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At least 1,027 records · Page 57
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Asymptotic Behavior of Memristive Circuits

The interest in memristors has risen due to their possible application both as memory units and as computational devices in combination with CMOS. This is in part due to their nonlinear dynamics, and a strong dependence on the circuit topology. We provide evidence that also purely memristive circuits can be employed for computational purposes. In the present paper we show that a polynomial Lyapunov function in the memory parameters exists for the case of DC controlled memristors. Such a Lyapunov function can be asymptotically approximated with binary variables, and mapped to quadratic combinatorial optimization problems. This also shows a direct parallel between memristive circuits and the Hopfield-Little model. In the case of Erdos-Renyi random circuits, we show numerically that the distribution of the matrix elements of the projectors can be roughly approximated with a Gaussian distribution, and that it scales with the inverse square root of the number of elements. This provides an approximated but direct connection with the physics of disordered system and, in particular, of mean field spin glasses. Using this and the fact that the interaction is controlled by a projector operator on the loop space of the circuit. We estimate the number of stationary points of the approximate Lyapunov function and provide a scaling formula as an upper bound in terms of the circuit topology only.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS1987

Hybrid analog-digital associative neural network

Random access memory is used to store synaptic information in the form of a matrix of rows and columns of binary digits. N rows read in sequence are processed through switches and resistors, and a summing amplifier to N neural amplifiers in sequence, one row for each amplifier, using a first array of sample-and-hold devices S/H1 for commutation. The outputs of the neural amplifiers are stored in a second array of sample-and-hold devices S/H2 so that after N rows are processed, all of the second array of sample-and-hold devices are updated. A second memory may be added for binary values of 0 and -1, and processed simultaneously with the first to provide for values of 1, 0, and -1, the results of which are combined in a difference amplifier.

Moopenn, Alexander W.↗
NASA NTRS1989

Hybrid analog-digital associative neural network

Random access memory is used to store synaptic information in the form of a matrix of rows and columns of binary digits. N rows read in sequence are processed through switches and resistors, and a summing amplifier to N neural amplifiers in sequence, one row for each amplifier, using a first array of sample-and-hold devices S/H1 for commutation. The outputs of the neural amplifiers are stored in a second array of sample-and-hold devices S/H2 so that after N rows are processed, all of said second array of sample-and-hold devices are updated. A second memory may be added for binary values of 0 and -1, and processed simultaneously with the first to provide for values of 1, 0, and -1, the results of which are combined in a difference amplifier.

Moopenn, Alexander W.↗
DOE OSTI2014

Resistive switching in ultra-thin La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrRuO{sub 3} superlattices

Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers with macroscopic world. Here, we report the study of the resistive switching characteristics of a hybrid structure made out of a superlattice with ultrathin layers of two ferromagnetic metallic oxides, La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) and SrRuO{sub 3} (SRO). Bipolar resistive switching memory effects are measured on these LSMO/SRO superlattices, and the observed switching is explainable by ohmic and space charge-limited conduction laws. It is evident from the endurance characteristics that the on/off memory window of the cell is greater than 14, which indicates that this cell can reliably distinguish the stored information between high and low resistance states. The findings may pave a way to the construction of devices based on nonvolatile resistive memory effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2001

A radiation - tolerant, low - power non - volatile memory based on silicon nanocrystal quantum dots.

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in Si02 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled.

Green, M. L.↗
DOE OSTI2023

Independent malware detection architecture

A system and method (referred to as the system) detect malware by training a rule-based model, a functional based model, and a deep learning-based model from a memory snapshot of a malware free operating state of a monitored device. The system extracts a feature set from a second memory snapshot captured from an operating state of the monitored device and processes the feature set by the rule-based model, the functional-based model, and the deep learning-based model. The system identifies identifying instances of malware on the monitored device without processing data identifying an operating system of the monitored device, data associated with a prior identification of the malware, data identifying a source of the malware, data identifying a location of the malware on the monitored device, or any operating system specific data contained within the monitored device.

