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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,027 records · Page 57
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Confocal filtering in cathodoluminescence microscopy of nanostructures

Cathodoluminescence (CL) microscopy allows optical characterization of nanostructures at high spatial resolution. At the nanoscale, a main challenge of the technique is related to the background CL generated within the sample substrate. Here, we implement confocal detection of the CL signal to minimize the background contribution to the measurement. Nano-phosphors were used as point sources to evaluate the filtering capabilities of our confocal CL system, obtaining an axial intensity profile with 2.7 μm full width at half maximum for the central peak, in good correspondence with theoretical expectations. Considering the electron interaction volume, we found that the confocal filter becomes effective for electron energies above 20 keV, when using a 25 μm pinhole (0.86 Airy units). To illustrate our approach, we present confocal CL imaging of gold nanowires and triangular shaped plates deposited on an indium-tin oxide covered glass substrate, comparing the images with those obtained in standard unfiltered CL detection. The results show that confocal CL microscopy is a valuable tool for the investigation of nanostructures on highly cathodoluminescent substrates, widely used in biological and optical applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (μSIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of μSIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in μSIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Multi-dimensional coherent optical spectroscopy of semiconductor nanostructures: Collinear and non-collinear approaches

We review our recent work on multi-dimensional coherent optical spectroscopy (MDCS) of semiconductor nanostructures. Two approaches, appropriate for the study of semiconductor materials, are presented and compared. A first method is based on a non-collinear geometry, where the Four-Wave-Mixing (FWM) signal is detected in the form of a radiated optical field. This approach works for samples with translational symmetry, such as Quantum Wells (QWs) or large and dense ensembles of Quantum Dots (QDs). A second method detects the FWM in the form of a photocurrent in a collinear geometry. This second approach extends the horizon of MDCS to sub-diffraction nanostructures, such as single QDs, nanowires, or nanotubes, and small ensembles thereof. Examples of experimental results obtained on semiconductor QW structures are given for each method. In particular, it is shown how MDCS can assess coupling between excitons confined in separated QWs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Current-driven vortex domain wall motion in wire-tube nanostructures

We have investigated the current-driven domain wall motion in nanostructures comprised of a pair of nanotube and nanowire segments. Under certain values of external magnetic fields, it is possible to pin a vortex domain wall in the transition zone between the wire and tube segments. We explored the behavior of this domain wall under the action of an electron flow applied in the opposite direction to the magnetic field. Thus, for a fixed magnetic field, it is possible to release a domain wall pinned simply by increasing the intensity of the current density, or conversely, for a fixed current density, it is possible to release the domain wall simply decreasing the magnetic external field. When the domain wall remains pinned due to the competition between the current density and the magnetic external field, it exhibits a oscillation frequency close to 8 GHz. The amplitude of the oscillations increases with the current density and decreases over time. On the other hand, when the domain wall is released and propagated through the tube segment, this shows the standard separation between a steady and a precessional regime. The ability to pin and release a domain wall by varying the geometric parameters, the current density, or the magnetic field transforms these wire-tube nanostructures in an interesting alternative as an on/off switch nano-transistor.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Femtosecond upconverted photocurrent spectroscopy of InAs quantum nanostructures

The carrier upconversion dynamics in InAs quantum nanostructures are studied for intermediate-band solar-cell applications via ultrafast photoluminescence and photocurrent (PC) spectroscopy based on femtosecond excitation correlation (FEC) techniques. Strong upconverted PC-FEC signals are observed under resonant excitation of quantum well islands (QWIs), which are a few monolayer-thick InAs quantum nanostructures. The PC-FEC signal typically decays within a few hundred picoseconds at room temperature, which corresponds to the carrier lifetime in QWIs. The photoexcited electron and hole lifetimes in InAs QWIs are evaluated as functions of temperature and laser fluence. Our results provide solid evidence for electron–hole–hole Auger process, dominating the carrier upconversion in InAs QWIs at room temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Defect engineered d{sup 0} ferromagnetism in tin-doped indium oxide nanostructures and nanocrystalline thin-films

