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All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Surface stability and H adsorption and diffusion near surfaces of W borides: a first-principles study

Abstract Understanding the behavior of tungsten boride (W x B y ) surfaces in a fusion reactor environment is an important topic since boronization is a common wall conditioning method used in fusion Tokamaks. We report the results of density functional theory calculations that investigate the surface stability of W x B y (tetragonal I4 1 /amd -WB, hexagonal P 6 3 / mmc -WB 2 and tetragonal I4/m- W 2 B) with low-index orientations, as well as hydrogen (H) energetics near W x B y surfaces. For single element terminated W x B y surfaces, B terminated surfaces are more energetically stable than W terminated as a result of significant reconstruction of B. The H surface adsorption energy and activation energy of H diffusion penetration below W x B y surfaces are mainly related to the outer termination. Specifically, the WB(001) surface terminated with two B layers, referred to as WB(001)-T BB , has higher H adsorption affinity and lower H diffusivity on this surface than other terminations, which is controlled by the significant charge transfer from B to H. However, B atoms on the WB 2 (0001)-T BB surface decrease both H adsorption and diffusivity on the surface, but enhance H diffusion below the surface in comparison to W terminated WB 2 (0001) surface. H would be trapped and diffuse within atomic surface gaps on the WB 2 ( 2 1 ˉ 1 ˉ 0 ) surface, while H below the surface layer would jump along the [0001] direction rather than diffuse into bulk. The surface diffusion activation energy of H on the W 2 B(001) surface slightly varies with terminations. Once H crosses the surface layer of W 2 B(001) with either termination, it prefers to diffuse into the bulk, or back towards the surface, rather than move parallel to the surface. Interestingly, WB 2 (0001) and WB 2 ( 2 1 ˉ 1 ˉ 0 ) surfaces will have relatively higher H retention than the other W x B y surfaces evaluated in this work.

Yang, L. (ORCID:0000000322166071)↗
DOE OSTI2023

A reduced-turbulence regime in the Large Helical Device upon injection of low-Z materials powders

Abstract Recently an improved confinement regime, characterized by reduced turbulent fluctuations has been observed in the Large Helical Device upon the injection of boron powder into the plasma (Nespoli et al 2022 Nat. Phys. 18 350–56). In this article, we report in more detail the experimental observations of increased plasma temperature and the decrease of turbulent fluctuations across the plasma cross section, on an extended database. In particular, we compare powders of different materials (B, C, BN), finding similar temperature improvement and turbulence response for the three cases. Modeling of the powder penetration into the plasma and of neoclassical electric field and fluxes support the interpretation of the experimental results. Additionally, we report evidence of the temperature improvement increasing with powder injection rates and decreasing for both increasing density and heating power. Though, plasma turbulence response varies depending on the initial conditions of the plasma, making it difficult to draw an inclusive description of the phenomenon.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Turbulence-reduced high-performance scenarios in Wendelstein 7-X

In the Wendelstein 7-X (W7-X) stellarator, turbulence is the dominant transport mechanism in most discharges. This leads to a 'clamping' of ion temperature over a wide range of heating power, predominantly flat density profiles where hollow profiles driven by neoclassical thermo-diffusion would be expected and by rapid impurity transport in injection experiments. Significantly reduced turbulent transport is observed in the presence of strong core density gradients found transiently after core pellet injection and irregularly after boronisation or boron pellet injection. Density peaking is also achieved in a controlled manner in purely neutral beam heated discharges where particle transport analysis reveals an abrupt reduction in the main-ion particle flux leading to significant density profile peaking not explained by the NBI particle source alone. The plasmas exhibit a heat diffusivity of around $\chi = 0.25 \pm 0.1\,\mathrm{m}^2\ \mathrm{s}^{-1}$ at mid radius, a factor of around 4 lower than ECRH dominated discharges. Despite the improved confinement, the achieved ion temperature is limited by broader heat deposition and the lower power-per-particle given the higher density. This is overcome with limited reintroduction of ECRH power, where the low heat diffusivity diffusivity is maintained, the density rise supressed and ion temperatures above the clamping limit are achieved. The applicability of these plasmas for a high performance scenario on transport relevant time scales is assessed, including initial predictions for planned heating upgrades of W7-X, based on a range of assumptions about particle transport.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Operational space for lower hybrid heating scenarios in the full tungsten environment of WEST

