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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The feasibility of a reactively sputtered thin film CdS - Cu2S solar cell is proven. Identification of the reactively sputtered Cu2S film is made by X-ray diffractometer and spectro-transmission measurements. Because of its simplicity, economical use of material, and high yield, the reactive sputtering process promises to be a low cost method for producing CdS - Cu2S solar cells.
A study on low cost polycrystalline thin film CdS/CdTe and CdS/CuInSe2 solar cells using measurements of spectral response and capacitance-voltage-frequency relationships was performed. Because of high concentrations of localized levels in the energy gap existing in materials and at interfaces, the redistribution of charge among the levels due to illumination plays an important role in the collection of light-generated current in these cells. The results illustrate some related phenomena observed in these cells.
The design of a thin-film solar cell module is dependent on the probability of occurrence of pinhole shunt defects. Using known or assumed defect density data, dichotomous population statistics can be used to calculate the number of defects expected in a module. Probability theory is then used to assign the defective cells to individual strings in a selected series-parallel circuit design. Iterative numerical calculation is used to calcuate I-V curves using cell test values or assumed defective cell values as inputs. Good and shunted cell I-V curves are added to determine the module output power and I-V curve. Different levels of shunt resistance can be selected to model different defect levels.
Electromigration failure in highly oriented YBa2Cu3O(7-x) thin films below the superconducting transition temperature is reported here for the first time. The film on SrTiO3 failed at 86 K, 230,000 A/sq cm, while that on LaAlO3 failed at 84 K, 930,000 A/sq cm. Scanning electron microscopy and energy dispersive X-ray analysis of the films after failure shows that Cu migrates preferentially away from the failure region toward the electrode.
The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.
Humidity and simulated space environment effect on various cadmium-sulfide thin film solar cells, noting degradation rates
Thin film resistors as source followers in summing resistor network module of communication system
The Lightweight Integrated Solar Array and Transceiver (LISA-T) experiment consists of thin-film, low mass, low volume solar panels. Given the variety of thin solar cells and cover materials and the lack of environmental protection typically afforded by thick coverglasses, a series of tests were conducted in Marshall Space Flight Center's Space Environmental Effects Facility to evaluate the performance of these materials. Candidate thin polymeric films and nitinol wires used for deployment were also exposed. Simulated space environment exposures were selected based on SSP 30425 rev. B, "Space Station Program Natural Environment Definition for Design" or AIAA Standard S-111A-2014, "Qualification and Quality Requirements for Space Solar Cells." One set of candidate materials were exposed to 5 eV atomic oxygen and concurrent vacuum ultraviolet (VUV) radiation for low Earth orbit simulation. A second set of materials were exposed to 1 MeV electrons. A third set of samples were exposed to 50, 100, 500, and 700 keV energy protons, and a fourth set were exposed to >2,000 hours of near ultraviolet (NUV) radiation. A final set was rapidly thermal cycled between -55 and +125 C. This test series provides data on enhanced power generation, particularly for small satellites with reduced mass and volume resources. Performance versus mass and cost per Watt is discussed.
The Lightweight Integrated Solar Array and Transceiver (LISA-T) experiment consists of thin-film, low mass, low volume solar panels. Given the variety of thin solar cells and cover materials and the lack of environmental protection afforded by typical thick coverglasses, a series of tests were conducted in Marshall Space Flight Center's Space Environmental Effects Facility to evaluate the performance of these materials. Candidate thin polymeric films and nitinol wires used for deployment were also exposed. Simulated space environment exposures were selected based on SSP 30425 rev. B, "Space Station Program Natural Environment Definition for Design" or AIAA Standard S-111A-2014, "Qualification and Quality Requirements for Space Solar Cells." One set of candidate materials were exposed to 5 eV atomic oxygen and concurrent vacuum ultraviolet (VUV) radiation for low Earth orbit simulation. A second set of materials were exposed to 1 MeV electrons. A third set of samples were exposed to 50, 500, and 750 keV energy protons, and a fourth set were exposed to >2,000 hours of ultraviolet radiation. A final set was rapidly thermal cycled between -50 and +120 C. This test series provides data on enhanced power generation, particularly for small satellites with reduced mass and volume resources. Performance versus mass and cost per Watt is discussed.