Origin of unexpected defect engineered room-temperature ferromagnetism observed in tin-doped indium oxide (ITO) nanostructures (Nanowires, Nano-combs) and nanocrystalline thin films fabricated by pulsed laser deposition has been investigated. It is found that the ITO nanostructures prepared under argon environment exhibit strongest ferromagnetic signature as compared to that nanocrystalline thin films grown at oxygen. The evidence of singly ionized oxygen vacancy (V{sub 0}{sup +}) defects, obtained from various spectroscopic measurements, suggests that such V{sub 0}{sup +} defects are mainly responsible for the intrinsic ferromagnetic ordering. The exchange interaction of the defects provides extensive opportunity to tune the room-temperature d{sup 0} ferromagnetism and optical properties of ITOs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Synthesis of Cu doped ZnS nanostructures on flexible substrate using low cost chemical method

Flexible electronics is one of the emerging area of this era. In this paper we have reported synthesis of Cu doped Zinc sulphide nanostructures on filter paper flexible substrates. Zinc chloride and Thio urea were used as a precursor for Zinc and Sulphur. The structures were characterized by XRD, FE-SEM and UV visible spectrometer. All the peaks identified for cubic structure of ZnS. Appearance of small Cu peaks indicates incorporation of Cu into ZnS lattice. Zns nanostructures assembled as nanobelts and nanofibers as shown in FE-SEM micrographs. Compound Structures provide the reasonable electrical conductivity on filter paper. Absorption in UV region makes them suitable for flexible electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Study of morphology effects on magnetic interactions and band gap variations for 3d late transition metal bi-doped ZnO nanostructures by hybrid DFT calculations

Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nanostructures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band gaps have been studied in the case of the bi-doped (ZnO){sub 24} nanostructures with the impurity dopant atoms of the 3d late transition metals—Mn, Fe, Co, Ni, and Cu. To explore the morphology effect, three different structures of the host (ZnO){sub 24} nano-system, having different degrees of spatial confinement, have been considered: a two dimensional nanosheet, a one dimensional nanotube, and a finite cage-shaped nanocluster. The present study employs hybrid density functional theory to accurately describe the electronic structure of all the systems. It is shown here that the magnetic coupling between the two dopant atoms remains mostly anti-ferromagnetic in the course of changing the morphology from the sheet geometry to the cage-shaped geometry of the host systems, except for the case of energetically most stable bi-Mn doping, which shows a transition from ferromagnetic to anti-ferromagnetic coupling with decreasing aspect ratio of the host system. The effect of the shape change, however, has a significant effect on the overall band gap variations of both the pristine as well as all the bi-doped systems, irrespective of the nature of the dopant atoms and provides a means for easy tunability of their optoelectronic properties.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Structural origination of charge transfer complex nanostructures: Excellent candidate for field emission

Worldwide strategies for amalgamating rationally controlled one-dimensional organic nanowires are of fundamental importance for their applications in flexible, cheaper and lighter electronics. In this work we have fabricated large-area, ordered CuTCNQ (copper-7,7,8,8-tetracyanoquinodimethane) nano architecture arrays over flexible conducting substrate and discussed the rational growth and integration of nanostructures. Here we adopted the organic solid phase reaction (VLS) technique for the growth of organic hierarchies and investigated how field emission properties changes by tuning the nanostructures morphology i.e., by varying length, diameter, alignment and orientation over flexible substrate. The CuTCNQ nanowires with optimized geometry exhibit excellent high field emission performance with low turn-on and threshold field values. The result strongly indicate that CuTCNQ nanowires on flexible carbon cloth substrate are promising candidates for constructing cold cathode based emission display devices, vacuum nanoelectronics, and etc.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Néel vector reorientation in ferromagnetic/antiferromagnetic complex oxide nanostructures

