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All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Literature Review of Optocouplers, Their polymer Components and Current Applicaitons

Optocouplers, also called optoisoloators and photocouplers, are devices that use a light emitting diode (LED) to conduct an electrical signal. The LED receives an electrical signal and emits light proportional to that signal. The light is then received by a photodetector and the signal is propagated. Optocouplers provide a high degree of electrical isolation and are therefore used extensively in commercial electronic equipment. Variations in optocouplers come from the type of photodetector used, the anatomy of the contents and the encapsulating polymers used. Current research involves investigating the tolerance of optocouplers to radiation for the purpose of improving spacecraft and satellites, as well as identifying failure mechanisms and improving design.

42 ENGINEERING↗
DOE OSTI2020

From IEC 61853 power measurements to PV system simulations.

The IEC 61853 PV module energy rating standard requires measuring module power (and hence efficiency) over a matrix of irradiance and temperature conditions. These matrix points represent nearly the full range of operating conditions encountered in the field in all but the most extreme locations, and create an opportunity to develop alternative approaches to existing modelssuch as the single-diode models and the Sandia Array Performance Modelfor calculating system performance. This report begins by discussing the bilinear interpolation and extrapolation method from IEC 61853-3, and then describes four existing model-based methods that could be used with matrix measurements. Then a new model is developed and all options are compared according to seven objective criteria using the matrix measurements of four PV modules of different technologies. The results show that the new model is an excellent candidate for launching power matrix-based PV system simulations.

14 SOLAR ENERGY↗
DOE OSTI2020

Time-Resolved Spectroscopy of Insulator-Metal Transitions: Exploring Low-Energy Dynamics in Strongly Correlated Systems. Final Report

Transition metal oxides (TMOs) have attracted much attention in recent years. The strong coupling between charge, spin, and orbital degrees of freedom creates novel functional properties. The research at the interplay between ferromagnetism, ferroelectricity and conductivity provides a promising way to the development of future spintronic devices. The interface characterization of multifunctional oxide heterostructures is crucial to understand deeply the magnetic response, spin injection and spin transport. In year one, we characterized optically the magnetic property with the method of magnetization-induced second-harmonic generation (MSHG), which is a sensitive technique to selectively probe the interface where the spatial inversion symmetry is broken. The interface of n-type BaTiO 3 (BTO)/La 0.67 Sr 0.33 MnO 3 (LSMO) forms a Schottky barrier and displays a good diode effect. By applying an external electric field across the sample, we observe the magnetoelectric (ME) coupling effect to modulate the interface magnetization. The voltage dependent magnetic contrast sharply vanishes at positive voltage (applied to LSMO contact) and reveals a ferromagnetic (FM)-to- antiferromagnetic (AFM) transition occurring at the interface, while the magneto-optic Kerr effect (MOKE) indicates that the bulk property is not affected. The strain mediated mechanism and ferroelectric (FE) polarization induced charge medicated mechanism are both discussed, but they do not play an important role in the observed magnetization transition. A new mechanism is proposed - the injected minority spins through strong Hund's interaction with the local magnetic moments at positive voltage weaken the double-exchange interaction of nearby Mn e g electrons, thereby reducing the ferromagnetic (FM) ordering. The dominant superexchange interaction of localized t 2g electrons finally leads to the AFM configuration. By reducing the electron carrier concentration of BTO, a positive voltage shift of the transition is observed. The oxygen richer sample with lower carrier concentration requires a higher voltage to increase the hole doping level of LSMO to induce the interfacial AFM phase. By inserting a thin (1nm) La 0.5 Ca 0.5 MnO 3 layer between BTO and LSMO, the interface magnetic response from LSMO is enhanced. In year two, a non-multiferroic heterostructure SrTiO 3 (STO)/ La 0.5 Ca 0.5 MnO 3 (LCMO)/La 0.67 Sr 0.33 MnO 3 (LSMO) was studied. In this system, the interface FM-AFM transition is observed at negative voltage. The STO layer may act as a hole-donating layer, which induces the hole transfer to LSMO making it overdoped, while the LCMO interlayer at the 0.5 hole doping level displays complicated CE type AFM phase. Thus the AFM phase is dominant at the interface and electron accumulation is required to induce the FM phase by applying a negative voltage. For oxygen rich sample, the magnetic MSHG loop reappears at high positive voltage (around +2.5 V). At high doping level (x > 0.5), LSMO exhibits A-type AFM order, consisting of AFM superexchange coupling between adjacent layers and intralayer FM double-exchange coupling. The less tensile strain of STO and LSMO due to a smaller lattice mismatch as compared to BTO would result in a weaker interlayer coupling . Thus, interfacial A-type AFM order can occur in STO/LCMO/LSMO heterostructure at high hole doping concentration. The study of ME coupling of multifunctional oxide heterostructures is definitely important to the development and performance of future spintronic devices. The results presented here regarding the interfacial magnetic transition controlled by an external electric field offer some new perspective to study the spin transport of magnetic tunnel junctions.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Optimization of DARHT Axis 1 Injector Voltage

