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This presentation discusses project goals, including: develop new UWBG ternary nitride materials for radiation tolerant neutron detectors, understand stability and defect behavior, and demonstrate device functionality.
Surface reconstruction of Ni-rich layered oxides (NLO) degrades the cycling stability and safety of high-energy-density lithium-ion batteries (LIBs), which challenges typical surface-modification approaches to build a robust interface with electrochemical activity. Here, a strategy of leveraging the low-strain analogues of Li- and Mn-rich layered oxides (LMR) to reconstruct a stable surface on the Ni-rich layered cathodes is proposed. The new surface structure not only consists of a gradient chemical composition but also contains a defect-rich structure regarding the formation of oxygen vacancies and cationic ordering, which can simultaneously facilitate lithium diffusion and stabilize the crystal structure during the (de)lithiation. These features in the NLO lead to a dramatic improvement in electrochemical properties, especially the cyclability under high voltage cycling, exhibiting the 30% increase in capacity retention after 200 cycles at the current density of 1 C (3.0-4.6 V). We report the findings offer a facile and effective way to regulate defect chemistry and surface structure in parallel on Ni-rich layered structure cathodes to achieve high-energy density LIBs.
We report investigations of the synthesis, structure, and properties of new materials for spintronic applications integrated onto silicon substrates. Our primary focus is materials with very high, negative, intrinsic spin polarization of the density of states at the Fermi level. We have developed a new synthesis method for Fe 3 O 4 thin films through selective oxidation of Fe, resulting in smooth, low-defect density films. We have synthesized Fe4N films and shown that they preferentially oxidize to Fe 3 O 4 . When integrated into magnetic tunnel junctions consisting of Fe4N / AlOx / Fe, oxidation at the Fe4N / AlOx interface creates Fe 3 O 4 , leading to negative tunneling magnetoresistance (TMR). Oxidation of Fe in nominally symmetric CoFe / AlOx / CoFe also produces Fe 3 O 4 and negative TMR under selected oxidation conditions.
This project focuses on the development of stimuli-responsive hybrid multifunctional materials. We place emphasis on the design, synthesis, structural characterization, evaluation of functional properties (electronic, thermal and optical) of several (1-x)Cu 2 Se/(x)WBGS hierarchical bulk composites between Cu 2 Se, a narrow band gap semiconductor (NBGS), with a range of wider band gap semiconductors (WBGS) such as CuMSe 2 (M = Al, Ga, In, Fe, Cr) and Cu 4 TiSe 4 . Cu2Se is a well-studied NBGS with excellent thermoelectric properties (high electrical conductivity, large thermopower, etc.) while CuMSe 2 and Cu 4 TiSe 4 are high performance solar absorber materials (large band gap, large absorption coefficient, etc.). Our primary objectives are (i) to demonstrate the ability to integrate dissimilar functional properties such as large optical absorption coefficient and high electronic conductivity, within (1-x)Cu 2 Se/(x)WBGS composite; and (ii) to establish the correlation between the hierarchical structural entanglement of Cu 2 Se with WBGS (CuMSe 2 or Cu 4 TiSe 4 ) phase, the interactions between native electronic defects within the coexisting phases in the resulting (1-x)Cu 2 Se/(x)WBGS bulk composites , and the impacts on their electronic conductivity, thermal transport and optical properties.
This study reports successful deposition of high quantum efficiency (QE) bialkali antimonide K2CsSb photocathodes on graphene films. The results pave the way for an ultimate goal of encapsulating technologically relevant photocathodes for accelerator technology with an atomically thin protecting layer to enhance lifetime while minimizing QE losses. A QE of 17% at approximate to 3.1 eV (405 nm) is the highest value reported so far on graphene substrates and is comparable to that obtained on stainless steel and nickel reference substrates. The spectral responses of the photocathodes on graphene exhibit signature features of K2CsSb including the characteristic absorption at approximate to 2.5 eV. Materials characterization based on X-ray fluorescence and X-ray diffraction reveals that the composition and crystal quality of these photocathodes deposited on graphene is comparable to those deposited on a reference substrate. Quantitative agreement between optical calculations and QE measurements for the K2CsSb on free suspended graphene and a graphene-coated metal substrate further confirms the high-quality interface between the photocathodes and graphene. Finally, a correlation between the QE and graphene quality as characterized by Raman spectroscopy suggests that a lower density of atomistic defects in the graphene films leads to higher QE of the deposited K2CsSb photocathodes.