In this study, we report on a temperature-driven antiferromagnetic (AF) spin reorientation transition in micro- and nanostructures of AF/ferromagnetic (FM) LaFeO 3 /La 0.7 Sr 0.3 MnO 3 thin film bilayers. Using a combination of x-ray photoemission electron microscopy and x-ray absorption spectroscopy, the Néel vector is shown to reorient 90° as a result of the competition between a shape-imposed anisotropy in the AF layer and interface coupling to the adjacent FM layer. We demonstrate how a temperature dependence of the AF/FM spin configuration in line-shaped nanomagnets can be tuned by variation of their linewidth. This work provides insight into the AF/FM interface exchange coupling in complex oxide heterostructures and the possibilities of spin control by nanostructuring in thin film spintronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Shape-imposed anisotropy in antiferromagnetic complex oxide nanostructures

In this study, we report on a shape-imposed magnetic anisotropy in micro- and nanostructures defined in antiferromagnetic (AF) LaFeO3 (LFO) thin films. Two distinct types of structures are investigated: embedded magnets created via ion implantation and free-standing magnets created via ion milling. Using a combination of x-ray photoemission electron microscopy and x-ray absorption spectroscopy, we examine the impact of the structure type, AF layer thickness, and crystal geometry on the Néel vector orientation in these structures. Here, we demonstrate a distinct shape-imposed anisotropy in embedded and free-standing structures alike and show that both parallel and perpendicular alignments of the AF spin axis with respect to structure edges can be achieved by variation of the AF layer thickness and the orientation of the structure edges with respect to the LFO crystalline axes. This work demonstrates how the fabrication procedure affects the magnetic order in thin film AF nanostructures and shows how nanoscale patterning can be used to control the orientation of the Néel vector in epitaxial oxide thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Use of Au@Void@TiO 2 yolk-shell nanostructures to probe the influence of oxide crystallinity on catalytic activity for low-temperature oxidations

A series of Au@Void@TiO 2 yolk-shell structures were synthesized and characterized, and their catalytic activity was tested for the oxidation of carbon monoxide. The target of this study was to evaluate the effects of (1) the crystallinity of the TiO 2 shell and (2) the presence of titanate phases. Transmission electron microscopy and X-ray diffraction data show that increasing calcination temperatures, from 850 to 1250 K, leads to the formation of larger titania crystallites. These crystallites are typically in the form of anatase, but some rutile is also made at high temperatures. The general yolk-shell nanostructures retain their basic characteristics upon calcination and upon treatment with HCl (used to remove the titanate phases), but a few structural and chemical changes do take place: (1) the void-space diameter is reduced by approximately 10% when going from T Calc = 850 K to T Calc = 1250 K, a change that is accompanied by a decrease in the surface area (estimated from N 2 adsorption-desorption isotherms); (2) the shell thickness remains unaffected by either calcination or HCl treatment; (3) the pore volume also remains approximately constant with increasing calcination temperature in the catalysts free of titanates but diminishes significantly in the samples with titanate phases; (4) the mesoporosity is minimal in all yolk-shell nanostructures but more noticeable with the pure TiO 2 shells; (5) the titanates have high Na content (measured by X-ray photoelectron spectroscopy), but that Na is fully removed upon treatment with HCl; (6) no Ti 3+ was detectable in any of the samples, but silica, together with C and (minor amounts of) N, was present in all; (7) all Au is in metallic form; (8) two temperature regimes were observed for the catalytic oxidation of CO, as reported for other similar samples in the past, an Arrhenius regime around or above room temperature, and a cryogenic range going to temperatures as low as 120 K; (9) the latter regime is only seen with the samples containing titanate phases; (10) the titanates seem to also aid in the oxidation at higher temperatures; and (11) in general, increasing titania crystallinity leads to a decrease the catalytic activity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Growth of nanostructured molybdenum disulfide (MoS 2 ) thin films on a nanohole-patterned substrate using plasma-enhanced atomic layer deposition (ALD)