The Dual-Axis Radiographic Hydrodynamic Test (DARHT) facility provides flash radiography capabilities using two electron Linear Induction Accelerators (LIA’s). Axis-1 of DARHT produces a 20- MeV, 2-kA, 80-ns-FWHM electron beam. The strict requirements for flash radiography require a detailed understanding of the LIA’s performance, including precision measurements of the injector electron beam energy. The technique for time resolved measurement of the electron beam energy using electron Permanent Magnet Spectrometer (ePMSpec) has been developed. The electron energy then is used to infer the voltage produced by the injector pulsed power. The injector pulsed power of DARHT I consists of a 1.5-MV, glycol-insulated Blumlein that is pulsecharged by a step-up transformer and switched by four, laser-triggered spark gaps. A series of increasing impedance transmission lines are used to transform the output voltage of the Blumlein to a maximum of 3.8MV at the diode. Figure 1a shows a graphic of the Axis-1 prime power tank, Blumlein and downstream transmission lines. The injector pulse power is designed to produce voltage on a velvet cathode located in the vacuum vessel. The specifications of the voltage-pulse flat-top over 60ns is +/-1%. A key element in the high-voltage circuit is the ethylene glycol Blumlein. The outer volume, adjacent to the laser triggered switches of the Blumlein, is a peaking capacitor. This is an independent volume that contains a mixture of ethylene glycol and water to make it an adjustable capacitor of 380 to 750 pF.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗
DOE OSTI2020

MOCVD Growth and Characterization of Wide Bandgap ZnGeN 2 Thin Films

ZnGeN 2 is a wide bandgap material having less than 0.1% lattice mismatch with GaN and bandgap within few percent of that of GaN. Based on the first principle calculations, the valence band of ZnGeN 2 is situated ~1.4 eV above that of GaN at the heterointerface. Such a staggered band alignment between two closely lattice matched materials has already been demonstrated promising for novel optoelectronic device designs, for example, high efficiency blue and green light emitting diodes. However, the research on ZnGeN 2 is yet to pass the inceptive period. We report on the growth of single crystalline ZnGeN 2 films using metalorganic chemical vapor deposition and investigation on the crystalline, optical, electrical properties. Diethylzinc (DEZn), germane (GeH 4 ) and ammonia were used as the precursors for Zn, Ge and N, respectively. Films were grown on GaN and sapphire substrates. The Zn/Ge atomic ratio in the films determined from energy dispersive X-ray spectroscopy was found to decrease with increase in growth temperature but to increase with increase in pressure and DEZn/GeH 4 molar flow rate ratio. The X-ray diffraction (XRD) 2θ-ω spectra of the single crystalline ZnGeN 2 films resembled those of orthorhombic (perfectly ordered cations) or distorted wurtzite (disordered cations) polymorphs. High resolution scanning transmission electron microscopy imaging was used to further investigate the crystalline quality and crystalline structure of the films. The single crystalline films on c-sapphire or GaN substrates were found to have planar surface from scanning electron micrographs while those on r-sapphire substrate had stepped surface. No near band edge peak but a broad peak at ~2.05 eV was observed in the photoluminescence (PL) spectra, which was attributed to the transitions involving deep level defects. The PL excitation spectra peaked around 3.4 eV, which is due to the enhanced absorption of photons having energy close to the band gap. The as grown films were found to be n-type with 10 18 – 10 19 cm -3 carrier densities and mobility up to 17 cm 2 /V·s. In the end, the advancement made in this work regarding the growth of ZnGeN 2 thin films is a footstep towards the understanding of the material itself and in turn, towards the implementation of ZnGeN 2 based novel device designs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Metalorganic chemical vapor deposition of ZnGeN 2 films on GaN: effects of cation stoichiometry on surface morphology and crystallinity