Smith, Jared M.↗
DOE OSTI2010

Petascale Parallelization of the Gyrokinetic Toroidal Code

The Gyrokinetic Toroidal Code (GTC) is a global, three-dimensional particle-in-cell application developed to study microturbulence in tokamak fusion devices. The global capability of GTC is unique, allowing researchers to systematically analyze important dynamics such as turbulence spreading. In this work we examine a new radial domain decomposition approach to allow scalability onto the latest generation of petascale systems. Extensive performance evaluation is conducted on three high performance computing systems: the IBM BG/P, the Cray XT4, and an Intel Xeon Cluster. Overall results show that the radial decomposition approach dramatically increases scalability, while reducing the memory footprint - allowing for fusion device simulations at an unprecedented scale. After a decade where high-end computing (HEC) was dominated by the rapid pace of improvements to processor frequencies, the performance of next-generation supercomputers is increasingly differentiated by varying interconnect designs and levels of integration. Understanding the tradeoffs of these system designs is a key step towards making effective petascale computing a reality. In this work, we examine a new parallelization scheme for the Gyrokinetic Toroidal Code (GTC) [?] micro-turbulence fusion application. Extensive scalability results and analysis are presented on three HEC systems: the IBM BlueGene/P (BG/P) at Argonne National Laboratory, the Cray XT4 at Lawrence Berkeley National Laboratory, and an Intel Xeon cluster at Lawrence Livermore National Laboratory. Overall results indicate that the new radial decomposition approach successfully attains unprecedented scalability to 131,072 BG/P cores by overcoming the memory limitations of the previous approach. The new version is well suited to utilize emerging petascale resources to access new regimes of physical phenomena.

42 ENGINEERING↗
DOE OSTI2023

Apparatus and methods for managing packet transfer across a memory fabric physical layer interface

An apparatus and method for managing packet transfer between a memory fabric having a physical layer interface higher data rate than a data rate of a physical layer interface of another device, receives incoming packets from the memory fabric physical layer interface wherein at least some of the packets include different instruction types. The apparatus and method determine a packet type of the incoming packet received from the memory fabric physical layer interface and when the determined incoming packet type is of a type containing an atomic request, the method and apparatus prioritizes transfer of the incoming packet with the atomic request over other packet types of incoming packets, to memory access logic that accesses local memory within an apparatus.

Blagodurov, Sergey↗
NASA NTRS1985

Feasibility of self-structured current accessed bubble devices in spacecraft recording systems

The self-structured, current aperture approach to magnetic bubble memory is described. Key results include: (1) demonstration that self-structured bubbles (a lattice of strongly interacting bubbles) will slip by one another in a storage loop at spacings of 2.5 bubble diameters, (2) the ability of self-structured bubbles to move past international fabrication defects (missing apertures) in the propagation conductors (defeat tolerance), and (3) moving bubbles at mobility limited speeds. Milled barriers in the epitaxial garnet are discussed for containment of the bubble lattice. Experimental work on input/output tracks, storage loops, gates, generators, and magneto-resistive detectors for a prototype device are discussed. Potential final device architectures are described with modeling of power consumption, data rates, and access times. Appendices compare the self-structured bubble memory from the device and system perspectives with other non-volatile memory technologies.

Nelson, G. L.↗
NASA NTRS2015

Shape Memory Alloy Rock Splitters (SMARS) - A Non-Explosive Method for Fracturing Planetary Rocklike Materials and Minerals

A static rock splitter device based on high-force, high-temperature shape memory alloys (HTSMAs) was developed for space related applications requiring controlled geologic excavation in planetary bodies such as the Moon, Mars, and near-Earth asteroids. The device, hereafter referred to as the shape memory alloy rock splitter (SMARS), consisted of active (expanding) elements made of Ni50.3Ti29.7Hf20 (at.%) that generate extremely large forces in response to thermal input. The preshaping (training) of these elements was accomplished using isothermal, isobaric and cyclic training methods, which resulted in active components capable of generating stresses in excess of 1.5 GPa. The corresponding strains (or displacements) were also evaluated and were found to be 2 to 3 percent, essential to rock fracturing and/or splitting when placed in a borehole. SMARS performance was evaluated using a test bed consisting of a temperature controller, custom heaters and heater holders, and an enclosure for rock placement and breakage. The SMARS system was evaluated using various rock types including igneous rocks (e.g., basalt, quartz, granite) and sedimentary rocks (e.g., sandstone, limestone).

