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At least 1,027 records · Page 57

Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures

Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr0.52Ti0.48O3 (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroic devices.

Cui, Jizhai↗

Control of excitons in multi-layer van der Waals heterostructures

We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of MoS{sub 2} and hexagonal boron nitride. The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Understanding and control of bipolar self-doping in copper nitride

Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu{sub 3}N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu{sub 3}N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu{sub 3}N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu{sub 3}N with 10{sup 17} electrons/cm{sup 3} for low growth temperature (≈35 °C) and p-type with 10{sup 15} holes/cm{sup 3}–10{sup 16} holes/cm{sup 3} for elevated growth temperatures (50 °C–120 °C). Mobility for both types of Cu{sub 3}N was ≈0.1 cm{sup 2}/Vs–1 cm{sup 2}/Vs. Additionally, temperature-dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that V{sub Cu} defects form preferentially in p-type Cu{sub 3}N, while Cu{sub i} defects form preferentially in n-type Cu{sub 3}N, suggesting that Cu{sub 3}N is a compensated semiconductor with conductivity type resulting from a balance between donor and acceptor defects. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar doping in Cu{sub 3}N that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials and provide a framework that can be applied when considering the properties of such materials in general.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Deformation of a super-elastic NiTiNb alloy with controllable stress hysteresis

Room temperature deformation of a Ni{sub 46.7}Ti{sub 42.8}Nb{sub 10.5} alloy was studied by in-situ synchrotron X-ray diffraction. Compared to binary NiTi alloy, the Nb dissolved in the matrix significantly increased the onset stress for Stress-Induced Martensite Transformation (SIMT). The secondary phase, effectively a Nb-nanowire dispersion in a NiTi-Nb matrix, increased the elastic stiffness of the bulk material, reduced the strain anisotropy in austenite families by load sharing during SIMT, and increased the stress hysteresis by resisting reverse phase transformation during unloading. The stress hysteresis can be controlled over a wide range by heat treatment through its influences on the residual stress of the Nb-nanowire dispersion and the stability of the austenite.

36 MATERIALS SCIENCE↗

Controlling shockwave dynamics using architecture in periodic porous materials

Additive manufacturing (AM) is an attractive approach for the design and fabrication of structures capable of achieving controlled mechanical response of the underlying deformation mechanisms. While there are numerous examples illustrating how the quasi-static mechanical responses of polymer foams have been tailored by additive manufacturing, there is limited understanding of the response of these materials under shockwave compression. Dynamic compression experiments coupled with time-resolved X-ray imaging were performed to obtain insights into the in situ evolution of shockwave coupling to porous, periodic polymer foams. We further demonstrate shock wave modulation or “spatially graded-flow” in shock-driven experiments via the spatial control of layer symmetries afforded by additive manufacturing techniques at the micron scale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Contamination control and assay results for the Majorana Demonstrator ultra clean components

The Majorana Demonstrator is a neutrinoless double beta decay experiment utilizing enriched Ge-76 detectors in 2 separate modules inside of a common solid shield at the Sanford Underground Research Facility. The Demonstrator has utilized world leading assay sensitivities to develop clean materials and processes for producing ultra-pure copper and plastic components. This experiment is now operating, and initial data provide new insights into the success of cleaning and processing. Post production copper assays after the completion of Module 1 showed an increase in U and Th contamination in finished parts compared to starting bulk material. A revised cleaning method and additional round of surface contamination studies prior to Module 2 construction have provided evidence that more rigorous process control can reduce surface contamination. In conclusion, this article describes the assay results and discuss further studies to take advantage of assay capabilities for the purpose of maintaining ultra clean fabrication and process design.

36 MATERIALS SCIENCE↗

Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

A defect quasi Fermi level (dQFL) control process based on above bandgap illumination was applied to control H and V N -complexes, which are the main contributors to the passivation and self-compensation, respectively, in Mg:GaN grown via metalorganic chemical vapor deposition. Secondary ion mass spectrometry measurements confirmed that the total Mg incorporation was unaffected by the process. However, the total H concentration was reduced to similar levels obtained by post-growth thermal activation prior to any annealing treatment. Similarly, the 2.8 eV emission in the photoluminescence spectra, attributed to compensating V N and its complexes, was reduced for the dQFL-process samples. After thermal activation and Ni/Au contact deposition, Hall effect measurements revealed lower resistivities (increased mobilities and free hole concentrations) for dQFL-grown samples with Mg doping concentrations above and below 2 × 10 19 cm -3 . All these results demonstrate that the dQFL process can effectively reduce the H-passivation and self-compensation of the Mg:GaN films.

36 MATERIALS SCIENCE↗

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to –0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques.

