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Microstructural Evolution of the Thin Films of a Donor–Acceptor Semiconducting Polymer Deposited by Meniscus-Guided Coating

Crucial to the development and refinement of organic electronics is a fundamental understanding of how deposition processes affect the active material’s resulting microstructure in the thin film. Meniscus-guided coating (MGC) methods are attractive because of their amenability to high-throughput, industrially relevant continuous processes like roll-to-roll deposition, but the mechanism of solid film formation has not been elucidated and is valuable for the precise control of thin-film morphology and thus ultimate device performance. Here, in this work, we investigate the microstructural evolution of thin films of a diketopyrrolopyrrole–terthiophene donor–acceptor polymer semiconductor using both in situ and ex situ X-ray diffraction methods. On the basis of a comparison of disorder between the film bulk and the top surface and a depth profiling of the out-of-plane orientation of crystallites, we find that faster coating speeds introduce more disorder into the resulting films because the stochastic nucleation of disordered crystallites at the meniscus air–liquid interface becomes more dominant than substrate-mediated nucleation. Our results suggest that there exist three separate deposition regimes—namely the shear-dominate, disorder-dominate, and Landau–Levich–Derjaguin regimes—revealed by observing both polymer alignment via dry film thickness and optical dichroism, a property sensitive to the flow and shear fields. At low coating speeds, the shear strain imparted upon the solution directly induces polymer alignment, causing an increase in dichroism as a function of coating speed. When solvent evaporation becomes too rapid as coating speeds increase, a decrease in the dichroic ratio is observed before the classical Landau–Levich–Derjaguin regime occurs at the highest coating speeds, resulting in isotropic films. The preservation of out-of-plane crystalline texture throughout the thickness of the films is seen only for lower coating speeds, and a study of different deposition temperatures similarly indicates that the lower overall solvent evaporation is conducive to this process. Increased paracrystalline disorder (i.e., peak broadening) is observed by grazing-incidence wide-angle X-ray diffraction at the top interface of the dry films and at higher coating speeds. Together, these results indicate that more rapid solvent evaporation at higher coating speeds causes increased disorder, which can cause the nucleation of misaligned crystallites, affect the dichroic ratio, and may frustrate the alignment of polymer molecules in the amorphous regions of the film. Finally, because the polymer studied and the deposition technique used are representative models, these results are likely general for aggregating, semicrystalline donor–acceptor polymers deposited with MGC.

36 MATERIALS SCIENCE↗

Characterizing Hygroscopic Films of Polyzwitterions in Electric Fields Using Neutron and X-ray Reflectometries: Electrostriction or Mass Loss?

Herein we study responses of thermally annealed ultrathin films deposited on silicon substrates and containing polyzwitterions to applied electric fields by using specular neutron reflectometry (NR). In particular, we applied 7 kV under vacuum at 150 °C on the films containing poly(1-(3-sulfonatopropyl)-2-vinylpyridinium) (P2VPPS) and its blends with either a deuterated ionic liquid (EMIMBF 4 - d 11 ), potassium bromide (KBr), or deuterated sodium polystyrenesulfonate (NaPSS-d 7 ). The voltage was applied over an air gap, and the in situ neutron reflectivity measurements allowed us to measure changes in the films. In all the cases, we measured decreases in thicknesses of the films, which varied up to ~8% depending on the added salt. Posteriori X-ray reflectivity (XRR) measurements on the same films at room temperature reveal that these films were highly hygroscopic, which led to the presence of water in these films. Analysis of the NR and the XRR revealed that the decrease in the thickness of the films in the neutron reflectivity experiments on heating resulted from the loss of water and the ionic liquid but not from electrostrictive effects. The in situ NR and posteriori XRR experiments revealed not only the hygroscopic nature of these films but also depth-resolved structural rearrangements due to the applied electric fields in the films containing electrolytes and polyelectrolytes. This work shows that a combination of NR and XRR can be used to distinguish between mass loss and electrostriction in films containing charged polymers such as polyzwitterions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electrochemical Characterization and Catalytic Application of Gold-Supported Ferrocene-Containing Diblock Copolymer Thin Films in Ethanol Solution