The run-out phenomenon was observed in Ag-Cu-Zr active braze joints made between the alumina ceramic and Kovar™ base material. Run-out introduces a significant yield loss by generating functional and/or cosmetic defects in brazements. A prior study identified a correlation between run-out and the aluminum (Al) released by the reduction/oxidation and the latter’s reaction with the Kovar™ base material. A study was undertaken to understand the fundamental principles of run-out by examining the interface reaction between Ag-xAl filler metals (x=2, 5, and 10 wt.%) and Kovar™ base material. Sessile drop samples were fabricated using brazing temperatures of 965°C or 995°C and times of 5 min or 20 min. The correlation was made between the degree of wetting-and-spreading by the sessile drops and the run-out phenomenon. Wetting-and-spreading increased with Al content (x) of the Ag-xAl filler metal, but was largely insensitive to the brazing process parameters. The increased Al concentration resulted in higher Al contents of the (Fe, Ni, Co) x Al y reaction layer. Run-out was predicted when the filler metal has a locally-elevated, Al content exceeding 2 – 5 wt.%. Lastly, several mitigation strategies were proposed, based upon these findings.
Molecular dynamics simulations were performed to understand the differences in the response of single crystal and nanocrystalline ?-LiAlO2 to energy deposition by 10 keV Li recoils. The simulations are performed at 573 K and focus on the damage production in the absence of thermal annealing. The grain boundaries in the nanocrystals are found to be amorphous. Analyses of the fate of the beam ions show that the amorphous grain boundaries and differently oriented nanograins increase the number of back-scattered ions and decrease the number of transmitted ions. Damaged regions protruding from the grain boundaries provide a direct evidence of the role of the grain boundaries as scattering centers in collision cascades. The simulations show that the defect density produced in the nanocrystals is about twice that in the single crystals. In both samples, Li defects account for 70% of the defects, demonstrating that LiO4 tetrahedra is much more susceptible to damage than AlO4 tetrahedra. Furthermore, Li defects occur preferentially near grain boundaries. Diffusion simulations confirm the limited thermal diffusion of defects at 573 K, effectively separating the damage production from thermal annealing in the irradiation simulations. Nevertheless, the mean square displacements of grain boundary defects are found to be larger than lattice defects and surface defects.
It has been shown that localized and semi-localized stationary states exist near a thin structured defect layer between a linear medium and a Kerr nonlinear medium. Localized states are described by a monotonically decreasing amplitude of the field on the both sides of the interface between the media. Semilocalized states are characterized by the field that has the form of a standing wave in the linear medium and decreases monotonically in the nonlinear medium. Kerr media with self-focusing and defocusing are considered. The proposed model is described by a system of the linear and nonlinear Schrödinger equations with a specific potential simulating a thin structured defect layer. It has been shown that localized and semi-localized states exist in different energy ranges in the case of contact of the linear medium with the self-focusing medium. In the case of contact of the linear medium with the defocusing medium, two types of localized and semi-localized states differing in energy and field profile can exist in different energy ranges. In particular cases, expressions for energies of states of these types have been obtained and conditions of their applicability have been indicated.
Temperature- and irradiation-assisted failure mechanisms in miscible phase boundaries are clarified via atomistic calculations. We first establish the temperature-dependent brittle-to-ductile transition in U–Zr miscible phase boundaries. Our results confirm that these boundaries are mostly brittle at low temperatures and ductile at elevated temperatures. We then investigate the changes induced by irradiation on the fracture mechanisms in such phase boundaries. The irradiation-induced defect accumulation follows a multi-stage process that starts with the accumulation of isolated small dislocation loops before transitioning to the saturation and growth of larger dislocation loops and end up with a reorganization into forest dislocations. The accumulation of loops is the primary feature to participate in the delineation between brittle and ductile interfacial fracture in irradiated phase boundaries. At low damage levels, radiation defect interactions with the crack tip are limited and U–Zr miscible boundaries fail through the emission of dislocations ahead of the crack tip followed by brittle cleavage in agreement with the classical Griffith’s criterion for crack stability. At higher damage levels, the failure mode transitions from brittle crack growth to ductile void growth. In this case, the microcrack tip is blunted by the high density of pre-existing, radiation-induced defects in the vicinity of the crack. This interaction leads to the development and growth of a cavity at the interface as opposed to interfacial cleavage.