The Lightweight Integrated Solar Array and Transceiver (LISA-T) experiment consists of thin-film, low mass, low volume solar panels. Given the variety of thin solar cells and cover materials and the lack of environmental protection typically afforded by thick coverglasses, a series of tests were conducted in Marshall Space Flight Center's Space Environmental Effects Facility to evaluate the performance of these materials. Candidate thin polymeric films and nitinol wires used for deployment were also exposed. Simulated space environment exposures were selected based on SSP 30425 rev. B, "Space Station Program Natural Environment Definition for Design" or AIAA Standard S-111A-2014, "Qualification and Quality Requirements for Space Solar Cells." One set of candidate materials were exposed to 5 eV atomic oxygen and concurrent vacuum ultraviolet (VUV) radiation for low Earth orbit simulation. A second set of materials were exposed to 1 MeV electrons. A third set of samples were exposed to 50, 100, 500, and 700 keV energy protons, and a fourth set were exposed to >2,000 hours of near ultraviolet (NUV) radiation. A final set was rapidly thermal cycled between -55 and +125degC. This test series provides data on enhanced power generation, particularly for small satellites with reduced mass and volume resources. Performance versus mass and cost per Watt is discussed.
Blending block copolymers (BCP) with additives is a useful approach for controlling BCP morphology and properties. In athermal systems, blends of BCPs with polymer additives having very high molecular (M n ) mass generally result in macrophase separation. Bottlebrush polymers, which consist of a linear backbone and grafted side chains, present an interesting alternative where the overall M n of the system can be very large but the low M n side chains may drive miscibility with the BCP. Here, in this study, a bottlebrush with a polynorbornene backbone and polystyrene (PS) side chains is blended with PS-b-poly(methyl methacrylate) (PS-b-PMMA) of varying M n , and the resulting morphologies are examined in both the bulk and thin films. Two different M n of PS-b-PMMA were used in the bulk study, and the analysis of small-angle X-ray scattering data shows that the blends were miscible and lamellar at all concentrations. This deviates from reference series of both low and high M n linear polymer additives, which either showed morphological transitions from lamellae to cylinders (low M n ) or were immiscible at all mass fractions studied (high M n ). The relative molecular mass of the side chain (N SC ) and the corresponding component in the BCP (N A ) dictate the distribution of the bottlebrush throughout the BCP, analogous to BCP/linear blends or grafted nanoparticles in a homopolymer matrix. The studies on thin films show a thickness dependence for bottlebrush mass fractions at or above 0.17, a behavior which may be driven by conformational changes of the bottlebrush upon confinement.
As a significant semiconductor, nickel selenide shows enormous potential and extensive application prospects in the field of sensor, photocatalysis and supercapacitor. In this paper, nickel selenide (Ni 3 Se 2 , NiSe) thin films were successfully fabricated on stainless-steel sheet using a facile, effective electrodeposition technique. The morphologies, microstructures and chemical compositions of the thin films are characterized systematically. Electrochemical tests exhibit that the Ni3Se2 and NiSe possess high specific capacitance of 581.1 F/g and 1644.7 F/g, respectively. A flexible, all-solid-state asymmetric supercapacitor is assembled by utilizing NiSe film as positive electrode and activated carbon as negative electrode. The solid device delivers a high areal capacitance of 27.0 mF/cm 2 at the current density of 0.7 mA/cm 2 . Furthermore, the maximum volumetric energy density and power density of the NiSe//AC asymmetric SCs can achieve 0.26 mWh/cm 3 and 33.35 mW/cm 3 , respectively. The device shows robust cycling stability with 84.6% capacitance retention after 10000 cycles, outstanding flexibility and satisfactory mechanical stability. Moreover, two devices in series can light up a red light-emitting diode, which displayed great potential applications for energy storage.