This study reports the electrochemical behavior and catalytic property of electrode-supported thin films of polystyrene- block -poly(2-(acryloyloxy)ethyl ferrocenecarboxylate) (PS- b -PAEFc) in an ethanol (EtOH) solution. The electrochemical properties of PS- b -PAEFc films with different PAEFc volume fractions (f PAEFc = 0.47, 0.30, and 0.17) in 0.1 M ethanolic sodium hexafluorophosphate were compared with those in an acetonitrile (MeCN) solution of 0.1 M tetrabutylammonium hexafluorophosphate. Pristine PS- b -PAEFc films did not afford significant faradaic currents in the EtOH solution because EtOH is a nonsolvent for both PS and PAEFc. However, the films could be rendered redox-active in the EtOH solution by applying potentials in the MeCN solution to induce the redox-associated incorporation of the supporting electrolytes into the films. Atomic force microscopy images verified the stability of PAEFc microdomains upon electrochemical measurements in these solutions. Cyclic voltammograms measured in the EtOH solution for PS- b -PAEFc with the larger f PAEFc were diffusion-controlled regardless of ellipsometric film thickness (23 – 152 nm) at relatively slow scan rates, in contrast to those in the MeCN solution that were controlled by surface-confined redox species. The electron propagation efficiency in the EtOH solution was significantly lower than that in the MeCN solution due to the poorer swelling of the films, which limited the migration of counter ions and the collisional motions of the ferrocene moieties. PS- b -PAEFc films were applied as electrochemically-responsive heterogeneous catalysts based on the ferrocenium moieties for Michael addition reaction between methyl vinyl ketone and ethyl 2-oxocyclopentanecarboxylate (E2OC) in 0.1 M NaPF 6 /EtOH. The catalytic activities of thin films were similar regardless of f PAEFc , suggesting that the catalytic reaction took place for the reactants that could penetrate through the film and reach PAEFc microdomains communicable with the underlying electrode. Interestingly, the permeability of PS-b-PAEFc films provided a means to control the reaction selectivity, as suggested by negligible reaction of E2OC with trans -4-phenyl-3-buten-2-one.

36 MATERIALS SCIENCE↗

Effects of Oxygen Modification on the Structural and Magnetic Properties of Highly Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films

Abstract La 0.7 Sr 0.3 MnO 3 , a strong semi-metallic ferromagnet having robust spin polarization and magnetic transition temperature ( T C ) well above 300 K, has attracted significant attention as a possible candidate for a wide range of memory, spintronic, and multifunctional devices. Since varying the oxygen partial pressure during growth is likely to change the structural and other physical functionalities of La 0.7 Sr 0.3 MnO 3 (LSMO) films, here we report detailed investigations on structure, along with magnetic behavior of LSMO films with same thickness (~30 nm) but synthesized at various oxygen partial pressures: 10, 30, 50, 100, 150, 200 and 250 mTorr. The observation of only ( 00 l ) reflections without any secondary peaks in the XRD patterns confirms the high-quality synthesis of the above-mentioned films. Surface morphology of the films reveals that these films are very smooth with low roughness, the thin films synthesized at 150 mTorr having the lowest average roughness. The increasing of magnetic T C and sharpness of the magnetic phase transitions with increasing oxygen growth pressure suggests that by decreasing the oxygen growth pressure leads to oxygen deficiencies in grown films which induce oxygen inhomogeneity. Thin films grown at 150 mTorr exhibits the highest magnetization with T C = 340 K as these thin films possess the lowest roughness and might exhibit lowest oxygen vacancies and defects. Interpretation and significance of these results in the 30 nm LSMO thin films prepared at different oxygen growth pressures are also presented, along with the existence and growth pressure dependence of negative remanent magnetization (NRM) of the above-mentioned thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Extraordinary optical transmission in nanopatterned ultrathin metal films without holes

