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Simple technique for producing silicon for solar cells employs solid sodium to reduce silicon fluoride. Since solid rather than liquid sodium is used, careful temperature control is unnecessary, and simple feed equipment is used. Technique is energy-efficient, since reaction produces enough heat to sustain itself.
Process reacts alumina hydrate with HF and NaF from silicon-production process. Cryolite is produced by adding reaction step to process that makes high-purity silicon from fluorosilicic acid. New extended process has been demonstrated in laboratory and could be used in commercial plants.
New method of extracting silicon from mixture produced when silicon tetrafluoride is reduced by sodium takes advantage of lower melting point of NaF. Method is effective at temperatures up to 400 degrees C below melting point of Si. Results in energy and economic savings: simpler and smaller furnaces, less volatization loss, and high percentage of separation.
Proposed three-part conduit transfers pure silicon between crucibles. Four-strip heater augments layers of insulation to prevent molten silicon from cooling and solidifying during transfer. Since melt is maintained at temperature relatively close to fusion point, to minimize quartz erosion, even relatively-minor heat losses precipitate solidification and terminate work in progress. Several crucibles may be fed through conduits from central crucible. Each would be contained in its own compartment under inert atmosphere.
Silicon wafers subjected to gettering in phosphorus atmosphere have longer diffusion lengths and higher solar-cell efficiencies than untreated wafers. Gettering treatment improves properties of solar cells manufactured from impure silicon and is compatible with standard solar-cell processing.
Concentration of carbide impurities in silicon ribbon is reduced by growing crystalline ribbon with die one wall higher than other. Height difference controls shape of meniscus at liquid/crystal interface and concentrates silicon carbide impurity near one of broad faces. Opposite face is left with above-average purity. Significantly improves efficiency of solar cells made from ribbon.
Concept for "microcomputer on a slice" reduces microcomputer costs by eliminating scribing, wiring, and packaging of individual circuit chips. Low-cost microcomputer on silicon slice contains redundant components. All components-central processing unit, input/output circuitry, read-only memory, and random-access memory (CPU, I/O, ROM, and RAM) on placed on single silicon wafer.
When high purity silicon is synthesized by reduction of silicon tetrafluoride by sodium, very-fast highly exothermic reaction takes place. Controlled reaction is proposed in which SiF4-pressurized vertical reactor operates with two temperature zones. Liquid sodium feeds from nozzle at top of rector without reacting with SiF4. When sodium reaches higher temperature region at bottom, reaction takes place immediately.
Solid ribbon of silicon pulled horizontally over lip of crucible. As heat leaves silicon by radiation, conduction, and convections, surface layer solidifies from liquid. Horizontal growth of ribbon offers several advantages over vertical growth. It is faster--possibly 1 to 2 centimeters per second-and is done without using drawing dies, source of contamination in vertical growth.
Solar cells were fabricated from EFG ribbons dendritic webs, cast ingots by heat exchanger method, and cast ingots by ubiquitous crystallization process. Baseline and other process variations were applied to fabricate solar cells. EFG ribbons grown in a carbon-containing gas atmosphere showed significant improvement in silicon quality. Baseline solar cells from dendritic webs of various runs indicated that the quality of the webs under investigation was not as good as the conventional CZ silicon, showing an average minority carrier diffusion length of about 60 um versus 120 um of CZ wafers. Detail evaluation of large cast ingots by HEM showed ingot reproducibility problems from run to run and uniformity problems of sheet quality within an ingot. Initial evaluation of the wafers prepared from the cast polycrystalline ingots by UCP suggested that the quality of the wafers from this process is considerably lower than the conventional CZ wafers. Overall performance was relatively uniform, except for a few cells which showed shunting problems caused by inclusions.
The role of surface recombination velocity in the design and fabrication of silicon solar cells is discussed. A scanning electron microscope with pulsed electron beam was used to measure this parameter of silicon surfaces. It is shown that the surface recombination velocity, s, increases by an order of magnitude when an etched surface degrades, probably as a result of environmental reaction. A textured front-surface-field cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem-junction cell shows an increasing s value. Electric fields at junction interfaces in front-surface-field and tandem-junction cells acting as minority carrier reflectors or sinks tend to alter the value of effective surface recombination velocity for different beam penetration depths. A range of values of s was calculated for different surfaces.
A two inch-diameter stainless steel reactor was designed to operate at pressure up to 500 psig and at temperature up to 600 C in order to study the hydrochlorination of silicon tetrachloride and metallurgical grade (m.g.) silicon metal to trichlorosilane. The hydrochlorination apparatus is described and operation safety and pollution control are discussed.
The progress made in silicon carbide semiconductor devices in the 1955 to 1975 time frame is examined and reasons are given for the present lack of interest in the material. Its physical and chemical properties and methods of preparation are discussed. Fabrication techniques and the characteristics of silicon carbide devices are reviewed. It is concluded that a combination of economic factors and the lack of progress in fabrication techniques leaves no viable market for SiC devices in the near future.
The web growth process, a silicon-sheet technology option, developed for the flat plate solar array (FSA) project, was examined. Base case data for the technical and cost parameters for the technical and commercial readiness phase of the FSA project are projected. The process add on price, using the base case data for cost parameters such as equipment, space, direct labor, materials and utilities, and the production parameters such as growth rate and run length, using a computer program developed specifically to do the sensitivity analysis with improved price estimation are analyzed. Silicon price, sheet thickness and cell efficiency are also discussed.
Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.
Chemical engineering analysis was continued for the HSC process (Hemlock Semiconductor Corporation) in which solar cell silicon is produced in a 1,000 MT/yr plant. Progress and status are reported for the primary engineering activities involved in the preliminary process engineering design of the plant base case conditions (96%), reaction chemistry (96%), process flow diagram (85%), material balance (85%), energy balance (60%), property data (60%), equipment design (40%), major equipment list (30%) and labor requirements (10%). Engineering design of the second distillation column (D-02, TCS column) in the process was completed. The design is based on a 97% recovery of the light key (TCS, trichlorosilane) in the distillate and a 97% recovery of the heavy key (TET, silicon tetrachloride) in the bottoms. At a reflux ratio of 2, the specified recovery of TCS and TET is achieved with 20 trays (equilibrium stages, N=20). Respective feed tray locations are 9, 12 and 15 (NF sub 1 = 9, NF sub 2 = 12,, and NF sub 3 = 15). A total condenser is used for the distillation which is conducted at a pressure of 90 psia.
The design analysis of a silicon power conversion system for the solar power satellite (SPS) is summarized. The solar array, consisting of glass encapsulated 50 micrometer silicon solar cells, is described. The general scheme for power distribution to the array/antenna interface is described. Degradation by proton irradiation is considered. The interface between the solar array and the klystron equipped power transmitter is described.
The cost of producing wafers from silicon ingots is a major component of the add-on price of silicon sheet. Economic analyses of the add-on price estimates and their sensitivity internal-diameter (ID) sawing, multiblade slurry (MBS) sawing and fixed-abrasive slicing technique (FAST) are presented. Interim price estimation guidelines (IPEG) are used for estimating a process add-on price. Sensitivity analysis of price is performed with respect to cost parameters such as equipment, space, direct labor, materials (blade life) and utilities, and the production parameters such as slicing rate, slices per centimeter and process yield, using a computer program specifically developed to do sensitivity analysis with IPEG. The results aid in identifying the important cost parameters and assist in deciding the direction of technology development efforts.