Novel optoelectronic device designs based on the heterostructures of III-N and II-IV-N 2 are promising to advance device performance significantly. For example, by utilizing InGaN-ZnGeN 2 quantum well (QW) structures instead of pure InGaN, the band structure engineering in the QW active region can lead to improved electron-hole wavefunction overlap, and thus enhance the radiative efficiency for photon generation. These novel heterostructures have great potential to address the current challenge of low quantum efficiency in InGaN QW based light emitting diodes emitting in green and beyond. The materials development of ZnGeN 2 is still at an early stage as compared to the much matured GaN material system. In an ideal octet rule preserving ordered structure of ZnGeN 2 , every N atom is coordinated by exactly two Zn and two Ge atoms. However, local violation of octet rule can be caused by non-ideal coordination of N by the cations. The disordered structure is thermodynamically less favorable but can still be achieved, for example, in kinetics-limited growth regime. The ordered ZnGeN 2 has a bandgap very close to that of GaN (~3.4 eV) and a lattice mismatch of <0.1% with GaN. Interestingly, the valence band of ZnGeN 2 has been predicted to be ~1 eV above that of GaN, which has inspired novel designs for high efficiency light emitters. In this work, we investigated the metalorganic chemical vapor deposition (MOCVD) of ZnGeN 2 films on GaN/c-sapphire templates. Diethylzinc (DEZn), germane (GeH4) and ammonia were used as the precursors for Zn, Ge and N, respectively. A systematic study was conducted to investigate the cation stoichiometry as a function of growth temperature (TG), total reactor pressure (P) and DEZn/GeH 4 molar flow rate ratio (RII/IV). Under the investigated growth window, the Zn/(Zn+Ge) composition in the films, determined from energy dispersive X-ray spectroscopy, decreased monotonically with increase in TG but increased with increase in P and RII/IV. Atom probe tomography data did not indicate the presence of any secondary phases such as Zn 3 N 2 or Ge 3 N 4 . The surface morphology and crystallinity of the grown films had strong correlation with the Zn/(Zn+Ge) composition. The scanning electron microscopy images showed that the near-stoichiometric films have planar surfaces whereas Zn-rich films had crystallites on their surface and the Zn-poor films had faceted surface. Scanning transmission electron microscopy (STEM) imaging revealed that the Zn-rich and Zn-poor films have columnar and filament-like morphology, respectively, whereas the near-stoichiometric films have continuous film-like cross-sectional morphology. TEM nano-diffraction patterns as well as X-ray diffraction 2θ-ω scan profiles indicate that the near stoichiometric films are single crystalline. Nano-diffraction pattern of the stoichiometric films resembled that of a disordered ZnGeN 2 structure. Room temperature Raman spectra of near-stoichiometric films showed only the phonon density of states like features of a cation disordered ZnGeN 2 . Cathodoluminescence and photoluminescence spectra measured at different temperatures had similar features with peak emission wavelength at ~ 2 eV. In conclusion, the stoichiometry of ZnGeN 2 films can be widely tuned by tuning the MOCVD growth parameters. The surface morphology and the crystallinity of the films were found to have strong correlation with the Zn/(Zn+Ge) composition. The stoichiometric ZnGeN 2 films grown on GaN were demonstrated with uniform surface morphology and high crystalline quality. The results from this work will provide pathway to implement ZnGeN 2 in device structures.

