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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,027 records · Page 57
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Atomically resolved force microscopy at room temperature

Atomic force microscopy (AFM) can now not only image individual atoms but also construct atom letters using atom manipulation method even at room temperature (RT). Therefore, the AFM is the second generation atomic tool following the scanning tunneling microscopy (STM). However the AFM can image even insulating atoms, and also directly measure/map the atomic force and potential at the atomic scale. Noting these advantages, we have been developing a bottom-up nanostructuring system at RT based on the AFM. It can identify chemical species of individual atoms and then manipulate selected atom species to the predesigned site one-by-one to assemble complex nanostructures consisted of multi atom species at RT. Here we introduce our results toward atom-by-atom assembly of composite nanostructures based on the AFM at RT including the latest result on atom gating of nano-space for atom-by-atom creation of atom clusters at RT for semiconductor surfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Room temperature ferromagnetism in Co defused CdTe nanocrystalline thin films

Nanocrystalline Co defused CdTe thin films were prepared using electron beam evaporation technique by depositing CdTe/Co/CdTe stacked layers with different Co thickness onto glass substrate at 373 K followed by annealing at 573K for 2 hrs. Structural, morphological and magnetic properties of of all the Co defused CdTe thin films has been investigated. XRD pattern of all the films exhibited zinc blende structure with <111> preferential orientation without changing the crystal structure of the films. The grain size of the films increased from 31.5 nm to 48.1 nm with the increase of Co layer thickness from 25nm to 100nm. The morphological studies showed that uniform texture of the films and the presence of Co was confirmed by EDAX. Room temperature magnetization curves indicated an improved ferromagnetic behavior in the films with increase of the Co thickness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Room temperature resistive state switching with hysteresis in GdMnO{sub 3} thin film with low threshold voltage

In this paper, we report a room temperature resistive state switching with hysteresis, in a thin film of GdMnO{sub 3} grown on NdGaO{sub 3} substrate. The switched states have a resistance ratio ≈10{sup 3}. The switching is unipolar in nature, with a low set voltage <3 V, while the reset voltage <0.3 V. The switching occurs between a high resistance polaronic insulating state and a low resistance metallic state. The resistance state transition has been ascribed to an electronic mechanism that originates from co-existing phases (created by charge disproportionation) that can undergo a percolative transition enabled by the applied bias.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Luminescence thermometry below room temperature via up-conversion emission of Y{sub 2}O{sub 3}:Yb{sup 3+},Er{sup 3+} nanophosphors

This study explores potential of Er{sup 3+}-Yb{sup 3+} doped phosphors for up-conversion luminescence thermometry in the temperature range from 10 K to 300 K. Yttrium oxide nanopowder doped with trivalent ytterbium and erbium ions (Y{sub 1.97}Yb{sub 0.02}Er{sub 0.01}O{sub 3}) was prepared by hydrothermal synthesis as an example. The intensity ratios of up-conversion emissions from thermally coupled {sup 2}H{sub 11/2} and {sup 4}S{sub 3/2} levels of Er{sup 3+} show strong temperature dependence (in the range 150 K–300 K) with much higher relative sensitivity than those reported for thermometry above room temperature with Er{sup 3+}-Yb{sup 3+} based up-conversion materials. The maximal value of relative sensitivity is 5.28%K{sup −1} at 150 K, with temperature resolution ranging from 0.81 K to 0.06 K. In addition, the intensity ratios of emission from thermally non-coupled Er{sup 3+} levels ({sup 2}H{sub 9/2} and {sup 4}F{sub 9/2}) and from {sup 4}S{sub 3/2} also show temperature dependence that can be approximated with an exponential function. With these up-conversion emission ratios, it is possible measure temperature in the range of 10 K to 300 K with excellent sensitivity and resolution.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Room temperature multiferroic properties and magnetoelectric coupling in Sm and Ni substituted Bi{sub 4−x}Sm{sub x}Ti{sub 3−x}Ni{sub x}O{sub 12±δ} (x = 0, 0.02, 0.05, 0.07) ceramics