In this study, we experimentally and theoretically demonstrate that a continuous gold film on a periodically textured substrate exhibits extraordinary optical transmission, even though no holes were etched in the film. Our film synthesis started by nanoimprinting a periodic array of nanocups with a period of ~750 nm on a polystyrene film over a glass substrate. A thin non-conformal gold film was sputter-deposited on the polystyrene by angle-directed deposition. The gold film was continuous with spatial thickness variation, the film being thinnest at the bottom of the nanocup. Measurements revealed an extraordinary transmission peak at a wavelength just smaller than the period, with an enhancement of ~2.5 compared to the classically expected value. Scattering matrix simulations model well the transmission and reflectance measurements when an ultrathin gold layer (~5 nm), smaller than the skin depth is retained at the bottom of the nanocups. Electric field intensities are enhanced by >100 within the nanocup, and ~40 in the ultrathin gold layer causing transmission through it. We show a wavelength red-shift of ~30 nm in the extraordinary transmission peak when the nanocups are coated with a thin film of a few nanometers, which can be utilized for biosensing. The continuous corrugated metal films are far simpler structures to observe extraordinary transmission, circumventing the difficult process of etching the metal film. Such continuous metal films with ultrathin regions are simple platforms for non-linear optics, plasmonics, and biological and chemical sensing.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Orbital orientation mapping of V 2 O 5 thin films

We report the effects of growth methods on the orbital orientation in vanadium pentoxide (V 2 O 5 ) thin films, an important factor to consider when selecting growth techniques for highly selective catalysts and devices. Thermal evaporation and sol-gel methods were used to synthesize the V 2 O 5 films. The surface morphology, roughness, and orientation of the films were characterized by atomic force microscopy and x-ray diffraction. Surface electronic properties and oxidation states were assessed by x-ray photoemission spectroscopy. Polarized x-ray absorption spectroscopy demonstrated that the thermally evaporated film [which was in the (001) orientation] exhibited greater anisotropy than the (100) oriented sol-gel film. The observed increase in anisotropy agrees well with computational findings which revealed that more vanadyl bonds are present at the surface of the thermally evaporated film than at the surface of the sol-gel film. The same computational study also found that the orientation of these bonds is more parallel to the film surface in the thermally evaporated film than in the sol-gel film. Finally, the data suggest that the method of growth may be used as a controlled variable to select key film characteristics for potential applications.

36 MATERIALS SCIENCE↗

Microstructure, mechanical and electrical properties of nanocrystalline W-Mo thin films

The effect of sputtering pressure on the surface/interface microstructure, crystal phase, mechanical properties and electrical characteristics of nanocrystalline W-Mo films is reported. The W-Mo films (≈300 nm) with variable microstructure were deposited under variable argon (Ar) sputtering pressure (P Ar ), which is varied in the range of 3-19 mTorr. X-ray diffraction analyses indicate that the W-Mo films crystallize in thermodynamically stable α-phase of W. However, the crystal-quality degradation occurs for W-Mo films deposited at higher P Ar due to difference in the adatom mobilities. The average grain size (d) of the W-Mo films was in the range of 11-24 nm; grain size decreases with increasing P Ar . The effect of P Ar and associated microstructure are significant on the mechanical characteristics; the hardness (H) and modulus of elasticity (E r ) of W-Mo films deposited at lower P Ar were higher but decreases continuously with increasing P Ar . The W-Mo films deposited under optimum sputtering pressure exhibit superior mechanical characteristics: H=40 GPa, E r =275 GPa, H/E r =0.8, and H 3 /E r 2 =0.145 GPa, which are higher compared to pure, α-phase W-films. The W-Mo films deposited at P Ar =3-9 mTorr exhibit high resistivity≈350-400 μΩ-cm, which decreases to 150-200 μΩ-cm for films deposited at higher P Ar . Based on the results, structure-mechanical-electrical property correlation in W-Mo films is established.