In tungsten—W—Environment in Steady-state Tokamak (WEST), the lower hybrid current drive (LHCD) system is key for achieving long pulse operation by providing most of the non-inductive plasma current, as well as a crucial source of electron heating. Therefore, determining the operational space for its application is fundamental. In the present study, the LHCD operational space is deeply analyzed for 0.5 MA pulses. This space is bounded by three limits: (i) the ratio of the LHCD power over density must be above a threshold to compensate tungsten radiation with enough core heating, (ii) the line-averaged density must be high enough to allow good coupling of the hybrid wave with the plasma, and (iii) fast electron ripple losses must be below a limit to avoid reaching a thermal threshold on plasma-facing components. If the tungsten radiation peak or burn-through phase is not safely overcome, a maximum electron temperature of 1.5 keV is obtained, confinement is degraded, and magnetohydrodynamic activity is frequently triggered, potentially causing a disruption. From experimental measurements and interpretative simulations, we highlight the main mechanisms that prevent the plasma from heating up during LHCD power ramp-up. Three parameters play a major role: plasma density, tungsten concentration and LHCD power deposition. A strategy to overcome this limitation is found: a precise density ramp-up performed simultaneously with the increase in LHCD power. Additionally, we show that boronization greatly facilitates the burn-through of tungsten by lowering its content during the heating phase. Finally, taking into account the three constraints given above, the LHCD operational space is determined at power ramp-up and during constant heating phases.

lower hybrid heating and current drive↗
DOE OSTI2025

Fuel recycling and impurity characteristics in long-pulse H-mode plasmas with full metal and dynamically coated walls on EAST

We report the basic behaviors of fuel recycling and impurity accumulation during >100 s long-pulse H-mode plasma under full metal wall conditions on EAST. Significant fuel recycling and impurity rising, particularly from heavy impurities, have been observed when operating with a bare metal wall or a deteriorate real-time coated wall, which severely limits the duration of H-mode discharges. To address this issue, a novel dynamic wall coating technique combining feedforward and feedback controls has been successfully developed. The feedforward control presets the Li powder injection rate based on prior experimental observations, whereas the feedback control dynamically modulates the Li injection rate in response to real-time Li-II line emission measurements. Using this approach, a 605 s H-mode plasma has been achieved with fuel recycling and impurity level maintained stable. This result extends the previous record of a 403 s long-pulse H-mode plasma Gong et al (2024 Nucl. Fusion 64 112013) by over 200 s. It demonstrates the effectiveness of the dynamic powder injection technique in controlling fuel recycling and impurities accumulation, while prolonging plasma duration. These findings offer valuable insights into potential applications of other low-Z powder, such as boron, in ITER.

fuel recycling↗
DOE OSTI2026

Overview of the KSTAR experiments and future plan

The Korea Superconducting Tokamak Advanced Research (KSTAR) device has recently entered a new phase of operation following the installation of a tungsten mono-block divertor, providing a unique platform to investigate high-performance, long-pulse plasma scenarios for future reactors. The 2023–2024 experimental campaigns demonstrated significant progress in commissioning the tungsten divertor, developing plasma operation scenarios, and achieving real-time control. Comparative studies revealed increased core radiation losses and associated performance degradation relative to the carbon divertor environment. Alleviation strategies, such as optimized neutral beam injection timing, boron powder seeding, and impurity control through gas puffing, were shown to reduce tungsten accumulation and extend high-performance phases, including record H-mode operation exceeding 100 s. International collaboration enabled the first demonstration of high poloidal beta scenarios with an internal transport barrier on KSTAR. Advances in control included upgraded real-time resonant magnetic perturbation schemes and disruption forecasting. Furthermore, divertor detachment control using a new surrogate-model-based approach with real-time radiation imaging demonstrated active impurity and heat flux management. Supported by enhanced heating, current drive, and diagnostic systems, these achievements offer valuable insights into tungsten impurity behavior, transport physics, and control strategies for future reactors including ITER. Planned upgrades toward a full-tungsten wall and ITER-aligned real-time plasma control will further establish KSTAR as a leading experimental platform for developing operational scenarios required to achieve steady-state, burning plasma conditions.

