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Results for “oxide interfaces”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

The friction and wear properties of sputtered hard refractory compounds

Several refractory silicide, boride, and carbide coatings were examined. The coatings were applied to type 440C steel surfaces by radio-frequency sputtering. The friction and wear properties of the coatings were found to be related to stoichiometry and impurity content of the bulk coating as well as the degree of interfacial adherence between coating and substrate. Bulk coating stoichiometry could to a large extent be controlled by the application of a negative bias voltage during deposition. Adherence was promoted by the formation of an oxidized layer at the interface. Deliberate preoxidizing of the 440C produced enhanced adherence for many compounds which are related to the formation of a mixed oxide transition region.

Brainard, W. A.↗
NASA NTRS1978

The friction and wear properties of sputtered hard refractory compounds

The friction and wear properties of several refractory silicides, borides, and carbide coatings were examined. The coatings were applied to type 440C steel surfaces by radio-frequency sputtering. The friction and wear properties of the coatings were found to be related to stoichiometry and impurity content of the bulk coating as well as the degree of interfacial adherence between coating and substrate. Bulk coating stoichiometry could to large extent be controlled by the application of a negative bias voltage during deposition. Adherence was promoted by the formation of an oxidized layer at the interface. Deliberate preoxidizing of the 440C produced enhanced adherence for many compounds which is related to the formation of a mixed oxide transition region.

Brainard, W. A.↗
DOE OSTI2023

Direct experimental evidence of tunable charge transfer at the LaNiO 3 / CaMnO 3 ferromagnetic interface

Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a promising avenue for controlling such phenomena both statically and dynamically. In this work, we utilize a combination of depth-resolved soft x-ray standing-wave and hard x-ray photoelectron spectroscopies in conjunction with polarization-dependent x-ray absorption spectroscopy to investigate the effects of the metal-insulator transition in LaNiO 3 on the electronic and magnetic states at the LaNiO 3 /CaMnO 3 interface. Here, we report a direct observation of the reduced effective valence state of the interfacial Mn cations in the metallic superlattice with an above-critical LaNiO 3 thickness (6 unit cells, u.c.) facilitated by the charge transfer of itinerant Ni 3d e g electrons into the interfacial CaMnO 3 layer. Conversely, in an insulating superlattice with a below-critical LaNiO 3 thickness of 2 u.c., a homogeneous effective valence state of Mn is observed throughout the CaMnO 3 layers due to the blockage of charge transfer across the interface. The ability to switch and tune interfacial charge transfer enables precise control of the emergent ferromagnetic state at the LaNiO 3 /CaMnO 3 interface and, thus, has far-reaching consequences on the future strategies for the design of next-generation spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Improved passivation of the ZnO/Si interface by pulsed laser deposition

Zinc oxide thin-films were grown on crystalline silicon employing magnetron sputtering and pulsed laser deposition. Bulk and interface properties were investigated using scanning electron microscopy, Raman backscattering, photoluminescence, and infrared spectroscopic ellipsometry. Sputter deposited ZnO samples reveal a large degree of disorder and an interface defect density of Almost-Equal-To 10{sup 12} cm{sup -2}. A significant improvement of the structural quality is observed in samples grown by pulsed laser deposition. The bulk defect density is further reduced, when introducing monatomic oxygen during deposition. Simultaneously, the defect density at the ZnO/Si interface decreases by about a factor of five. Implications for devices containing ZnO/Si interfaces are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Modeling of surface-state induced inter-electrode isolation of n -on- p devices in mixed-field and γ -irradiation environments

Position sensitive n-on-p silicon sensors will be utilized in the tracker and in the High Granularity Calorimeter (HGCAL) of the Compact Muon Solenoid (CMS) experiment at High Luminosity Large Hadron Collider (HL-LHC). The detrimental effect of the radiation-induced accumulation of positive net oxide charge on position resolution in n-on-p sensors has typically been countered by the application of isolation implants like p-stop or p-spray between n + -electrodes. In addition to the positively charged layer inside the oxide and close to the Si/SiO 2 -interface, surface damage introduced by ionizing radiation in SiO 2 -passivated silicon particle detectors includes the accumulation of trapped-oxide-charge and interface traps. A previous study of either n/γ (mixed field)- or γ-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed evidence of substantially higher introduction rates of acceptor- and donor-type deep interface traps (N it,acc/don ) in mixed-field environment. Here, in this work, an inter-pad and -strip resistance (or resistivity (ρ int )) simulation study of n-on-p sensors with and without p-stop isolation implants was conducted for both irradiation types. Higher levels of ρint showed correlation to higher densities of deep N it,acc/don , with the inter-pad isolation performance of the mixed-field irradiated sensors becoming independent of the presence of p-stop implant between the n + - electrodes up to about 100 kGy. The low introduction rates of deep N it,acc/don in γ-irradiated sensors resulted in high sensitivity of ρ int to the presence and peak doping of p-stop above the lowest dose of about 7 kGy in the study. As a consequence of the advantageous influence of radiation-induced accumulation of deep N it on the inter-electrode isolation, position sensitive n-on-p sensors without isolation implants may be considered for future HEP-experiments where the radiation is largely due to hadrons.