Lead free multiferroic Bi{sub 4−x}Sm{sub x}Ti{sub 3−x}Ni{sub x}O{sub 12±δ} (x = 0.02, 0.05, and 0.07) samples have been synthesized by conventional solid state route. X-ray diffraction analysis reveals single phase up to x = 0.07, and a secondary phase appears at x > 0.07. Raman spectroscopy confirms the local distortions in the crystal. Field emission scanning electron microscopy shows plate like grains. Substitution has increased the orthorhombic distortion, grain size, and hence the ferroelectric transition temperature (T{sub c}). A significant reduction in the values of dielectric constant (ε′) and loss tangent (tan δ) has been observed with the increase of Sm and Ni ions. The increase in dc resistivity at room temperature has been found with substitution. Enhancement in the values of remnant polarization (2P{sub r}) and magnetization (2M{sub r}) is observed. Magnetoelectric coupling coefficient (α) values of 0.60 mV/cm/Oe are achieved in Bi{sub 4−x}Sm{sub x}Ti{sub 3−x}Ni{sub x}O{sub 12±δ} ceramic samples. Hence, we have successfully converted the ferroelectric Bi{sub 4}Ti{sub 3}O{sub 12} into a multiferroic, which is a new lead free multiferroic material, can be useful for future electromagnetic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Continuous operation of a monolithic semiconductor terahertz source at room temperature

We demonstrate room temperature continuous wave THz sources based on intracavity difference-frequency generation from mid-infrared quantum cascade lasers. Buried ridge, buried composite distributed-feedback waveguide with Čerenkov phase-matching scheme is used to reduce the waveguide loss and enhance the heat dissipation for continuous wave operation. Continuous emission at 3.6 THz with a side-mode suppression ratio of 20 dB and output power up to 3 μW are achieved, respectively. THz peak power is further scaled up to 1.4 mW in pulsed mode by increasing the mid-infrared power through increasing the active region doping and device area.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers

Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers are proposed and demonstrated. The nanowires are axially excited by evanescent wave outside a microfiber with a diameter about 10 μm via a ns-pulse laser. The lasing emission with a low effective threshold less than 90 nJ is achieved at 868.62 nm along with a linewidth of ∼1.8 nm. Moreover, multiple lasing lines in a wavelength range from 852.56 nm to 882.48 nm are observed. The mechanism of diverse lasing wavelengths is revealed. Furthermore, the proposed GaAs/AlGaAs nanowire laser has advantages such as simple structure, easy to operate, and controllable lasing wavelength, tending to be practical in optical communications and integrated photonic circuits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Observation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots

Room temperature optical absorption process is observed in ultrathin quantum wells (QWs) and quantum dots (QDs) of InP/GaAs type-II band alignment system using surface photovoltage spectroscopy technique, where no measurable photoluminescence signal is available. Clear signature of absorption edge in the sub band gap region of GaAs barrier layer is observed for the ultrathin QWs and QDs, which red shifts with the amount of deposited InP material. Movement of photogenerated holes towards the sample surface is proposed to be the main mechanism for the generation of surface photovoltage in type-II ultrathin QWs and QDs. QDs of smaller size are found to be free from the dislocations as confirmed by the high resolution transmission electron microscopy images.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Density dependence of the room temperature thermal conductivity of atomic layer deposition-grown amorphous alumina (Al{sub 2}O{sub 3})

We report on the thermal conductivity of atomic layer deposition-grown amorphous alumina thin films as a function of atomic density. Using time domain thermoreflectance, we measure the thermal conductivity of the thin alumina films at room temperature. The thermal conductivities vary ∼35% for a nearly 15% change in atomic density and are substrate independent. No density dependence of the longitudinal sound speeds is observed with picosecond acoustics. The density dependence of the thermal conductivity agrees well with a minimum limit to thermal conductivity model that is modified with a differential effective-medium approximation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Orthorhombic-tetragonal phase coexistence and enhanced piezo-response at room temperature in Zr, Sn, and Hf modified BaTiO{sub 3}

The effect of Zr, Hf, and Sn in BaTiO{sub 3} has been investigated at close composition intervals in the dilute concentration limit. Detailed structural analysis by x-ray and neutron powder diffraction revealed that merely 2 mol. % of Zr, Sn, and Hf stabilizes a coexistence of orthorhombic (Amm2) and tetragonal (P4mm) phases at room temperature. As a consequence, all the three systems show substantial enhancement in the longitudinal piezoelectric coefficient (d{sub 33}), with Sn modification exhibiting the highest value ∼425 pC/N.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A magnetically shielded room with ultra low residual field and gradient

