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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,027 records · Page 57
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Na Diffusion and Device Performance of AgBr Treated CuGaSe 2 Thin Films

Previous work demonstrated that uniform CuGaSe2 (CGS) thin films with large grains could be grown using a short AgBr vapor treatment during growth. Here, devices made with this treated CGS showed better performance compared to devices made with standard material. Here, it is shown that AgBr treated CGS device performance worsens over time and is attributed to the suppression of Na diffusion. A NaF post-deposition treatment is shown to effectively introduce Na into the AgBr treated CGS film and prevent device degradation.

14 SOLAR ENERGY↗
DOE OSTI2020

Characterizing the Stability of NISQ Devices

In this study, we focus on the question of stability of NISQ devices. The parameters that define the device stability profile are motivated by the work of DiVincenzo in [9] where the requirements for physical implementation of quantum computing are discussed. We develop the metrics and theoretical framework to quantify the DiVincenzo requirements and study the stability of those key metrics. The basis of our assessment is histogram similarity (in time and space). For identical experiments, devices which produce reproducible histograms in time, and similar histograms in space, are considered more reliable. To investigate such reliability concerns robustly, we propose a moment-based distance (MBD) metric. We illustrate our methodology using data collected from IBM's Yorktown device. Two types of assessments are discussed: spatial stability and temporal stability.

Dasgupta, Samudra↗
DOE OSTI2022

Adaptive stabilization of quantum circuits executed on unstable devices

Conventional computers have evolved to device components that demonstrate failure rates of 10 −17 or less, while current quantum computing devices typically exhibit error rates of 10 −2 or greater. This raises concerns about the reliability and reproducibility of the results obtained from quantum computers. The problem is highlighted by experimental observation that today’s NISQ devices are inherently unstable. Remote quantum cloud servers typically do not provide users with an ability to calibrate the device themselves. Using inaccurate characterization data for error mitigation can have devastating impact on reproducibility. In this study, we investigate if one can infer the critical channel parameters dynamically from the noisy binary output of the executed quantum circuit and use it to improve program stability. An open question however is how well does this methodology scale. We discuss the efficacy and efficiency of our adaptive algorithm using canonical quantum circuits such as the uniform superposition circuit. Our metric of performance is the Hellinger distance between the post-stabilization observations and the reference (ideal) distribution.

Dasgupta, Samudra↗
DOE OSTI2023

Reliable Devices Yield Stable Quantum Computations

Stable quantum computation requires noisy results to remain bounded even in the presence of noise fluctuations. Yet non-stationary noise processes lead to drift in the varying characteristics of a quantum device that can greatly influence the circuit outcomes. Here we address how temporal and spatial variations in noise relate device reliability to quantum computing stability. First, our approach quantifies the differences in statistical distributions of characterization metrics collected at different times and locations using Hellinger distance. We then validate an analytical bound that relates this distance directly to the stability of a computed expectation value. Our demonstration uses numerical simulations with models informed by the washington superconducting transmon device. We find that the stability metric is consistently bounded from above by the corresponding Hellinger distance, which can be cast as a specified tolerance level. These results underscore the significance of reliable quantum computing devices and the impact for stable quantum computation.

Dasgupta, Samudra↗
DOE OSTI2017

Methodology for Wide Band-Gap Device Dynamic Characterization

Here, the double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior of power devices. Considering the high switching-speed capability of wide band-gap devices, the test results are very sensitive to the alignment of voltage and current (V-I) measurements. Also, because of the shoot-through current induced by Cdv/dt (i.e., cross-talk), the switching losses of the nonoperating switch device in a phase-leg must be considered in addition to the operating device. This paper summarizes the key issues of the DPT, including components and layout design, measurement considerations, grounding effects, and data processing. Additionally, a practical method is proposed for phase-leg switching loss evaluation by calculating the difference between the input energy supplied by a dc capacitor and the output energy stored in a load inductor. Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V-I timing misalignment errors.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2018

