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DOE OSTI2023

Disordered hyperuniform solid state materials

Disordered hyperuniform (DHU) states are recently discovered exotic states of condensed matter. DHU systems are similar to liquids or glasses in that they are statistically isotropic and lack conventional long-range translational and orientational order. On the other hand, they completely suppress normalized infinite-wavelength density fluctuations like crystals and, in this sense, possess a hidden long-range correlation. Very recently, there have been several exciting discoveries of disordered hyperuniformity in solid-state materials, including amorphous carbon nanotubes, amorphous 2D silica, amorphous graphene, defected transition metal dichalcogenides, defected pentagonal 2D materials, and medium/high-entropy alloys. It has been found that the DHU states of these materials often possess a significantly lower energy than other disorder models and can lead to unique electronic and thermal transport properties, which results from mechanisms distinct from those identified for their crystalline counterparts. For example, DHU states can enhance electronic transport in 2D amorphous silica; DHU medium/high-entropy alloys realize the Vegard's law and possess enhanced electronic bandgaps and thermal transport at low temperatures. These unique properties open up many promising potential device applications in optoelectronics and thermoelectrics. Here, we provide a focused review on these important new developments of hyperuniformity in solid-state materials, taking an applied and “materials” perspective, which complements the existing reviews on hyperuniformity in physical systems and photonic materials. As a result, future directions and outlook are also provided, with a focus on the design and discovery of DHU quantum materials for quantum information science and engineering.

2D materials↗

DOE OSTI2023

Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Abstract Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument the future Timing Detectors of ATLAS and CMS for the High-Luminosity LHC. While initially conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low-energy X-rays with good energy resolution and excellent time resolution (tens of picoseconds). Using the Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several LGADs designs were characterized with energies from 5 to 70 keV. The SSRL provides 10 ps pulsed X-ray bunches separated by 2 ns intervals with an energy dispersion (ΔE/E) of 10 -4 . LGADs from Hamamatsu Photonics (HPK) and Brookhaven National Laboratory (BNL) with different thicknesses ranging from 20 μm to 50 μm and different gain layer designs were read out using fast amplification boards and digitized with a high bandwidth and high sampling rate oscilloscope. PIN devices from HPK and AC-LGADs from BNL were characterized as well. A systematic and detailed characterization of the devices' energy linearity, resolution, and time resolution as a function of X-ray energy was performed for different biasing voltages at room temperature and are reported in this work. The charge collection and multiplication mechanism were simulated using Geant4 and TCAD Sentaurus, providing an important handle for interpreting the data.

Instruments & Instrumentation↗

NASA NTRS1998

Event Pileup in AXAF's ACIS CCD Camera

AXAF's high resolution mirrors will focus a point source near the optical axis to a spot that is contained within a radius of about two pixels on the ACIS Charge Coupled Devices (CCD) camera. Because of the small spot size, the accuracy to which fluxes and spectral energy distributions of bright point sources can be measured will be degrad3ed by event pileup. Event pileup occurs when two or more X-ray photons arrive simultaneously in a single detection cell on a CCD readout frame. When pileup occurs, ACIS's event detection algorithm registers the photons as a single X-ray event. The pulse height channel of the event will correspond to an energy E approximately E-1 + E-2...E-n, where n is the number of photons registered per detection cell per readout frame. As a result, pileup artificially hardens the observed spectral energy distribution. I will discuss the effort at the AXAF Science Center Lo calibrate pileup in ACIS using focused, nearly monochromatic X-ray source. I will discuss techniques for modeling and correcting pileup effects in polychromatic spectra.