Akchurin, N. [Texas Tech Univ., Lubbock, TX (Unite↗
DOE OSTI2015

Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

Hot-carrier-induced linear drain current (I{sub dlin}) and threshold voltage (V{sub th}) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the V{sub th} increasing and the channel conductance (G{sub ch}) decreasing, then reduces I{sub dlin}. In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (G{sub d}), and then increases I{sub dlin}. Consequently, the eventual I{sub dlin} degradation is controlled by the competition of the two mechanisms due to conductance modulation in the both regions. Based on the model, it is explained that the measured I{sub dlin} anomalously increases while the V{sub th} is increasing with power law. The thin layer field pLDMOS exhibits more severe V{sub th} instability compared with thick SOI layer structure; as a result, it should be seriously evaluated in actual application in switching circuit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

β-(Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3}/Ga{sub 2}O{sub 3} (010) heterostructures grown on β-Ga{sub 2}O{sub 3} (010) substrates by plasma-assisted molecular beam epitaxy

By systematically changing growth parameters, the growth of β-(Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3}/Ga{sub 2}O{sub 3} (010) heterostructures by plasma-assisted molecular beam epitaxy was optimized. Through variation of the Al flux under O-rich conditions at 600 °C, β-(Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3} (010) layers spanning ∼10% to ∼18% Al{sub 2}O{sub 3} were grown directly on β-Ga{sub 2}O{sub 3} (010) substrates. Nominal β-(Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3} (010) compositions were determined through Al:Ga flux ratios. With x = ∼0.18, the β-(Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3} (020) layer peak in a high-resolution x-ray diffraction (HRXRD) ω-2θ scan was barely discernible, and Pendellösung fringes were not visible. This indicated that the phase stability limit of Al{sub 2}O{sub 3} in β-Ga{sub 2}O{sub 3} (010) at 600 °C was less than ∼18%. The substrate temperature was then varied for a series of β-(Al{sub ∼0.15}Ga{sub ∼0.85}){sub 2}O{sub 3} (010) layers, and the smoothest layer was grown at 650 °C. The phase stability limit of Al{sub 2}O{sub 3} in β-Ga{sub 2}O{sub 3} (010) appeared to increase with growth temperature, as the β-(Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3} (020) layer peak with x = ∼0.18 was easily distinguishable by HRXRD in a sample grown at 650 °C. Cross-sectional transmission electron microscopy (TEM) indicated that β-(Al{sub ∼0.15}Ga{sub ∼0.85}){sub 2}O{sub 3} (010) layers (14.4% Al{sub 2}O{sub 3} by energy dispersive x-ray spectroscopy) grown at 650 °C were homogeneous. β-(Al{sub ∼0.20}Ga{sub ∼0.80}){sub 2}O{sub 3} (010) layers, however, displayed a phase transition. TEM images of a β-(Al{sub ∼0.15}Ga{sub ∼0.85}){sub 2}O{sub 3}/Ga{sub 2}O{sub 3} (010) superlattice grown at 650 °C showed abrupt layer interfaces and high alloy homogeneity.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Al and Ge simultaneous oxidation using neutral beam post-oxidation for formation of gate stack structures

To obtain a high-quality Germanium (Ge) metal–oxide–semiconductor structure, a Ge gate stacked structure was fabricated using neutral beam post-oxidation. After deposition of a 1-nm-thick Al metal film on a Ge substrate, simultaneous oxidation of Al and Ge was carried out at 300 °C, and a Ge oxide film with 29% GeO{sub 2} content was obtained by controlling the acceleration bias power of the neutral oxygen beam. In addition, the fabricated AlO{sub x}/GeO{sub x}/Ge structure achieved a low interface state density of less than 1 × 10{sup 11 }cm{sup −2 }eV{sup −1} near the midgap.