NiTiHf↗
DOE OSTI2018

Freestanding 3D Mesostructures, Functional Devices, and Shape-Programmable Systems Based on Mechanically Induced Assembly with Shape Memory Polymers

Capabilities for controlled formation of sophisticated 3D micro/nanostructures in advanced materials have foundational implications across a broad range of fields. Recently developed methods use stress release in prestrained elastomeric substrates as a driving force for assembling 3D structures and functional microdevices from 2D precursors. A limitation of this approach is that releasing these structures from their substrate returns them to their original 2D layouts due to the elastic recovery of the constituent materials. Here, a concept in which shape memory polymers serve as a means to achieve freestanding 3D architectures from the same basic approach is introduced, with demonstrated ability to realize lateral dimensions, characteristic feature sizes, and thicknesses as small as ≈500, 10, and 5 µm simultaneously, and the potential to scale to much larger or smaller dimensions. Wireless electronic devices illustrate the capacity to integrate other materials and functional components into these 3D frameworks. Quantitative mechanics modeling and experimental measurements illustrate not only shape fixation but also capabilities that allow for structure recovery and shape programmability, as a form of 4D structural control. These ideas provide opportunities in fields ranging from micro-electromechanical systems and microrobotics, to smart intravascular stents, tissue scaffolds, and others.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A Processable Shape Memory Polymer System for Biomedical Applications

Polyurethane shape memory polymers (SMPs) with tunable thermomechanical properties and advanced processing capabilities are synthesized, characterized, and implemented in the design of a microactuator medical device prototype. The ability to manipulate glass transition temperature ( T g ) and crosslink density in low-molecular weight aliphatic thermoplastic polyurethane SMPs is demonstrated using a synthetic approach that employs UV catalyzed thiol-ene “click” reactions to achieve postpolymerization crosslinking. Polyurethanes containing varying C=C functionalization are synthesized, solution blended with polythiol crosslinking agents and photoinitiator and subjected to UV irradiation, and the effects of number of synthetic parameters on crosslink density are reported. Thermomechanical properties are highly tunable, including glass transitions tailorable between 30 and 105 °C and rubbery moduli tailorable between 0.4 and 20 MPa. This new SMP system exhibits high toughness for many formulations, especially in the case of low crosslink density materials, for which toughness exceeds 90 MJ m –3 at select straining temperatures. To demonstrate the advanced processing capability and synthetic versatility of this new SMP system, a laser-actuated SMP microgripper device for minimally invasive delivery of endovascular devices is fabricated, shown to exhibit an average gripping force of 1.43 ± 0.37 N and successfully deployed in an in vitro experimental setup under simulated physiological conditions.

42 ENGINEERING↗
DOE OSTI2016

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiO{sub x}-based resistive switching memory

Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiO{sub x})-based resistive switching (RS) memory using TiW/SiO{sub x}/TiW device structures. The program window (difference between SET voltage and RESET voltage) is dependent on external series resistance, demonstrating that the SET process is due to a voltage-triggered mechanism. The program window has been optimized for program/erase disturbance immunity and reliability for circuit-level applications. The SET and RESET transitions have also been characterized using a dynamic conductivity method, which distinguishes the self-compliance behavior due to an internal series resistance effect (filament) in SiO{sub x}-based RS memory. By using a conceptual “filament/resistive gap (GAP)” model of the conductive filament and a proton exchange model with appropriate assumptions, the internal filament resistance and GAP resistance can be estimated for high- and low-resistance states (HRS and LRS), and are found to be independent of external series resistance. Our experimental results not only provide insights into potential reliability issues but also help to clarify the switching mechanisms and device operating characteristics of SiO{sub x}-based RS memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1991

Formal verification of an MMU and MMU cache

We describe the formal verification of a hardware subsystem consisting of a memory management unit and a cache. These devices are verified independently and then shown to interact correctly when composed. The MMU authorizes memory requests and translates virtual addresses to real addresses. The cache improves performance by maintaining a LRU (least recently used) list from the memory resident segment table.