McNamara, Brian R.↗

NASA NTRS2013

Methods of Fabricating Scintillators with Radioisotopes for Beta Battery Applications

Technology has been developed for a class of self-contained, long-duration power sources called beta batteries, which harvest the energy contained in the radioactive emissions from beta decay isotopes. The new battery is a significant improvement over the conventional phosphor/solar cell concept for converting this energy in three ways. First, the thin phosphor is replaced with a thick scintillator that is transparent to its own emissions. By using a scintillator sufficiently thick to completely stop all the beta particles, efficiency is greatly improved. Second, since the energy of the beta particles is absorbed in the scintillator, the semiconductor photodetector is shielded from radiation damage that presently limits the performance and lifetime of traditional phosphor converters. Finally, instead of a thin film of beta-emitting material, the isotopes are incorporated into the entire volume of the thick scintillator crystal allowing more activity to be included in the converter without self-absorption. There is no chemical difference between radioactive and stable strontium beta emitters such as Sr-90, so the beta emitter can be uniformly distributed throughout a strontium based scintillator crystal. When beta emitter material is applied as a foil or thin film to the surface of a solar cell or even to the surface of a scintillator, much of the radiation escapes due to the geometry, and some is absorbed within the layer itself, leading to inefficient harvesting of the energy. In contrast, if the emitting atoms are incorporated within the scintillator, the geometry allows for the capture and efficient conversion of the energy of particles emitted in any direction. Any gamma rays associated with secondary decays or Bremsstrahlung photons may also be absorbed within the scintillator, and converted to lower energy photons, which will in turn be captured by the photocell or photodiode. Some energy will be lost in this two-stage conversion process (high-energy particle to low-energy photons to electric current). The geometric advantage partially offsets this as well, since the absorption depth of high-energy beta radiation is much larger than the depth of a p-n junction. Thus, in a p-n junction device, much of the radiation is absorbed far away from the junction, and the electron- hole pairs are not all effectively collected. In contrast, with a transparent scintillator the radiation can be converted to light in a larger volume, and all of the light can be collected in the active region of the photodiode. Finally, the new device is more practical because it can be used at much higher power levels without unduly shortening its lifetime. While the crystal structure of scintillators is also subject to radiation damage, their performance is far more tolerant of defects than that of semiconductor junctions. This allows the scintillator- based approach to use both higher energy isotopes and larger quantities of the isotopes. It is projected that this technology has the potential to produce a radioisotope battery with up to twice the efficiency of presently used systems.

Rensing, Noa M.↗

DOE OSTI2022

Nonradiative Recombination via Charge-Transfer-Exciton to Polaron Energy Transfer Limits Photocurrent in Organic Solar Cells

Here, a recombination and exciton loss mechanism is reported in organic solar cells involving energy transfer between charge transfer (CT) excitons and polarons, impacting photocurrent generation, particularly in the near-infrared where polaronic transitions typically reside. This process sets a low-energy cut-off in the external quantum efficiency spectrum of an excitonic donor/acceptor interface, determined by the low-energy polaron absorption peak and the CT state reorganization energy. Furthermore, this process explains the deviation from unity and bias dependence of the CT state's internal quantum efficiency at low photon energies. This process is demonstrated in a variety of systems and it is hypothesized that CT state to polaron energy transfer recombination may be responsible for a share of nonradiative recombination in all organic photovoltaics and can explain numerous experimentally observed device trends regarding photocurrent generation and energy losses. Overall, this work enhances the understanding of photophysical processes in organic materials and allows the design of systems that can avoid this recombination pathway.

14 SOLAR ENERGY↗

DOE OSTI2021

Brightening of Dark States in CsPbBr 3 Quantum Dots Caused by Light–Induced Magnetism

Lead halide perovskite quantum dots (QDs) have shown great potential for optoelectronic and quantum photonic applications. Although controversy remains about the electronic fine structures of bulk perovskites due to the strong spin-orbit coupling affecting the conduction bands, compelling evidence indicates that the ground states of perovskite QDs remain dark, limiting their applications in optoelectronic devices. In this study, it is demonstrated that photoexcitation can induce large intrinsic magnetic fields in Mn-doped CsPbBr 3 perovskite QDs. Equivalent to applying an external magnetic field, the light-induced field causes giant Zeeman splitting to the bright triplet states and brightens the dark singlet ground state, thus effectively rendering a partially bright ground state in the doped QDs. These findings here may contribute to the understanding of the electronic fine structures in perovskite QDs and demonstrate a potential approach for creating semiconductor nanostructures that can serve as bright light sources.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