KSTAR↗
DOE OSTI2020

Strongly adhesive dry transfer technique for van der Waals heterostructure

That one can stack van der Waals materials with atomically sharp interfaces has provided a new material platform of constructing heterostructures. The technical challenge of mechanical stacking is picking up the exfoliated atomically thin materials after mechanical exfoliation without chemical and mechanical degradation. Chemically inert hexagonal boron nitride (hBN) has been widely used for encapsulating and picking up vdW materials. However, due to the relatively weak adhesion of hBN, assembling vdW heterostructures based on hBN has been limited. Here, we report a new dry transfer technique. We used two vdW semiconductors (ZnPS 3 and CrPS 4 ) to pick up and encapsulate layers for vdW heterostructures, which otherwise are known to be hard to fabricate. By combining with optimized polycaprolactone (PCL) providing strong adhesion, we demonstrated various vertical heterostructure devices, including quasi-2D superconducting NbSe 2 Josephson junctions with atomically clean interface. The versatility of the PCL-based vdW stacking method provides a new route for assembling complex 2D vdW materials without interfacial degradation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A multiscale insight into the growth of h-BN: effect of the enclosure

Abstract There is a lack of knowledge on the fundamental growth mechanisms governing the characteristics of 2D materials synthesized by the chemical vapor deposition (CVD) technique and their correlation with experimentally controllable parameters, which hindered their wafer-scale synthesis. Here, we pursued an analytical and computational approach to access the system states that are not experimentally viable to address these critical needs. We developed a multiscale computational framework correlating the macroscale heat and mass flow with the mesoscale morphology of the as-grown 2D materials by solving the coupled system of heat/mass transfer and phase-field equations. We used hexagonal boron nitride (h-BN) as our model material and investigated the effect of substrate enclosure on its growth kinetics and final morphology. We revealed a lower concentration with a more uniform distribution on the substrate in an enclosed-growth than open-growth. It leads to a more uniform size distribution of the h-BN islands, consistent with existing experimental investigations.

Materials Science↗
DOE OSTI2022

Thickness-dependent phase transition kinetics in lithium-intercalated MoS 2

The phase transitions of two-dimensional (2D) materials are key to the operation of many devices with applications including energy storage and low power electronics. Nanoscale confinement in the form of reduced thickness can modulate the phase transitions of 2D materials both in their thermodynamics and kinetics. Here, using in situ Raman spectroscopy we demonstrate that reducing the thickness of MoS 2 below five layers slows the kinetics of the phase transition from 2H- to 1T'-MoS 2 induced by the electrochemical intercalation of lithium. In this study, we observe that the growth rate of 1T' domains is suppressed in thin MoS 2 supported by SiO 2 , and attribute this growth suppression to increased interfacial effects as the thickness is reduced below 5 nm. In this study, the suppressed kinetics can be reversed by placing MoS 2 on a 2D hexagonal boron nitride ( h BN) support, which readily facilitates the release of strain induced by the phase transition. Additionally, we show that the irreversible conversion of intercalated 1T'-MoS 2 into Li2S and Mo is also thickness-dependent and the stability of 1T'-MoS 2 is significantly increased below five layers, requiring a much higher applied electrochemical potential to break down 1T'-MoS 2 into Li 2 S and Mo nanoclusters.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Observation of well-defined Kohn-anomaly in high-quality graphene devices at room temperature

Abstract Due to its ultra-thin nature, the study of graphene quantum optoelectronics, like gate-dependent graphene Raman properties, is obscured by interactions with substrates and surroundings. For instance, the use of doped silicon with a capping thermal oxide layer limited the observation to low temperatures of a well-defined Kohn-anomaly behavior, related to the breakdown of the adiabatic Born–Oppenheimer approximation. Here, we design an optoelectronic device consisting of single-layer graphene electrically contacted with thin graphite leads, seated on an atomically flat hexagonal boron nitride substrate and gated with an ultra-thin gold layer. We show that this device is optically transparent, has no background optical peaks and photoluminescence from the device components, and no generation of laser-induced electrostatic doping (photodoping). This allows for room-temperature gate-dependent Raman spectroscopy effects that have only been observed at cryogenic temperatures so far, above all the Kohn-anomaly phonon energy normalization. The new device architecture, by decoupling graphene optoelectronic properties from the substrate effects, allows for observing quantum phenomena at room temperature.

Materials Science↗
DOE OSTI2023

Effect of environmental screening and strain on optoelectronic properties of two-dimensional quantum defects

Point defects in hexagonal boron nitride (hBN) are promising candidates as single-photon emitters (SPEs) in nanophotonics and quantum information applications. The precise control of SPEs requires in-depth understanding of their optoelectronic properties. However, how the surrounding environment of host materials, including the number of layers, substrates, and strain, influences SPEs has not been fully understood. Here, in this work, we study the dielectric screening effect due to the number of layers and substrates, and the strain effect on the optical properties of carbon dimer and nitrogen vacancy defects in hBN from first-principles many-body perturbation theory. We report that environmental screening causes a lowering of the quasiparticle gap and exciton binding energy, leading to nearly constant optical excitation energy and exciton radiative lifetime. We explain the results with an analytical model starting from the Bethe–Salpeter equation Hamiltonian with Wannier basis. We also show that optical properties of quantum defects are largely tunable by strain with highly anisotropic response, in good agreement with experimental measurements. Our work clarifies the effect of environmental screening and strain on optoelectronic properties of quantum defects in two-dimensional insulators, facilitating future applications of SPEs and spin qubits in low-dimensional systems.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Generation of out-of-plane ferroelectric behavior in a one-atom-thick monolayer