Nanostructured molybdenum disulfide (MoS 2 ) thin films were grown on a nanohole-patterned silicon substrate using plasma-enhanced atomic layer deposition. A nanoscale hole-patterned silicon substrate was fabricated for the growth of MoS 2 film using the self-assembly-based nanofabrication method. The nanoscale holes can significantly increase the surface area of the substrate while the formation and growth of nanostructures normally start at the surface of the substrate. Hydrogen sulfide (H 2 S) gas was used as the S source in the growth of molybdenum disulfide (MoS 2 ) while molybdenum (V) chloride (MoCl 5 ) powder was used as the Mo source. The MoS 2 film had a stoichiometric ratio of 1 (Mo) to 2 (S), and had peaks of E 1 2g and A 1g , which represent the in-plane and out-plane vibration modes of the Mo–S bond, respectively. It was found that the MoS 2 film grown in the nanoscale hole, especially at the wall of the hole, has more hexagonal-like structures due to the effects of nanoscale space confinement and the nanoscale interface although the film shows an amorphous structure. Post-growth high-temperature annealing ranging from 800 to 900 °C produced local crystalline structures in the film, which are compatible with those reported by other researchers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Structural and optical characterization of dilute Bi-doped GaN nanostructures grown by molecular beam epitaxy

We have carried out detailed studies on the epitaxy and characterization of dilute Bi-doped GaN nanostructures. A comprehensive investigation of Bi-doped GaN nanowires and quasi-film epitaxial growth conditions has been performed. Scanning electron microscopy studies show that lowering the GaBiN growth temperature causes gradual changes in top c-plane nanowire morphology due to the incremental incorporation of foreign Bi atoms. This trend is further substantiated by the secondary ion mass spectroscopy analysis of a multi-layer Bi-doped GaN quasi-film. However, it is also found that the amount of Bi incorporation into the GaN lattice is relatively independent of the N2 flow rate variation under the growth conditions investigated. Furthermore, room-temperature micro-Raman spectra show that there are additional peaks near 530, 650, and 729 cm−1 wave numbers in the Bi-doped GaN samples, which can primarily be attributed to Bi local vibrational modes, indicative of a small amount of Bi incorporation in the GaN lattice. Moreover, phonon calculations with density functional theory indicate that Bi replacing the N sites is the likely origin of the experimentally measured Raman modes. X-ray photoelectron spectroscopy measurements have also been obtained to deduce the electronic interaction between the Bi dopant atom and the GaN nanostructure. Such one-dimensional nanowires permit the synthesis of dislocation-free highly mismatched alloys due to strain relaxation, allowing efficient light absorption and charge carrier extraction that is relevant for solar energy harvesting and artificial photosynthesis.

Materials Science↗
DOE OSTI2024

Versatile stochastic model for predictive KMC simulation of fcc metal nanostructure evolution with realistic kinetics

Stochastic lattice-gas models provide the natural framework for analysis of the surface diffusion-mediated evolution of crystalline metal nanostructures on the appropriate time scale (often 10 1 –10 4 s) and length scale. Model behavior can be precisely assessed by kinetic Monte Carlo simulation, typically incorporating a rejection-free algorithm to efficiently handle the broad range of Arrhenius rates for hopping of surface atoms. The model should realistically prescribe these rates, or the associated barriers, for a diversity of local surface environments. However, commonly used generic choices for barriers fail, even qualitatively, to simultaneously describe diffusion for different low-index facets, for terrace vs step edge diffusion, etc. We introduce an alternative Unconventional Interaction–Conventional Interaction formalism to prescribe these barriers, which, even with few parameters, can realistically capture most aspects of behavior. Here, the model is illustrated for single-component fcc metal systems, mainly for the case of Ag. It is quite versatile and can be applied to describe both the post-deposition evolution of 2D nanostructures in homoepitaxial thin films (e.g., reshaping and coalescence of 2D islands) and the post-synthesis evolution of 3D nanocrystals (e.g., reshaping of nanocrystals synthesized with various faceted non-equilibrium shapes back to 3D equilibrium Wulff shapes).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Temperature effects of ion irradiation on the nanostructural features in ductile-phase-toughened tungsten composites