A review of radiation-induced damage to quantum dots

Quantum dots (QDs) are versatile nano structures that have applications in many fields of research and production, including biosensor technology, computing, photovoltaics, and optoelectronics. QDs have gained interest in the field of radiation detection because of their relative ease of production, tunable photoluminescence, and sensitivity to ionizing radiation. The photoluminescent properties of QDs diminish proportionally to prolonged ionizing radiation interactions, leading many groups to seek out these materials as potential candidates for the next generation of inexpensive, easily manufactured dosimetry and sensors. To use QDs in these applications, the mechanisms of radiation damage to the nanomaterial must be clearly understood and characterized. Herein, we review the study of ionizing radiation damage to QDs. First, the synthesis and properties of QDs are briefly discussed. Next, the radiation damage to QDs due to heavy charged particles, fast electrons, high energy photons, and neutrons are detailed. After this, experimental methods and modelling of QDs in radiation environments are examined. Lastly, future research directions are provided. The goal of this review is to aid in understanding the ionizing radiation effects on QD-based devices.

Snow, Jesse [University of Utah, Salt Lake City, U↗

DOE OSTI2020

Timing resolution and rate capability of Photonis miniPlanacon XPM85212/A1-S MCP-PMT

In this paper we report on a set of experiments that focus on measuring the timing performance of the Photonis miniPlanacon XPM85212/A1-S microchannel plate photomultiplier tubes along with the detector response at high event rates. The detector has a single photoelectron timing resolution of 30 ps at low rates ( 10 kHz ). We show that both the gain and the timing start to deteriorate around 1 MHz with 20 photoelectrons per channel at 1 0 4 target gain, giving the current per unit of area limits of 1.38 μ A / cm 2 and 2.38 μ A / cm 2 for the two tested devices. Photo-multiplier tubes with lower micro-channel plate resistivity exhibit a better rate capability due to the faster replenishment of the charge inside the microchannels. As we demonstrate, another method to improve the rate capability is to operate the photon detector tubes at a lower gain by reducing the supply voltage and compensating for the loss of amplitude by an additional amplification stage at the expense of the achieved timing resolution. The tube active area over which the beam is spread also plays a role since the same amount of light yields a better rate capability when spread over a larger area. The tubes exposed to high event rates showed an uncharacteristically slow recovery back to its initial gain with 80 % of the initial gain recovered only after several tens of minutes.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2024

Time-resolved synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument future timing detectors at the High Luminosity Large Hadron Collider (HL-LHC) experiments. While conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low energy X-rays with good energy resolution and excellent timing (tens of picoseconds). Here, using the Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several LGADs designs were characterized with energies from 5 to 35 keV. The SSRL provides 10 ps pulsed X-ray bunches separated by 2.1 ns intervals, and with an energy dispersion (ΔE/E) of 1 X 10 -4 . LGADs fabricated by Hamamatsu Photonics (HPK) and Brookhaven National Laboratory (BNL) with different thicknesses ranging from 20 µm to 50 µm and different gain layer designs were read out a two stage fast amplification circuit and digitized with a high bandwidth, high sampling rate oscilloscope. PIN devices from HPK were characterized as well. A systematic and detailed characterization of the devices’ energy linearity, resolution and timing resolution as a function of X-ray energy was performed for different biasing voltages at room temperature

Charge multiplication↗

DOE OSTI2025

Data-driven picosecond X-ray imaging for quantitative plasma-induced shock characterization