Karim, Md Rezaul↗
DOE OSTI2020

Developing inductively driven diagnostic X-ray sources to enable transformative radiography and diffraction capabilities on Z

Penetrating X-rays are one of the most effective tools for diagnosing high energy density experiments, whether through radiographic imaging or X-ray diffraction. To expand the X-ray diagnostic capabilities at the 26-MA Z Pulsed Power Facility, we have developed a new diagnostic X-ray source called the inductively driven X-pinch (IDXP). This X-ray source is powered by a miniature transmission line that is inductively coupled to fringe magnetic fields in the final power feed. The transmission line redirects a small amount of Zs magnetic energy into a secondary cavity where 150+ kA of current is delivered to a hybrid X-pinch. In this report, we describe the multi-stage development of the IDXP concept through experiments both on Z and in a surrogate setup on the 1 MA Mykonos facility. Initial short-circuit experiments to verify power ow on Z are followed by short-circuit and X-ray source development experiments on Mykonos. The creation of a radiography-quality X-pinch hot spot is verified through a combination of X-ray diode traces, laser shadowgraphy, and source radiography. The success of the IDXP experiments on Mykonos has resulted in the design and fabrication of an IDXP for an upcoming Z experiment that will be the first-ever X-pinch fielded on Z. We have also pursued the development of two additional technologies. First, the extended convolute post (XCP) has been developed as an alternate method for powering diagnostic X-pinches on Z. This concept, which directly couples the current owing in one of the twelve Z convolute posts to an X-pinch, greatly increases the amount of available current relative to an IDXP (900 kA versus 150 kA). Initial short-circuit XCP experiments have demonstrated the efficacy of power ow in this geometry. The second technology pursued here is the inductively driven transmission line (IDTL) current monitor. These low-current IDTLs seek to measure the current in the final power feed with high fidelity. After three generations of development, IDTL current monitors frequently return cleaner current measurements than the standard B-dot sensors that are fielded on Z. This is especially true on high-inductance experiments where the harshest conditions are created in the nal power feed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

X-ray Lasers: The evolution from Star Wars to the table-top [PowerPoint]

X-ray lasers have evolved from a Star Wars missile defense system to a table-top research tool: (1) LLNL proposes X-ray laser schemes in the 1970’s, (2) First X-ray lasers demonstrated in early 1980’s were nuclear pumped, (3) Demonstrated the world’s shortest wavelength, highest energy laser, (4) First laboratory X-ray laser demonstrated on Novette in 1984, (5) A decade of progress using the Nova laser (5 kJ) from 1985 to 1996, (6) X-ray lasers produced at the COMET table-top facility (<10 J) since 1997, (7) X-ray lasers used for plasma interferometry and other applications, (8) 10 Hz X-ray laser at 18.9 nm demonstrated in 2004 using 0.15 J drive, (9) 100 Hz X-ray laser at 13.9 nm produces 1 µJ of saturated output using 0.9 J drive from diode-pumped optical laser in 2014.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Highly Integrated Wide Bandgap Power Module for Next Generation Plug-In Vehicles (Final Report)

Wide bandgap devices are key enablers for high power density traction inverters. A highly integrated wide bandgap (WBG) power module enables higher temperature operation, higher inverter efficiency and overall smaller die area with the same power delivery. However, it requires careful design of the power module to take advantage of all the superior material properties that silicon carbide (SiC) provides over conventional silicon (Si) Insulated Gate Bipolar Transistor (IGBT) based design. This project developed an efficient and densely packed SiC power module for an automotive traction inverter application. Extensive study was performed to select the best performing SiC die considering a wide range of temperature variation, suitability to integrate into target packaging, robust body diode performance and overall high electrical efficiency. Multiple design ideas were explored to achieve lower stray inductance for both power loop and signal loop, uniform current distribution, compact form factor, and very high thermal performance. The final power module package includes all six inverter switches in the same module (six-pack) with die sintered at both bottom and top surfaces utilizing high performance substrate to achieve high electrical and thermal performance. Two power module variants were developed using 900 V and 1200 V devices for operating at two different high voltage levels (> 600 V HV battery). Both power modules were comprehensively characterized, and high efficiency operation of the inverter was confirmed through analysis. Finally, a complete functional inverter was built with the 1200V power modules using other essential components (HV capacitors, gate driver board, controller board, current sensor, connectors etc.) and tested using GM’s standard test procedure. There are several challenges associated with adopting WBG devices for high voltage operation. In order to assess and mitigate those challenges, GM and subrecipients of this project have conducted multiple detailed studies. This includes phase current reconstruction using integrated Rogowski coil, device junction temperature estimation using on-state gate resistance, modeling and testing the effect of high voltage and fast switching on motor insulation and bearings, partial discharge inception voltage measurement under different environmental conditions. Findings of all these studies are summarized in this report.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