A versatile and portable magnetically shielded room with a field of (700 ± 200) pT within a central volume of 1 m × 1 m × 1 m and a field gradient less than 300 pT/m, achieved without any external field stabilization or compensation, is described. This performance represents more than a hundredfold improvement of the state of the art for a two-layer magnetic shield and provides an environment suitable for a next generation of precision experiments in fundamental physics at low energies; in particular, searches for electric dipole moments of fundamental systems and tests of Lorentz-invariance based on spin-precession experiments. Studies of the residual fields and their sources enable improved design of future ultra-low gradient environments and experimental apparatus. This has implications for developments of magnetometry beyond the femto-Tesla scale in, for example, biomagnetism, geosciences, and security applications and in general low-field nuclear magnetic resonance (NMR) measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

We report on the identification of an optimum deposited amount of AlGaN in AlGaN/AlN quantum dot (QD) superlattices grown by molecular-beam epitaxy, which grants maximum luminescence at room temperature by finding a compromise between the designs providing maximum internal quantum efficiency (60%) and maximum QD density (9.0 × 10{sup 11 }cm{sup −2}). The average Al composition in the QDs is estimated at 10.6% ± 0.8% by combining x-ray diffraction measurements with three-dimensional calculations of the strain distribution. The effect of the variation of the QD height/base-diameter ratio on the interband and intraband optical properties was explored by fitting the experimental data with three-dimensional calculations of the band diagram and quantum confined states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

In this work, we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5 μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77–325 K temperature range, indicating potential for room temperature operation. The current generation of nBn detectors shows an increase of operational bias with temperature, which is attributed to a shift in the Fermi energy level in the absorber. Analysis of the device performance shows that operational bias and quantum efficiency of these detectors can be further improved. The device dark current stays diffusion limited in the 150 K–325 K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities are D*(λ) = 1 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 300 K and D*(λ) = 5 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 250 K, which is easily achievable with a one stage TE cooler.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Multiple phases of Cu{sub 2}ZnSnSe{sub 4} detected by room temperature photoluminescence

Cu{sub 2}ZnSnSe{sub 4} based solar cells are promising but suffer from low open circuit voltage relative to their band gap. Additionally, the bandgap as extrapolated from quantum efficiency (QE) measurements varies without clear correlation to the growth conditions. Using room temperature photoluminescence, we show that different materials with different bandgaps coexist within micrometer sized areas of the absorbers. Simulations of the effect of multiple bandgaps on both the absorption and the Shockley-Queisser radiative recombination limit, explain the variations of the bandgap extrapolated from QE and the deficiencies of the solar cell parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Room temperature ferromagnetism in Co-doped amorphous carbon composites from the spin polarized semiconductor band

This study provides conclusive evidence of room temperature ferromagnetism in Co-doped amorphous carbon (a-C) composites from the spin polarized semiconductor band. These composites are constructed from discontinuous [Co(3 nm)/a-C(d{sub c} nm)]{sub 5} multilayers with d{sub c} = 3 nm and d{sub c} = 6 nm. Only remnant circular dichroism (CD) was observed from the d{sub c} = 3 nm sample but not when d{sub c} = 6 nm. In addition, the remnant CD peaks at 5.5 eV, which is comparable with the absorption peak associated with the C σ-σ* gap transition. We suggest that the possible mechanism for this coupling can be considered as a magnetic proximity effect in which a ferromagnetic moment in the C medium is induced by Co/C interfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Strong Room-temperature Negative Transconductance In An Axial Si/Ge Hetero-nanowire Tunneling Field-effect Transistor

We report on room-temperature negative transconductance (NTC) in axial Si/Ge hetero-nanowire tunneling field-effect transistors (TFETs). The NTC produces a current peak-to-valley ratio > 45, a high value for a Si-based device. We characterize the NTC characteristics over a range of gate VG and drain VD voltages, finding that NTC persists down to VD = –50 mV. The physical mechanism responsible for the NTC is the VG-induced depletion in the p-Ge section that eventually reduces the maximum electric field that triggers the tunneling ID, as confirmed via three-dimensional TCAD simulations.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2014

Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn{sub 4}N epitaxial thin film

We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