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At least 1,027 records · Page 57

Unexpected crystalline homogeneity from the disordered bond network in La(Cr 0.2 Mn 0.2 Fe 0.2 Co 0.2 Ni 0.2 )O 3 films

Designing and understanding functional electronic and magnetic properties in perovskite oxides requires controlling and tuning the underlying crystal lattice. In this work, we report the structure, including oxygen and cation positions, of a single-crystal, entropy stabilized perovskite oxide film of La(Cr 0.2 Mn 0.2 Fe 0.2 Co 0.2 Ni 0.2 )O 3 grown on SrTiO3 (001). The parent materials range from orthorhombic (LaCrO 3 , LaMnO 3 , and LaFeO 3 ) to rhombohedral (LaCoO 3 and LaNiO 3 ), and first principles calculations indicate that these structural motifs are nearly degenerate in energy and should be highly distorted site to site. Despite this extraordinary local configurational disorder on the B-site sublattice, we find a structure with unexpected macroscopic crystalline homogeneity with a clear orthorhombic unit cell, whose orientation is demonstrated to be controlled by the strain and crystal structure of the substrate for films grown on (La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )O 3 and NdGaO 3 (110). Furthermore, quantification of the atom positions within the unit cell reveals that the orthorhombic distortions are small, close to LaCrO 3, which may be driven by a combination of disorder averaging and the average ionic radii. This is a step toward understanding the rules for designing crystal motifs and tuning functional properties through controlled configurational complexity.

36 MATERIALS SCIENCE↗

Plasmonics in argentene

Merging concepts from the fields of ab initio materials science and nanophotonics, there is now an opportunity to engineer new photonic materials whose optical, transport, and scattering properties are tailored to attain thermodynamic and quantum limits. Here we present first-principles calculations predicting that Argentene, a single-crystalline hexagonal close-packed monolayer of Ag, can dramatically surpass the optical properties and electrical conductivity of conventional plasmonic materials. In the low-frequency limit, we show that the scattering rate and resistivity reduce by a factor of 3 compared to the bulk three-dimensional metal. Most importantly, the low scattering rate extends to optical frequencies in sharp contrast to, e.g., graphene, whose scattering rate increase drastically in the near-infrared range due to optical-phonon scattering. Combined with an intrinsically high carrier density, this facilitates highly confined surface plasmons extending to visible frequencies. We evaluate Argentene across three distinct figures of merit, in each outperforming the state-of-the-art, making it a valuable addition to the two-dimensional heterostructure toolkit for quantum optoelectronics.

36 MATERIALS SCIENCE↗

Interfacial electronic states of misfit heterostructure between hexagonal ZnO and cubic NiO

The combination of materials with dissimilar symmetries can induce a large amount of stress at the interfacial layer of films, thereby promoting the appearance of novel properties in related devices. The study of the interfacial state is critical for determining the inner mechanism. In this work, the misfit heterostructure between cubic NiO films and wurtzite ZnO is investigated. A NiO film grown using molecular beam epitaxy on a ZnO substrate shows a highly (100)-oriented texture featuring three domains with a rotation angle of 30°, which is in agreement with first principles calculations. Misfit-induced dislocations and lattice distortions within the interfacial layers of the NiO film give rise to interfacial electronic states, which are different from those in bulk; these electronic states are analyzed by in situ synchrotron-based x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, x-ray absorption spectroscopy, and ex situ electron energy loss spectroscopy. Additionally, the origin of these interfacial states is discussed. This work aims to provide insights for the integration of semiconducting hexagonal ZnO with other functional materials that have a cubic symmetry. Additionally, we investigate the integration of photon and electron-based techniques to explore the interfacial states of complex interfaces, which is an important aspect of material science.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Monolayer 2D semiconducting tellurides for high-mobility electronics

Discovery and design of two-dimensional (2D) materials with suitable band gaps and high carrier mobility are of vital importance for the photonics, optoelectronics, and high-speed electronics. In this work, based on first principles calculations using density functional theory with Perdew-Burke-Ernzerhof and Heyd-Scuseria-Ernzerhoffunctionals, we introduce a family of monolayer isostructural semiconducting tellurides MNTe 4 , with M={Ti,Zr,Hf} and N={Si,Ge}. We find that these compounds have been identified to possess direct band gaps from 1.0 to 1.31 eV, which are well suited for photonics and optoelectronics applications. Additionally, anisotropic in-plane transport behavior is observed, and small electron and hole (0.11–0.15m e ) effective masses are identified along the dominant transport direction. Ultrahigh carrier mobility is predicted for this family of 2D compounds, which host great promise for potential applications in high-speed electronic devices. Furthermore, detailed analysis of electronic structures reveals the origins of the promising properties of this unique class of 2D telluride materials.

