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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,009 records · Page 56
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DOE OSTI2014

Competing spin pumping effects in magnetic hybrid structures

Pure spin current can be detected by its conversion into charge current in nanometer thick nonmagnetic metal layer with large spin-orbit coupling by means of the inverse spin Hall effect (ISHE). Recently, it has been shown that the metallic ferromagnet Permalloy (Py) can also be used as spin current detector in experiments in which an ISHE voltage is created in a Py layer in contact with the insulating ferromagnet yttrium iron garnet (YIG) under a thermal gradient in the longitudinal spin Seebeck configuration. Here, we report experiments with microwave driven spin pumping in heterostructures made with single crystal YIG film and a nanometer thick Py or Pt layer that show that Py behaves differently than nonmagnetic metals as a spin current detector. The results are attributed to the competition between the spin currents generated by the dynamics of the magnetizations in YIG and in Py, which are exchange coupled at the interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO{sub 3}/SrTiO{sub 3} interfaces

We report that in unannealed LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell, the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

Local magnetoresistance (MR) through silicon (Si) and its bias voltage (V{sub bias}) (bias current (I{sub bias})) dependence in ferromagnet (FM)/MgO/silicon-on-insulator lateral spin valves are investigated. From the experimental measurements, we find that the local-MR through Si increases with increasing V{sub bias}. This anomalous increase of local-MR as a function of V{sub bias} can be understood by considering the standard drift-diffusion theory improved by taking into account the difference in the interface resistances and first order quantum effect between FM/MgO/Si (source) and Si/MgO/FM (drain) interfaces. The interface resistance dependence on experimentally obtained local-MR ratios also agrees with the improved standard spin diffusion theory. These results indicate that experimentally observed local-MR is certainly related to the spin signal through the Si bulk band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Forward gate-bias stress experiments are performed to investigate the variation of trap states under Schottky contact in GaN-based high electron mobility transistors. Traps with activation energy E{sub T} ranging from 0.22 eV to 0.31 eV are detected at the gate-semiconductor interface by dynamic conductance technique. Trap density decreases prominently after stressing, particularly for traps with E{sub T} > 0.24 eV. X-ray photoelectron spectroscopy measurements reveal a weaker Ga-O peak on the stressed semiconductor surface. It is postulated that oxygen is stripped by Ni to form NiO upon electrical stress, contributing to the decrease in O{sub N} donor sates under the gate contact.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy

Manganese nitrides thin films on MgO (100) substrates with and without Cu-doping have been fabricated by plasma assisted molecular beam epitaxy. Antiperovskite compounds Mn{sub 3.6}Cu{sub 0.4}N have been grown in the case of Cu-doping, and the pure Mn{sub 3}N{sub 2} single crystal has been obtained without Cu-doping. The Mn{sub 3.6}Cu{sub 0.4}N exhibits ferrimagnetism, and the magnetization of Mn{sub 3.6}Cu{sub 0.4}N increases upon the temperature decreasing from 300 K to 5 K, similar to Mn{sub 4}N. The exchange bias (EB) effects emerge in the Mn{sub 3.6}Cu{sub 0.4}N films. The EB behavior is originated from the interfaces between ferrimagnetic Mn{sub 3.6}Cu{sub 0.4}N and antiferromagnetic metal Mn, which is verified to be formed by the data of x-ray photoelectron spectroscopy. The present results not only provide a strategy for producing functional antiperovskite manganese nitrides, but also shed promising light on fabricating the exchange bias part of spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Nanostructured double-layer FeO as nanotemplate for tuning adsorption of titanyl phthalocyanine molecules

The growth, structure of Pt(111) supported double-layer FeO and the adsorption of titanyl phthalocyanine (TiOPc) molecules with tunable site and orientation were presented. According to the atomic-resolution STM image, the structure was rationalized as (8√3 × 8√3) R30°/Pt(111) nanostructure constructed by Fe species coordinated with different number of oxygen on top of non-rotated (8 × 8) FeO /Pt(111) structure. Due to the modulation of the stacking of Fe atoms in the second layer relative to the O atoms in the second layer and the underlying layer, the interface and total dipole moment periodically vary within (8√3 × 8√3) R30°/Pt(111) structure. The resulted periodically distributed dipole-dipole interaction benefits the growth of TiOPc molecules with area-selective sites and molecular orientations. Thus, this study provides a reliable method to govern the adsorption process of the polar molecules for potential applications in future functional molecular devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Epitaxial polymorphism of La{sub 2}O{sub 3} on Si(111) studied by in situ x-ray diffraction

