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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,027 records · Page 57
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Multimodal hard x-ray nanoprobe facility by nested Montel mirrors aimed for 40nm resolution at Taiwan Photon Source

The hard X-ray nanoprobe facility at Taiwan Photon Source (TPS) provides multimodal X-ray detections, including XRF, XAS, XEOL, projection microscope, CDI, etc. Resulting from the large numerical aperture obtained by utilizing nested Montel mirrors, the beamline with a moderate length 75 meters can conduct similar performance with those beamlines longer than 100 meters. The mirrors are symmetrically placed with a 45 degrees cut. The beamline optics is thus designed to take the advantage of the symmetry of mirrors such that a round focal spot is accomplished. The size and the divergence of the focus spot are simulated around 40 nm and 6.29 mrad, respectively. The whole facility including the beamline and the stations will be operated under vacuum to preserve the photon coherence as well as to prevent the system from unnecessary environmental interference. A SEM in close cooperation with laser interferometers is equipped to precisely locate the position of the sample. This endstation is scheduled to be commissioned in the fall of 2016.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Hard x-ray nanofocusing using total-reflection zone plates

A total-reflection zone plate (TRZP), which is a reflective grating that generates a line focus of hard X-rays, was developed. Newly designed TRZPs, introducing a laminar grating concept, were fabricated with various zone parameters. The focusing performances with regard to the beam size and the diffraction efficiency were evaluated using synchrotron radiation X-rays of 10 keV energy. Although the beam sizes measured are insufficient in comparison with the ideal value, the maximum diffraction efficiency, measured at 20%, exceeds the limitations of conventional TRZPs based on a binary grating.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Measurement of valence-band offset at native oxide/BaSi{sub 2} interfaces by hard x-ray photoelectron spectroscopy

Undoped n-type BaSi{sub 2} films were grown on Si(111) by molecular beam epitaxy, and the valence band (VB) offset at the interface between the BaSi{sub 2} and its native oxide was measured by hard x-ray photoelectron spectroscopy (HAXPES) at room temperature. HAXPES enabled us to investigate the electronic states of the buried BaSi{sub 2} layer non-destructively thanks to its large analysis depth. We performed the depth-analysis by varying the take-off angle (TOA) of photoelectrons as 15°, 30°, and 90° with respect to the sample surface and succeeded to obtain the VB spectra of the BaSi{sub 2} and the native oxide separately. The VB maximum was located at −1.0 eV from the Fermi energy for the BaSi{sub 2} and −4.9 eV for the native oxide. We found that the band bending did not occur near the native oxide/BaSi{sub 2} interface. This result was clarified by the fact that the core-level emission peaks did not shift regardless of TOA (i.e., analysis depth). Thus, the barrier height of the native oxide for the minority-carriers in the undoped n-BaSi{sub 2} (holes) was determined to be 3.9 eV. No band bending in the BaSi{sub 2} close to the interface also suggests that the large minority-carrier lifetime in undoped n-BaSi{sub 2} films capped with native oxide is attributed not to the band bending in the BaSi{sub 2}, which pushes away photogenerated minority carriers from the defective surface region, but to the decrease of defective states by the native oxide.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Monitoring system for testing the radiation hardness of a KINTEX-7 FPGA

A much more efficient Ring Imaging Cherenkov sub-detector system will be rebuilt in the second long shutdown of Large Hadron Collider for the LHCb experiment. Radiation-hard electronic components together with Commercial Off-The-Shelf ones will be used in the new Cherenkov photon detection system architecture. An irradiation program was foreseen to determine the radiation tolerance for the new electronic devices, including a Field Programmable Gate Array from KINTEX-7 family of XILINX. An automated test bench for online monitoring of the XC7K70T KINTEX-7 device operation in radiation conditions was designed and implemented by the LHCb Romanian group.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation

Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays — such as laser-generated plasmas — is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Tunable hard X-ray spectrometer utilizing asymmetric planes of a quartz transmission crystal

