Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “material defects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

A Review on Friction Stir Processing of Titanium Alloy: Characterization, Method, Microstructure, Properties

In the past two decades, friction stir processing (FSP) technology has received considerable attention. FSP can be used to adjust and control the microstructure of materials, including eliminating defects, destroying dendrites and controlling fractions in the second stage, and is therefore widely used in titanium and its alloys for biomedical, aerospace and automotive applications. This article comprehensively reviews the methods of studying FSP, the microstructure evolution of materials and the summary of material properties. It begins with the introduction of the FSW system, characterization, structure and elemental analysis, and simulation and performance testing methods, and then introduces the microstructure evolution mechanism of various titanium materials and discusses in detail the material properties of titanium alloy, namely hardness and wear resistance, elasticity and plasticity, corrosion resistance and biocompatibility. Finally, this review presents unresolved issues and outstanding challenges in FSP technology and reveals the direction of this emerging field of research.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of “stirring” defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700 °C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Update on INSIGHTS Development

INSIGHTS is a transformational separate effects testing capability to perform in situ irradiation studies and characterization of the microscale behavior of nuclear fuel materials under a wide variety of in-pile conditions. Separate effects testing including growth, irradiation, and monitoring of these materials, and encompasses the full science based approach for fuels development from the nanoscale to the mesoscale behavior of the sample material and other defects driven by the modeling and simulation efforts of INL.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1985

Energy shadowing correction of ultrasonic pulse-echo records by digital signal processing

A numerical algorithm is described that enables the correction of energy shadowing during the ultrasonic testing of bulk materials. In the conventional method, an ultrasonic transducer transmits sound waves into a material that is immersed in water so that discontinuities such as defects can be revealed when the waves are reflected and then detected and displayed graphically. Since a defect that lies behind another defect is shadowed in that it receives less energy, the conventional method has a major drawback. The algorithm normalizes the energy of the incoming wave by measuring the energy of the waves reflected off the water/air interface. The algorithm is fast and simple enough to be adopted for real time applications in industry. Images of material defects with the shadowing corrections permit more quantitative interpretation of the material state.

Kishonio, D.↗
DOE OSTI2014

Nanoscale mapping of the W/Si(001) Schottky barrier

The W/Si(001) Schottky barrier was spatially mapped with nanoscale resolution using ballistic electron emission microscopy (BEEM) and ballistic hole emission microscopy (BHEM) using n-type and p-type silicon substrates. The formation of an interfacial tungsten silicide is observed utilizing transmission electron microscopy and Rutherford backscattering spectrometry. The BEEM and BHEM spectra are fit utilizing a linearization method based on the power law BEEM model using the Prietsch Ludeke fitting exponent. The aggregate of the Schottky barrier heights from n-type (0.71 eV) and p-type (0.47 eV) silicon agrees with the silicon band gap at 80 K. Spatially resolved maps of the Schottky barrier are generated from grids of 7225 spectra taken over a 1 μm × 1 μm area and provide insight into its homogeneity. Histograms of the barrier heights have a Gaussian component consistent with an interface dipole model and show deviations that are localized in the spatial maps and are attributed to compositional fluctuations, nanoscale defects, and foreign materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1973

Oxidation at through-hole defects in fused slurry silicide coated columbium alloys FS-85 and Cb-752

Metal recession and interstitial contamination at 0.08-centimeter-diameter through-hole intentional defects in fused slurry silicide coated FS-85 and Cb-752 columbium alloys were studied to determine the tolerance of these materials to coating defects. Five external pressure reentry simulation exposures to 1320 C and 4.7 x 1,000 N/sq m (maximum pressure) resulted in a consumed metal zone having about twice the initial defect diameter for both alloys with an interstitial contamination zone extending about three to four initial defect diameters. Self-healing occurred in the 1.33 x 10 N/sq m, 1320 C exposures and to a lesser extent in internal pressure reentry cycles to 1320 C and 1.33 x 100 N/sq m (maximum pressure).