2-dimensional systems↗

Design principles and physical properties of two-dimensional heterostructured borides

Principles of design to create dynamically stable transition metal-, lanthanide-, and actinide-based low-dimensional borides are presented. A charge transfer analysis of donor metal atoms to electron deficient honeycombed B lattices allows to predict complex covalent heterostructures hosting Dirac states. The applicable guidelines are supported with the analysis of phonon spectra computed with first-principles calculations to demonstrate the physical stability of nanometer-thick heterostructures. Similar or dissimilar layered borides can be stacked on top of each other in a layer-by-layer fashion creating compounds that can be fundamentally different from the individual layers, opening a rich playground to explore novel physical properties and new materials. Functionalities such as multiple Dirac states, highly dispersive electronic bands, and decoupled acoustic-optical phonon branches are studied. The combination of appealing electronic properties and physical realization makes of predicted layered borides promising materials to integrate a new generation of two-dimensional materials.

2-dimensional systems↗

Nodeless kagome superconductivity in LaRu 3 Si 2

We report muon spin rotation (μSR) experiments together with first-principles calculations on microscopic properties of superconductivity in the kagome superconductor LaRu 3 Si 2 with T c ≃ 7K. Below Tc, μSR reveals type-II superconductivity with a single s-wave gap, which is robust against hydrostatic pressure up to 2 GPa. We find that the calculated normal state band structure features a kagome flat band, and Dirac as well as van Hove points formed by the Ru-dz 2 orbitals near the Fermi level. We also find that electron-phonon coupling alone can only reproduce a small fraction of T c from calculations, which suggests other factors in enhancing T c such as the correlation effect from the kagome flat band, the van Hove point on the kagome lattice, and the high density of states from narrow kagome bands. Our experiments and calculations taken together point to nodeless moderate coupling kagome superconductivity in LaRu 3 Si 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ferroelectricity in boron-substituted aluminum nitride thin films

This manuscript demonstrates ferroelectricity in B-substituted AlN thin films and a complementary set of first-principles calculations to understand their structure-property relationships. Al 1–x B x N films are grown by dual-cathode reactive magnetron sputtering on (110)W/(001)Al 2 O 3 substrates at 300°C at compositions spanning x = 0 to x = 0.20. X-ray diffraction studies indicate a decrease in both the c and a lattice parameters with increasing B concentration, resulting in a decrease in unit cell volume and a constant c/a axial ratio of 1.60 over this composition range. Films with 0.02 ≤ x ≤ 0.15 display ferroelectric switching with remanent polarizations exceeding 125 μCcm –2 while maintaining band gap energies of > 5.2eV. The large band gap allows low frequency hysteresis measurement (200 Hz) with modest leakage contributions. At B concentrations of x > 0.15, c-axis orientation deteriorates and ferroelectric behavior is degraded. Furthermore, density-functional theory calculations corroborate the structural observations and provide predictions for the wurtzite u parameter, polarization reversal magnitudes, and composition-dependent coercive fields.

36 MATERIALS SCIENCE↗

Vibrational properties and thermal transport in quaternary chalcogenides: The case of Te-based compositions

