Optimization of polymer photovoltaic cells with bulk heterojunction layers hundreds of nanometers thick: modifying the morphology and cathode interface
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charge transport↗
SEARCH · Engineering Papers
Results for “interface defects”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Modulation doping to control the high-density electron gas at a polar/non-polar oxide interface
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bio-inspired↗
A crystal plasticity study of the influence of grain interactions on the plastic stability of heterophase interfaces in Cu-Nb lamellar composites
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nuclear (including radiation effects), defects, me↗
Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures
Negative magnetoresistances (NMRs) have been widely observed in two-dimensional electron gases (2DEGs). However, their origins are under debate. Here, we report on NMRs in the 2DEG in AlGaN/GaN heterostructures, aiming to uncover their origins by utilizing electric field gating. We systematically measured the magnetoresistances in magnetic fields up to 12 T and at temperatures between 3 and 260 K and observed NMRs over a wide range of temperatures from 3 to 170 K, which become more pronounced with decreasing temperature. We conducted electric field gating experiments to correlate the occurrence of NMRs with the relationship between electron mobility and density. The latter is governed by defect scattering sources in the sample and can be theoretically modeled. Comparison of the measured electron mobility and electron density relationship with theory reveals that interface roughness scattering plays a crucial role in obtaining large NMRs. Our work demonstrates that electric field gating provides a means not only to tune the values of NMRs but also to uncover their mechanisms.
2-dimensional systems↗
Effect of defects on reaction of NiO surface with Pb-contained solution
In order to understand the role of defects in chemical reactions, we used two types of samples, which are molecular beam epitaxy (MBE) grown NiO(001) film on Mg(001) substrate as the defect free NiO prototype and NiO grown on Ni(110) single crystal as the one with defects. In-situ observations for oxide-liquid interfacial structure and surface morphology were performed for both samples in water and Pb-contained solution using high-resolution X-ray reflectivity and atomic force microscopy. For the MBE grown NiO, no significant changes were detected in the high-resolution X-ray reflectivity data with monotonic increase in roughness. Meanwhile, in the case of native grown NiO on Ni(110), significant changes in both the morphology and atomistic structure at the interface were observed when immersed in water and Pb-contained solution. Our results provide simple and direct experimental evidence of the role of the defects in chemical reaction of oxide surfaces with both water and Pb-contained solution.
Kim, Jongjin↗
Graphene nanopore field effect transistors
Graphene holds great promise for replacing conventional Si material in field effect transistors (FETs) due to its high carrier mobility. Previously proposed graphene FETs either suffer from low ON-state current resulting from constrained channel width or require complex fabrication processes for edge-defecting or doping. Here, we propose an alternative graphene FET structure created on intrinsic metallic armchair-edged graphene nanoribbons with uniform width, where the channel region is made semiconducting by drilling a pore in the interior, and the two ends of the nanoribbon act naturally as connecting electrodes. The proposed GNP-FETs have high ON-state currents due to seamless atomic interface between the channel and electrodes and are able to be created with arbitrarily wide ribbons. In addition, the performance of GNP-FETs can be tuned by varying pore size and ribbon width. As a result, their performance and fabrication process are more predictable and controllable in comparison to schemes based on edge-defects and doping. Using first-principle transport calculations, we show that GNP-FETs can achieve competitive leakage current of ∼70 pA, subthreshold swing of ∼60 mV/decade, and significantly improved On/Off current ratios on the order of 10{sup 5} as compared with other forms of graphene FETs.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Molecular requirements for the formation of a kinetochore–microtubule interface by Dam1 and Ndc80 complexes
Kinetochores are large protein complexes that link sister chromatids to the spindle and transduce microtubule dynamics into chromosome movement. In budding yeast, the kinetochore–microtubule interface is formed by the plus end–associated Dam1 complex and the kinetochore-resident Ndc80 complex, but how they work in combination and whether a physical association between them is critical for chromosome segregation is poorly understood. Here, we define structural elements required for the Ndc80–Dam1 interaction and probe their function in vivo. A novel ndc80 allele, selectively impaired in Dam1 binding, displayed growth and chromosome segregation defects. Its combination with an N-terminal truncation resulted in lethality, demonstrating essential but partially redundant roles for the Ndc80 N-tail and Ndc80–Dam1 interface. In contrast, mutations in the calponin homology domain of Ndc80 abrogated kinetochore function and were not compensated by the presence of Dam1. Our experiments shed light on how microtubule couplers cooperate and impose important constraints on structural models for outer kinetochore assembly.