The discovery of superconductivity in the bulk nickelates under high pressure is a major advance in physics. The recent observation of superconductivity at ambient pressure in compressively strained bilayer nickelate thin films has now enabled direct characterization of the superconducting phase through angle resolved photoemission spectroscopy (ARPES). Here we present an in-situ ARPES study of compressively strained La$_2$PrNi$_2$O$_7$ films grown by oxide molecular beam epitaxy, and the ozone treated counterparts with an onset T$_c$ of 40 K, supplemented with results from pulsed laser deposition films with similar T$_c$. We resolve a systematic strain-driven electronic band shift with respect to that of bulk crystals, in qualitative agreement with density functional theory (DFT) calculations. However, the strongly renormalized flat 3$d_{z2}$ band shifts a factor of 5-10 smaller than anticipated by DFT. Furthermore, it stays ~70 meV below the Fermi level, contradicting the expectation that superconductivity results from the high density of states of this band at the Fermi level. We also observed a non-trivial k$_z$ dispersion of the cuprate-like 3$d_{x2-y2}$ band. Combined with results from both X-ray diffraction and DFT, we suggest that the strained films are under ~5 GPa effective pressure, considerably larger than the naïve expectation from the DFT relaxed structure. Finally, the ~70 meV energy position is intriguingly close to the collective mode coupling more prominently seen in thin films, in the energy range of both oxygen related phonons and the maximum of the spin excitation spectrum.
The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented.
We examine techniques for achieving zero intrinsic stress in thin films of iridium, chromium, and nickel deposited by magnetron sputter deposition. The intrinsic stress is further correlated to the microstructural features and physical properties such as surface roughness and optical density at a scale appropriate to soft X-ray wavelengths. The examination of the stress in these materials is motivated by efforts to advance the optical performance of light-weight X-ray space telescopes into the regime of sub-arcsecond resolution through various deposition techniques that rely on control of the film stress to values within 10-100 MPa. A characteristic feature of the intrinsic stress behavior in chromium and nickel is their sensitivity to the magnitude and sign of the intrinsic stress with argon gas pressure and deposition rate, including the existence of a critical argon process pressure that results in zero film stress which scales linearly with the atomic mass of the sputtered species. While the effect of stress reversal with argon pressure has been previously reported by Hoffman and others for nickel and chromium, we report this effect for iridium. In addition to stress reversal, we identify zero stress in the optical functioning iridium layer shortly after island coalescence for low process pressures at a film thickness of approximately 35nm. The measurement of the low values of stress during deposition was achieved with the aid of a sensitive in-situ instrument capable of a minimum detectable level of stress, assuming a 35nm thick film, in the range of 0.40-6.0 MPa for <111> oriented crystalline silicon substrate thicknesses of 70-280 microns, respectively.
Thin film triodes, magnetic permeability films, metal base transistor devices, inductors, dielectrics, and high frequency substrates for communications and telemetry system
The Space Shuttle Main Engine (SSME) turbine environment stresses engine components to their design limits and beyond. The extremely high temperatures and rapid temperature cycling can easily cause parts to fail if they are not properly designed. Thin film heat flux sensors can provide heat loading information with almost no disturbance of gas flows or of the blade. These sensors can provide steady state and transient heat flux information. A thin film heat flux sensor is described which makes it easier to measure small temperature differences across very thin insulating layers.
Oxygen vacancies (VO), even in the dilute regime, can significantly impact the physical and chemical properties of complex oxides. It is however challenging to reliably detect and adequately quantify such defects in thin film samples where the VO concentration and distribution may further vary in response to interfacial strain. Here, we present a method to quantify VO concentrations in SrFe0.5Cr0.5O3−δ (SFCO) epitaxial thin films. Through coherent Bragg rod analysis, X-ray absorption spectroscopy, and theoretical modeling, we systematically correlate the c-axis lattice expansion detected in SFCO films with a VO concentration gradient. Our results reveal a nearly linear relationship between oxygen off-stoichiometry and out-of-plane lattice expansion in coherently strained SFCO films, with δ increasing from 0.32 to 0.52 and the lattice expanding by ∼1.0%. Moreover, a significant decrease in Cr oxidation state (from Cr5+ to Cr3+) is observed as the VO concentration increases, while the Fe oxidation state remains fixed at Fe3+. Our findings provide a reliable way to quantify oxygen stoichiometry in complex oxides, offering a pathway to design materials with precisely tailored structure–property relationships.