Fundamental behavior of electric field enhancements in the gaps between closely spaced nanostructures
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Assuming the presence of physics beyond the Standard Model ( SM) with a characteristic scale M ~ O (10) TeV, we investigate the naturalness of the Higgs sector at scales below M using an effective field theory (EFT) approach. We obtain the leading 1 -loop EFT contributions to the Higgs mass with a Wilsonian-like hard cutoff, and determine t he constraints on the corresponding operator coefficients for these effects to alleviate the little hierarchy problem up to the scale of the effective action Λ < M , a condition we denote by “EFT-naturalness”. We also determine the types of physics that can lead to EFT-naturalness and show that these types of new physics are best probed in vector-boson and multiple-Higgs production. The current experimental constraints on these coefficients are also discussed.
The possibility of dynamically shaping mega-ampere electron currents generated in solids by ultraintense laser pulses in various conductor materials has been investigated. By tuning the target ionization dynamics, which depends both on the target material properties and on the input electron beam characteristics, we can control the growth of resistive magnetic fields that feedback on the current transport. As a result, collimation, hollowing, or filamentation of the electron beam can all be obtained. These results are beneficial for applications such as the production of secondary particles and radiation sources and fast ignition of inertial confinement fusion.
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Near-field thermophotovoltaic (NFTPV) devices have received much attention lately as an alternative energy harvesting system, whereby a heated emitter exchanges super-Planckian thermal radiation with a photovoltaic (PV) cell to generate electricity. This work describes the use of a grating structure to enhance the power throughput of NFTPV devices, while increasing the energy conversion efficiency by ensuring that a large portion of the radiation entering the PV cell is above the band gap. The device contains a high-temperature tungsten grating that radiates photons to a room-temperature In 0.18 Ga 0.82 Sb PV cell through a vacuum gap of several tens of nanometers. Scattering theory is used along with the rigorous coupled-wave analysis (RCWA) to calculate the radiation energy exchange between the grating emitter and the TPV cell. A parametric study is performed by varying the grating depth, period, and ridge width in the range that can be fabricated using available fabrication technologies. It is found that the power output can be increased by 40% while improving the efficiency from 29.9% to 32.0% with a selected grating emitter as compared to the case of a flat tungsten emitter. Reasons for the enhancement are found to be due to the enhanced energy transmission coefficient close to the band gap. Furthermore, this work shows a possible way of improving NFTPV and sheds light on how grating structures interact with thermal radiation at the nanoscale.
Effect of very strong magnetic fields & magnetic- free environments on man & animals
Motion of low rigidity cosmic rays in dipole field rests on characteristics of motion of these particles in alfven and stormer regimes
Simple model and calculation of interplanetary magnetic field
Abstract It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound ( p ‐NO 2 ‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p ‐NO 2 ‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10 6 ‐fold at V G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p ‐NO 2 ‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p ‐NO 2 ‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.
In this study, we resolve deformation at The Geysers Geothermal Field using two distinct sets of interferometric synthetic aperture radar (InSAR) data. The first set of observations utilize archived European Space Agency C-band synthetic aperture radar data from 1992 through 1999 to image the long-term and large-scale subsidence at The Geysers. The peak range velocity of approximately 50 mm/year agrees with previous estimates from leveling and global positioning system observations. Data from a second set of measurements, acquired by TerraSAR-X satellites, extend from May 2011 until April 2012 and overlap the C-band data spatially but not temporally. These X-band data, analyzed using a combined permanent and distributed scatterer algorithm, provide a higher density of scatterers (1122 per square kilometer) than do the C-band data (12 per square kilometer). The TerraSAR-X observations resolve 1 to 2 cm of deformation due to water injection into a Northwest Geysers enhanced geothermal system well, initiated on October 2011. Lastly, the temporal variation of the deformation is compatible with estimates from coupled numerical modeling.