Classification of Unintended Radiated Emissions in a Multi-Device Environment

Here, unintended radiated emissions (URE) from electronic devices are conducted on to the power infrastructure and can be collected and analyzed for non-intrusive load monitoring (NILM) applications. Dimensionally aligned signal projections (DASP) were previously introduced as specialized signal transforms to enable device classification using machine learning on statistical features derived from the DASP transforms. In this work, we explore multi-device classification which requires more sophisticated methods owing to the complexity of the feature space such as large dynamic range, non-contiguous features, over-lapping features, and nonlinear interactions of features. In particular, we introduce an additional DASP algorithm for increased resolution and sensitivity to intermodulation products and examine the utility of convolutional neural networks (CNNs) to extract and learn features directly from DASP images for classification of single and multiple device URE captures.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2013

Dry etching techniques for active devices based on hexagonal boron nitride epilayers

Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

36 MATERIALS SCIENCE↗
DOE OSTI2015

SU-E-T-447: Growth of Metal Whiskers Under External Beam Irradiation: Experimental Evidence and Implications in Medical Electronic Devices for Radiation Therapy Treatments

Purpose: Thin metallic protrusions, termed “whiskers,” have been identified as a cause of failure in devices ranging from satellites to pacemakers. For decades, lead was used in tin-based soldering alloys to suppress whisker formation. With the adoption of the Restriction of Hazardous Substances act and the expiration of its exemption on medical devices, including implanted medical devices (IMDs), electronic circuits are required to be lead-free as of July 2014. The effect of radiation on such soldering components remains unknown. Methods: We have irradiated a thin (150 nm) tin metal layer, deposited on a 3 mm thick glass substrate, with a 6 MeV medical linac (Varian TrueBeam) electron beam in five 2-hour long sessions. After receiving ∼10 kGy, whisker growth on the sample was assessed with scanning electron microscopy and compared to a reference sample not exposed to radiation. Results: After 10 hours of irradiation, the sample was found to develop intense whisker infestation, while the reference sample remained in its pristine as-deposited condition. Repeating the same irradiation schedule generated more and longer whiskers. The observed phenomenon can be explained through charge accumulation in the glass substrate, generating an electric field that promotes whisker growth. The observed substrate glass darkening under irradiation points towards development of color centers related to charge trapping. Experiments on the same type of samples with direct application of the external field in a capacitor-like setting also resulted in intense whisker growth. Conclusion: Extreme care should be taken in dealing with all electronic devices, especially IMDs, produced with lead-free solder and components, subject to radiation exposure. While in our experiments strong electric fields were intentionally generated to accelerate whisker growth over hours, in everyday use the circuit soldering may cause problems in a matter of days or months. Designated reliability testing under radiation must be conducted. This work is partially supported by NRC grant No. NRC-HQ-12-G-38-0042.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

SU-F-I-15: Evaluation of a New MR-Compatible Respiratory Motion Device at 3T

Purpose: Recent advances in MRI-guided radiotherapy has inspired the development of MRI-compatible motion devices that simulate patient periodic motion in the scanner, particularly respiratory motion. Most commercial devices rely on non MR-safe ferromagnetic stepper motors which are not practical for regular QA testing. This work evaluates the motion performance of a new fully MRI compatible respiratory motion device at 3T. Methods: The QUASAR™ MRI-compatible respiratory motion phantom has been recently developed by Modus QA Inc., London, ON, Canada. The prototype is constructed from diamagnetic materials with linear motion generated using MRI-compatible piezoelectric motors that can be safely inserted in the scanner bore. The tumor was represented by a fillable sphere and is attached to the linear motion generator. The spherical tumor-representative and its surroundings were filled with different concentrations of MnCl2 to produce realistic relaxation times. The motion was generated along the longitudinal (H/F) axis of the bore using sinusoidal reference waveform (amplitude = 15 mm, frequency 0.25 Hz). Imaging was then performed on 3T Philips Achieva using a 32-channel cardiac coil. Fast 2D spoiled gradient-echo was used with a spatial resolution of 1.8 × 1.8 mm{sup 2} and slice thickness of 4 mm. The motion waveform was then measured on the resultant image series by tracking the centroid of the sphere through the time series. This image-derived measured motion was compared to the software-generated reference waveform. Results: No visible distortions from the device were observed on the images. Excellent agreement between the measured and the reference waveforms were obtained. Negligible motion was observed in the lateral (R/L) direction. Conclusion: Our investigation demonstrates that this piezo-electric motor design is effective at simulating periodic motion and is a potential candidate for MRI-radiotherapy respiratory motion simulation. Future work should focus on evaluating non-sinusoidal waveforms, fast 3D pulse sequences, and perform dosimetric QA.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