Ferroelectric Al 1−x B x N thin films are grown on highly doped and plasma treated (100) n-type Si. We demonstrate ferroelectricity for x = < 0.01, 0.02, 0.06, 0.08, 0.13, and 0.17 where the n-type Si is both the substrate and bottom electrode. Polarization hysteresis reveals remanent polarization values between 130 and 140 μC/cm 2 and coercive field values as low as 4 MV/cm at 1 Hz with low leakage. The highest resistivity and most saturating hysteresis occurs with B contents between x = 0.06 and 0.13. We also demonstrate the impact of substrate plasma treatment time on Al 1−x B x N crystallinity and switching. Cross-sectional transmission electron microscopy and electron energy loss spectra reveal an amorphous 3.5 nm SiN x layer at the Al 1−x B x N interface post-plasma treatment and deposition. The first ~ 5 nm of Al 1−x B x N is crystallographically defective. Using the n-type Si substrate, we demonstrate Al 1−x B x N thickness scaling to 25 nm via low-frequency hysteresis and CV. Serving as the bottom electrode and substrate, the n-type Si enables a streamlined growth process for Al 1−x B x N for a wide range of Al 1−x B x N compositions and layer thicknesses.
Herein, an FeCrBSi coating was fabricated via plasma spray on AISI1045 steel, and subsequently, a gas tungsten arc welding (GTA) process was employed to remelt the coating. The microstructure, microhardness, fracture toughness and surface roughness of the coating before and after remelting were investigated, as well as the wear resistance was tested by a UMT-3-type sliding wear apparatus. The results showed that, upon remelting, most defects in the as-sprayed coating were effectively eliminated, the surface roughness decreased by 43%, and the coating–substrate interface bonding changed from mechanical to metallurgical. The phase composition of the as-sprayed coating was primarily α-Fe and a small amount of hard Fe{sub 3}B phase, while the remelted coating consisted of α-Fe and (Fe,Cr){sub 23}C{sub 6} and a small quantity of CrB. In addition, remelting the coating was found to induce a 287.6% increase in the fracture toughness, a 33.4% increase in the average microhardness, and a 47.5% decrease in the wear volume, while the failure mechanism changed from abrasive wear to fatigue wear upon remelting. Therefore, GTA remelting of plasma-sprayed coating was found to be a feasible method to obtain a coating with good wear resistance.
Radiation effects in materials often compound and accelerate other detrimental phenomena such as embrittlement, oxidation and creep. However, irradiation can also decrease the oxidation rate, for instance with ZrNb alloys nuclear fuel cladding. In this study, we rationalize this observation on Zr-0.5Nb alloy by introducing a mechanism based on oxide space charge modification, resulting from irradiation enhanced Nb clustering. Here, this mechanism is investigated using a multiscale approach: from the macroscale, to determine post-irradiation oxidation kinetics, to the atomic scale, using in-situ atom probe tomography sample oxidation, to observe elemental solute redistribution across the oxide/metal interface. The mechanism is further supported by high resolution transmission electron microscopy characterization and density functional theory calculations. A point defect model is proposed to account for oxide space charge effects and their changes under irradiation. This integrated, multiscale experimental and modeling approach challenges the current paradigm on irradiation effects and how they can potentially improve materials performance in extreme environments.