Vibrational thermal properties of CuZn 2 InTe 4 , AgZn 2 InTe 4 , and Cu 2 CdSnTe 4 , derived from binary II-VI zinc-blendes, are reported based on first-principles calculations. While the chalcogenide atoms in these materials have the same lattice positions, the cation atom arrangements vary, resulting in different crystal symmetries and subsequent properties. The compositional differences have important effects on the vibrational thermal characteristics of the studied materials, which demonstrate that low-frequency optical phonons hybridize with acoustic phonons and lead to enhanced phonon-phonon scattering and low lattice thermal conductivities. The phonon density of states, mode Grüneisen parameters, and phonon scattering rates are also calculated, enabling deeper insight into the microscopic thermal conduction processes in these materials. Compositional variations drive differences among the three materials considered here; nonetheless, their structural similarities and generally low thermal conductivities (0.5–4 W/m K at room temperature) suggest that other similar II-VI zinc-blende derived materials will also exhibit similarly low values, as also corroborated by experimental data. Finally, this, combined with the versatility in designing a variety of motifs on the overall structure, makes quaternary chalcogenides interesting for thermal management and energy conversion applications that require low thermal conductivity.

36 MATERIALS SCIENCE↗

Spirals and skyrmions in antiferromagnetic triangular lattices

In this work, we study realizations of spirals and skyrmions in two-dimensional antiferromagnets with a triangular lattice on an inversion-symmetry-breaking substrate. As a possible material realization, we investigate the adsorption of transition-metal atoms (Cr, Mn, Fe, or Co) on a monolayer of MoS 2 , WS 2 , or WSe 2 and obtain the exchange, anisotropy, and Dzyaloshinskii-Moriya interaction parameters using first-principles calculations. Using energy minimization and parallel-tempering Monte Carlo simulations, we determine the magnetic phase diagrams for a wide range of interaction parameters. We find that skyrmion lattices can appear even with weak Dzyaloshinskii-Moriya interactions, but their stability is hindered by magnetic anisotropy. However, a weak easy plane magnetic anisotropy can be beneficial for stabilizing the skyrmion phase. Our results suggest that Cr/MoS 2 , Fe/MoS 2 , and Fe/WSe 2 interfaces can host spin spirals formed from the 120 degrees antiferromagnetic states. Our results further suggest that for interfaces, such as Fe/MoS 2 , the Dzyaloshinskii-Moriya interaction is strong enough to drive the system into a three-sublattice skyrmion lattice in the presence of experimentally feasible external magnetic field.

36 MATERIALS SCIENCE↗

Theoretical and experimental study of the nitrogen-vacancy center in 4H-SiC.

Using first-principles calculations and magnetic resonance experiments, we investigated the physical properties of the negatively charged nitrogen-vacancy (NV) center in 4H-SiC, a promising spin qubit. Our predictive theoretical model in conjunction with experimental measurements reveals a large sensitivity to strain and symmetry. The measured and computed zero-phonon lines (ZPLs) are in agreement and show a consistent trend as a function of the defect location in the crystal. The computed ZPLs are extremely sensitive to the geometrical configurations of the ground and excited states, and large supercells with more than 2 000 atoms are required to obtain accurate numerical results. We find that the computed decoherence time of the basal NV centers at zero magnetic field is substantially larger than that of the axial configurations. Furthermore, at natural nuclear spin abundance and zero field, the Hahn-echo coherence time of one of the basal configurations is similar to that of the axial divacancy in isotopically purified SiC.

Zhu, Yizhi↗

Tuning the critical Li intercalation concentrations for MoX 2 (X = S, Se, or Te) bilayer phase transitions

Transition metal dichalcogenides (TMDs), such as MoS 2 , are known to undergo a structural phase transformation as well as a change in the electronic conductivity upon Li intercalation. These properties make them candidates for charge-tunable ion-insertion materials that could be used in electro-chemical devices. In this work we study the phase stability and electronic structure of H and T’ Li-intercalated MoX 2 bilayers with X=S, Se, or Te. Here, using first-principles calculations in combination with classical and machine learning modeling approaches, we find that the H phase is more stable at low Li concentration for all X, and the critical Li concentration at which the T’→H transition occurs decreases with increasing mass of X. Furthermore the relative free energy of the two phases becomes less sensitive to Li insertion with increasing atomic mass of the chalcogen atom X. While the electronic conductivity increases with increasing ion concentration at low concentrations, we do not observe a (positive) conductivity jump at the phase transition from H to T’.

