan to install the detector on the telescope and begin operations again in April of this year.

Lindstrom, David↗
DOE OSTI2020

A Review of Existing Test Methods for Occupancy Sensors

One of the key new features of connected lighting systems (CLS) is their ability to collect data from various types of integral sensors and share that data with other lighting or building systems. Occupancy and vacancy sensors have been widely adopted as an energy-saving strategy in buildings, yet published test methods for reproducibly characterizing their performance remain few and limited in their sophistication. As a result, it has been difficult to predict their performance in a specific application, and in practice, they frequently do not meet energy-savings expectations. Occupants at times remove or otherwise bypass occupancy sensors that hinder their work or otherwise do not perform as expected, thereby compromising the sensors’ potential to reduce energy consumption. Poor performance can result from multiple causes – ranging from fundamental limitations of the sensor technology, to misconfiguration, to poor placement in the room or space. Innovative occupancy sensors, some of them combining multiple sensing technologies, have come on the market over the years, with claims of improved performance compared to their predecessors; yet in practice, their performance has led to neither high deployment nor high user satisfaction in any significant application, nor has it differed enough from the performance of previous products to necessitate a test method that facilitated comparison between them. While the performance of both common and novel occupancy sensors has been the subject of many published research articles, the test methods that have been employed for them have typically been loosely described and incorporated custom equipment or techniques that render them difficult to reproduce, or have been limited in their ability to fairly characterize devices that utilize varying sensor technology. The lack of a well-described, technology-agnostic test method that yields reproducible results across different implementations has been a barrier to the commercial success of new occupancy sensor products, as users and specifiers who have been disappointed with previous products are often unwilling to take a chance with new ones. Motivated by a desire to fairly characterize new technologies that continue to enter the market and claim not only improved occupancy detection but, in some cases, also additional capabilities (e.g., the ability to measure traffic or discern between different object types), this report presents the results of a literature review of recent published, well-described test methods for characterizing occupancy sensor performance, as well as research articles containing ad-hoc test methods. The review also identifies and consolidates the best techniques for characterizing sensor performance in indoor spaces and identifies test method gaps that need to be filled in order to evaluate emerging technologies and products.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Proton radiation effects on electronic defect states in MOCVD-grown (010) β -Ga 2 O 3

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8 × 10 13 cm –2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm –1 . The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E c -2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E c -0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E C -0.36, E C -0.63, and E C -1.09 eV were newly detected after proton irradiation, and two pre-existing states at E C -1.2 and E C -4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E c -0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

42 ENGINEERING↗
NASA NTRS2015

Techniques for Achieving Zero Stress in Thin Films of Iridium, Chromium, and Nickel

We examine techniques for achieving zero intrinsic stress in thin films of iridium, chromium, and nickel deposited by magnetron sputter deposition. The intrinsic stress is further correlated to the microstructural features and physical properties such as surface roughness and optical density at a scale appropriate to soft X-ray wavelengths. The examination of the stress in these materials is motivated by efforts to advance the optical performance of light-weight X-ray space telescopes into the regime of sub-arcsecond resolution through various deposition techniques that rely on control of the film stress to values within 10-100 MPa. A characteristic feature of the intrinsic stress behavior in chromium and nickel is their sensitivity to the magnitude and sign of the intrinsic stress with argon gas pressure and deposition rate, including the existence of a critical argon process pressure that results in zero film stress which scales linearly with the atomic mass of the sputtered species. While the effect of stress reversal with argon pressure has been previously reported by Hoffman and others for nickel and chromium, we report this effect for iridium. In addition to stress reversal, we identify zero stress in the optical functioning iridium layer shortly after island coalescence for low process pressures at a film thickness of approximately 35nm. The measurement of the low values of stress during deposition was achieved with the aid of a sensitive in-situ instrument capable of a minimum detectable level of stress, assuming a 35nm thick film, in the range of 0.40-6.0 MPa for <111> oriented crystalline silicon substrate thicknesses of 70-280 microns, respectively.

