Infrared photomixer diodes
Explore the source record for details and available documents.
SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Explore the source record for details and available documents.
Thermionic converter switch permits chopping in the immediate vicinity of a low-voltage, high current power source, eliminating line losses due to temperature limitations of semiconductor devices.
P-i-n photodiodes incident quantum efficiency and apparent noise input power measurements, considering astronomical photometry applications
Transition metals improve the overall light output and the output in particular regions of the electroluminescent of a silicon carbide semiconductor device. These metals /impurities/ introduce levels that can be pumped electrically and affect the efficiency of the recombination process involved in emission of radiation.
Solid state switches use the same voltage and power supply as the RF amplifier. This simplifies circuit design and reduces input power requirements.
Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.
N-type layer formation with ion implanted nitrogen or Sb in p-type alpha-SiC, evaluating electrical characteristics, discussing junction devices formed
Explore the source record for details and available documents.
Capacitance calculation for diffused p-n junction with exponential doping gradients
Computer acquired performance data from physically vapor deposited tungsten-niobium thermoinic converter
Computer analysis of performance of chemically vapor-deposited tungsten, niobium thermionic converter based on temperatures of emitter, collector and cesium reservoir
Brightness temperatures have been observed from five hohlraums equally spaced on a diameter of a 0.635 cm thermionic emitter surface. The hohlraums are 0.0381 cm in diameter and are 0.114 cm deep. The surface was mounted in a simulated diminiode geometry and was heated from the backside, according to the design, by electron bombardment. Several temperature observations were made at each hohlraum at four different levels of input power. Within experimental error no measurable temperature gradients across the emitter surface were observed at any input power level.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
A description is given of the design approach followed and the results of the analysis leading up to the reference thermionic module designs, both initial and revised. Engineering layout drawing for components of both modules are given. Various steps taken in the component fabrication and the module assembly are detailed.
Explore the source record for details and available documents.
Explore the source record for details and available documents.
Explore the source record for details and available documents.