The phase formation of La{sub 2}O{sub 3} epitaxial films during growth on Si(111) is investigated by synchrotron-based in situ grazing incidence x-ray diffraction and high resolution transmission electron microscopy. We find that first a 2–4 nm thick cubic bixbyite La{sub 2}O{sub 3} layer grows at the interface to Si(111) substrate, followed by a hexagonal La{sub 2}O{sub 3} film. Hence, to keep a cubic on cubic heteroepitaxy and to achieve high quality epitaxial nanostructures or multi-layers, the thickness of the interfacial La{sub 2}O{sub 3} layer has to be restricted to 2 nm. The larger formation energy of the cubic phase can only partially be compensated by the biaxial strain in the epitaxial film based on density functional perturbation theory. Hence, the stabilization of the cubic phase is not due to bulk strain but could be related to a lower surface or interface free energy, or to kinetic effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Seeking to quantify the ferromagnetic-to-antiferromagnetic interface coupling resulting in exchange bias with various thin-film conformations

Ni{sub 3}Fe/(Ni, Fe)O thin films with bilayer and nanocrystallite dispersion morphologies are prepared with a dual ion beam deposition technique permitting precise control of nanocrystallite growth, composition, and admixtures. A bilayer morphology provides a Ni{sub 3}Fe-to-NiO interface, while the dispersion films have different mixtures of Ni{sub 3}Fe, NiO, and FeO nanocrystallites. Using detailed analyses of high resolution transmission electron microscopy images with Multislice simulations, the nanocrystallites' structures and phases are determined, and the intermixing between the Ni{sub 3}Fe, NiO, and FeO interfaces is quantified. From field-cooled hysteresis loops, the exchange bias loop shift from spin interactions at the interfaces are determined. With similar interfacial molar ratios of FM-to-AF, we find the exchange bias field essentially unchanged. However, when the interfacial ratio of FM to AF was FM rich, the exchange bias field increases. Since the FM/AF interface ‘contact’ areas in the nanocrystallite dispersion films are larger than that of the bilayer film, and the nanocrystallite dispersions exhibit larger FM-to-AF interfacial contributions to the magnetism, we attribute the changes in the exchange bias to be from increases in the interfacial segments that suffer defects (such as vacancies and bond distortions), that also affects the coercive fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Spin valve effect of the interfacial spin accumulation in yttrium iron garnet/platinum bilayers

We report the spin valve effect in yttrium iron garnet/platinum (YIG/Pt) bilayers. The spin Hall effect (SHE) generates spin accumulation at the YIG/Pt interface and can be opened/closed by magnetization switching in the electrical insulator YIG. The interfacial spin accumulation was measured in both YIG/Pt and YIG/Cu/Pt structures using a planar Hall configuration. The spin valve effect remained, even after a 2 nm thick Cu layer was inserted between the YIG and Pt layers, which aimed to exclude the induced magnetization at the YIG/Pt interface. The transverse Hall voltage and switching field were dependent on the applied charge current density. The origin of this behavior can be explained by the SHE induced torque exerted on the domain wall, caused by the transfer of the spin angular momentum from the spin-polarized current to the YIG magnetic moment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Surface sensitivity of the spin Seebeck effect

We have investigated the influence of the interface quality on the spin Seebeck effect (SSE) of the bilayer system yttrium iron garnet (YIG)–platinum (Pt). The magnitude and shape of the SSE is strongly influenced by mechanical treatment of the YIG single crystal surface. We observe that the saturation magnetic field (H{sub sat}{sup SSE}) for the SSE signal increases from 55.3 mT to 72.8 mT with mechanical treatment. The change in the magnitude of H{sub sat}{sup SSE} can be attributed to the presence of a perpendicular magnetic anisotropy due to the treatment induced surface strain or shape anisotropy in the Pt/YIG system. Our results show that the SSE is a powerful tool to investigate magnetic anisotropy at the interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Spin current generation from sputtered Y₃Fe₅O₁₂ films

Spin current injection from sputtered yttrium iron garnet (YIG) films into an adjacent platinum layer has been investigated by means of the spin pumping and the spin Seebeck effects. Films with a thickness of 83 and 96 nanometers were fabricated by on-axis magnetron rf sputtering at room temperature and subsequent post-annealing. From the frequency dependence of the ferromagnetic resonance linewidth, the damping constant has been estimated to be (7.0 ± 1.0) × 10⁻⁴. Magnitudes of the spin current generated by the spin pumping and the spin Seebeck effect are of the same order as values for YIG films prepared by liquid phase epitaxy. The efficient spin current injection can be ascribed to a good YIG|Pt interface, which is confirmed by the large spin-mixing conductance (2.0 ± 0.2) × 10¹⁸m⁻².