X-ray optical thin films↗
NASA NTRS2001

A High-Speed, Event-Driven, Active Pixel Sensor Readout for Photon-Counting Microchannel Plate Detectors

Silicon array readouts for microchannel plate intensifiers offer several attractive features. In this class of detector, the electron cloud output of the MCP intensifier is converted to visible light by a phosphor; that light is then fiber-optically coupled to the silicon array. In photon-counting mode, the resulting light splashes on the silicon array are recognized and centroided to fractional pixel accuracy by off-chip electronics. This process can result in very high (MCP-limited) spatial resolution for the readout while operating at a modest MCP gain (desirable for dynamic range and long term stability). The principal limitation of intensified CCD systems of this type is their severely limited local dynamic range, as accurate photon counting is achieved only if there are not overlapping event splashes within the frame time of the device. This problem can be ameliorated somewhat by processing events only in pre-selected windows of interest or by using an addressable charge injection device (CID) for the readout array. We are currently pursuing the development of an intriguing alternative readout concept based on using an event-driven CMOS Active Pixel Sensor. APS technology permits the incorporation of discriminator circuitry within each pixel. When coupled with suitable CMOS logic outside the array area, the discriminator circuitry can be used to trigger the readout of small sub-array windows only when and where an event splash has been detected, completely eliminating the local dynamic range problem, while achieving a high global count rate capability and maintaining high spatial resolution. We elaborate on this concept and present our progress toward implementing an event-driven APS readout.

Kimble, Randy A.↗
DOE OSTI2025

Low-overhead transversal fault tolerance for universal quantum computation

Fast, reliable logical operations are essential for realizing useful quantum computers. By redundantly encoding logical qubits into many physical qubits and using syndrome measurements to detect and correct errors, we can achieve low logical error rates. However, for many practical quantum error correction codes such as the surface code, owing to syndrome measurement errors, standard constructions require multiple extraction rounds—of the order of the code distance d—for fault-tolerant computation, particularly considering fault-tolerant state preparation. Here we show that logical operations can be performed fault-tolerantly with only a constant number of extraction rounds for a broad class of quantum error correction codes, including the surface code with magic state inputs and feedforward, to achieve ‘transversal algorithmic fault tolerance’. Through the combination of transversal operations7 and new strategies for correlated decoding, despite only having access to partial syndrome information, we prove that the deviation from the ideal logical measurement distribution can be made exponentially small in the distance, even if the instantaneous quantum state cannot be made close to a logical codeword because of measurement errors. We supplement this proof with circuit-level simulations in a range of relevant settings, demonstrating the fault tolerance and competitive performance of our approach. Furthermore, our work sheds new light on the theory of quantum fault tolerance and has the potential to reduce the space–time cost of practical fault-tolerant quantum computation by over an order of magnitude.

Zhou, Hengyun [QuEra Computing, Boston, MA (United↗
DOE OSTI2022

Organic Macromolecular materials for Efficient Transport Properties in Light-Energy Conversion Applications. Final Report

We are grateful for the Department of Energy for support of this research related to the improvement of power conversion efficiency of organic photovoltaic architectures over the years. As we noted at the beginning and now, the fundamental photophysical pathways that connect the absorption of light to the production of charge carriers remain elusive in spite of continuing experimental and theoretical efforts. Our investigations were directed toward gaining information about the mechanism of this ultrafast, long-range charge separation in photovoltaic systems with non-fullerene acceptors. This problem is still of high importance for the organic photovoltaics because solving this problem will allow us to minimize the contribution of the geminate recombination and trapping the charges in bound charge transfer states. Extremely low charge separation driving energy specific to non-fullerene acceptor systems reduces the energy loss in organic photovoltaic cells making them competitive with inorganic and perovskite photovoltaic systems. A major accomplishment of this study was to detail the long-range ballistic charge separation in donor-non-fullerene acceptor photovoltaic systems. We have successfully probed the spatial structure of ultrafast long-range (~40nm) ballistic charge separation in donor-non-fullerene acceptor photovoltaic system. We performed a systematic investigation of the delocalized states in their connection to the efficient long-range charge separation using the pulse pair interferometric near-field microscopy method. This method possesses unique capability of detecting coherent effects with spatial resolution of few tens of nanometers. These measurements allowed us the determination of delocalized excitations locally in a thin film photovoltaic system and to be connected to the long-range charge separation and the power conversion efficiency. We also investigated long-lived coupled triplet pairs in a singlet fission process for the possibility of concerted extraction of two electrons from triplet entangled states. New experimental and theoretical approaches of the concerted double electron extraction were carried out. The impact of this work is the development of important structure-property relationships to the design criteria of more efficient organic photovoltaic cells in accordance with the BES mission.