Imaging dynamic events, especially shockwave behavior, is key to advancing high-energy-density (HED) research. Recent advances in fourth- and fifth-generation X-ray light sources allow for high-resolution imaging of fast phenomena, but limited beam time necessitates maximizing data acquisition. We present a benchtop-scale pulsed plasma device submerged in liquid heptane, capable of generating dynamic events at rates exceeding 10 Hz, supporting the field’s data-driven goals by producing large, high-quality imaging datasets. Using X-ray phase contrast imaging (XPCI) at the Advanced Photon Source, we imaged weak shockwaves (Mach ~ 1.2) in heptane interacting with plasma-induced cavitation bubbles, causing deviation from Rankine-Hugoniot behavior; to our knowledge, this represents the first direct imaging of such interaction. Our quantitative analysis offers insight into weak shock phenomena and energy-focusing applications in pulsed plasmas. These results highlight the potential for large datasets to advance dynamic HED research at current light source facilities, and have implications for fields such as inertial confinement fusion, plasma-enhanced chemical processing, and biomedical applications.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Enhancement of microwave to optical spin-based quantum transduction via a magnon mode

We propose a method for converting single microwave photons to single optical sideband photons based on spinful impurities in magnetic materials. This hybrid system is advantageous over previous proposals because (i) the implementation allows much higher transduction rates (10 3 times faster at the same optical pump Rabi frequency) than state-of-the-art devices, (ii) high-efficiency transduction is found to happen in a significantly larger space of device parameters (in particular, over 1 GHz microwave detuning), and (iii) it does not require mode volume matching between optical and microwave resonators. We identify the needed magnetic interactions as well as potential materials systems to enable this speed up using erbium dopants for telecom compatibility. This is an important step towards realizing high-fidelity entangling operations between remote qubits and will provide additional control of the transduction through perturbation of the magnet.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1978

Nuclear electric power sources

Measurements on radioactive commercial p-n junction silicon cells show that these units are capable of delivering several hundred microwatts per curie of Am-241 alpha source, indicating their usefulness in such electronic devices as hearing aids, heart pacemakers, electronic watches, delay timers and nuclear dosimeter chargers. It is concluded that the Am-241 sources are superior to the beta sources used previously, because of higher alpha specific ionization and simultaneous production of low energy photons which are easily converted into photoelectrons for additional power.

Singh, J. J.↗

NASA NTRS1988

Solid-State Single-Photon Counter

Avalanche photodiode used to detect single photons if cooled to optimum temperature and overbiased beyond breakdown voltage. Offers two to three times sensitvity of photomultiplier tubes commonly used for photon detection. When cooled to reduce number of thermal carriers, avalanche photodiode reverse-biased beyond normal breakdown voltage to give it extremely-high internal gain of 10 to seventh power to 10 to eigth power. Advantages of solid-state devices to applications requiring low-level light detection, optical communication, astronomy, remote sensing, optical metrology, and optical signal processing.

Robinson, D. L.↗

DOE OSTI2021

32 Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon

We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at − <#comment/> 1 V , 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.14. A polarization dependence on gain and bandwidth has been observed and investigated. This shows the potential to integrate a high-speed receiver in a wavelength division multiplexing (WDM) system on a QD-based silicon photonics platform.

Tossoun, Bassem↗

NASA NTRS1991

Resonance transition radiation X-ray laser

A free electron laser is proposed using a periodic dielectric and helical magnetic field. Periodic synchronism between the electrons and the optical wave is obtained at the period of the dielectric and not at the period of the helical magnetic field. The synchronism condition and the gain of the new device are derived. The effects on the gain from dephasing and beam expansion due to elastic scattering of the electrons in the periodic medium are included in the gain calculation. Examples of the resonance transition radiation laser and klystron are given. Operation at photon energies between 2.5 and 3.5 keV with net gain up to 12 percent is feasible using high electron-beam energies of 3 and 5 GeV. Moderate (300-MeV) beam energy allows operation between 80 to 110 eV with up to 57 percent net gain using a klystron design. In both cases, rapid foil heating may limit operation to a single electron-beam pulse.