Ductile-phase toughened tungsten (DPT W) composites have emerged as promising candidates for load-bearing components behind the plasma-facing tungsten armor in fusion reactors due to their enhanced thermomechanical properties. This study focuses on a composite consisting of W particles embedded in a ductile NiFeW solution matrix, hot-rolled to a thickness reduction of 87% (87R DPT W). Sequential irradiations with Ni2+ and He+ ions were performed to identical doses and helium concentrations at room temperature (RT) and 1273 K. Irradiation at RT produced no discernible nanostructural features due to the immobility of mono-vacancies, whereas cavity formation was observed at 973 K. At 1273 K, the W phase exhibited larger cavities, reduced cavity number density, and lower volumetric swelling compared to 973 K. Notably, nanosized NiFeW precipitates formed within the W phase at 1273 K, a phenomenon absent at 973 K. A new phase of cubic (NiFe)6W6C was also observed at the interphase boundary. In contrast, the NiFeW matrix showed no nanostructural changes at 1273 K, likely due to cavity dissociation. Separate irradiations at 1273 K indicated that Ni2+ ions induced precipitate formation in the W phase, while He+ ions exclusively caused cavity formation. The microstructure of 87R DPT W irradiated at RT and subsequently annealed at 1273 K closely resembled that of material irradiated directly at 1273 K. Like oxide-dispersion-strengthened steels, the observed nanoparticle-embedded W can inhibit dislocation propagation, potentially delaying the ductile-to-brittle transition temperature. These findings highlight the potential of NiFeW nanoparticle-reinforced W composites as irradiation-resistant materials for fusion reactors.

Jiang, Weilin (ORCID:0000000183028313)↗
DOE OSTI2021

MnSn 2 and MnSn 2 –TiO 2 nanostructured anode materials for lithium-ion batteries

The high theoretical lithium storage capacity of Sn makes it an enticing anode material for Li-ion batteries (LIBs); however, its large volumetric expansion during Li–Sn alloying must be addressed. Combining Sn with metals that are electrochemically inactive to lithium leads to intermetallics that can alleviate volumetric expansion issues and still enable high capacity. Here, we present the cycling behavior of a nanostructured MnSn 2 intermetallic used in LIBs. Nanostructured MnSn 2 is synthesized by reducing Sn and Mn salts using a hot injection method. The resulting MnSn 2 is characterized by x-ray diffraction and transmission electron microscopy and then is investigated as an anode for LIBs. The MnSn 2 electrode delivers a stable capacity of 514 mAh g -1 after 100 cycles at a C/10 current rate with a Coulombic efficiency >99%. Unlike other Sn-intermetallic anodes, an activation overpotential peak near 0.9 V versus Li is present from the second lithiation and in subsequent cycles. We hypothesize that this effect is likely due to electrolyte reactions with segregated Mn from MnSn 2 . To prevent these undesirable Mn reactions with the electrolyte, a 5 nm TiO 2 protection layer is applied onto the MnSn 2 electrode surface via atomic layer deposition. The TiO 2 -coated MnSn 2 electrodes do not exhibit the activation overpotential peak. The protection layer also increases the capacity to 612 mAh g -1 after 100 cycles at a C/10 current rate with a Coulombic efficiency >99%. This higher capacity is achieved by suppressing the parasitic reaction of Mn with the electrolyte, as is supported by x-ray photoelectron spectroscopy analysis.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Ab initio calculations of exciton radiative lifetimes in bulk crystals, nanostructures, and molecules

Excitons are bound electron-hole pairs that dominate the optical response of semiconductors and insulators, especially in materials where the Coulomb interaction is weakly screened. Light absorption (including excitonic effects) has been studied extensively using first-principles calculations, but methods for computing radiative recombination and light emission are still being developed. In this work we show a unified ab initio approach to compute exciton radiative recombination in materials ranging from bulk crystals to nanostructures and molecules. We derive the rate of exciton radiative recombination in bulk crystals, isolated systems, and in one- and two-dimensional materials, using Fermi’s golden rule within the Bethe-Salpeter equation approach. We present benchmark calculations of radiative lifetimes in a GaAs crystal and in gas-phase organic molecules. Our work provides a general method for studying exciton recombination and light emission in bulk, nanostructured, and molecular materials from first principles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