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At least 1,009 records · Page 56

Fabricating Blazed Diffraction Gratings by X-Ray Lithography

Gray-scale x-ray lithography is undergoing development as a technique for fabricating blazed diffraction gratings. As such, gray-scale x-ray lithography now complements such other grating-fabrication techniques as mechanical ruling, holography, ion etching, laser ablation, laser writing, and electron-beam lithography. Each of these techniques offers advantages and disadvantages for implementing specific grating designs; no single one of these techniques can satisfy the design requirements for all applications. Gray-scale x-ray lithography is expected to be advantageous for making gratings on steeper substrates than those that can be made by electron-beam lithography. This technique is not limited to sawtooth groove profiles and flat substrates: various groove profiles can be generated on arbitrarily shaped (including highly curved) substrates with the same ease as sawtooth profiles can be generated on flat substrates. Moreover, the gratings fabricated by this technique can be made free of ghosts (spurious diffraction components attributable to small spurious periodicities in the locations of grooves). The first step in gray-scale x-ray lithography is to conformally coat a substrate with a suitable photoresist. An x-ray mask (see Figure 1) is generated, placed between the substrate and a source of collimated x-rays, and scanned over the substrate so as to create a spatial modulation in the exposure of the photoresist. Development of the exposed photoresist results in a surface corrugation that corresponds to the spatial modulation and that defines the grating surface. The grating pattern is generated by scanning an appropriately shaped x-ray area mask along the substrate. The mask example of Figure 1 would generate a blazed grating profile when scanned in the perpendicular direction at constant speed, assuming the photoresist responds linearly to incident radiation. If the resist response is nonlinear, then the mask shape can be modified to account for the nonlinearity and produce a desired groove profile. An example of grating grooves generated by this technique is shown in Figure 2. A maximum relative efficiency of 88 percent has been demonstrated.

Mouroulis, Pantazis↗

First-Generation Jet Propulsion Laboratory "Hockey-Puck" Free-Flying Magnetometers for Distributed In-Situ Multiprobe Measurement of Current Density Filamentation in the Northern Auroral Zone: Enstrophy Mission

The sub-orbital rocket mission was a collaborative project between the University of New Hampshire, Cornell University, and the Jet Propulsion Laboratory (JPL) to study filamentation phenomena in the northern Auroral zone. The Enstrophy mission test flies the JPL Free-Flying Magnetometer (FFM) concept. The FFM technology development task has been funded by NASA develop miniaturized, low-power, integrated "sensorcrafts". JPL's role was to design, integrate, test, and deliver four FFMs for deployment from the sounding rocket, allowing a unique determination of curl-B. This provides a direct measurement of magnetic-field-aligned current density along the rocket trajectory. A miniaturized three-axis fluxgate magnetometer was integrated with a 4-channel 22-bit sigma-delta Analog to Digital Converter (ADC), four temperature sensors, digital control electronics, seven (Li-SOCl2) batteries, two (4 deg x 170 deg field of view) sun-sensors, a fan-shaped-beam laser diode beacon, a (16 MHz) stable Temperature Compensated Crystal Oscillator (TCXO) clock, Radio Frequency (RF) communication subsystem, and an antenna for approximately 15 minutes of operation where data was collected continuously and transmitted in three (3) bursts (approximately 26 seconds each) to ground station antennas at Poker Flat, Alaska. FFMs were stowed within two trays onboard the rocket during the rocket launch and were released simultaneously using the spinning action of the rocket at approximately 300 km altitude (approximately 100 sec. into the flight). FFMs were deployed with spin rate of approximately 17 Hz and approximately 3 m/sec linear velocity with respect to the rocket. For testing purposes while the rocket was in the launch pad and during flight prior to release of FFMs from the rocket, commands (such as "power on", "test", "flight", "power off', and clock "Reset" signal) were transmitted via a infrared Light Emitting Diode to an infrared detector in the FFM. Special attention was paid to low magnetic signature electronic design and choice of materials in packaging. The miniaturized fluxgate magnetometers had a range of 1-60000 nT with 0.1% full-scale linearity. The frequency range of interest for magnetic measurement was 10 mHz - 50 Hz. Digital data from the magnetometer's three axes were placed in a 4MB Static Random Access Memory (SRAM) in data packages (frames) formatted together with time tags and frame ID. After a specified time was elapsed, the data were Viterbi encoded and transmitted at a rate of 100 kbps (BPSK). Each of the four FFMs transmitted at different frequency. These carrier frequencies were in the range of 2200-2300 MHz. The antenna was a single patch on a high dielectric constant substrate covering one end-plate of the hockey-puck-sized unit. The local clocks aboard the FFMs were reset at the start of the mission and stayed synchronized within 3 msec during the mission. Position of each FFM with respect to the rocket is calculated by the knowledge of its release velocity (measured at exit point of the FFM launcher tract) providing an accuracy of 1 m over the maximum range of 3 km. Spatial and temporal nature of observants can be separated to within 3 m in space or 3 msec time interval.