SU-F-T-18: The Importance of Immobilization Devices in Brachytherapy Treatments of Vaginal Cuff

Purpose: High dose rate brachytherapy is a highly localized radiation therapy that has a very high dose gradient. Thus one of the most important parts of the treatment is the immobilization. The smallest movement of the patient or applicator can result in dose variation to the surrounding tissues as well as to the tumor to be treated. We will revise the ML Cylinder treatments and their localization challenges. Methods: A retrospective study of 25 patients with 5 treatments each looking into the applicator’s placement in regard to the organs at risk. Motion possibilities for each applicator intra and inter fractionation with their dosimetric implications were covered and measured in regard with their dose variance. The localization immobilization devices used were assessed for the capability to prevent motion before and during the treatment delivery. Results: We focused on the 100% isodose on central axis and a 15 degree displacement due to possible rotation analyzing the dose variations to the bladder and rectum walls. The average dose variation for bladder was 15% of the accepted tolerance, with a minimum variance of 11.1% and a maximum one of 23.14% on the central axis. For the off axis measurements we found an average variation of 16.84% of the accepted tolerance, with a minimum variance of 11.47% and a maximum one of 27.69%. For the rectum we focused on the rectum wall closest to the 120% isodose line. The average dose variation was 19.4%, minimum 11.3% and a maximum of 34.02% from the accepted tolerance values Conclusion: Improved immobilization devices are recommended. For inter-fractionation, localization devices are recommended in place with consistent planning in regards with the initial fraction. Many of the present immobilization devices produced for external radiotherapy can be used to improve the localization of HDR applicators during transportation of the patient and during treatment.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

SU-F-T-260: Using Portal Image Device for Pre-Treatment QA in Volumetric Modulated Arc Plans with Flattening Filter Free (FFF) Beams

Purpose: To implement and validate a method of using electronic portal image device (EPID) for pre-treatment quality assurance (QA) of volumetric modulated arc therapy (VMAT) plans using flattering filter free (FFF) beams for stereotactic body radiotherapy (SBRT). Methods: On Varian Edge with 6MV FFF beam, open field (from 2×2 cm to 20×20 cm) EPID images were acquired with 200 monitor unit (MU) at the image device to radiation source distance of 150cm. With 10×10 open field and calibration unit (CU) provided by vendor to EPID image pixel, a dose conversion factor was determined by dividing the center dose calculated from the treatment planning system (TPS) to the corresponding CU readout on the image. Water phantom measured beam profile and the output factors for various field sizes were further correlated to those of EPID images. The dose conversion factor and correction factors were then used for converting the portal images to the planner dose distributions of clinical fields. A total of 28 VMAT fields of 14 SBRT plans (8 lung, 2 prostate, 2 liver and 2 spine) were measured. With 10% low threshold cutoff, the delivered dose distributions were compared to the reference doses calculated in water phantom from the TPS. A gamma index analysis was performed for the comparison in percentage dose difference/distance-to-agreement specifications. Results: The EPID device has a linear response to the open fields with increasing MU. For the clinical fields, the gamma indices between the converted EPID dose distributions and the TPS calculated 2D dose distributions were 98.7%±1.1%, 94.0%±3.4% and 70.3%±7.7% for the criteria of 3%/3mm, 2%/2mm and 1%/1mm, respectively. Conclusion: Using a portal image device, a high resolution and high accuracy portal dosimerty was achieved for pre-treatment QA verification for SBRT VMAT plans with FFF beams.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2019

Electrical Characterization of Hybrid Halide Perovskites Based Heterojunction Device