Ferroelectricity with out-of-plane polarization has so far been found in several two-dimensional (2D) materials, including monolayers comprising three to five planes of atoms, e.g. α-In 2 Se 3 and MoTe 2 . Here, we explore the generation of out-of-plane polarization within a one-atom-thick monolayer material, namely hexagonal boron nitride. We performed density-functional-theory calculations to explore inducing ferroelectric-like distortions through incorporation of isovalent substitutional impurities that are larger than the host atoms. This disparity in bond lengths causes a buckling of the h-BN, either up or down, which amounts to a dipole with two equivalent energies and opposing orientations. We tested several impurities to explore the magnitude of the induced dipole and the switching energy barrier for dipole inversion. The effects of strain, dipole–dipole interactions, and vertical heterostructures with graphene are further explored. Our results suggest a highly-tunable system with ground state antiferroelectricity and metastable ferroelectricity. Finally, we expect that this work will help foster new ways to include functionality in layered 2D-material-based applications.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Restoration of weak localization in bilayer graphene by a molecular thin film

Quantum coherent effects can be probed in multilayer graphene through electronic transport measurements at low temperatures. In particular, bilayer graphene (BLG) is known to be susceptible to quantum interference corrections of the conductivity, presenting weak localization at all electronic densities, and dependent on different scattering mechanisms such as those related to the trigonal warping of the electron dispersion near the K and K′ valleys. Proximity effects with a molecular thin film influence these scattering mechanisms, which can be quantified through the known theory of magnetoconductance for BLG. Here, we present electronic transport measurements in a copper-phthalocyanine (CuPc) / BLG / hexagonal boron nitride (h-BN) heterostructure that suggest the restoration of weak localization in BLG, associated to a reduction of trigonal warping effects, that are known to suppress weak localization in BLG. Additionally, we observe a charge transfer of 3.6×10 12 cm −2 from the BLG to the molecules, as well as a very small degradation of the mobility of the BLG/h-BN heterostructure upon the deposition of CuPc. The molecular arrangement of the CuPc thin film is characterized in a control sample through transmission electron microscopy, that we relate to the electronic transport results.

bilayer graphene↗
DOE OSTI2025

Few-mode and anisotropic quantum transport in InSb nanoribbons using an all-van der Waals material-based gate

High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when two-dimensional van der Waals (vdW) materials are gated exclusively by other vdW materials, we have developed a method for gating non-vdW materials with an all-vdW gate stack, consisting of a hexagonal boron nitride dielectric layer and a few-layer graphite gate electrode. We demonstrate this gating approach on MOVPE-grown InSb nanoribbons (NRs), a novel variant of the InSb nanowire, with a flattened cross-section. In our all-vdW gated NR devices we observe conductance features that are reproducible and have low- to near-zero gate hysteresis. We also report quantized conductance, which persists to lower magnetic fields and longer channel lengths than typical InSb nanowire devices reported to date. Additionally, we observe level splitting that is highly anisotropic in an applied magnetic field, which we attribute to the ribbon cross-section. The performance of our devices is consistent with the reduced disorder expected from the all-vdW gating scheme, and marks the first report of ballistic, few-modes quantum transport in a non-vdW material with an all-vdW gate. Our results establish all-vdW gating as a promising approach for high-quality gating of non-vdW materials for quantum transport, which is in principle applicable generically, beyond InSb systems. In addition, the work showcases the specific potential of all-vdW gate/InSb NR devices for enabling clean quantum devices that may be relevant for spintronics and topological superconductivity studies.