59 BASIC BIOLOGICAL SCIENCES↗
Dynamical properties of AlN nanostructures and heterogeneous interfaces predicted using COMB potentials
A new empirical variable charge potential has been developed for AlN within the third-generation charge optimized many-body (COMB3) potential framework. We report the potential is able to reproduce the fundamental physical properties of AlN, including cohesive energy, elastic constants, defect formation energies, surface energies and phonon properties of AlN obtained from experiments and first-principles calculations. The thermodynamic properties of the Al(1 1 1)-AlN ( 1 0 1 ¯ 0 ) and Al 2 O 3 (0 0 0 1)-AlN ( 1 0 1 ¯ 0 ) interfaces and the tensile response of AlN nanowires and nanotubes are investigated in classical molecular dynamical (MD) simulations using this COMB3 potential. The results demonstrate that the potential is well suited to model heterogeneous materials in the Al–O–N system. Most importantly, the fully transferrable potential parameters can be seamlessly coupled with existing COMB3 parameters of other elements to enable MD simulations for an even wider range of heterogeneous materials systems.
36 MATERIALS SCIENCE↗
Ionic Modulation at the LaAlO 3 /KTaO 3 Interface for Extreme High-Mobility Two-Dimensional Electron Gas
Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides-based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxides devices remains far behind their 3d-oxides analogs. The carriers’ mobility in these oxides is significantly hampered by the inevitable presence of defects. Here, in this study, very high mobility (≈22 650 cm 2 V –1 s –1 ) of 5d-2DES confined at the LaAlO 3 /KTaO 3 interface is reported. The high mobility, which is beyond the values observed in SrTiO 3 2DESs in the same carrier-density range, is achieved using the ionic-liquid gating at room temperature. The authors postulate that the ionic-liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back-gate voltage, the authors reveal that the mobility follows the power-law µ ∝ n 1.2 , indicating the very high quality of ionic-liquid-gated LaAlO 3 /KTaO 3 devices, consistent with the postulate. Furthermore, the analysis of the quantum oscillations confirms that the high-mobility electrons occupy the electronic sub-bands emerging from the Ta:5d orbitals of KTaO 3 .
36 MATERIALS SCIENCE↗
Controlling the defects and transition layer in SiO 2 films grown on 4 H -SiC via direct plasma-assisted oxidation
The structural stability and electrical performance of SiO 2 grown on SiC via direct plasma-assisted oxidation were investigated. To investigate the changes in the electronic structure and electrical characteristics caused by the interfacial reaction between the SiO 2 film (thickness ~ 5 nm) and SiC, X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), density functional theory (DFT) calculations, and electrical measurements were performed. The SiO 2 films grown via direct plasma-assisted oxidation at room temperature for 300s exhibited significantly decreased concentrations of silicon oxycarbides (SiO x C y ) in the transition layer compared to that of conventionally grown (i.e., thermally grown) SiO 2 films. Moreover, the plasma-assisted SiO 2 films exhibited enhanced electrical characteristics, such as reduced frequency dispersion, hysteresis, and interface trap density ( D it ≈ 10 11 cm -2 · eV -1 ). In particular, stress induced leakage current (SILC) characteristics showed that the generation of defect states can be dramatically suppressed in metal oxide semiconductor (MOS) structures with plasma-assisted oxide layer due to the formation of stable Si-O bonds and the reduced concentrations of SiO x C y species defect states in the transition layer. That is, energetically stable interfacial states of high quality SiO 2 on SiC can be obtained by the controlling the formation of SiO x C y through the highly reactive direct plasma-assisted oxidation process.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Changes in electrical properties of MOS transistor induced by single 14 MeV neutron
Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using in-situ method during neutron irradiation. The average degradation of the gain current is 35 mA at maximum fluence of 2.0 × 10{sup 10} n/cm2 while with an average of 25 mA at minimum fluence of 5.0 × 10{sup 8} n/cm{sup 2}. The change in channel current gain increased proportionally with neutron fluence, meanwhile drain saturation current decreased proportionally with the neutron fluence.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Interface engineering of phase separation in SrRuO 3 /SrTiO 3 hybrid superlattices
Most observed phase separation phenomena in complex oxides occur in systems with chemical dopants or structural defects, and theories have established the strong connection between phase separation and the random distribution of chemical dopants. Recent experiments on fabricated high-quality oxide superlattices also confirmed that the phase separation is suppressed in the clean systems without chemical disorders. Thus far, phase separation in strongly correlated oxides without the need of chemical dopants or structural defects has not been fully demonstrated. Here, we have built chemically ordered hybrid superlattices using prototypical SrRuO 3 and SrTiO 3 perovskite oxides. Contrary to previous understandings, we observe phase separation of two magnetic phases with different spin easy axes. We elucidate this phenomenon through first-principles calculations that the hybrid superlattices have a spontaneous structural instability, leading to a coexistence of ferromagnetic and antiferromagnetic phases. In this work, our findings provide an alternative pathway other than chemical doping to introduce phase separation in correlated oxides and imply that phase separation can exist in clean systems without the need of chemical disorders.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Tunable Thermal Transport across Interfaces via Phonon Engineering
The influence of He ion radiation on GaAs thermal conductivity was investigated using TDTR and the PGM. We found that damage in the shallow defect only regions of the radiation profile scattering phonons with a frequency to the fourth dependence due to randomly distributed Frankel pairs. Damage near the end of range however, scatters phonons with a second order frequency dependence due to the cascading defects caused by the rapid radiation energy loss at the end of range resulting in defect clusters. Using the PGM and experimental thermal conductivity trends it was then possible to estimate the defect recombination rate and size of defect clusters. The methodology developed here results in a powerful tool for interrogating radiation damage in semiconductors.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Nitride Materials and Interfaces for Radiation-Hard Integrated Neutron Detection
This presentation discusses project goals, including: develop new UWBG ternary nitride materials for radiation tolerant neutron detectors, understand stability and defect behavior, and demonstrate device functionality.