Herein, we have measured the mobility of Hole’s for the configuration FTO/TiO{sub 2}/CH{sub 3}NH{sub 3}PbBr{sub 3}/PEDOT:PSS/Al by the SCLC regime. The current–voltage (I–V) characteristics of the CH{sub 3}NH{sub 3}PbBr{sub 3} perovskite based device shows the rectifying behavior as Schottky diode. Different parameters of the proposed device such as saturation current, ideality factor, barrier height have been taken out from I–V characteristics. The highest Hole’s mobility from TiO{sub 2} thin film through the perovskite and PEDOT:PSS film to the top aluminum electrode has of order 1.59 × 10{sup –4} cm{sup 2} V{sup –1} s{sup –1}. Moreover, the proposed device shows the TFSCLC regime at lower voltage while, at higher voltages it shows the TCLC regime. In addition to this, some important parameters like junction resistance, capacitance and carrier lifetime of device can be measured by the spectroscopy analysis of impedance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Data for Construction of a Compact Array of Microplasma Jet Devices and Its Application for Random Mutagenesis of Rhodosporidium toruloides

A small and efficient DNA mutation-inducing machine was constructed with an array of microplasma jet devices (7 × 1) that can be operated at atmospheric pressure for microbial mutagenesis. Using this machine, we report disruption of a plasmid DNA and generation of mutants of an oleaginous yeast Rhodosporidium toruloides . Specifically, a compact-sized microplasma channel (25 × 20 × 2 mm3) capable of generating an electron density of greater than 1013 cm–3 was constructed to produce reactive species (N2*, N2+, O, OH, and Hα) under helium atmospheric conditions to induce DNA mutagenesis. The length of microplasma channels in the device played a critical role in augmenting both the volume of plasma and the concentration of reactive species. First, we confirmed that microplasma treatment can linearize a plasmid by creating nicks in vitro. Second, we treated R. toruloides cells with a jet device containing 7 microchannels for 5 min; 94.8% of the treated cells were killed, and 0.44% of surviving cells showed different colony colors as compared to their parental colony. Microplasma-based DNA mutation is energy-efficient and can be a safe alternative for inducing mutations compared to conventional methods using toxic mutagens. This compact and scalable device is amenable for industrial strain improvement involving large-scale mutagenesis.

Conversion↗
DOE OSTI2023

Fabrication-robust silicon photonic devices in standard sub-micron silicon-on-insulator processes

Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms; this includes the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such variations are particularly troublesome for phase-sensitive devices, such as interferometers and resonators, which exhibit drastic changes in performance as a result of these fabrication-induced phase errors. In this Letter, we propose and experimentally demonstrate a design methodology for dramatically reducing device sensitivity to silicon width variations. We apply this methodology to a highly phase-sensitive device, the ring-assisted Mach–Zehnder interferometer (RAMZI), and show comparable performance and footprint to state-of-the-art devices, while substantially reducing stochastic phase errors from etch variations. This decrease in sensitivity is directly realized as energy savings by significantly reducing the required corrective thermal tuning power, providing a promising path toward ultra-energy-efficient large-scale silicon photonic circuits.

Rizzo, Anthony (ORCID:000000034752797X)↗
DOE OSTI2020

Disorder effects in nitride semiconductors: impact on fundamental and device properties

Abstract Semiconductor structures used for fundamental or device applications most often incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or InGaAlAs material systems, the effects of compositional disorder on the electronic properties can be treated in a perturbative approach. This is not the case in the more recent nitride-based GaInAlN alloys, where the potential changes associated with the various atoms induce strong localization effects, which cannot be described perturbatively. Since the early studies of these materials and devices, disorder effects have indeed been identified to play a major role in their properties. Although many studies have been performed on the structural characterization of materials, on intrinsic electronic localization properties, and on the impact of disorder on device operation, there are still many open questions on all these topics. Taking disorder into account also leads to unmanageable problems in simulations. As a prerequisite to address material and device simulations, a critical examination of experiments must be considered to ensure that one measures intrinsic parameters as these materials are difficult to grow with low defect densities. A specific property of nitride semiconductors that can obscure intrinsic properties is the strong spontaneous and piezoelectric fields. We outline in this review the remaining challenges faced when attempting to fully describe nitride-based material systems, taking the examples of LEDs. The objectives of a better understanding of disorder phenomena are to explain the hidden phenomena often forcing one to use ad hoc parameters, or additional poorly defined concepts, to make simulations agree with experiments. Finally, we describe a novel simulation tool based on a mathematical breakthrough to solve the Schrödinger equation in disordered potentials that facilitates 3D simulations that include alloy disorder.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Numerical Model of IProTech PIP WEC Device