InSb↗
DOE OSTI2023

Galactosylation of xyloglucan is essential for the stabilization of the actin cytoskeleton and endomembrane system through the proper assembly of cell walls

Abstract Xyloglucan, a major hemicellulose, interacts with cellulose and pectin to assemble primary cell walls in plants. Loss of the xyloglucan galactosyltransferase MURUS3 (MUR3) leads to the deficiency of galactosylated xyloglucan and perturbs plant growth. However, it is unclear whether defects in xyloglucan galactosylation influence the synthesis of other wall polysaccharides, cell wall integrity, cytoskeleton behaviour, and endomembrane homeostasis. Here, we found that in mur3-7 etiolated seedlings cellulose was reduced, CELLULOSE SYNTHASE (CESA) genes were down-regulated, the density and mobility of cellulose synthase complexes (CSCs) were decreased, and cellulose microfibrils become discontinuous. Pectin, rhamnogalacturonan II (RGII), and boron contents were reduced in mur3-7 plants, and B-RGII cross-linking was abnormal. Wall porosity and thickness were significantly increased in mur3-7 seedlings. Endomembrane aggregation was also apparent in the mur3-7 mutant. Furthermore, mutant seedlings and their actin filaments were more sensitive to Latrunculin A (LatA) treatment. However, all defects in mur3-7 mutants were substantially restored by exogenous boric acid application. Our study reveals the importance of MUR3-mediated xyloglucan galactosylation for cell wall structural assembly and homeostasis, which is required for the stabilization of the actin cytoskeleton and the endomembrane system.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2024

Single Electron Self-coherence and Its Wave/Particle Duality in the Electron Microscope

Intensities in high-resolution phase-contrast images from electron microscopes build up discretely in time by detecting single electrons. A wave description of pulse-like coherent-inelastic interaction of an electron with matter implies a time-dependent coexistence of coherent partial waves. Their superposition forms a wave package by phase decoherence of 0.5 - 1 radian with Heisenbergs energy uncertainty ΔE H = $\hbar$/2 Δt -1 matching the energy loss ΔE of a coherent-inelastic interaction and sets the interaction time Δt. In these circumstances, the product of Planck's constant and the speed of light hc is given by the product of the expression for temporal coherence λ 2 /Δλ and the energy loss ΔE. Experimentally, the self-coherence length was measured by detecting the energy-dependent localization of scattered, plane matter waves in surface proximity exploiting the Goos–Hänchen shift. Chromatic-aberration Cc-corrected electron microscopy on boron nitride (BN) proves that the coherent crystal illumination and phase contrast are lost if the self-coherence length shrinks below the size of the crystal unit cell at ΔE > 200 eV. Finally, in perspective, the interaction time of any matter wave compares with the lifetime of a virtual particle of any elemental interaction, suggesting the present concept of coherent-inelastic interactions of matter waves might be generalizable.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Neutral but Impactful: Gallium Cluster-Induced Nanopores from Beam-Blanked Gallium Ion Sources

Neutral atoms originating from liquid metal ion sources are an often-overlooked source of contamination and damage in focused ion beam microscopy. Beyond ions and single atoms, these sources also generate atom clusters. While most studies have investigated charged clusters, here we demonstrate that neutral clusters are also formed. These neutral clusters bypass the electrostatic beam blanking system, allowing them to impinge on samples even when the ion beam is blanked. We investigate this phenomenon using thin (≤20 nm) freestanding membranes of hexagonal boron nitride, silicon, and silicon nitride as targets. Randomly dispersed nanopores that form upon neutral cluster exposure are revealed. The average nanopore diameter is ∼2 nm with a narrow size distribution, suggesting that the atom clusters have a preferred size. Various electron microscopy techniques are used to characterize the nanopores, including high-resolution transmission electron microscopy, multislice ptychography, and electron energy-loss spectroscopy. Finally, we show how electron irradiation in the transmission electron microscope can be used to both remove any amorphous material that may clog the pores and to controllably grow the pores to specific sizes. Tunable nanopores such as these are interesting for nanofluidic applications requiring size-selective membranes.

Byrne, Dana O↗
DOE OSTI2026

Interlayer Exciton Condensates between Second Landau Level Orbitals in Double Bilayer Graphene

Here, we present Coulomb-drag measurements on a heterostructure comprising two Bernal-stacked bilayer graphene (BLG) sheets separated by a 2.5 nm hexagonal boron nitride (hBN) spacer in the quantum Hall (QH) regime. Using top and bottom gate control, together with an interlayer bias, we independently tune the two BLG layers into either the lowest (N = 0) or second (N = 1) Landau level (LL) orbital and probe their interlayer QH states. When both layers occupy the N = 0 orbital, we observe both interlayer exciton condensates (ECs) at integer total filling and interlayer fractional QH states, echoing the results in double monolayer graphene. In contrast to previous studies, however, when both BLG layers occupy the N = 1 orbital, we also observe quantized drag signals, signifying an interlayer exciton condensate formed between the second LLs. By tuning the layer degree of freedom, we find that this N = 1 EC state arises only when the N = 1 wave function in each BLG is polarized toward the hBN interface to maximize the interlayer Coulomb interaction.

Electrical conductivity↗