Levine, S. R.↗
DOE OSTI2025

Radiation-induced vacancy injection in heterogeneous multiphase materials

Understanding the synergy between corrosion and defect dynamics is a key consideration in the development of advanced materials for extreme environments. Here, we reveal a surprising phenomenon for the transport of point defects induced by irradiation in a heterogeneous multiphase structure of a metal and an oxide, similar to that formed under metal corrosion that takes place in most environments. Despite the confinement of the produced damage within the oxide, vacancies were injected into the unirradiated metal and coarsened with dose. Furthermore, the results show that the nature of the oxide layer dictates the defect evolution in the metal layer. This work reveals an interesting mechanism for point defect interactions in multiphase materials, with broad implications in many fields, while also emphasizing the complex coupling between corrosion and irradiation. Corrosion leads to the formation of multiphase materials, while irradiation enhances diffusion within the heterogeneous phases, which can impact corrosion rates.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Mesoscopic theory of defect ordering–disordering transitions in thin oxide films

Abstract Ordering of mobile defects in functional materials can give rise to fundamentally new phases possessing ferroic and multiferroic functionalities. Here we develop the Landau theory for strain induced ordering of defects (e.g. oxygen vacancies) in thin oxide films, considering both the ordering and wavelength of possible instabilities. Using derived analytical expressions for the energies of various defect-ordered states, we calculated and analyzed phase diagrams dependence on the film-substrate mismatch strain, concentration of defects, and Vegard coefficients. Obtained results open possibilities to create and control superstructures of ordered defects in thin oxide films by selecting the appropriate substrate and defect concentration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Nucleation and Growth of Bubbles in He Ion Implanted V/Ag Multilayers

Microstructures of He ion-implanted pure Ag, pure V and polycrystalline V/Ag multilayers with individual layer thickness ranging from 1 nm to 50 nm were investigated by transmission electron microscopy (TEM). The bubbles in the Ag layer were faceted and larger than the non-faceted bubbles in the V layer under the same implantation conditions for both pure metals and multilayers. The substantially higher single defects surviving the spike phase and lower mobility of trapped He in bcc than those in fcc could account for this difference. For multilayers, the bubbles nucleate at interfaces but grow preferentially in Ag layers due to high mobility of trapped He in fcc Ag. In addition, the He concentration above which bubbles can be detected in defocused TEM images increases with decreasing layer thickness, from 0 for pure Ag to 4–5 at. % for 1 nm V/1 nm Ag multilayers. In contrast, the bubble size decreases with decreasing layer thickness, from approximately 4 nm in diameter in pure Ag to 1 nm in the 1 nm V/1 nm Ag multilayers. Elongated bubbles confined in the Ag layer by the V–Ag interfaces were observed in 1 nm multilayers. These observations show that bubble nucleation and growth can be suppressed to high He concentrations in nanoscale composites with interfaces that have high He solubility.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Influence of tungsten doping on nonradiative electron–hole recombination in monolayer MoSe 2 with Se vacancies

Two-dimensional transition metal dichalcogenides (TMDs) are receiving significant attention due to their excellent electronic and optoelectronic properties. The material quality is greatly affected by defects that are inevitably generated during material synthesis. Focusing on chalcogenide vacancies, which constitute the most common defect, we use the state-of-the-art simulation methodology developed in our group to demonstrate that W doping of MoSe 2 with Se vacancies reduces charge carrier losses by two mechanisms. First, W doping makes the formation of double Se vacancies unfavorable, while it is favorable in undoped MoSe 2 . Second, if a Se vacancy is present, the charge carrier lifetimes are extended in the W-doped MoSe 2 . Combining ab initio real-time time-dependent density functional theory with nonadiabatic molecular dynamics, the simulations show that the nonradiative carrier losses in the presence of Se vacancies proceed by sub-10 ps electron trapping and relaxation down the manifold of trap states, followed by a 100 ps recombination of trapped electrons with free holes. The electron–vibrational energy exchange is driven by both in-plane and out-of-plane vibrational motions of the MoSe 2 layer. Additionally, the atomistic studies advance our understanding of the influence of defects on charge carrier properties in TMDs and guide improvements of material quality and development of TMD applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Results of Post-Process NDE Using Advanced Techniques on AM Parts