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,C↗
Regulation of Surface Defect Chemistry toward Stable Ni-Rich Cathodes
Surface reconstruction of Ni-rich layered oxides (NLO) degrades the cycling stability and safety of high-energy-density lithium-ion batteries (LIBs), which challenges typical surface-modification approaches to build a robust interface with electrochemical activity. Here, a strategy of leveraging the low-strain analogues of Li- and Mn-rich layered oxides (LMR) to reconstruct a stable surface on the Ni-rich layered cathodes is proposed. The new surface structure not only consists of a gradient chemical composition but also contains a defect-rich structure regarding the formation of oxygen vacancies and cationic ordering, which can simultaneously facilitate lithium diffusion and stabilize the crystal structure during the (de)lithiation. These features in the NLO lead to a dramatic improvement in electrochemical properties, especially the cyclability under high voltage cycling, exhibiting the 30% increase in capacity retention after 200 cycles at the current density of 1 C (3.0-4.6 V). We report the findings offer a facile and effective way to regulate defect chemistry and surface structure in parallel on Ni-rich layered structure cathodes to achieve high-energy density LIBs.
25 ENERGY STORAGE↗
Final Report: Stability and Novel Properties of Magnetic Materials and Ferromagnet / Insulator Interfaces
We report investigations of the synthesis, structure, and properties of new materials for spintronic applications integrated onto silicon substrates. Our primary focus is materials with very high, negative, intrinsic spin polarization of the density of states at the Fermi level. We have developed a new synthesis method for Fe 3 O 4 thin films through selective oxidation of Fe, resulting in smooth, low-defect density films. We have synthesized Fe4N films and shown that they preferentially oxidize to Fe 3 O 4 . When integrated into magnetic tunnel junctions consisting of Fe4N / AlOx / Fe, oxidation at the Fe4N / AlOx interface creates Fe 3 O 4 , leading to negative tunneling magnetoresistance (TMR). Oxidation of Fe in nominally symmetric CoFe / AlOx / CoFe also produces Fe 3 O 4 and negative TMR under selected oxidation conditions.
36 MATERIALS SCIENCE↗
Hierarchical Hybrid Multifunctional Materials through Interface Engineering
This project focuses on the development of stimuli-responsive hybrid multifunctional materials. We place emphasis on the design, synthesis, structural characterization, evaluation of functional properties (electronic, thermal and optical) of several (1-x)Cu 2 Se/(x)WBGS hierarchical bulk composites between Cu 2 Se, a narrow band gap semiconductor (NBGS), with a range of wider band gap semiconductors (WBGS) such as CuMSe 2 (M = Al, Ga, In, Fe, Cr) and Cu 4 TiSe 4 . Cu2Se is a well-studied NBGS with excellent thermoelectric properties (high electrical conductivity, large thermopower, etc.) while CuMSe 2 and Cu 4 TiSe 4 are high performance solar absorber materials (large band gap, large absorption coefficient, etc.). Our primary objectives are (i) to demonstrate the ability to integrate dissimilar functional properties such as large optical absorption coefficient and high electronic conductivity, within (1-x)Cu 2 Se/(x)WBGS composite; and (ii) to establish the correlation between the hierarchical structural entanglement of Cu 2 Se with WBGS (CuMSe 2 or Cu 4 TiSe 4 ) phase, the interactions between native electronic defects within the coexisting phases in the resulting (1-x)Cu 2 Se/(x)WBGS bulk composites , and the impacts on their electronic conductivity, thermal transport and optical properties.
36 MATERIALS SCIENCE↗