14 SOLAR ENERGY↗
DOE OSTI2021

Chemical Compositions of Red Giant Stars from Habitable Zone Planet Finder Spectroscopy

We have used the Habitable Zone Planet Finder (HPF) to gather high-resolution, high signal-to-noise near-infrared spectra of 13 field red horizontal branch (RHB) stars, one open cluster giant, and one very metal-poor halo red giant. The HPF spectra cover the 0.81–1.28 μm wavelength range of the zyJ bands, partially filling the gap between the optical (0.4–1.0 μm) and infrared (1.5–2.4 μm) spectra already available for the program stars. We derive abundances of 17 species from LTE-based computations involving equivalent widths and spectrum syntheses, and estimate abundance corrections for the species that are most affected by departures from LTE in RHB stars. Generally good agreement is found between HPF-based metallicities and abundance ratios and those from the optical and infrared spectral regions. Light element transitions dominate the HPF spectra of these red giants, and HPF data can be used to derive abundances from species with poor or no representation in optical spectra (e.g., C i, P i, S i, K i). Attention is drawn to the HPF abundances in two field solar-metallicity RHB stars of special interest: one with an extreme carbon isotope ratio, and one with a rare, very large lithium content. The latter star is unique in our sample in exhibiting very strong He i 10830 Å absorption. The abundances of the open cluster giant concur with those derived from other wavelength regions. Detections of C i and S i in HD 122563 are reported, yielding the lowest metallicity determination of [S/Fe] from more than one multiplet.

47 OTHER INSTRUMENTATION↗
NASA NTRS2019

PAH Products and Processing by Different Energy Sources

Isoviolanthrene (C34H18), a polycyclic aromatic hydrocarbon (PAH) molecule, was studied via matrix isolation in argon and water at 20 K. Infrared spectroscopy was performed in situ where samples were irradiated using ultraviolet light. Experimental spectra were compared to theoretical spectra for vibrational band assignment, determination of the corresponding A-values, and photoproduct identification. Isoviolanthrene was also deposited as a thin film and irradiated with different energy sources: ultraviolet photons (10.2 eV), soft electrons (1.5 keV), protons (1.5 MeV), and He+ particles (1.5 MeV), to understand the effects of different energy sources on a PAH. Anions and cations of soviolanthrene were produced as a result of UV photolysis in an argon matrix. Hydrogenand oxygen-rich aromatic photoproducts were produced by ultraviolet photons when isoviolanthrene was isolated in a water matrix. The irradiated PAH thin films results were dependent on the energy source. Irradiation with ultraviolet photons yielded a broad underlying feature centered at 9.6 μm, while bombardment with soft electrons gave a broad feature centered at 7.7 μm. In the case of proton bombardment, no broad feature was detected, in contrast with He+ bombardment that destroyed most of the isoviolanthrene and produced broad features in the C-Hoop and C–H stretching regions. A comparison of astronomical IR emission observations with our experimental results in the mid-infrared range has revealed a similarity between the observed plateaus and the broad features produced by our experiments.