A Cauchois type hard x-ray spectrometer was developed that utilizes the (301) diffraction planes at an asymmetric angle of 23.51° to the normal to the surface of a cylindrically curved quartz transmission crystal. The energy coverage is tunable by rotating the crystal and the detector arm, and spectra were recorded in the 8 keV to 20 keV range with greater than 2000 resolving power. The high resolution results from low aberrations enabled by the nearly perpendicular angle of the diffracted rays with the back surface of the crystal. By using other asymmetric planes of the same crystal and rotating to selected angles, the spectrometer can operate with high resolution up to 50 keV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Evaluation of band offset at amorphous-Si/BaSi{sub 2} interfaces by hard x-ray photoelectron spectroscopy

The 730 nm-thick undoped BaSi{sub 2} films capped with 5 nm-thick amorphous Si (a-Si) intended for solar cell applications were grown on Si(111) by molecular beam epitaxy. The valence band (VB) offset at the interface between the BaSi{sub 2} and the a-Si was measured by hard x-ray photoelectron spectroscopy to understand the carrier transport properties by the determination of the band offset at this heterointerface. We performed the depth-analysis by varying the take-off angle of photoelectrons as 15°, 30°, and 90° with respect to the sample surface to obtain the VB spectra of the BaSi{sub 2} and the a-Si separately. It was found that the barrier height of the a-Si for holes in the BaSi{sub 2} is approximately −0.2 eV, whereas the barrier height for electrons is approximately 0.6 eV. This result means that the holes generated in the BaSi{sub 2} layer under solar radiation could be selectively extracted through the a-Si/BaSi{sub 2} interface, promoting the carrier separation in the BaSi{sub 2} layer. We therefore conclude that the a-Si/BaSi{sub 2} interface is beneficial for BaSi{sub 2} solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

A simple method to prevent hard X-ray-induced preheating effects inside the cone tip in indirect-drive fast ignition implosions

During fast-ignition implosions, preheating of inside the cone tip caused by hard X-rays can strongly affect the generation and transport of hot electrons in the cone. Although indirect-drive implosions have a higher implosion symmetry, they cause stronger preheating effects than direct-drive implosions. To control the preheating of the cone tip, we propose the use of indirect-drive fast-ignition targets with thicker tips. Experiments carried out at the ShenGuang-III prototype laser facility confirmed that thicker tips are effective for controlling preheating. Moreover, these results were consistent with those of 1D radiation hydrodynamic simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Dual-array valence emission spectrometer (DAVES): A new approach for hard x-ray photon-in photon-out spectroscopies

CHESS has developed and successfully deployed a novel Dual Array Valence Emission Spectrometer (DAVES) for high energy resolution, hard x-ray spectroscopy. DAVES employs the simplest method for scanning multiple spherical crystals along a Rowland Circle. The new design achieves unique 2-color collection capability and is built to take special advantage of pixel array detectors. Our initial results show why these detectors greatly improve data quality. The presentation emphasizes flexibility of experimental design offered by DAVES. Prospects and benefits of 2-color spectroscopy are illustrated and discussed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Design and throughput simulations of a hard x-ray split and delay line for the MID station at the European XFEL

A hard X-ray Split and Delay Line (SDL) under development for the Materials Imaging and Dynamics (MID) station at the European X-Ray Free-Electron Laser (XFEL.EU) is presented. This device will provide pairs of X-ray pulses with a variable time delay ranging from −10 ps to 800 ps in a photon energy range from 5 to 10 keV. Throughput simulations in the SASE case indicate a total transmission of 1.1% or 3.5% depending on the operation mode. In the self-seeded case of XFEL.EU operation simulations indicate that the transmission can be improved to more than 11%.