36 MATERIALS SCIENCE↗

Optimization of electrical treatment strategy for surface roughness reduction in conducting thin films

The surface roughness of deposited conducting thin films is responsible for various materials reliability problems in nanoelectronics and nanofabrication technologies. In this work, we report a modeling and simulation study that aims at optimizing the electrical surface treatment of deposited conducting thin films as a physical processing strategy for their surface roughness reduction. Our research is based on a continuum model of film surface morphological evolution that accounts for the residual stress in the deposited conducting thin film, the film’s wetting of the substrate layer that it is deposited on, film texture and surface diffusional anisotropy, and surface electromigration. Through systematic linear stability analysis and dynamical simulation protocols, we examine in detail the effects of film surface crystallographic orientation and applied electric field direction toward minimizing the electric field strength required for film surface smoothening. We believe that the critical electric field strength requirement for surface roughness reduction on {110}, {100}, and {111} surfaces of face-centered cubic crystalline conducting thin films exhibits a very strong dependence on the applied electric field direction, expressed as the electric field misalignment with respect to the principal residual stress directions in the film and the fast surface diffusion directions. Due to these findings, we optimize the electrical treatment strategy for surface roughness reduction of conducting thin films with respect to all relevant processing and material parameters.

42 ENGINEERING↗

Novel wide band gap materials for highly efficient thin film tandem solar cells. Final report

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se 2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949 mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PV's goal in Phase I of the DOE SBIR was to (1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and (2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se 2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

14 SOLAR ENERGY↗

Investigation of NbN x Thin Films and Nanoparticles Grown by Pulsed Laser Deposition and Thermal Diffusion

Niobium nitride films (NbN x ) were grown on Nb and Si (100) substrates using pulsed laser deposition (PLD), laser heating, and thermal diffusion methods. Niobium nitride films were deposited on Nb substrates using PLD with a Q-switched Nd: YAG laser (λ = 1064 nm, 40 ns pulse width, and 10 Hz repetition rate) at different laser fluences, different nitrogen background pressures and deposition temperatures. The effect of changing PLD parameters for films done by PLD was studied. The seen observations establish guidelines for adjusting the laser parameters to achieve the desired morphology and phase of the grown NbN x films. When the fabrication parameters are fixed, except for laser fluence, surface roughness, deposition rate, nitrogen content, and grain size increases with increasing laser fluence. Increasing nitrogen background pressure leads to change in the phase structure of the NbN x films from mixed -Nb 2 N and cubic δ-NbN phases to single hexagonal β-Nb 2 N. A change in substrate temperature led to a pronounced change in the preferred orientation of the crystal structure, the phase transformation, surface roughness, and composition of the films. The structural, electronic, and nanomechanical properties of niobium nitride PLD deposited at different nitrogen pressures (26.7-66.7 Pa) on Si(100) were investigated. The NbN x , films exhibited a cubic δ-NbN with a strong (111) orientation. A correlation between surface morphology, electronic, and superconducting properties was found. The highly-textured δ-NbN films have a T c up to 15.07 K. The film was deposited at a nitrogen background pressure of 66.7 Pa exhibited improved superconducting properties and showed higher hardness values as compared to films deposited at lower nitrogen pressures. NbN nanoclusters that were deposited on carbon coated Cu-grids using PLD at laser fluence of 8 J/cm 2 were observed. Niobium nitride is prepared by heating of Nb sample in a reactive nitrogen atmosphere (133 Pa) at a temperature of 900 °C. The results suggest that the niobium nitride was crystalline in the single phase of hexagonal β-Nb 2 N. As heating time increased, film growth continued with improvement in hardness and modulus. The XRD of samples prepared by a thermal diffusion method at low nitrogen pressure and high temperatures were reported. The samples were prepared at temperatures ranging from 1250-1500 °C. 2D-XRD images of samples, processed at temperature range from 1250 -1500 °C at pressure of 1.3×10 -3 Pa, showed the formation of an α phase. As pressure increased to 0.13 Pa, an α-NbN phase mixed with β-Nb 2 N phase appeared. Niobium nitride samples were prepared by laser nitridation using a Q-switched Nd: YAG nanosecond laser and Ti: sapphire femtosecond lasers. The effects of laser fluence on the formed phase, surface morphology, and electronic properties of the NbN x were investigated. Samples were prepared using Nd: YAG laser are of NbN x in the cubic δ-NbN phase. The femtosecond laser-nitrided samples were prepared by different laser fluences of 0.1-1.3 mJ/cm 2 at 4.0×10 4 Pa nitrogen pressure. NbN x samples with mixedα, β and δ phases were observed. The cubic δ-NbN structure is dominated over the other two phases.