iProTech PIP wave energy converter (WEC) is a slack moored, single hull device with no moving parts in the water, joints or bearings. This submission includes data of the simulation, reports, and code for the iProTech PIP (WEC) project. The organization of the data included in the provided archive is detailed below and in the data description of the archive. The data teamer-iprotech-nrel folder includes and explains matlab and python code developed to hydrodynamically model the PIP WEC device in WEC-Sim. The subfolders cover the following steps: 1) report: explanatory information on device geometry 2) pip_mesher: python code to generate mesh panels from device profile data 3) wec-sim_models: matlab code to run WEC-Sim The data uploaded is a snapshot as of 11/02/2121 of code residing in a Github repository administered by David Ogden of NREL.

16 TIDAL AND WAVE POWER↗
DOE OSTI2023

MASK4 Test Campaign for Sandia WaveBot Device

This data and report details the findings from a wave tank test focused on production of useful work of a wave energy converter (WEC) device. The experimental system and test were specifically designed to validate models for power transmission throughout the WEC system. Additionally, the validity of co-design informed changes to the power take-off (PTO) were assessed and shown to provide the expected improvements in system performance. These data describe the "MASK4" wave tank test of the Sandia WaveBot device. The WaveBot device has been tested a number of times in different permutations at the US Navy's Maneuvering and Sea Keeping (MASK) basin. Each test in this series is referred to as MASK1, MASK2, etc. The WaveBot device was first tested in one degree of freedom (heave) in 2016. This MASK1 test focused primarily on system identification and modeling. After MASK1, major modifications were performed to improve the overall real-time control and measurement system, improve the heave drive train, and add surge and pitch degrees of freedom. The second set of testing, which was broken up in to two stages: MASK2A and MASK2B, focused on bench testing and closed-loop control performance as well as nonlinear modeling. MASK3 then focused on multi-input, multi-output modeling and control for maximization of electrical power. The attached report presents the results from MASK4, which focuses on detailed modeling of the power conversion chain and validation co-design principles by way of the introduction of a magnetic spring. The test log, report, and data from the MASK4 test of the WaveBot augmented with a tunable magnetic spring. Processing codes can be found at the Github link below.

16 TIDAL AND WAVE POWER↗
DOE OSTI2017

Unified Numerical Solver for Device Metastabilities in CdTe Thin-Film PV

Thin-film modules of all technologies often suffer from performance degradation over time. Some of the performance changes are reversible and some are not, which makes deployment, testing, and energy-yield prediction more challenging. Manufacturers de-vote significant empirical efforts to study these phenomena and to improve semiconduc-tor device stability. Still, understanding the underlying reasons of these instabilities re-mains clouded due to the lack of ability to characterize materials at atomistic levels and the lack of interpretation from the most fundamental material science. The most com-monly alleged causes of metastability in CdTe device, such as “migration of Cu,” have been investigated rigorously over the past fifteen years. Still, the discussion often ended prematurely with stating observed correlations between stress conditions and changes in atomic profiles of impurities or CV doping concentration. Multiple hypotheses sug-gesting degradation of CdTe solar cell devices due to interaction and evolution of point defects and complexes were proposed, and none of them received strong theoretical or experimental confirmation. It should be noted that atomic impurity profiles in CdTe pro-vide very little intelligence on active doping concentrations. The same elements could form different energy states, which could be either donors or acceptors, depending on their position in crystalline lattice. Defects interact with other extrinsic and intrinsic de-fects; for example, changing the state of an impurity from an interstitial donor to a sub-stitutional acceptor often is accompanied by generation of a compensating intrinsic in-terstitial donor defect. Moreover, all defects, intrinsic and extrinsic, interact with the elec-trical potential and free carriers so that charged defects may drift in the electric field and the local electrical potential affects the formation energy of the point defects. Such complexity of interactions in CdTe makes understanding of temporal changes in device performance even more challenging and a closed solution that can treat the entire sys-tem and its interactions is required.

36 MATERIALS SCIENCE↗