p-i-n High-Speed Photodiodes for X-RAY and Infrared Imagers Fabricated by In-Situ -Doped APCVD Germanium Homoepitaxy

Design, simulation, fabrication, and measurement have been performed using a new method for obtaining high-speed p-i-n germanium photodiodes for use in backside imaging arrays. These devices are proof-of-principal in situ-doped vertical mesa structures fabricated using single-wafer, atmospheric-pressure chemical vapor deposition (APCVD) homoepitaxy on Czochralski-grown Ge substrates. Excellent impurity profiles resulting from in situ doping, as measured by spreading-resistance profilometry, were 5 × 10 16 , 2 × 10 15 , and 2 × 10 18 (cm -3 ) for the p-type anode, i-region absorber, and n+ cathode, respectively. Scanning electron microscopy analysis revealed very-low defect densities in the epitaxial layers. The diodes, with diameters ranging 100-500 μm, exhibited excellent ideality (n = 1.15) and less than 1-μA dark current, corresponding to up to 80 kV-cm -1 electric field in the smallest devices. Avalanche breakdown bias was consistently at a magnitude of 50 V or lower. External quantum efficiencies in the near-infrared spectrum peaked at 70%. Pulsed illumination experiments, both in the infrared and X-ray regions, showed pulse rise times in the 100-140 ps range, indicating excellent applicability of this method to high-speed X-ray or infrared applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Analysis of TATB by uHPLC-DAD (V.2.2)

The following procedure describes the method for determining the purity of 1,3,5-triamino 2,4,6-trinitrobenzene (TATB) samples using a High-Performance Liquid Chromatography (HPLC) system fitted with a Diode Array Detector (DAD).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Analysis of TATB by HPLC-DAD (V.1.4)

The following procedure describes the method for determining the purity of 1,3,5-triamino 2,4,6-trinitrobenzene (TATB) samples using a High-Performance Liquid Chromatography (HPLC) system fitted with a Diode Array Detector (DAD). This procedure is also applicable for the detection of some impurities present in TATB.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Improved temperature control for measuring the humidity dependence of aerosol optical properties

Aerosols impact climate and cloud formation by their ability to take up water, which leads to changes in their optical properties. To better characterize the interactions of aerosol with water vapor, a humidification section has been added to the Cavity Attenuation Phase-shift Spectrometry (CAPS) instrument. The CAPS is a diode based method that provides simultaneous measurements of both aerosol total optical extinction and scattering in real-time. We are improving the humidity controlled sample line with new temperature controls. The current system suffers from particlelosses and poorly controlled humidity profiles, both of which were corrected for in the systems redesign. This improved wet-CAPS system has been integrated with a dry-CAPS to simultaneously measure the wet and dry aerosol optical properties. The two CAPS monitors were operated in a dry collection mode to ensure there were no biases between the instruments. Initial calibrations and data were collected to test the functionality of the dual CAPS system (wet + dry). The new two channel CAPS system improves our ability to measure the effects of humidity on aerosol optical properties.