Schubert, E. T.↗
NASA NTRS2008

Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same

Switches having an in situ grown carbon nanotube as an element thereof, and methods of fabricating such switches. A carbon nanotube is grown in situ in mechanical connection with a conductive substrate, such as a heavily doped silicon wafer or an SOI wafer. The carbon nanotube is electrically connected at one location to a terminal. At another location of the carbon nanotube there is situated a pull electrode that can be used to elecrostatically displace the carbon nanotube so that it selectively makes contact with either the pull electrode or with a contact electrode. Connection to the pull electrode is sufficient to operate the device as a simple switch, while connection to a contact electrode is useful to operate the device in a manner analogous to a relay. In various embodiments, the devices disclosed are useful as at least switches for various signals, multi-state memory, computational devices, and multiplexers.

Kaul, Anupama B.↗
DOE OSTI2025

High-Resolution Full-Field Structural Microscopy of the Voltage-Induced Filament Formation in VO 2 -Based Neuromorphic Devices

In order to make neuromorphic functions in memristive devices more efficient, information about the structural properties of filament formation at the micro- and mesoscopic scales is necessary. Despite extensive research on VO 2 , a key material due to its filament formation, local operando structural measurements remain challenging and often involve destructive specimen preparation and long rastering times, greatly limiting the scope of experimental studies. Utilizing dark-field X-ray microscopy (DFXM), a fullfield imaging modality, structural signatures of the filament formation process operando are revealed in VO 2 devices. DFXM experiments illustrate that rutile filaments contain isolated monoclinic clusters, indicating structural nonuniformity interior to the filament. The formation of the rutile phase beneath device electrodes was shown to precede filament development, followed by the formation of filament paths guided by nucleation sites within the device. Finally, a medium-term (<30 min) memory mechanism is observed in VO 2 , mediated by sites within the device gap that tend to switch at significantly lower voltages after electrical cycling, a tendency that persists through a brief thermal reset. High spatial resolution, large field-of-view, structure selectivity, and fast signal acquisition of DFXM provided insight into structural features of the filamentary channel and surrounding regions during voltage cycling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

EmSense: A High-Resolution Emulated Sensor for Experiments with the Smart Grid and Distributed Ledger Technology

This work involves the development of a device - EmSense (“Emulated Sensor”) - that emulates a high-resolution sensor for a power grid. The device collects raw current and voltage sensor data which derive from ORNL's signature library. This library is a dataset that ORNL curates from many different sources that include power systems from various utilities. The EmSense packages the data from the library in the form of IEC 61850 Sampled Value (SV) packets and then broadcasts these SV packets on the network. In another mode, EmSense can generate artificial sinusoidal data that appears as waveforms for voltage and current signals. EmSense has an internal algorithm for determining the period of a signal based on the data so that the period can be specified as a variable in the IEC 61850 packets. The purpose of EmSense is to allow for experimentation with the Dark Net Infrastructure where a variety of power line sensors must be represented along with their typical communication traffic. The EmSense device was developed in coordination with the software for receiving and processing the packets in the Distributed Ledger Technology (DLT) framework of the DarkNet Project. This receiving software must have a methodology for dealing with information of high velocity, variety, and volume. Experimenting with EmSense facilitates the development of such software. The results showed that the DLT framework and the trust-anchoring approach managed to process a large flow of traffic even with up to six instances of EmSense device broadcasting data. This was achieved without overfilling packet queues in the memory of the actual hardware of the DLT devices or causing the Central Processing Unit (CPU) of the hardware to be overwhelmed. The DLTs were also able to store the data in a compact and useful form for later analysis and archival purposes.

Werth, Aaron↗
DOE OSTI2019

Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films

Abstract Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls (tail-to-tail, head-to-tail, head-to-head) in (001) BiFeO3 films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become rather active and possess relatively long average lengths. This is due to the high nucleation energy and relatively low growth energy for charged domain walls. Finally, we demonstrate the manipulation of domain walls through successive electric writings, resulting in well-aligned conduction paths as designed, paving the way for their application in advanced spintronic, memory and communication nano-devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