36 MATERIALS SCIENCE↗
DOE OSTI2025

A statistical representation of bond coating oxidation under environmental barrier coatings

Environmental barrier coatings (EBCs) protect SiC-based ceramic matrix composites (CMCs) in turbine hot sections from high-temperature volatilization in combustion gases. The formation of a SiO 2 thermally grown oxide (TGO) is expected under the EBC after long-term operation. The oxidation resistance of the EBC is understood as a life-limiting factor for the CMC, and this work predicts long-term oxidation behavior under EBCs through a simple statistical approach. Specimens were exposed to 1350°C isothermal conditions for 100-h thermal cycles in flowing steam for up to 1000 h. The EBC morphology, SiO 2 thickness, and SiO 2 cracking behavior were assessed. Using thousands of SiO 2 thickness measurements across many millimeters of the interface, a realistic representation of the entire TGO was captured via a lognormal distribution. The lognormal fit parameters were extrapolated out to 25 000 h to assess the degree of SiO 2 growth, the spread of SiO 2 thicknesses related to the rough oxidizing interface, and percentages of the intermediate bond coating consumed. In conclusion, local interfacial defects from the coating deposition process are identified as local failure points for EBC—CMC systems.

SiO 2↗
DOE OSTI2023

Reduction‐induced metal/oxide interfacial sites for selective CO 2 hydrogenation

Abstract The interfacial structures of bimetallic‐derived catalysts play an important role in promoting the activation of reactants such as CO 2 . In particular, both the physical property (e.g., local bonding environment) and the electronic property (e.g., oxidation state) can evolve from their native states under different environments, such as upon reduction and during the catalytic reaction. Hence, taking the CO 2 hydrogenation reaction over Rh‐based catalysts as a case study, the present work compares the interfacial structures in tuning the selectivity toward CH 4 or CO. The combination of ex situ and in situ characterization reveals two representative interfacial structures: the Rh/CeO x interface formed over Rh/CeO 2 is active and selective to produce CH 4 (~95%) by following a formate‐mediated pathway; in comparison, the InO x /Rh interface derived after reduction is active for CO 2 activation and enables a redox mechanism for the exclusive formation of CO (~100%). This work provides insights into the environment‐induced structural evolution at the metal−oxide interfaces, as well as the role of distinct interfacial active sites in tuning the selectivity of CO 2 hydrogenation.

10 SYNTHETIC FUELS↗
DOE OSTI2013

Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Computational Study of Indium Oxide Photoelectrodes

Using a combination of first-principles molecular dynamics simulations and electronic structure calculations, we characterize the atomistic structure and vibrational properties of a photocatalytic surface of In 2 O 3 , a promising photoelectrode for the production of hydrogen peroxide. We then investigate the surface in contact with water and show that the electronic states of In 2 O 3 are appropriately positioned in energy to facilitate the two-electron water oxidation reaction (WOR) over the competing four-electron oxygen evolution reaction. In conclusion, we further propose that the use of strained thin films interfaced with water is beneficial in decreasing the optical gap of In 2 O 3 and thus in utilizing a wider portion of the solar spectrum for the WOR.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Interfacial reaction induced phase separation in La{sub x}Hf{sub y}O films

Amorphous La{sub x}Hf{sub y}O films containing La at concentrations (x) of 50 and 20% were prepared by atomic layer deposition on ultrathin SiO{sub 2} films (1 nm). We examined the electronic structures and microstructures of the La{sub x}Hf{sub y}O films by x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), and x-ray diffraction (XRD). Phase separation into La{sub 2}O{sub 3} and HfO{sub 2} was observed in the La{sub x}Hf{sub y}O films subjected to annealing temperatures over 900 deg. C, although the mixture of La{sub 2}O{sub 3} and HfO{sub 2} is thermodynamically stable. The structural changes that occurred as the result of phase separation were dependent on the concentrations of La and Hf in the films. During the annealing treatment, silicate was produced due to interfacial reactions and the interfacial reactions were found to be dependent on the La{sub 2}O{sub 3} content in the La{sub x}Hf{sub y}O films, which has a significant influence on the phase separation process and resulting film structure.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Enhancing interfacial magnetization with a ferroelectric

Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface’s magnetic properties can be probed at an atomic level. In this paper, we use polarized neutron reflectometry to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZr 0.2 Ti 0.8 O 3 /La 0.8 Sr 0.2 MnO 3 (PZT/LSMO)] heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can be greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0μ B /f.u., a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven by the ferroelectric polarization. Finally, these compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Atomic-Scale Mechanisms of Oxygen Electrode Delamination in Solid Oxide Electrolyzer Cells

Materials used for different components (electrodes, electrolyte, steel interconnects, etc.) of solid oxide electrolyzer cell (SOEC) devices for hydrogen production have to function in aggressive, corrosive environments and in the presence of electric fields. This results in a number of degradation processes at interfaces between components. In this study, we used a combination of first-principles, density-functional-theory (DFT) calculations and thermodynamic modeling to elucidate the main processes that contribute into the oxygen delamination in typical SOEC device consisting of yttria-stabilized zirconia (YSZ) electrolyte and Sr-doped LaMnO3 (LSM) oxygen electrode. We found that high temperature inter-diffusion of different atoms across the LSM/YSZ interface significantly affects structural stability of the materials and their interface. In particular, we found that La and Sr substitutional defects positioned in ZrO2 oxide and near LSM/YSZ interface significantly change oxygen transport which may develop pressure buildup in the interfacial region and eventually develop delamination process. Simple models for estimating these effects are proposed, and different possibilities for inhibiting and/or mitigating undesirable delamination processes are discussed.

08 HYDROGEN↗
DOE OSTI2016

Structure and chemistry of passivated SiC/SiO{sub 2} interfaces

Here, we report on the chemistry and structure of 4H-SiC/SiO{sub 2} interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO{sub 2} interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Optically probing Al—O and O—H vibrations to characterize water adsorption and surface reconstruction on α-alumina: An experimental and theoretical study

Oxide/water interfaces are ubiquitous in a wide variety of applications and the environment. Despite this ubiquity, and attendant decades of study, gaining molecular level insight into water/oxide interaction has proven challenging. In part, this challenge springs from a lack of tools to concurrently characterize changes in surface structure (i.e., water/oxide interaction from the perspective of the solid) and O—H population and local environment (i.e., water/oxide interaction from the water perspective). Here, we demonstrate the application of surface specific vibrational spectroscopy to the characterization of the interaction of the paradigmatic α-Al{sub 2}O{sub 3}(0001) surface and water. By probing both the interfacial Al—O (surface phonon) and O—H spectral response, we characterize this interaction from both perspectives. Through electronic structure calculation, we assign the interfacial Al—O response and rationalize its changes on surface dehydroxylation and reconstruction. Because our technique is all-optical and interface specific, it is equally applicable to oxide surfaces in vacuum, ambient atmospheres and at the solid/liquid interface. Application of this approach to additional alumina surfaces and other oxides thus seems likely to significantly expand our understanding of how water meets oxide surfaces and thus the wide variety of phenomena this interaction controls.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Interplay between Facets and Defects during the Dissociative and Molecular Adsorption of Water on Metal Oxide Surfaces

Both surface terminations and defects play a central role in determining how water interacts with metal oxides, thereby setting important properties of the interface that govern reactivity such as the type and distribution of hydroxyl groups. However, the interconnections between facets and defects remain poorly understood, limiting the usefulness of conventional notions such as that hydroxylation is controlled by metal cation exposure at the surface. Here, using hematite (α-Fe 2 O 3 ) as a model system, we show how oxygen vacancies overwhelm surface cation-dependent hydroxylation behavior. Synchrotron-based ambient-pressure X-ray photoelectron spectroscopy was used to monitor the adsorption of molecular water and its dissociation to form hydroxyl groups in situ on (001), (012), or (104) facet-engineered hematite nanoparticles. Supported by density functional theory calculations of the respective surface energies and oxygen vacancy formation energies, the findings show how oxygen vacancies are more prone to form on higher energy facets and induce surface hydroxylation at extremely low relative humidity values of 5 x10 - 5 %. Further, when these vacancies are eliminated, the extent of surface hydroxylation across the facets is as expected from the areal density of exposed iron cations at the surface. These findings help answer fundamental questions about the nature of reducible metal oxide-water interfaces in natural and technological settings and lay the groundwork for rational design of improved oxide-based catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