astrochemistry – infrared: ISM – methods: laborato↗
DOE OSTI2025

Atomic-scale imaging of frequency-dependent phonon anisotropy

Directly visualizing vibrational anisotropy in individual phonon modes is essential for understanding a wide range of intriguing optical, thermal and elastic phenomena in materials. Although conventional optical and diffraction techniques have been used to estimate vibrational anisotropies, they fall short in achieving the spatial and energy resolution necessary to provide detailed information. Here, we introduce a new form of momentum-selective electron energy-loss spectroscopy, which enables the element-resolved imaging of frequency- and symmetry-dependent vibrational anisotropies with atomic resolution. Vibrational anisotropies manifest in different norms of orthogonal atomic displacements, known as thermal ellipsoids. Using the centrosymmetric strontium titanate as a model system, we observed two distinct types of oxygen vibrations with contrasting anisotropies: oblate thermal ellipsoids below 60 meV and prolate ones above 60 meV. In non-centrosymmetric barium titanate, our approach can detect subtle distortions of the oxygen octahedra by observing the unexpected modulation of q-selective signals between apical and equatorial oxygen sites near 55 meV, which originates from reduced crystal symmetry and may also be linked to ferroelectric polarization. These observations are quantitatively supported by theoretical modelling, which demonstrates the reliability of our approach. The measured frequency-dependent vibrational anisotropies shed new light on the dielectric and thermal behaviours governed by acoustic and optical phonons. Furthermore, the ability to visualize phonon eigenvectors at specific crystallographic sites with unprecedented spatial and energy resolution opens new avenues for exploring dielectric, optical, thermal and superconducting properties.

Ferroelectrics and multiferroics↗
NASA NTRS2006

Semiconductor Bolometers Give Background-Limited Performance

Semiconductor bolometers that are capable of detecting electromagnetic radiation over most or all of the infrared spectrum and that give background-limited performance at operating temperatures from 20 to 300 K have been invented. The term background-limited performance as applied to a bolometer, thermopile, or other infrared detector signifies that the ability to detect infrared signals that originate outside the detector is limited primarily by thermal noise attributable to the background radiation generated external to the bolometer. The signal-to-noise ratios and detectivities of the bolometers and thermopiles available prior to this invention have been lower than those needed for background-limited performance by factors of about 100 and 10, respectively. Like other electrically resistive bolometers, a device according to the invention exhibits an increase in electrical resistance when heated by infrared radiation. Depending on whether the device is operated under the customary constant- current or constant-voltage bias, the increase in electrical resistance can be measured in terms of an increase in voltage across the device or a decrease in current through the device, respectively. In the case of a semiconductor bolometer, it is necessary to filter out visible and shorter-wavelength light that could induce photoconductivity and thereby counteract all or part of the desired infrared- induced increase in resistance. The basic semiconductor material of a bolometer according to the invention is preferably silicon doped with one or more of a number of elements, each of which confers a different variable temperature coefficient of resistance. Suitable dopants include In, Ga, S, Se, Te, B, Al, As, P, and Sb. The concentration of dopant preferably lies in the range between 0.1 and 1,000 parts per billion.

Goebel, John↗
DOE OSTI2023

Decadal survival of tropical pioneer seeds in the soil seed bank is accompanied by fungal infection and dormancy release

Pioneer trees require high-light environments for successful seedling establishment. Consequently, seeds of these species often persist in the soil seed bank (SSB) for periods ranging from several weeks to decades. How they survive despite extensive pressure from seed predators and soil-borne pathogens remains an intriguing question. Here this study aims to test the hypotheses that decades-old seeds collected from the SSB in a lowland tropical forest remain viable by (i) escaping infection by fungi, which are major drivers of seed mortality in tropical soils, and/or (ii) maintaining high levels of seed dormancy and seed coat integrity when compared to inviable seeds. We collected seeds of Trema micrantha and Zanthoxylum ekmanii at Barro Colorado Island, Panama, from sites where adult trees previously occurred in the past 30 years. We used carbon dating to measure seed age and characterized seed coat integrity, seed dormancy and fungal communities. Viable seeds from the SSB ranged in age from 9 to 30 years for T. micrantha, and 5 to 33 years for Z. ekmanii. We found no evidence that decades-old seeds maintain high levels of seed dormancy or seed coat integrity. Fungi were rarely detected in fresh seeds (no soil contact), but phylogenetically diverse fungi were detected often in seeds from the SSB. Although fungal infections were more commonly detected in inviable seeds than in viable seeds, a lack of differences in fungal diversity and community composition between viable and inviable seeds suggested that viable seeds are not simply excluding fungal species to survive long periods in the SSB. Synthesis. Our findings reveal the importance of a previously understudied aspect of seed survival, where the impact of seed–microbial interactions may be critical to understand long-term persistence in the SSB.

54 ENVIRONMENTAL SCIENCES↗