Here, orientation-dependent plasticity in zirconium (Zr)-alloy, which is produced through ultrasonic additive manufacturing (UAM) with subsequent hot-isostatic pressing (HIP), was analyzed by recording electron backscattered diffraction (EBSD) data during in-situ micromechanical testing. Three (0001) plane orientations of a hexagonal close-packed (HCP) structure were analyzed parallel to (1) the rolling direction [X||tensile direction (TD)], (2) the build direction [Z], and (3) the transverse direction [Y]. The analysis revealed that the grains with ~<0001>||TD show twin-dominant plasticity with three variants from {10 $\overline{1}$ 2}<$\overline{1}$ 011>; minor slipping with ($10\overline{1}$ 1)[$\overline{2}$ 113], and ($11\overline{2}$ 2)[$\overline{1} \overline{1}$ 23] pyramidal slip has also been observed. However, grains with orientation ~<0001>⊥TD are mainly sensitive to dislocations assisted plasticity-leading to orientation gradients formation. Furthermore, the neck formation was identified as originating from higher populated micro-crack locations and their association with localized plasticity at defect points in the UAM material. These results demonstrate that minimization of impurities to enable grain growth across prior foil interfaces makes HIP an effective methodology for producing Zr plate, with deformation characteristics expected for conventionally manufactured Zr.
In mesoporous organo-halide perovskite solar cells, the coexistence of tetragonal phase and cubic phase in the perovskite layer is found to result in strained crystal structure at the mesoporous TiO 2 (mp-TiO 2 )/perovskite heterointerface. This results in structural defects pinholes, grain boundaries, and interfacial porosity which is detrimental towards photovoltaic performance and device stability. The strain at the interface originates from the lattice mismatch between the mp-TiO 2 nanoparticles (NPs) and perovskite. Here, a transformative approach is demonstrated to realize relaxed and high purity tetragonal phase MAPbI 3 (RP) near the mp-TiO 2 interface region. This approach involves inserting a ~2 nm lattice matched buffer layer of cubic CsPbBr 3 between mp-TiO 2 NPs and MAPbI 3 , which serves as a template for epitaxial growth for top MAPbI 3 . As a result, the solar cell with relaxed MAPbI3 shows a power conversion efficiency (PCE) of 22.12% with significantly enhanced environmental, light, and thermal stability.
Guided wave was widely studied for plate and pipe due to the great application area. Guided wave has advantage on long distance inspection for an inaccessible area and apart from transducer. Quite often shrink fit structures were found in nuclear power facilities. In this paper, two pipes were designed with perfect shrink fit condition for Stainless Steel 316. The displacement distribution was calculated with boundary condition. The interface wave propagation pattern was analyzed by the numerical modeling. The experimental results show a possibility of weld delamination and defect detection.
The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1−x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ{sub B} ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ{sub B} ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ{sub B} ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.
The performance of silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is greatly enhanced by a post-oxidation anneal in NO. These anneals greatly improve effective channel mobilities and substantially decrease interface trap densities. In this work, we investigate the effect of NO anneals on the interface density of states through density functional theory (DFT) calculations and electrically detected magnetic resonance (EDMR) measurements. EDMR measurements on 4H-silicon carbide (4H-SiC) MOSFETs indicate that NO annealing substantially reduces the density of near interface SiC silicon vacancy centers: it results in a 30-fold reduction in the EDMR amplitude. The anneal also alters post-NO anneal resonance line shapes significantly. EDMR measurements exclusively sensitive to interface traps with near midgap energy levels have line shapes relatively unaffected by NO anneals, whereas the measurements sensitive to defects with energy levels more broadly distributed in the 4H-SiC bandgap are significantly altered by the anneals. Using DFT, we show that the observed change in EDMR linewidth and the correlation with energy levels can be explained by nitrogen atoms introduced by the NO annealing substituting into nearby carbon sites of silicon vacancy defects.
We demonstrate conditions that give rise to cave-like features commonly found in dissolving cliffsides with a minimal two-phase physical model. Alcoves that are wider at the top and tapered at the bottom, with sharp-edged ceilings and sloping floors, are shown to develop on vertical solid surfaces dissolving in aqueous solvents. As evident from descending plumes, sufficiently large indentations evolve into alcoves as a result of the faster dissolution of the ceiling due to a solutal Rayleigh–Bénard density inversion instability. In contrast, defects of size below the boundary layer thickness set by the critical Rayleigh number smooth out, leading to stable planar interfaces. Furthermore, the ceiling recession rate and the alcove opening area evolution are shown to be given to first-order by the critical Rayleigh number. By tracking passive tracers in the fluid phase, we show that the alcoves are shaped by the detachment of the boundary layer flow and the appearance of a pinned vortex at the leading edge of the indentations. The attached boundary layer past the developing alcove is then found to lead to rounding of the other sides and the gradual sloping of the floor.