Farha, Ashraf Hassan↗

Water-Dependent Blending of Pectin Films: The Mechanics of Conjoined Biopolymers

Biodegradable pectin polymers have been recommended for a variety of biomedical applications, ranging from the delivery of oral drugs to the repair of injured visceral organs. A promising approach to regulate pectin biostability is the blending of pectin films. To investigate the development of conjoined films, we examined the physical properties of high-methoxyl pectin polymer-polymer (homopolymer) interactions at the adhesive interface. Pectin polymers were tested in glass phase (10–13% w/w water content) and gel phase (38–41% w/w water content). The tensile strength of polymer-polymer adhesion was measured after variable development time and compressive force. Regardless of pretest parameters, the adhesive strength of two glass phase films was negligible. In contrast, adhesion testing of two gel phase films resulted in significant tensile adhesion strength (p < 0.01). Adhesion was also observed between glass phase and gel phase films—likely reflecting the diffusion of water from the gel phase to the glass phase films. In studies of the interaction between two gel phase films, the polymer-polymer adhesive strength increased linearly with increasing compressive force (range 10–80 N) (R 2 = 0.956). In contrast, adhesive strength increased logarithmically with time (range 10–10,000 s) (R 2 = 0.913); most of the adhesive strength was observed within minutes of contact. Fracture mechanics demonstrated that the adhesion of two gel phase films resulted in a conjoined film with distinctive physical properties including increased extensibility, decreased stiffness and a 30% increase in the work of cohesion relative to native polymers (p < 0.01). Scanning electron microscopy of the conjoined films demonstrated cross-grain adhesion at the interface between the adhesive homopolymers. These structural and functional data suggest that blended pectin films have emergent physical properties resulting from the cross-grain intermingling of interfacial pectin chains.

62 RADIOLOGY AND NUCLEAR MEDICINE↗

Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.

Miyoshi, Kazuhisa↗

Mechanical strength and tribological behavior of ion-beam-deposited boron nitride films on non-metallic substrates

An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.

Miyoshi, Kazuhisa↗

Study of diamond film growth and properties

The objective was to study diamond film growth and its properties in order to enhance the laser damage threshold of substrate materials. Calculations were performed to evaluate laser induced thermal stress parameter, R(sub T) of diamond. It is found that diamond has several orders of magnitude higher in value for R(sub T) compared to other materials. Thus, the laser induced damage threshold (LIDT) of diamond is much higher. Diamond films were grown using a microwave plasma enhanced chemical vapor deposition (MPECVD) system at various conditions of gas composition, pressure, temperature, and substrate materials. A 0.5 percent CH4 in H2 at 20 torr were ideal conditions for growing of high quality diamond films on substrates maintained at 900 C. The diamond films were polycrystalline which were characterized by scanning electron microscopy (SEM) and Raman scattering spectroscopy. The top surface of the growing film is always rough due to the facets of polycrystalline film while the back surface of the film replicates the substrate surface. An analytical model based on two dimensional periodic heat flow was developed to calculate the effective in-plane (face parallel) diffusivity of a two layer system. The effective diffusivity of diamond/silicon samples was measured using a laser pulse technique. The thermal conductivity of the films was measured to be 13.5 W/cm K, which is better than that of a type Ia natural diamond. Laser induced damage experiments were performed on bare Si substrates, diamond film coated Si, and diamond film windows. Significant improvements in the LIDT were obtained for diamond film coated Si compared to the bare Si.