58 GEOSCIENCES↗
DOE OSTI2021

Fielding and analyzing performance of a prototype high voltage output gas switch for Saturn

Timing spread between the thirty-six Saturn modules affects peak electrical power delivered to the Bremsstrahlung diode and can affect vacuum power flow and impedance behavior of the load. To reduce the module spread, a new megavolt gas-insulated closing switch was developed employing design techniques developed for the Z-machine laser triggered switches while retaining Saturn’s simpler electrical triggering. Two modules were temporarily outfitted with the new switches and used separately into local resistive loads (instead of the usual Saturn electron beam load). A reliable operating point and switch time jitter at that point were the goals of the experiments. The target switch reliability is less than one pre-fire in one thousand switch-shots, and a timing standard deviation of 4 nanoseconds. The switches were able to meet both requirements but the number of tests at the chosen point are limited.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Wound Field and Hybrid Synchronous Machines for EV Traction with Brushless Capacitive Rotor Field Excitation (Final Report)

This project focused on the development of wound field synchronous machines (WFSMs) and hybrid excitation synchronous machines (HESMs) with brushless capacitive power transfer for the field excitation. The target application for the machines developed is the main traction motor in electric vehicles. The magnetization in these types of machines is provided by a field winding on the rotor which is excited with DC current. The magnetization level in the machine can be varied by changing the magnitude of the field current. The variable magnetization or field is one of the key features of WFSMs. WFSMs are commonly used as generators however they have several attractive features for automotive traction applications. 1) No use of permanent magnet: Rare earth permanent magnets are primarily mined and processed in China. They have been subject to large price and supply variations and their export may be restricted during times of geopolitical tension. 2) Easy field weakening: Wound field synchronous machines have complete control of their field excitation. With proper design, this type of machine can electromagnetically have an infinite constant power speed range. 3) High power factor: With proper choice of the field excitation, WFSMs may be operated with high or even unity power factor. This potentially allows for the inverter connected to the stator winding to be downsized. In comparison induction machines and interior permanent magnet synchronous machines must supply reactive power to the stator increasing the kVA rating and cost of the inverter. 4) Reduced iron losses at high speed: By reducing the field excitation, the iron loss in the stator can be reduced. This is in comparison to interior permanent magnet synchronous machines which must use stator current to buck or reduce the flux produced by the permanent magnets. Generally, WFSMs have their highest efficiency at high speed. 5) Torque output at high temperatures: The magnetization provided by the field winding only depends on the field current and not on the field winding temperature. This is in contrast to permanent magnet machines where the permanent magnet flux decreases as the magnet temperature increases. Historically a number of approaches have been developed to provide DC current to the rotating field winding in WFSM’s including brushes and slip rings, low frequency brushless exciters, and high frequency rotary transformers and rectifiers. In this project, a different approach was used: brushless capacitive power transfer. Brushless capacitive power transfer uses two sets of rotating capacitors or electrodes in which an AC electric field is established by a high frequency inverter. A displacement current can flow through the airgap in the rotating capacitors which is rectified on the rotor using a diode bridge. The potential advantage of capacitive power transfer is that there is no need for heavy iron to guide magnetic flux. The electric flux lines terminate on the charges on the rotary capacitor surfaces. This should also limit the electric field outside the rotary capacitor airgaps. The main challenge with capacitive power transfer is that the capacitance and surface area of the rotating capacitors is small. Because capacitive power transfer systems are essentially a dual of a magnetic system, an Ampere per Hertz relationship is characteristic versus a Volts per Hertz relationship. A very high frequency power inverter must be used to provide sufficient excitation to the field winding. The concept of using capacitive power transfer to excite a high performance WFSM was initially developed in a previous U.S.A. Dept. of Energy project, DE-EE0006829. This project focused on increasing the power density of the WFSMs and reducing the cost and manufacturing complexity of the capacitive power transfer system. This project has demonstrated that WFSMs with brushless capacitive field power transfer can provide a high-power density and low-cost automotive powertrain technology.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

Double Sided LGAD Design Studies

We summarize TCAD design studies for double sided thick buried layer Low Gain Avalanche Diodes (LGADs). These thick double sided devices introduce new features that require overall optimization. We describe both the parameterized and full process simulation and discuss how the results affect the range of process and LGAD physical parameters.

74 ATOMIC AND MOLECULAR PHYSICS↗