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At least 1,027 records · Page 57

Conversion between triplet pair states is controlled by molecular coupling in pentadithiophene thin films

In singlet fission (SF) the initially formed correlated triplet pair state, 1 (TT), may evolve toward independent triplet excitons or higher spin states of the (TT) species. The latter result is often considered undesirable from a light harvesting perspective but may be attractive for quantum information sciences (QIS) applications, as the final exciton pair can be spin-entangled and magnetically active with relatively long room temperature decoherence times. In this study we use ultrafast transient absorption (TA) and time-resolved electron paramagnetic resonance (TR-EPR) spectroscopy to monitor SF and triplet pair evolution in a series of alkyl silyl-functionalized pentadithiophene (PDT) thin films designed with systematically varying pairwise and long-range molecular interactions between PDT chromophores. The lifetime of the (TT) species varies from 40 ns to 1.5 μs, the latter of which is associated with extremely weak intermolecular coupling, sharp optical spectroscopic features, and complex TR-EPR spectra that are composed of a mixture of triplet and quintet-like features. On the other hand, more tightly coupled films produce broader transient optical spectra but simpler TR-EPR spectra consistent with significant population in 5 (TT) 0 . These distinctions are rationalized through the role of exciton diffusion and predictions of TT state mixing with low exchange coupling J versus pure spin substate population with larger J. The connection between population evolution using electronic and spin spectroscopies enables assignments that provide a more detailed picture of triplet pair evolution than previously presented and provides critical guidance for designing molecular QIS systems based on light-induced spin coherence.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Cathodic NH 4 + leaching of nitrogen impurities in CoMo thin-film electrodes in aqueous acidic solutions

Electrocatalytic reduction of dinitrogen (N 2 ) to ammonium (NH 4 + ) in acidic aqueous solutions was investigated at ambient temperature and pressure using a cobalt–molybdenum (CoMo) thin-film electrode prepared by magnetron reactive sputtering. Increased concentrations of ammonium ions (NH 4 + ) were consistently detected in the electrolyte using ion chromatography (IC) after constant-potential electrolysis at various potentials (≤-0.29 V vs. RHE). Using a newly developed analytical method based on ammonia derivatization, performing the experiments with 15 N 2 -labelled gas led however to the detection of increased 14 NH 4 + concentrations instead of 15 NH 4 + . X-ray photoelectron spectroscopic (XPS) analysis of the electrode surface revealed the presence of Mo[triple bond, length as m-dash]N and Mo–NH x species. Several contamination sources were identified that led to substantial increases in the concentration of ammonium ions, including 15 NH 3 impurities in 15 N 2 gas. The observed ammonium concentrations can be consistently ascribed to leaching of nitrogen ( 14 N) impurities incorporated in the CoMo film during the sputtering process. Therefore, researchers in the field are urged to adopt extended protocols to identify and eliminate sources of ammonia contamination and to very carefully monitor the ammonium concentrations in each experimental step.

36 MATERIALS SCIENCE↗

Investigation of Rh–titanate (ATiO 3 ) interactions on high-surface-area perovskite thin films prepared by atomic layer deposition

Thin, ~1 nm films of CaTiO 3 , SrTiO 3 , and BaTiO 3 were deposited onto MgAl 2 O 4 by Atomic Layer Deposition (ALD) and studied as catalyst supports for Rh. Scanning Transmission Electron Microcopy (STEM) and X-Ray Diffraction (XRD) demonstrated that the films had the perovskite structure and formed uniform coatings stable up to 1073 K. Rh, added by ALD, interacted strongly with CaTiO 3 and somewhat less strongly with SrTiO 3 , while Rh on BaTiO 3 was similar to Rh on unmodified MgAl 2 O 4 . STEM measurements of Rh on CaTiO 3 films showed Rh remained well dispersed after repeated oxidations and reductions at 1073 K; however, the Rh was inactive for CO-oxidation. Rh formed small particles on SrTiO 3 films and was active for CO oxidation after reduction at 1073 K. The reducibility and catalytic activity of Rh/BaTiO 3 /MgAl 2 O 4 were similar to that of Rh/MgAl 2 O 4 . Evidence from CO-TPR, FTIR, and XPS all indicated that the degree of interaction between Rh and the three perovskite films can be ranked in the following order: Rh/CaTiO 3 /MgAl 2 O 4 > Rh/SrTiO 3 /MgAl 2 O 4 > Rh/BaTiO 3 /MgAl 2 O 4 . Here, bulk ex-solution catalysts, synthesized by reduction of ATi 0.98 Rh 0.02 O 3 (A = Ca, Sr, and Ba), were also examined for comparison.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tuning electronic properties in LaNiO 3 thin films by B-site Cu-substitution