36 MATERIALS SCIENCE↗

Helical versus collinear antiferromagnetic order tuned by magnetic anisotropy in polar and chiral (Ni,Mn) 3 TeO 6

In this work, polar and chiral Ni 3 TeO 6 was found to exhibit a colossal magnetoelectric (ME) effect associated with collinear antiferromagnetic order. We have investigated the evolution of its magnetic state with the substitution of the Ni 2+ spins by isotropic Mn 2+ spins, namely (Ni, Mn) 3 TeO 6 (NMTO). The ground state of NMTO maintains an Ising nature, but a new phase with XY-type magnetic anisotropy is discovered at an intermediate temperature range. Neutron powder diffraction experiments reveal that (1) Mn ions tend to occupy a specific transition-metal site, consistent with the first-principle calculation, and (2) the intermediate phase is an incommensurate (IC) helical magnetic state propagating along the $\textit{c}$ axis with $\vec q_{\text{IC}}$ = (0, 0, 1.5 ± δ). We also found that the balance between these two magnetic states can be readily manipulated with magnetic fields, which results in significant ME effects. This selective site occupancy of NMTO allows for a unique competition between collinear and helical magnetic structures with minimal chemical disorder. Thus, NMTO serves as a model system to study site-specific chemical control of noncollinear magnetism and ME coupling.

36 MATERIALS SCIENCE↗

Defect chemistry of Cr-B binary and Cr-Al-B MAB phases: Effects of covalently bonded B networks

Transition metal borides, which are three-dimensional (3D) layered materials containing covalently bonded B networks, have shown a number of excellent properties, such as radiation resistance and the ability to act as a diffusion barrier in integrated circuits. However, defect behavior, which controls many of the materials’ properties, has remained unknown in these materials. In this work, we investigate the effects of the B networks on the defect chemistry in both binary borides (CrB, Cr 3 B 4 , Cr 2 B 3 ) and ternary MAB phases (Cr 2 AlB 2 , Cr 3 AlB 4 , Cr 4 AlB 6 ) using first-principles calculations. We find that increasing the number of B rings in the structure leads to lower formation energies and higher concentrations of Frenkel pairs. The results can be explained by the fact that the strongest Cr-B bond is weakened when borides have more B rings, leading to a reduction in the formation energy of Cr and B vacancies. Also, the bonds associated with Cr atoms bonded within B rings are softer in structures containing more B rings, which allows Cr interstitials to form with a lower energy cost and contributes to an increase in the concentration of Cr interstitials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Potential high-performance magnet materials: Co- and Al-alloyed Sm 2 Fe 17

Sm 2 Fe 17 has long been known as a potential high-performance magnet whose deficiencies—planar anisotropy and lower-than-optimal T c —can be remedied by nitrogen addition, but which presents synthesis difficulties. In this work, we apply first-principles calculations to search for alternative low-cost, high-performance permanent magnets in this family, by exploring simultaneous Fe and Al substitution. Specifically, the goal is to improve properties of Sm 2 Fe 14 Al 3 easy-plane magnet at the stoichiometric composition. Density functional theory calculations were executed for three series of compounds, i.e., Sm 2 (Fe 1-x Co x ) 14 Al 3 , Sm 2 (Fe 1-x Co x ) 15 Al 2 , and Sm 2 (Fe 1-x Cox) 16 Al. We find that substitution of Fe with 12–18 of Co in % Sm 2 Fe 14 Al 3 modifies the magnetic anisotropy type from easy plane to easy axis with a substantial anisotropy of 7.1 MJ/m 3 . We also demonstrate that the largest part of magnetic anisotropy is introduced by 4f Sm atom electrons. Thus the rotation of magnetic moment orientation from $\langle$$1\bar10$$\rangle$ to $\langle$111$\rangle$ is followed by an increase of the occupied 4f state number and, as a result, the orbital part of the magnetic moment of one of the Sm atoms. This increase of the occupied 4f state number at an energy ~ -4.3 eV results in a significant reduction of band structure energy. The substitution of Fe by Co does not significantly reduce the magnetization of the compound and keeps it slightly above 1 T. This combination of magnetic anisotropy and magnetization makes the compound a promising candidate for a permanent magnet.

