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Direct synthesis of delaminated layered zeolitic materials aims to synthesize confined catalysts for reactions involving sterically bulky reactants, which are too large to benefit from conventional three-dimensional confinement in micropores.
Glass-crystallisation synthesis is harnessed to probe structure prediction in a search for new inorganic compounds, yielding a new ribbon silicate Sr 2 Si 3 O 8 .
Kinetic modeling of Guerbet coupling chemistry over a CuMgAlO x catalyst is presented. Integration of the model in a process simulation enables assessing a recycling strategy to optimize the production of diesel fuel precursors.
Higher harmonic cavities (HHCs), also known as Landau cavities, have been proposed to increase the beam lifetime and Landau damping by lengthening the bunch and increasing the synchrotron tune spread. Here, we present an optimized 1.5 GHz normal conducting HHC design for the Advanced Light Source Upgrade project at Lawrence Berkeley National Lab with a superconducting-like geometry for lower R/Q. The optimization goal is to reach the required shunt impedance while maintaining a relatively high Q value of the cavities. A multi-objective genetic algorithm (MOGA)-based optimization process is applied to optimize the radio frequency (RF) design. This study serves as an example of how a genetic algorithm can be used to optimize RF cavities. Detailed exploration and characterization of the MOGA-based RF cavity optimization have been demonstrated from the aspects of minimizing the coupled bunch instabilities and analyzing the higher-order modes and the corresponding impedance of the HHC.
© 2020 Author(s). We have investigated magnesium aluminum ferrite thin films with a range of iron concentrations and identified the optimal iron content to obtain high crystalline quality thin films with the low magnetic damping required for spin current-based applications. Epitaxial MgAl 2-x FexO4 films with 0.8 < x < 2.0 were grown by pulsed laser deposition on single crystal MgAl2O4 substrates and were characterized structurally and magnetically. We find that the x = 1.5 composition minimizes the room-temperature magnetic damping with a typical Gilbert damping parameter of α eff = 1.8 × 10-3. This minimized damping is governed by a competition between the more robust magnetic ordering with increased iron content, x, and the more defective structure due to larger film-substrate lattice mismatch with increased iron content. The temperature-dependent magnetization curves indicate that Tc is suppressed below room temperature for iron content x ≤ 1.2 and eventually suppressed entirely for x = 0.8. X-ray magnetic circular dichroism results indicate that for all x the magnetic moment is dominated by Fe 3 + cations distributed in a 60:40 ratio on the octahedral and tetrahedral sites, with minimal contribution from Fe 2 + cations. Films with x = 1.4-1.6 exhibit very strong ferromagnetic resonance and low Gilbert damping with α eff = (1.8-6) × 10-3, making them ideal candidates for microwave and spintronic applications.
We calculate the alloy-disorder-limited electron mobility of AlxGa1−xN from first principles. AlxGa1−xN is a technologically important ultra-wide-bandgap alloy with promise in light emitting diodes and high-power transistors. Alloying introduces statistical disorder, which causes electrons to scatter between different crystal-momentum states, leading to a reduction in mobility for intermediate alloy compositions. The corresponding lifetime, which appears as an energy broadening in the band structure, can be evaluated by unfolding the band structure from the supercell basis to the primitive-cell basis. We fit the first-principles band broadening with a model scattering potential and evaluate the low-field electron mobility using the semiclassical Boltzmann transport equation in the relaxation-time approximation. Our calculated mobility is in agreement with experimental values. We also find the lowest alloy-scattering electron mobility (total electron mobility) across the entire composition range to be 186 cm2/V s (136 cm2/V s), which is comparable to the highest electron mobility predicted in the competitor system, β-(AlxGa1−x)2O3. Our results elucidate the intrinsic limits imposed by alloy disorder on electron transport in AlxGa1−xN.
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We report on the low-frequency electronic noise in β-(AlxGa1−x)2O3 Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10−12 cm2/Hz (f = 10 Hz) at 1 A/cm2 current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier and, correspondingly, impact the electric current. The obtained results help in understanding the noise in Schottky barrier diodes made of ultra-wide bandgap semiconductors and can be used for the material and device quality assessment.
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The Savannah River National Laboratory (SRNL) has evaluated several options for the disposition of stainless-steel clad plutonium metal alloy. One of the technologies under consideration is alloying of the material with stainless steel (SS). The resulting SS-Pu alloy would be a non-proliferable waste form consisting of a secondary Pu composition region microencapsulated in the refractory stainless steel. Two 8-kg ingots were made at SS-1.8Zr-0.4Pu alloys (wt %); 8 kg was determined in a previous study to be the maximum mass of SS ingot at the maximum target Pu loading of 350-g that would result in a SS-4.4Pu alloy (wt %). Two smaller 500-g ingots were also produced at SS-1.6Zr-1.4Pu and SS-1.4Pu (wt %). The 500-g ingots evaluated alloying at a higher Pu concentration than in the 8 kg ingots, and they evaluated the necessity of adding Zr metal to incorporate the Pu and control Pu oxidation. Zr addition was found to be unnecessary to incorporate the Pu and control Pu oxidation. Drill turnings were collected from the large and small ingots and metallographic samples were directly cut from the small ingots. Both were analyzed to validate the structure and composition region formation. Chemical analyses of turnings proved that the Pu was dispersed within the SS ingots.
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We report on a measurement of several n = 3 → n = 2 inner-shell transitions in sodiumlike, magnesiumlike, and aluminumlike europium, performed at the EBIT-I electron beam ion trap facility at the Lawrence Livermore National Laboratory using an x-ray calorimeter. Although the inner-shell x-ray lines of such M-shell ions are typically dominated by electric dipole allowed transitions, we have also identified a weak feature that appears to be the result of electric quadrupole decay in sodiumlike Eu 52+ . Here, we compare the measured transitions energies to the calculated values obtained using the flexible atomic code. We find agreement in most cases within 2 eV or better.
Atomically precise ultradoping of silicon is possible with atomic resists, area-selective surface chemistry, and a limited set of hydride and halide precursor molecules, in a process known as atomic precision advanced manufacturing (APAM). It is desirable to expand this set of precursors to include dopants with organic functional groups and in this work we consider aluminium alkyls, to expand the applicability of APAM. We explore the impurity content and selectivity that results from using trimethyl aluminium and triethyl aluminium precursors on Si(001) to ultradope with aluminium through a hydrogen mask. Comparison of the methylated and ethylated precursors helps us understand the impact of hydrocarbon ligand selection on incorporation surface chemistry. Combining scanning tunneling microscopy and density functional theory calculations, we assess the limitations of both classes of precursor and extract general principles relevant to each.