Electrical properties and parameters↗

Voltage-Controlled Sensitivity of the Spin Seebeck Effect in Pt/Y 3 Fe 5 O 12 /MgO/(PbMg 1/3 Nb 2/3 O 3 ) 0.7 (PbTiO 3 ) 0.3 Multiferroic Heterostructures

The characteristics of pure spin current from the longitudinal spin Seebeck effect are investigated at room temperature in Pt / Y 3 Fe 5 O 12 deposited on the ( Pb Mg 1 / 3 Nb 2 / 3 O 3 ) 0.7 ( Pb Ti O 3 ) 0.3 substrate, through which electrostrain can be controllably applied. The applied voltage enables the modification of magnetic anisotropy in the magnetic insulating Y 3 Fe 5 O 12 layer, and thus the sensitivity of the spin Seebeck effect at small magnetic fields, without suppressing the spin Seebeck effect and the inverse spin Hall effect. This is due to the robust intrinsic physical parameters in Pt / Y 3 Fe 5 O 12 . In conclusion, our results pave the way for the application of voltage-controlled pure spin-current devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Predictive Control over Charge Density in the Two-Dimensional Electron Gas at the Polar-Nonpolar NdTiO 3 / SrTiO 3 Interface

Through systematic control of the Nd concentration, we show that the carrier density of the twodimensional electron gas (2DEG) in SrTiO3=NdTiO3=SrTiO3 ð001Þ can be modulated over a wide range. We also demonstrate that the NdTiO3 in heterojunctions without a SrTiO3 cap is degraded by oxygen absorption from air, resulting in the immobilization of donor electrons that could otherwise contribute to the 2DEG. This system is, thus, an ideal model to understand and control the insulator-to-metal transition in a 2DEG based on both environmental conditions and film-growth processing parameters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Helicity-Selective Enhancement and Polarization Control of Attosecond High Harmonic Waveforms Driven by Bichromatic Circularly Polarized Laser Fields

High harmonics driven by two-color counter-rotating circularly-polarized laser fields are a unique source of bright, circularly-polarized, extreme ultraviolet and soft x-ray beams, where the individual harmonics themselves are completely circularly polarized. Here, we demonstrate the ability to preferentially select either the right or left circularly polarized harmonics simply by adjusting the relative intensity ratio of the bichromatic circularly polarized driving laser field. In the frequency domain, this significantly enhances the harmonic orders that rotate in the same direction as the higher intensity driving laser. In the time domain, this helicity-dependent enhancement corresponds to control over the polarization of the resulting attosecond waveforms. Here, this helicity control enables the generation of circularly-polarized high harmonics with a user-defined polarization of the underlying attosecond bursts. In the future, this technique should allow for the production of bright highly elliptical harmonic supercontinua as well as the generation of isolated elliptically polarized attosecond pulses.

74 ATOMIC AND MOLECULAR PHYSICS↗

On Reverse Stackelberg Game and Optimal Mean Field Control for a Large Population of Thermostatically Controlled Loads

This paper studies a multi-stage pricing problem for a large population of thermostatically controlled loads. The problem is formulated as a reverse Stackelberg game that involves a mean field game in the hierarchy of decision making. In particular, in the higher level, a coordinator needs to design a pricing function to motivate individual agents to maximize the social welfare. In the lower level, the individual utility maximization problem of each agent forms a mean field game coupled through the pricing function that depends on the average of the population control/state. We derive the solution to the reverse Stackelberg game by connecting it to a team problem and the competitive equilibrium, and we show that this solution corresponds to the optimal mean field control that maximizes the social welfare. Realistic simulations are presented to validate the proposed methods.

Li, Sen↗

Vulnerability Detection Methodology for a Digital Signal Processor Micro-Controller at Edge Level Distributed Energy Resource Controller

Integration of renewable energy and energy storage based Distributed Energy Resource (DER) assets to the grid has seen an upsurge over the past few decades. Traditionally, energy would be generated at a thermal or nuclear power plant and then transmitted over long distance through the transmission grid and then supply to the customers at the distribution grid. Modern renewable energy based DER assets have brought energy production at the edge of distribution grid, which has made the grid vulnerable to cyber intrusion as the power flow controllers for such DER assets are now distributed across the grid from distribution level to transmission level. This paper discusses the vulnerability posed by such power flow controllers of DER assets and demonstrates a detection methodology for unauthorized access and manipulation of system configuration for Digital Signal Processor based Microcontrollers. Experimental results proving efficacy of the methodology have been shown in paper.

Bhowmik, Pankaj↗

Optimizing Traffic Signal Control to Enhance Transportation Efficiency and Maximize Pedestrian Benefits in the Road Network

Increasing urban mobility requirements demand efficient transportation system strategies for both vehicular and pedestrian movement. This study enhances the Decentralized Graph-based Multi-Agent Reinforcement Learning (DGMARL) approach, originally tailored for vehicular traffic signal timing, to incorporate pedestrian traffic dynamics. The improved algorithm considers crucial metrics such as Eco_PI, assesses vehicle fuel consumption by factoring in stops and delays, and addresses pedestrian waiting time, crucial for system efficiency while acknowledging driver waiting time impact. Utilizing Digital Twin simulation along the MLK Smart Corridor in Chattanooga, Tennessee, the algorithm's performance is compared for various pedestrian control scenarios. To evaluate the effectiveness of DGMARL, this study compared DGMARL-enabled signal management with automated pedestrian traffic detection and an actuated signal management system (real-word baseline) with pedestrian recall, which predetermingly enforces a pedestrian phase every cycle. Findings indicate substantial improvements with DGMARL, showing a 28.29% enhancement in vehicle Eco_PI, a 60.55 % reduction in pedestrian waiting time, and a 55.74% decrease in driver stop delay, on average, compared to the baseline actuated signal timing plan.

Kumarasamy, Vijayalakshmi K [The University of Ten↗