36 MATERIALS SCIENCE↗

Statistics on magnetic properties of Co compounds: A database-driven method for discovering Co-based ferromagnets

The search for new ferromagnetic compounds is often targeted at known structure families, particularly those containing iron, cobalt, and manganese. Here, we propose a method to expand this search to lesser-known structure types, using a database of experimental Curie and Néel temperatures. This study, in particular, illustrates the case of compounds containing the element cobalt, and we demonstrate how the use of such a database can lead to the discovery of ferromagnetic materials that had previously been overlooked. We report statistics from a literature survey of the magnetic properties of Co-based compounds with more than 33 at. % Co. We classify more than 13 000 compounds by structure type, cobalt content, and magnetic ground state. From these data, compounds TaCo 2 Ga, La 6 Co 13 Bi, and Nd 2 Co 3 were identified as potential ferromagnets, and we confirm their ferromagnetic ordering theoretically via first-principles calculations and experimentally via synthesis and characterization measurements. In addition, the analysis is focused on the collection of data trends and discovery of ferromagnetic materials with easy-axis magnetic anisotropy. Both known ferromagnetic materials with unknown magnetic anisotropy, and unstudied compounds were considered. From the subset of known ferromagnets with unknown anisotropy, the compound Co 2 Mg was synthesized, characterized, and determined to have easy-axis magnetic anisotropy at room temperature.

36 MATERIALS SCIENCE↗

Native and radiation induced point defects in AlN and Sc-doped AlN

Herein, we have performed first-principles calculations to investigate the electronic structure, configurations, formation, and binding energies of native and radiation induced point defects in pristine and Sc-doped wurtzite AlN. For the native defects, the nitrogen vacancy has the lowest formation energy in p-type material while the aluminum vacancy has the lowest formation energy in n-type material which is consistent with the previous studies. Several interstitial defect structures were modeled for Al, N, and Sc atoms. The effects of charge state on their relative stability were investigated. The binding energy of Sc with point defects was calculated and found to be dependent strongly on the defect type and charge state. The results obtained are discussed in light of the possible Sc effects on the radiation damage evolution in AlN. Thus the attraction of Sc atom to N vacancy and both Al and N interstitials reduces their mobility and increases Frenkel pair recombination distance.

36 MATERIALS SCIENCE↗

Observation of multiple nodal lines in SmSbTe

Having been a ground for various topological fermionic phases, the family of ZrSiS-type 111 materials has been under experimental and theoretical investigations. Within this family of materials, the subfamily LnSbTe (Ln = lanthanide elements) is gaining interest in recent times as the strong correlation effects and magnetism arising from the 4f electrons of the lanthanides can provide an important platform to study the link between topology, magnetism, and correlation. In this Letter, we report the systematic study of the electronic structure of SmSbTe—a member of the Ln SbTe subfamily—by utilizing angle-resolved photoemission spectroscopy in conjunction with first-principles calculations, transport, and magnetic measurements. Our experimental results identify multiple Dirac nodes forming the nodal lines along the Γ–X and Z–R directions in the bulk Brillouin zone (BZ) as predicted by our theoretical calculations. Additionally, a surface Dirac-like state is also observed at the X point of the surface BZ. Our study highlights SmSbTe as a promising candidate to understand the topological electronic structure of LnSbTe materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Polarons and electrical leakage in BaZrO 3 and BaCeO 3

The proton conductors barium zirconate (BaZrO 3 , or BZO), barium cerate (BaCeO 3 , or BCO), and their alloys have attracted considerable interest as solid-state electrolytes in solid-oxide fuel and electrolysis cells. However, the reasons for their non-negligible electrical conductivity, which can limit their performance, are not fully understood. To address that question, we use first-principles calculations based on density functional theory to study the properties of hole and electron polarons in BZO and BCO. We confirm that hole polarons form in both materials, slightly more favorably in BCO. Electron polarons, on the other hand, are stable only in BCO and in Ce-containing alloys; in pure BZO, electron polaron states are unfavorable relative to free carriers, though they become accessible when Ce impurities are introduced. In general, doped BZO and BCO will have negligible electron concentrations, but larger concentrations of holes and hole polarons may be present. Avoiding extreme O-rich conditions and limiting dopant concentrations are key strategies for reducing significant p -type electrical leakage. Furthermore, our results provide physical insights into the different electronic behaviors of BZO and BCO, which can be used to optimize their performance as pure ionic conductors.

08 HYDROGEN↗