Javadi, H.↗

Applicability of semiclassical theories in the strong-field plasma regime

For many purposes, classical plasma dynamics models can work surprisingly well, even for strong electromagnetic fields, approaching the Schwinger critical fields, and high frequencies, approaching the Compton frequency. However, the applicability of classical models tends to depend rather sensitively on the details of the problem. In the present paper, we study the specific case of plasma oscillations to draw a line between the classical and quantum relativistic regimes. Here, due to the field geometry of study, mechanisms like radiation reaction and Breit-Wheeler pair production, which tend to be important for electromagnetic fields, are rather effectively suppressed. Moreover, we find that the polarization current due to the electron spin is generally negligible for frequencies below the Compton frequency, compared with the free current, whose magnitude is well-approximated by the classical Vlasov theory. However, we show that pair creation due to the Schwinger mechanism can sometimes be important for surprisingly modest field strengths, of the order of 10% of the critical field or even smaller. A rough guideline for when the classical Vlasov theory can be applied is given.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

High laser fluence ITO coatings utilizing a Fabry-Perot thin film filter to reduce effective absorption

Laser-induced damage threshold of transparent conductors, such as Indium Tin Oxide (ITO), is limited by their high optical absorption due to free carriers. However, the effective absorption of a transparent conductor thin film can be reduced by an order of magnitude, without changing the electrical characteristics of the film, when placed in a low electric field section of a multilayer coating. A Fabry-Perot thin film interference filter has both high transmittance and low electric field positions, so it is an ideal thin film structure for this application. Although Fabry-Perot interference filters are not known as particularly high laser-induced damage resistant coatings due to their resonant characteristics, a laser-induced damage threshold (LIDT) improvement of up to 8× was observed with this technique compared to single layer ITO coatings fabricated using either radio frequency magnetron sputtering or electron-beam deposition. Additionally, an approximately 4× LIDT improvement for a Fabry-Perot interference filter has been observed by the addition of ITO into the multilayer structure.

47 OTHER INSTRUMENTATION↗

One- and two-qubit gate infidelities due to motional errors in trapped ions and electrons

In this work, we derive analytic formulas that determine the effect of error mechanisms on one- and two-qubit gates in trapped ions and electrons. First, we analyze and derive expressions for the effect of driving field inhomogeneities on one-qubit gate fidelities. Second, we derive expressions for two-qubit gate errors, including static motional frequency shifts, trap anharmonicities, field inhomogeneities, heating, and motional dephasing. We show that, for small errors, each of our expressions for infidelity converges to its respective numerical simulation; this shows that our formulas are sufficient for determining error budgets for high-fidelity gates, obviating numerical simulations in future projects. All of the derivations are general to any internal qubit state, and any mixed state of the ion crystal's motion that is diagonal in the Fock state basis. Our treatment of static motional frequency shifts, trap anharmonicities, heating, and motional dephasing apply to both laser-based and laser-free gates, while our treatment of field inhomogeneities applies to laser-free systems.

74 ATOMIC AND MOLECULAR PHYSICS↗

Impact of Photon Recycling, Grain Boundaries, and Nonlinear Recombination on Energy Transport in Semiconductors

Energy carrier transport and recombination in semiconductors can be directly monitored with optical microscopy, revealing key insights into fundamental photophysics and informs efficient optoelectronic device design. Oftentimes, energy transport is measured by monitoring a time-resolved expanding carrier profile after optical excitation under a focused laser beam. Although this approach has gained widespread adoption, the presence of competing dynamic processes, such as diffusion and photon recycling, has made it difficult to accurately extract and understand important semiconductor properties. Here, we develop and apply a new framework for modeling energy transport in both excitonic and free carrier semiconductors. Here, we demonstrate that processes such as nonlinear recombination and photon recycling can have a significant impact on the apparent energy carrier profiles, especially for excitonic materials with short radiative lifetimes. Additionally, we find that film microstructure can lead to unique transport profiles that strongly depends on material boundary behavior and the difference between feature size and diffusion length. Here, these findings provide a deeper understanding of energy transport in semiconducting materials and provide new strategies for the design and optimization of electronic and optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Waveform-dependent air fluorescence from neutral and ionic nitrogen molecules

