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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Making Cubic Silicon Carbide Semiconductors

Thin buffer layer of SiC minimizes effects of lattice mismatch. Approach consists of growing single-crystal layer of cubic SiC on single-crystal silicon (Si) wafer by chemical-vapor deposition (CVD). Process developed for production of large-area single-crystal wafers of cubic silicon carbide (SiC) for semiconductor devices; also used to make devices themselves. Applications include electronics for high temperature (up to 900 C) and electronics for very high frequencies.

Powell, J.↗
NASA NTRS2012

Silicon Carbide Nanotube Oxidation at High Temperatures

Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

Ahlborg, Nadia↗
NASA NTRS1995

Silicon Detector Studies with an Interferometric Thickness Mapper

Cosmic ray isotopic composition studies aboard satellites are normally based on energy detection measurements which require a precise knowledge of matter thickness particle penetration. A laser- interferometer system has been developed to precisely map the thick- ness variations of large-area silicon detectors. Design, operation, and the data processing to derive thickness maps is described.

Cosmic Rays Silicon Detectors Interferometry Satel↗
DOE OSTI2017

Life Cycle Inventory of Current Photovoltaic Module Recycling Processes in Europe

Solar photovoltaic (PV) installations must be properly dismantled and any waste treated and disposed at the end of project life. However, because most of the world's nearly 400 GW of PV systems have been built in the past decade - each expected to operate for between 20 and 30 years - current PV module waste volumes do not yet justify widespread operation of PV recycling facilities. The necessary policies and technologies for recycling PV systems are currently under rapid development. With modifications to the European waste electrical and electronic equipment directive (WEEE 2012/19/EU) in 2012, take back and recycling of PV modules is, in fact, already mandatory in Europe. There, take back and recycling is currently performed in small but annually-increasing quantities. Even though waste treatment is considered part of a module's life cycle, only a few life cycle inventories (LCI) of energy and materials flows are available for the industrial recycling processes that are used today to recycle crystalline silicon-based (c-Si) PV modules. LCI are the data inputs that inform lifecycle assessments which quantify the environmental impacts across the full life cycle of PV modules - from manufacturing and use to end of life. To help progress the industry forward, a survey of European recyclers was performed to characterize existing commercial recycling processes and share associated life cycle inventory data. System Boundaries: The reference unit, or "functional unit" in the vocabulary of life cycle assessment, is defined as the processing of one metric ton of crystalline silicon PV modules in recycling lines for laminated glass, metals, and electronic wastes. Today, all modules are processed in discrete batches, yet not metered at that scale. Thus the process energy for a batch is estimated based on scaled annual production data as well as on input and output streams.

14 SOLAR ENERGY↗
NASA NTRS2013

Silicon Micromachining for Terahertz Component Development

Waveguide component technology at terahertz frequencies has come of age in recent years. Essential components such as ortho-mode transducers (OMT), quadrature hybrids, filters, and others for high performance system development were either impossible to build or too difficult to fabricate with traditional machining techniques. With micromachining of silicon wafers coated with sputtered gold it is now possible to fabricate and test these waveguide components. Using a highly optimized Deep Reactive Ion Etching (DRIE) process, we are now able to fabricate silicon micromachined waveguide structures working beyond 1 THz. In this paper, we describe in detail our approach of design, fabrication, and measurement of silicon micromachined waveguide components and report the results of a 1 THz canonical E-plane filter.

Filter↗
NASA NTRS2007

Materials Development for Auxiliary Components for Large Compact Mo/Au TES Arrays

We describe our current fabrication process for arrays of superconducting transition edge sensor microcalorimeters, which incorporates superconducting Mo/Au bilayers and micromachined silicon structures. We focus on materials and integration methods for array heatsinking with our bilayer and micromachining processes. The thin superconducting molybdenum bottom layer strongly influences the superconducting behavior and overall film characteristics of our molybdenum/gold transition-edge sensors (TES). Concurrent with our successful TES microcalorimeter array development, we have started to investigate the thin film properties of molybdenum monolayers within a given phase space of several important process parameters. The monolayers are sputtered or electron-beam deposited exclusively on LPCVD silicon nitride coated silicon wafers. In our current bilayer process, molybdenum is electron-beam deposited at high wafer temperatures in excess of 500 degrees C. Identifying process parameters that yield high quality bilayers at a significantly lower temperature will increase options for incorporating process-sensitive auxiliary array components (AAC) such as array heat sinking and electrical interconnects into our overall device process. We are currently developing two competing technical approaches for heat sinking large compact TES microcalorimeter arrays. Our efforts to improve array heat sinking and mitigate thermal cross-talk between pixels include copper backside deposition on completed device chips and copper-filled micro-trenches surface-machined into wafers. In addition, we fabricated prototypes of copper through-wafer microvias as a potential way to read out the arrays. We present an overview on the results of our molybdenum monolayer study and its implications concerning our device fabrication. We discuss the design, fabrication process, and recent test results of our AAC development.

Finkbeiner, F. m.↗
NASA NTRS1986

High-efficiency silicon solar cells - Development, current issues and future directions

This paper provides a review of material, process, and design considerations that are essential for achieving high-efficiency silicon solar cells. It describes an approach that resulted in 18.0-18.5-percent-efficient cells on low-resistivity float-zone silicon material. It is shown experimentally that a combination of surface passivation and double-layer antireflection coating can provide 2-3 percent (absolute) improvement in cell efficiency provided the material, process and cell design are carefully selected.