Reid, Max B.↗

NASA NTRS1999

Proton Effects and Test Issues for Satellite Designers: Displacement Effects - Section 4

Marshall, Cheryl J.↗

NASA NTRS1999

Proton Effects and Test Issues for Satellite Designers

Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves. Ion-solid interactions and the nature of the displacement damage they generate have been studied extensively for over half a century, yet they still remain a subject of investigation. In this section, a description of the mechanisms by which displacement damage is produced will be followed by a summary of the major consequences for device performance in a space environment. Often the degradation of a device parameter can be characterized by a damage factor (measured in a laboratory using monoenergetic protons) that is simply the change in a particular electrical or optical parameter per unit proton fluence. In addition, we will describe the concept of a non-ionizing energy loss rate (NIEL) which quantifies that portion of the energy lost by an incident ion that goes into displacements. It has been calculated as a function of proton energy, and is analogous to (and has the same units as) the linear energy transfer (LET) for ionizing energy. We will discover that, to first order, the calculated NIEL describes the energy dependence of the measured device damage factors. This observation provides the basis for predicting proton induced device degradation in a space environment based on both the calculated NIEL and relatively few laboratory test measurements. The methodology of such on-orbit device performance predictions will be described, as well as the limitations. Several classes of devices for which displacement damage is a significant (if not the dominant) mode of radiation induced degradation will be presented.

Marshall, Cheryl J.↗

NASA NTRS2004

New Material for Surface-Enhanced Raman Spectroscopy

A chemical method of synthesis and application of coating materials that are especially suitable for surface-enhanced Raman spectroscopy (SERS) has been developed. The purpose of this development is to facilitate the utilization of the inherently high sensitivity of SERS to detect chemicals of interest (analytes) in trace amounts, without need for lengthy sample preparation. Up to now, the use of SERS has not become routine because the methods available have not been able to reproduce sampling conditions and provide quantitative measurements. In contrast, the coating materials of the present method enable analysis with minimum preparation of samples, and SERS measurements made using these materials are reproducible and reversible. Moreover, unlike in methods investigated in prior efforts to implement SERS, sampling is not restricted to such specific environments as electrolytes or specific solvents. The coating materials of this method are porous glasses, formed in sol-gel processes, that contain small particles of gold or silver metal. Materials of this type can be applied to the sample-contact surfaces of a variety of sampling and sensing devices, including glass slides, glass vials, fiber-optic probes, and glass tubes. Glass vials with their insides coated according to this method are particularly convenient for SERS to detect trace chemicals in solutions: One simply puts a sample solution containing the analyte(s) into a vial, then puts the vial into a Raman spectrometer for analysis. The chemical ingredients and the physical conditions of the sol-gel process have been selected so that the porous glass formed incorporates particles of the desired metal with size(s) to match the wavelength(s) of the SERS excitation laser in order to optimize the generation of surface plasmons. The ingredients and processing conditions have further been chosen to tailor the porosity and polarity of the glass to optimize the sample flow and the interaction between the analyte(s) and the plasmon field that generates Raman photons. The porous silica network of a sol-gel glass creates a unique environment for stabilizing SERS-active metal particles. Relative to other material structures that could be considered for SERS, the porous silica network offers higher specific surface area and thus greater interaction between analyte molecules and metal particles. Efforts to perform SERS measurements with the help of sampling devices coated by this method have been successful. In tests, numerous organic and inorganic chemicals were analyzed in several solvents, including water. The results of the tests indicate that the SERS measurements were reproducible within 10 percent and linear over five orders of magnitude. One measure of the limits of detectability of chemicals in these tests was found to be a concentration of 300 parts per billion. Further development may eventually make it possible to realize the full potential sensitivity of SERS for detecting some analytes in quantities as small as a single molecule.

Farquharson, Stuart↗