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Atomic and electronic structure of the SrNbO{sub 3}/SrNbO{sub 3.4} interface

We have determined the atomic-scale structure of the SrNbO{sub 3}/SrNbO{sub 3.4} interface and related it to the electronic structure. Experimentally, transmission electron microscopy observations reveal that SrNbO{sub 3} and SrNbO{sub 3.4} show orientation relationships [1{sup ¯}10]{sub SrNbO{sub 3}} // [010]{sub SrNbO{sub 3{sub .{sub 4}}}} and (110){sub SrNbO{sub 3}} // (001){sub SrNbO{sub 3{sub .{sub 4}}}}, and that their interface is coherent and atomically abrupt. Theoretically, this interface is found to be strongly anisotropic in electronic structure, and takes on quasi-one-dimensional nature. We also find that the interface impacts greatly the electron occupation of Nb d orbitals, particularly d{sub z}{sup 2} orbital. The combined study represents a relevant advance in atomically bridging structures to properties of heterointerfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhancement of Spin-transfer torque switching via resonant tunneling

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Fabrication of (111)-oriented Ca{sub 0.5}Sr{sub 0.5}IrO{sub 3}/SrTiO{sub 3} superlattices—A designed playground for honeycomb physics

We report the fabrication of (111)-oriented superlattice structures with alternating 2m-layers (m = 1, 2, and 3) of Ca{sub 0.5}Sr{sub 0.5}IrO{sub 3} perovskite and two layers of SrTiO{sub 3} perovskite on SrTiO{sub 3}(111) substrates. In the case of m = 1 bilayer films, the Ir sub-lattice is a buckled honeycomb, where a topological state may be anticipated. The successful growth of superlattice structures on an atomic level along the [111] direction was clearly demonstrated by superlattice reflections in x-ray diffraction patterns and by atomically resolved transmission electron microscope images. The ground states of the superlattice films were found to be magnetic insulators, which may suggest the importance of electron correlations in Ir perovskites in addition to the much discussed topological effects.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Sign change in the tunnel magnetoresistance of Fe{sub 3}O{sub 4}/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

Magnetite (Fe{sub 3}O{sub 4}) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe{sub 3}O{sub 4}/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200°C and 280°C. Our findings suggest an Mg interdiffusion from the MgO barrier into the Fe{sub 3}O{sub 4} as the reason for the change of the TMR. Additionally, different treatments of the magnetite interface (argon bombardment, annealing at 200°C in oxygen atmosphere) during the preparation of the MTJs have been studied regarding their effect on the performance of the MTJs. A maximum TMR of up to -12% could be observed using both argon bombardment and annealing in oxygen atmosphere, despite exposing the magnetite surface to atmospheric conditions before the deposition of the MgO barrier.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Application of the self-consistent quantum method for simulating the size quantization effect in the channel of a nano-scale dual gate MOSFET

Self-Consistent Quantum Method using Schrodinger-Poisson equations have been used for determining the Channel electron density of Nano-Scale MOSFETs for 6nm and 9nm thick channels. The 6nm thick MOSFET show the peak of the electron density at the middle where as the 9nm thick MOSFET shows the accumulation of the electrons at the oxide/semiconductor interface. The electron density in the channel is obtained from the diagonal elements of the density matrix; [ρ]=[1/(1+exp(β(H − μ)))] A Tridiagonal Hamiltonian Matrix [H] is constructed for the oxide/channel/oxide 1D structure for the dual gate MOSFET. This structure is discretized and Finite-Difference method is used for constructing the matrix equation. The comparison of these results which are obtained by Quantum methods are done with Semi-Classical methods.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electronic and magnetic properties of off-stoichiometric Co{sub 2}Mn{sub β}Si/MgO interfaces studied by x-ray magnetic circular dichroism

We have studied the electronic and magnetic states of Co and Mn atoms at the interface of the Co{sub 2}Mn{sub β}Si (CMS)/MgO (β = 0.69, 0.99, 1.15, and 1.29) magnetic tunnel junction (MTJ) by means of x-ray magnetic circular dichroism. In particular, the Mn composition (β) dependences of the Mn and Co magnetic moments were investigated. The experimental spin magnetic moments of Mn, m{sub spin}(Mn), derived from x-ray magnetic circular dichroism weakly decreased with increasing Mn composition β in going from Mn-deficient to Mn-rich CMS films. This behavior was explained by first-principles calculations based on the antisite-based site-specific formula unit (SSFU) composition model, which assumes the formation of only antisite defect, not vacancies, to accommodate off-stoichiometry. Furthermore, the experimental spin magnetic moments of Co, m{sub spin}(Co), also weakly decreased with increasing Mn composition. This behavior was consistently explained by the antisite-based SSFU model, in particular, by the decrease in the concentration of Co{sub Mn} antisites detrimental to the half-metallicity of CMS with increasing β. This finding is consistent with the higher tunnel magnetoresistance ratios which have been observed for CMS/MgO/CMS MTJs with Mn-rich CMS electrodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