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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Entanglement of microwave-optical modes in a strongly coupled electro-optomechanical system

Quantum transduction between microwaves and optics can be realized by quantum teleportation if given reliable microwave-optical entanglement, namely, entanglement-based quantum transduction. To realize this protocol, an entangled source with a high fidelity between the two frequencies is necessary. Here, we study microwave and optical entanglement generation based on a generic cavity electro-optomechanical system in the strong coupling regime. Splittings are shown in the microwave and optical output spectra and the frequency entanglement between the two modes is quantified. We show that entanglement can be straightforwardly encoded in the frequency-bin degree of freedom and propose a feasible experiment to verify entangled photon pairs. The experimental implementation is systematically analyzed, and the preferable parameter regime for entanglement verification is identified. An inequality is given as a criterion for good entanglement verification with analysis of practical imperfections.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1990

AlSb/InAs/AlSb quantum wells

Researchers studied the InAs/AlSb system recently, obtaining 12nm wide quantum wells with room temperature mobilities up to 28,000 cm(exp 2)/V center dot S and low-temperature mobilities up to 325,000 cm(exp 2)/V center dot S, both at high electron sheet concentrations in the 10(exp 12)/cm(exp 2) range (corresponding to volume concentrations in the 10(exp 18)/cm(exp 2) range). These wells were not intentionally doped; the combination of high carrier concentrations and high mobilities suggest that the electrons are due to not-intentional modulation doping by an unknown donor in the AlSb barriers, presumably a stoichiometric defect, like an antisite donor. Inasmuch as not intentionally doped bulk AlSb is semi-insulating, the donor must be a deep one, being ionized only by draining into the even deeper InAs quantum well. The excellent transport properties are confirmed by other observations, like excellent quantum Hall effect data, and the successful use of the quantum wells as superconductive weak links between Nb electrodes, with unprecendentedly high critical current densities. The system is promising for future field effect transistors (FETs), but many processing problems must first be solved. Although the researchers have achieved FETs, the results so far have not been competitive with GaAs FETs.

Kroemer, Herbert↗
DOE OSTI2022

Quantum anomalous Hall effect in perfectly compensated collinear antiferromagnetic thin films

Here, we show that the quantum anomalous Hall effect almost always occurs in magnetic topological insulator thin films whenever the top and bottom surface layer magnetizations are parallel at some temperature, independent of the interior layer magnetization configuration. Using this criterion, we identify structures that have a quantum anomalous Hall effect even though they have collinear magnetic structures with no net magnetization, and discuss strategies for realizing these interesting magnetic states experimentally.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

A covariant simultaneous action for branes

Highlights: • A novel variational approach is presented. • It provides a shortcut towards the second variation of geometrical models. • This should be of interest, for its generality, to various areas of theoretical physics. - Abstract: A covariant simultaneous action for branes in an arbitrary curved background spacetime is considered. The term ‘simultaneous’ is imported from variational calculus and refers to the fact that extremization of the action produces at once both the first and second variations of a given geometrical action for the brane. The action depends on a pair of independent field variables, the brane embedding functions, through the canonical momentum of a reparametrization invariant geometric model for the brane, and an auxiliary vector field. The form of the action is analogous to a symplectic potential. Extremization of the simultaneous action produces at once the equations of motion and the Jacobi equations for the brane geometric model, and it also provides a convenient shortcut towards its second variation. In this note, we consider geometric models depending only on the intrinsic geometry of the brane worldvolume, and discuss briefly the generalization to extrinsic geometry dependent models. The approach is illustrated for Dirac–Nambu–Goto [DNG] branes. For a relativistic particle, a simultaneous action was introduced by Ba z-dot ański, that served as an inspiration for the present work.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Photoinduced Rotation of Colloidal Semiconductor Nanocrystals in an Electric Field

In this work, we demonstrate that solution-phase semiconductor nanocrystals (NCs) undergo photoinduced rotation in an external electric field. Present measurements backed by theoretical calculations show that the rotation of colloidal NCs is driven by the excited-state dipole moment, which is counterbalanced by the solvent viscosity drag. Corresponding angular velocities range from 0.5°/ns for cubic CsPbBr 3 NCs to 3°/ns for nanoparticles with a large photoinduced charge separation (CdSe/CdS core–shell and dot-in-a-rod NCs). Because of photoinduced rotation, solution-phase semiconductor NCs exhibited an order-of-magnitude increase in the spectral changes caused by the quantum confined Stark effect (QCSE), compared to solid NC assemblies. The enhanced QCSE of colloidal NCs reflected their global alignment in solution, which could be retained in a solid environment by slow crystallization. Overall, we expect that the demonstrated phenomenon of the colloidal nanocrystal rotation in an electric field will open up new avenues for developing electro-optical and voltage-sensitive applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