The purpose of this report is to provide an overview of the FY24 activities to apply advanced nondestructive examination (NDE) methods to materials and components produced using advanced manufacturing (AM) processes such as Laser Powder Bed Fusion (LPBF) and Direct Energy Deposition (DED) and assess the challenges of examining these materials to identify defects and microstructure variations. This work was performed as part of the U.S. Department of Energy‘s Office of Nuclear Energy Advanced Materials and Manufacturing Technologies (AMMT) Program. The primary mission of the AMMT program is to develop advanced materials and manufacturing technologies that enable both the current fleet and the next generation of advanced nuclear reactors to operate safely and economically, and to maintain U.S. leadership in technology development for nuclear energy systems.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Uranium vacancy mobility at the sigma Σ5 symmetric tilt grain boundary in UO 2

An important consequence of the fissioning process occurring during burnup is the formation of fission products. These fission products alter the thermo-mechanical properties of the fuel. They also lead to macroscopic changes in the fuel structure, including the formation of bubbles that are connected to swelling of the fuel. Subsequent release of fission gases increase the pressure in the plenum and can cause changes in the properties of the fuel pin itself. It is thus imperative to understand how fission products, and fission gases in particular, behave within the fuel in order to predict the performance of the fuel under operating conditions. Fission gas redistribution within the fuel is governed by mass transport and the presence of sinks such as impurities, dislocations, and grain boundaries. Thus, to understand how the distribution of fission gases evolves in the fuel, we must understand the underlying transport mechanisms, tied to the concentrations and mobilities of defects within the material, and how these gases interact with microstructural features that might act as sinks. Both of these issues have been addressed in previous work under NEAMS. However, once a fission product has reached a sink, such as a grain boundary, its mobility may be different there than in the grain interior and predicting how, for example, bubbles nucleate within grain boundaries necessitates an understanding of how fission gases diffuse within boundaries. That is the goal of the present work. In this report, we describe atomic level simulations of uranium vacancy diffusion in the pressence of a Σ5 symmetric tilt boundary in urania (UO 2 ). This boundary was chosen as it is the simplest of the boundaries we considered in previous work on segregation and serves as a starting point for understanding defect mobility at boundaries. We use a combination of molecular statics calculations and kinetic Monte Carlo (kMC) to determine how the mobility of uranium vacancies is altered at this particular grain boundary. Given that the diffusion of fission gases such as Xe are tied to the mobility of uranium vacancies, these results given insight into how fission gas mobility differs at grain boundaries compared to bulk urania.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2016

Theoretical insights on the electro-thermal transport properties of monolayer MoS{sub 2} with line defects

Two dimensional (2D) materials demonstrate several novel electrical, mechanical, and thermal properties which are quite distinctive to those of their bulk form. Among many others, one important potential application of the 2D material is its use in the field of energy harvesting. Owing to that, here we present a detailed study on electrical as well as thermal transport of monolayer MoS{sub 2}, in quasi ballistic regime. Besides the perfect monolayer in its pristine form, we also consider various line defects which have been experimentally observed in mechanically exfoliated MoS{sub 2} samples. For calculating various parameters related to the electrical transmission, we employ the non-equilibrium Green's function-density functional theory combination. However, to obtain the phonon transmission, we take help of the parametrized Stillinger-Weber potential which can accurately delineate the inter-atomic interactions for the monolayer MoS{sub 2}. Due to the presence of line defects, we observed significant reductions in both the charge carrier and the phonon transmissions through a monolayer MoS{sub 2} flake. Moreover, we also report a comparative analysis showing the temperature dependency of the thermoelectric figure of merit values, as obtained for the perfect as well as the other defective 2D samples.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

CHARGED POINT DEFECTS AND DEFECT COMPLEXES IN PHOSPHORENE AND STRUCTURAL PREDICTION OF TAU-11, A DENSITY FUNCTIONAL THEORY APPROACH