Resistors are essential parts of futuristic all-oxide electronic architectures, yet easily overlooked due to their apparent simplicity. In this study, design of thin films with specific resistance spanning six orders of magnitude by partial substitution of Cu 2+ for Ni 3+ in the metallic conductor LaNiO 3 is shown. Substitution is attainable across the whole composition range using atomic layer deposition on LaAlO 3 (100) pc substrates, however with some inclusion of Ruddlesden–Popper RP1 phase (La 2 CuO 4 ) at high levels of Cu-incorporation. The thermal stability of the resistance is based on a metal–insulator transition that evolves from non-existent for LaNiO 3 to above room-temperature for high Cu 2+ substitution. This provides further insight in the metal–insulator transition found for correlated rare-earth nickelates, especially the type of transition seen for ultrathin films of LaNiO 3 that is usually attributed to oxygen vacancy formation. Materials with variable resistivity and metal–insulator-transition temperatures are key in the design of futuristic electronics such as metal–insulator-transition-driven neuromorphic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Direct intercalation of MoS 2 and WS 2 thin films by vacuum filtration

In the development of next-generation electronics and energy devices, intercalation compounds of transition metal dichalcogenides (TMDCs) are gaining attention for their unique properties that result from synergistic interactions between guest species and host materials. Nowadays, intercalation compounds of MoS 2 and WS 2 are commonly prepared by a two-step process: (1) exfoliation to form single-layer and/or few-layer nanosheets and (2) restacking the nanosheets with the guest species by vigorously mixing the exfoliated suspension with the solution of guest species. While a wide variety of intercalation compounds have been synthesized using this approach, the intercalation process is often timeconsuming, and the product slurry limits material quality and impedes characterization and applications. Herein, we report a versatile method for preparing intercalated TMDCs in a thin-film morphology. Using this approach, we successfully prepared a range of existing intercalation compounds of MoS 2 and WS 2 (e.g., ferrocene and amine intercalated MoS 2 and WS 2 ). Additionally, by leveraging the versatility of this intercalation method, we report we intercalated phenazine and benzoquinone into MoS 2 and WS 2 for the first time.

36 MATERIALS SCIENCE↗

Domain state exchange bias in a single layer FeRh thin film formed via low energy ion implantation

Modern spintronics relies heavily on the exchange bias effect to pin the orientation of ferromagnetic layers in magnetic tunnel junctions. The current implementations of exchange bias in magnetic tunnel junctions employ pristine interfaces between antiferromagnetic and ferromagnetic layers. Here we reveal an interfacial exchange bias introduced by a single-step, low-energy ion implantation process in a single layer FeRh thin film. Both 1 keV He + ions and 5 keV Fe + were investigated, their energy selected to ensure the ions would stop within the FeRh film. The ions reduce the metamagnetic transition temperature through defect generation to form a surface layer with ferromagnetic ordering. Temperature dependent magnetism measurements reveal a room temperature exchange bias between the ferromagnetic surface and the antiferromagnetic bulk of ~41 Oe in 5 keV Fe + implanted samples and ~36 Oe for 1 keV He + implanted samples. We directly scrutinize this exchange bias effect in magnetic depth profiles obtained by polarized neutron reflectometry which clearly show a pinned ferromagnetic layer adjacent to the disordered layer created by low energy Fe + ion implantation. These results reveal a novel method to implement exchange bias in an antiferromagnetic layer that can have direct application in the field of spintronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Pulsed laser deposition of delafossite oxide thin films on YSZ (001) substrates as solar water splitting photocathodes

Development of solar energy converters with earth-abundant and environmentally friendly materials is one of the key routes explored towards a sustainable future. In this work, crystalline delafossite-phase CuAlO 2 and CuFeO 2 thin film solar water splitting photocathodes were fabricated using pulsed laser deposition. It was found that the desired delafossite phase was formed only after high temperature annealing in an oxygen-free atmosphere. Further, the homogeneous delafossite bulk structure of the films was determined by correlating simulation results from first-principles calculations with synchrotron-based X-ray absorption near edge structure (XANES) spectroscopy. Both CuAlO 2 and CuFeO 2 photocathodes are active for solar water splitting, with the latter more efficient due to its narrower band gap and improved light absorption.

36 MATERIALS SCIENCE↗