43 PARTICLE ACCELERATORS↗
DOE OSTI2016

Hard x-ray photoelectron spectroscopy equipment developed at beamline BL46XU of SPring-8 for industrial researches

Hard X-ray photoelectron spectroscopy (HAXPES) is a powerful tool for investigating the chemical and electronic states of bulk and buried interface in a non-destructive manner due to the large probing depth of this technique. At BL46XU of SPring-8, there are two HAXPES systems equipped with different electron spectrometers, which can be utilized appropriately according to the purpose in various industrial researches. In this article, these systems are outlined, and two typical examples of HAXPES studies performed by them are presented, which focus on the silicidation at Ni/SiC interface and the energy distribution of interface states at SiO{sub 2}/a-InGaZnO.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Structure determination of a multilayer with an island-like overlayer using hard x-ray photoelectron spectroscopy

We use hard X-ray photoelectron spectroscopy (HAXPES) to obtain the surface structure of a multilayer Au/SiO{sub 2}/Si substrate sample with an island-like overlayer. Photoelectron intensities are measured as a function of incident photon energy (PE) and take-off angle (TOA, measured from the sample surface). The Au layer coverage and Au and SiO{sub 2} layer thicknesses are obtained by the PE dependence, and are used for the following TOA analysis. The Au island lateral width in the cross section is obtained by the TOA dependence, including information about surface roughness, in consideration of the island shadowing at small TOAs. In both cases, curve-fitting analysis is conducted. The surface structure, which consists of layer thicknesses, overlayer coverage and island width, is determined nondestructively by a combination of PE and TOA dependent HAXPES measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Microstructure and composition analysis of low-Z/low-Z multilayers by combining hard and resonant soft X-ray reflectivity

Microstructure and composition analysis of periodic multilayer structure consisting of a low electron density contrast (EDC) material combination by grazing incidence hard X-ray reflectivity (GIXR), resonant soft X-ray reflectivity (RSXR), and transmission electron microscopy (TEM) are presented. Measurements of reflectivity at different energies allow combining the sensitivity of GIXR data to microstructural parameters like layer thicknesses and interfacing roughness, with the layer composition sensitivity of RSXR. These aspects are shown with an example of 10-period C/B{sub 4}C multilayer. TEM observation reveals that interfaces C on B{sub 4}C and B{sub 4}C on C are symmetric. Although GIXR provides limited structural information when EDC between layers is low, measurements using a scattering technique like GIXR with a microscopic technique like TEM improve the microstructural information of low EDC combination. The optical constants of buried layers have been derived by RSXR. The derived optical constants from the measured RSXR data suggested the presence of excess carbon into the boron carbide layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Quantitative spectromicroscopy from inelastically scattered photoelectrons in the hard X-ray range

We demonstrate quantitative, highly bulk-sensitive x-ray photoelectron emission microscopy by analysis of inelastically scattered photoelectrons in the hard X-ray range, enabling elemental depth distribution analysis in deeply buried layers. We show results on patterned structures used in electrical testing of high electron mobility power transistor devices with an epitaxial Al{sub 0.25}Ga{sub 0.75}N channel and a Ti/Al metal contact. From the image series taken over an energy range of up to 120 eV in the Ti 1s loss feature region and over a typical 100 μm field of view, one can accurately retrieve, using background analysis together with an optimized scattering cross-section, the Ti depth distribution from 14 nm up to 25 nm below the surface. The method paves the way to multi-elemental, bulk-sensitive 3D imaging and investigation of phenomena at deeply buried interfaces and microscopic scales by photoemission.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of process parameters on hardness, temperature profile and solidification of different layers processed by direct metal laser sintering (DMLS)

In DMLS process objects are fabricated layer by layer from powdered material by melting induced by a controlled laser beam. Metallic powder melts and solidifies to form a single layer. Solidification map during layer formation is an important route to characterize micro-structure and grain morphology of sintered layer. Generally, solidification leads to columnar, equiaxed or mixture of these two types grain morphology depending on solidification rate and thermal gradient. Eutectic or dendritic structure can be formed in fully equiaxed zone. This dendritic growth has a large effect on material properties. Smaller dendrites generally increase ductility of the layer. Thus, materials can be designed by creating desired grain morphology in certain regions using DMLS process. To accomplish this, hardness, temperature distribution, thermal gradient and solidification cooling rate in processed layers will be studied under change of process variables by using finite element analysis, with specific application to Ti-6Al-4V.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Electronic structure and magnetic anisotropy of L1{sub 0}-FePt thin film studied by hard x-ray photoemission spectroscopy and first-principles calculations