Albin, Sacharial↗

Synthesis and superconducting properties of Tl-Ba-Ca-Cu-O films

Tl-Ba-Ca-Cu-O superconducting films were synthesized by sputtering either from a single target or from two oxide targets in a symmetric configuration. Films with zero resistance Tc of up to 122 K were obtained after various postannealing treatments at 870-950 C under an oxygen atmosphere. The composition of the films is not very homogeneous on the submicrometer scale. The critical current of these films at 77 K is in the 1000 A/sq cm to 10,000 A/sq cm range, which is much smaller than that of films prepared on SrTiO3 and LaAlO3 substrates. The low critical current density in these films is probably due to the granularity in the films. The morphology, structure, and magnetic and superconducting properties of the films were studied. Films prepared by two different sputtering techniques have similar results which depend mostly on the film compositions and their annealing conditions. It is found that the induced magnetic flux in the film decreases rapidly with increasing temperature, indicating weak flux pinning.

Liou, S. H.↗

The Effect of Wake Passing on Turbine Blade Film Cooling

The effect of upstream blade row wake passing on the showerhead film cooling performance of a downstream turbine blade has been investigated through a combination of experimental and computational studies. The experiments were performed in a steady-flow annular turbine cascade facility equipped with an upstream rotating row of cylindrical rods to produce a periodic wake field similar to that found in an actual turbine. Spanwise, chordwise, and temporal resolution of the blade surface temperature were achieved through the use of an array of nickel thin-film surface gauges covering one unit cell of showerhead film hole pattern. Film effectiveness and Nusselt number values were determined for a test matrix of various injectants, injectant blowing ratios, and wake Strouhal numbers. Results indicated a demonstratable reduction in film effectiveness with increasing Strouhal number, as well as the expected increase in film effectiveness with blowing ratio. An equation was developed to correlate the span-average film effectiveness data. The primary effect of wake unsteadiness was found to be correlated well by a chordwise-constant decrement of 0.094-St. Measurable spanwise film effectiveness variations were found near the showerhead region, but meaningful unsteady variations and downstream spanwise variations were not found. Nusselt numbers were less sensitive to wake and injection changes. Computations were performed using a three-dimensional turbulent Navier-Stokes code which was modified to model wake passing and film cooling. Unsteady computations were found to agree well with steady computations provided the proper time-average blowing ratio and pressure/suction surface flow split are matched. The remaining differences were isolated to be due to the enhanced mixing in the unsteady solution caused by the wake sweeping normally on the pressure surface. Steady computations were found to be in excellent agreement with experimental Nusselt numbers, but to overpredict experimental film effectiveness values. This is likely due to the inability to match actual hole exit velocity profiles and the absence of a credible turbulence model for film cooling.

Heidmann, James David↗

Friction and Wear Properties of As-Deposited and Carbon Ion-Implanted Diamond Films

Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 keV ion energy, resulting in a dose of 1.2 x 10(exp 17) carbon ions per cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40% relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and wear properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to lO(exp -8) mm(exp 3) N(exp -1) m(exp -1)) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4) mm(exp 7) N(exp -1) m(exp -1)) in ultrahigh vacuum. The carbon ion implantation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, non-diamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7) mm(exp 3) N(exp -1) m(exp-1)). Even in ultrahigh vacuum, the presence of the non-diamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6) mm(exp 3) N(exp -1) m(exp -1). Thus, the carbon ion-implanted, fine-grain diamond films can be effectively used as wear-resistant, self-lubricating coatings not only in air and dry nitrogen, but also in ultrahigh vacuum.

Miyoshi, Kazuhisa↗

CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

Jin, Michael H.-C.↗