Rohatgi, A.↗
DOE OSTI2016

Transcript level coordination of carbon pathways during silicon starvation-induced lipid accumulation in the diatom Thalassiosira pseudonana

Diatoms are one of the most productive and successful photosynthetic taxa on Earth and possess attributes such as rapid growth rates and production of lipids, making them candidate sources of renewable fuels. Despite their significance, few details of the mechanisms used to regulate growth and carbon metabolism are currently known, hindering metabolic engineering approaches to enhance productivity. To characterize the transcript level component of metabolic regulation, genome-wide changes in transcript abundance were documented in the model diatom Thalassiosira pseudonana on a time-course of silicon starvation. Growth, cell cycle progression, chloroplast replication, fatty acid composition, pigmentation, and photosynthetic parameters were characterized alongside lipid accumulation. Extensive coordination of large suites of genes was observed, highlighting the existence of clusters of coregulated genes as a key feature of global gene regulation in T. pseudonana. The identity of key enzymes for carbon metabolic pathway inputs (photosynthesis) and outputs (growth and storage) reveals these clusters are organized to synchronize these processes. Coordinated transcript level responses to silicon starvation are probably driven by signals linked to cell cycle progression and shifts in photophysiology. A mechanistic understanding of how this is accomplished will aid efforts to engineer metabolism for development of algal-derived biofuels.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1986

Process research and development

The following major processes involved in the production of crystalline-silicon solar cells were discussed: surface preparation, junction formation, metallization, and assembly. The status of each of these processes, and the sequence in which these processes are applied, were described as they were in 1975, as they were in 1985, and what they might be in the future.

Bickler, D. B.↗
NASA NTRS1970

Technique for depositing silicon dioxide on indium arsenide improves adhesion

Planar array processing of indium arsenide wafers includes dicing into a prescribed geometry, then cleaning and drying, and finally pre-oxidizing in an oxygen atmosphere at 500 degrees C. The last step forms an oxide interface between the InAs surface and a glow discharge deposited layer of silicon dioxide.

Source record↗
NASA NTRS1979

Development of pulsed processes for the manufacture of solar cells

Low-energy ion implantation processes for the automated production of silicon solar cells were investigated. Phosphorus ions at an energy of 10 keV and dose of 2 x 10 to the 15th power/sq cm were implanted in silicon solar cells to produce junctions, while boron ions at 25 keV and 5 x 10 to the 15th power were implanted in the cells to produce effective back surface fields. An ion implantation facility with a beam current up to 4 mA and a production throughput of 300 wafers per hour was designed and installed. A design was prepared for a 100 mA, automated implanter with a production capacity of 100 MW sub e/sq cm per year. Two process sequences were developed which employ ion implantation and furnace or pulse annealing. A computer program was used to determine costs for junction formation by ion implantation and various furnace annealing cycles to demonstrate cost effectiveness of these methods.

Minnucci, J. A.↗
NASA NTRS1977

Integral glass encapsulation for solar arrays

Electrostatic bonding has been used to join silicon solar cells to borosilicate glass without the aid of any organic binders or adhesives. The results of this investigation have been to demonstrate, without question, the feasibility of this process as an encapsulation technique. The potential of ESB for terrestrial solar arrays was clearly shown. The process is fast, reproducible, and produces a permanent bond between glass and silicon that is stronger than the silicon itself. Since this process is a glass sealing technique requiring no organics it makes moisture tight sealing of solar cells possible.

Young, P. R.↗
NASA NTRS2006

Lightweight optical mirrors formed in single crystal substrate

This invention is directed to a process for manufacturing a lightweight mirror from a single crystal material, such as single crystal silicon. As a near perfect single crystal material, single crystal silicon has much lower internal stress than a conventional material. This means much less distortion of the optical surface during the light weighting process. After being ground and polished, a single crystal silicon mirror is light weighted by removing material from the back side using ultrasonic machining. After the light weighting process, the single crystal silicon mirror may be used as-is or further figured by conventional polishing or ion milling, depending on the application and the operating wavelength.

Bly, Vincent T.↗
NASA NTRS1991

Solar cells for lunar applications by vacuum evaporation of lunar regolith materials

The National Space Exploration Initiative, specifically the Lunar component, has major requirements for technology development of critical systems, one of which is electrical power. The availability of significant electrical power on the surface of the Moon is a principal driver defining the complexity of the lunar base. Proposals to generate power on the Moon include both nuclear and solar (photovoltaic) systems. A more efficient approach is to attempt utilization of the existing lunar resources to generate the power systems. Synergism may occur from the fact that there have already been lunar materials processing techniques proposed for the extraction of oxygen that would have, as by-products, materials that could be specifically used to generate solar cells. The lunar environment is a vacuum with pressures generally in the 1 x 10(exp -10) torr range. Such conditions provide an ideal environment for direct vacuum deposition of thin film solar cells using the waste silicon, iron, and TiO2 available from the lunar regolith processing meant to extract oxygen. It is proposed, therefore, to grow by vacuum deposition, thin film silicon solar cells from the improved regolith processing by-products.

Ignatiev, Alex↗
NASA NTRS1980

Development of megasonic cleaning for silicon wafers

A cleaning and drying system for processing at least 2500 three in. diameter wafers per hour was developed with a reduction in process cost. The system consists of an ammonia hydrogen peroxide bath in which both surfaces of 3/32 in. spaced, ion implanted wafers are cleaned in quartz carriers moved on a belt past two pairs of megasonic transducers. The wafers are dried in the novel room temperature, high velocity air dryer in the same carriers used for annealing. A new laser scanner was used effectively to monitor the cleaning ability on a sampling basis.

Mayer, A.↗
NASA NTRS1985

Advanced detectors and signal processing for bubble memories

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Kryder, M. H.↗