We have studied the electronic structure of the L1{sub 0} ordered FePt thin film by hard x-ray photoemission spectroscopy (HAXPES), cluster model, and first-principles calculations to investigate the relationship between the electronic structure and perpendicular magneto-crystalline anisotropy (MCA). The Fe 2p core-level HAXPES spectrum of the ordered film revealed the strong electron correlation in the Fe 3d states and the hybridization between the Fe 3d and Pt 5d states. By comparing the experimental valence band structure with the theoretical density of states, the strong electron correlation in the Fe 3d states modifies the valence band electronic structure of the L1{sub 0} ordered FePt thin film through the Fe 3d-Pt 5d hybridization. These results strongly suggest that the strong electron correlation effect in the Fe 3d states and the Fe 3d-Pt 5d hybridization as well as the spin-orbit interaction in the Pt 5d states play important roles in the perpendicular MCA for L1{sub 0}-FePt.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Instrument for in situ hard x-ray nanobeam characterization during epitaxial crystallization and materials transformations

Solid-phase epitaxy (SPE) and other three-dimensional epitaxial crystallization processes pose challenging structural and chemical characterization problems. The concentration of defects, the spatial distribution of elastic strain, and the chemical state of ions each vary with nanoscale characteristic length scales and depend sensitively on the gas environment and elastic boundary conditions during growth. The lateral or three-dimensional propagation of crystalline interfaces in SPE has nanoscale or submicrometer characteristic distances during typical crystallization times. Here, an in situ synchrotron hard x-ray instrument allows these features to be studied during deposition and crystallization using diffraction, resonant scattering, nanobeam and coherent diffraction imaging, and reflectivity. The instrument incorporates a compact deposition system allowing the use of short-working-distance x-ray focusing optics. Layers are deposited using radio-frequency magnetron sputtering and evaporation sources. The deposition system provides control of the gas atmosphere and sample temperature. The sample is positioned using a stable mechanical design to minimize vibration and drift and employs precise translation stages to enable nanobeam experiments. Results of in situ x-ray characterization of the amorphous thin film deposition process for a SrTiO 3 /BaTiO 3 multilayer illustrate implementation of this instrument.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Multi-energy calibration of a PILATUS3 CdTe detector for hard x-ray measurements of magnetically confined fusion plasmas

A multi-energy hard x-ray pin-hole camera based on the PILATUS3 X 100K-M CdTe detector has been developed at the Princeton Plasma Physics Laboratory for installation on the Tungsten Environment in Steady State Tokamak. This camera will be employed to study thermal plasma features such as electron temperature as well as non-thermal effects such as fast electron tails produced by a lower hybrid radiofrequency current drive and the birth of runaway electrons. The innovative aspect of the system lies in the possibility of setting the threshold energy independently for each of the ~100k pixels of the detector. This feature allows for the measurement of the x-ray emission in multiple energy ranges with adequate space and time resolution (~1 cm, 2 ms) and coarse energy resolution. In this work, the energy dependence of each pixel was calibrated within the range 15 keV–100 keV using a tungsten x-ray tube and emission from a variety of fluorescence targets (from yttrium to uranium). The data corresponding to pairs of K α emission lines are fit to the characteristic responsivity (“S-curve”), which describes the detector sensitivity across the 64 possible energy threshold values for each pixel; this novel capability is explored by fine-tuning the voltage of a six-bit digital-analog converter after the charge-sensitive amplifier for each of the ~100k pixels. Here, this work presents the results of the calibration including a statistical analysis. It was found that the achievable energy resolution is mainly limited by the width of the S-curve to 3 keV–10 keV for threshold energies up to 50 keV, and to ≥20 keV for energies above 60 keV.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