With the advent of powerful computers, first principle calculations have become a robust and reliable tool to complement experiments in the study of materials. First principle calculations such as density functional theory can be used to guide experiments to save time and effort when it comes to new and advanced materials discovery. Study of charge defects in materials and crystal structure prediction are such areas in which density functional theory calculations facilitate the prediction of defect formation energy, charge transition levels and elemental site occupations. Experimentally, studying charge defects requires inferring results from various techniques. Likewise, determining site occupancies for similar elements using experimental techniques is challenging and sometimes impossible. In this work, we study the charged intrinsic and extrinsic defects and defect complexes in phosphorene and determine the site occupancies of Al, Fe and Si in the τ11 phase using density functional theory. In the defect work, we calculate the defect formation energy, charge transition level, binding energies and Stokes shift for vacancy, dopant substitution and dopant-vacancy defect complexes in phosphorene. We found that vacancy defect in phosphorene becomes negatively charged in n-type doping and may passivate the dopants and reduce carrier concentration and mobility. For non-metal dopants in phosphorene, we predict that O, S and Si prefer to form dopant-vacancy complexes removing the vacancy defect states from the band gap. Mn dopant-vacancy defect complex exhibits possibility of switching between two magnetic spin states. Lastly, using density functional theory, we complement the results from neutron powder diffraction to determine the site occupancies of Al and Si in τ11 phase which was used to determine the alloying element to develop a high temperature and low density alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Features of defect formation during the growth of double heterostructures for injection lasers based on Al{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y}/GaSb materials

A lack of lattice defects and, in particular, a lack of dislocations in the active layer in complex multilayer heteroepitaxial systems is the basic condition for the efficient and reliable operation of optoelectronic microdevices. Minimum elastic stresses in multilayer heteroepitaxial systems and their lack in the active layer at that elevated temperature that occurs in an efficiently operating electronic device is the second necessary condition for its long-term operation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mechanical properties, strain hardening, and fracture behavior of ultrasonic additively manufactured Zircaloy-4 after low-temperature neutron irradiation

Ultrasonic additive manufacturing (UAM) is a solid-state, layer-by-layer advanced manufacturing process that has the potential to create custom spatially controlled composites with embedded wires and sensors for nuclear component manufacture. For this work, to assess the feasibility of using UAM for nuclear-relevant materials research, the technique was used to produce a 3.5-mm-thick Zircaloy-4 plate for irradiation testing. The UAM Zircaloy-4 specimens were irradiated in the High Flux Isotope Reactor at a target irradiation temperature of 117 °C to 2.9 displacements per atom (dpa) to assess differences in irradiation-hardening behavior as a function of alloy processing path. The UAM and reference baseplate (BP) materials increased in yield strength by 372±27 MPa and 346±21 MPa, respectively, and both suffered significant reductions in uniform and total elongation attributed to irradiation hardening at low-temperature. Although the materials had similar nanoscale defect structures, including nanoscale black dot/loop features and strain-induced dislocation channels, the UAM material’s processing-related defects resulted in accelerated strain localization and failure as demonstrated by lower post-irradiation uniform elongation of UAM specimens (0.5 %) compared to BP (1.5 %) material. The UAM material also showed considerable anisotropy in mechanical response due to crack propagation along weld boundaries, resulting in differences in strength & ductility when tested parallel and perpendicular to the prior UAM build orientation. Therefore, although the fundamental irradiation response of UAM-processed Zircaloy-4 was phenomenologically comparable to that of BP reference material, additional optimization of the UAM processing is needed to produce irradiation-resistant and nuclear-relevant materials.

Digital image correlation↗
DOE OSTI2016

Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Ionization-induced annealing of pre-existing defects in silicon carbide

A long-standing objective in materials research is to find innovative ways to remove preexisting damage and heal fabrication defects or environmentally induced defects in materials. Silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power, high-frequency applications. Its high corrosion and radiation resistance makes it a key refractory/structural material with great potential for extremely harsh radiation environments. Here we show that the energy transferred to the electron system of SiC by energetic ions via inelastic ionization processes results in a highly localized thermal spike that can effectively heal preexisting defects and restore the structural order. This work reveals an innovative self-healing process using highly ionizing ions, and it describes a critical aspect to be considered in modeling SiC performance as either a functional or a structural material for device applications or high-radiation environments.

36 MATERIALS SCIENCE↗