Laser-induced air fluorescence in the ultraviolet regime is primarily attributed to transitions between the C and B states in excited neutral N 2 molecules and between the B and X states in N$^+_2$ ions. However, the mechanism underlying the former remains contentious, as direct population to the C state by light fields is forbidden by electron spin constraints. In this work, we investigate the mechanism of air fluorescence from excited neutral N 2 molecules by carrier-envelope phase–stabilized sub–4 femtosecond pulses. Our results show that fluorescence from N$^+_2$ ions reaches a maximum with cosine-like pulses, while fluorescence from excited neutral N 2 molecules peaks with sine-like pulses. In addition, by scanning the chirp of the driving pulse, we find that ionic fluorescence is maximized with chirp-free pulses, whereas neutral fluorescence favors negatively chirped pulses. These observations, supported by classical trajectory Monte Carlo simulations, support the mechanism of intersystem crossing from excited spin-singlet states, which are populated via recollision-induced strong-field excitation.

Science & Technology - Other Topics↗

Towards an Imaging Mid-Infrared Heterodyne Spectrometer

We are developing a concept for a compact, low-mass, low-power, mid-infrared (MIR; 5- 12 microns) imaging heterodyne spectrometer that incorporates fiber optic coupling, Quantum Cascade Laser (QCL) local oscillator, photomixer array, and Radio Frequency Software Defined Readout (RFSDR) for spectral analysis. Planetary Decadal Surveys have highlighted the need for miniaturized, robust, low-mass, and minimal power remote sensing technologies for flight missions. The drive for miniaturization of remote sensing spectroscopy and radiometry techniques has been a continuing process. The advent of MIR fibers, and MEMS techniques for producing waveguides has proven to be an important recent advancement for miniaturization of infrared spectrometers. In conjunction with well-established photonics techniques, the miniaturization of spectrometers is transitioning from classic free space optical systems to waveguide/fiber-based structures for light transport and producing interference effects. By their very nature, these new devices are compact and lightweight. Mercury-Cadmium-Telluride (MCT) and Quantum Well Infrared Photodiodes (QWIP) arrays for heterodyne applications are also being developed. Bulky electronics is another barrier that precluded the extension of heterodyne systems into imaging applications, and our RFSDR will address this aspect.

Hewagama, T.↗

All-optical photoluminescence response of nitrogen-vacancy ensembles in diamond at low magnetic fields

All-optical (AO) microwave-free magnetometry using nitrogen-vacancy (N-𝑉) centers in diamond is attractive due to its broad applicability and reduced experimental complexity. In this work, we investigate room-temperature AO photoluminescence (PL) at low magnetic fields ( <2 mT) using diamonds with N-𝑉 ensembles at parts-per-million (ppm) concentrations. The measured AO-PL contrast features as a function of the applied magnetic field magnitude and direction are correlated with near-degenerate N-𝑉 electronic spin and hyperfine transitions from different N-𝑉 orientations within the diamond host. Reasonable agreement is found between low-field AO-PL measurements and model-based simulations of the effects of resonant dipolar interactions between N-𝑉 centers. The maximum observed AO-PL contrast depends on both the N-𝑉 concentration and the laser-illumination intensity at 532 nm. These results imply different optimal conditions for low-field AO N-𝑉 sensing compared to conventional optically detected magnetic resonance (ODMR) techniques, suggesting new research and application opportunities using AO measurements with lower system complexity, size, weight, and power.

Dipolar interaction↗

First-principles equation of state of CHON resin for inertial confinement fusion applications

A wide-range (0 to 1044.0 g/ cm 3 and 0 to 10 9 K) equation-of-state (EOS) table for a CH 1.72 O 0.37 N 0.086 quaternary compound has been constructed based on density-functional theory (DFT) molecular-dynamics (MD) calculations using a combination of Kohn-Sham DFT MD, orbital-free DFT MD, and numerical extrapolation. The first-principles EOS data are compared with predictions of simple models, including the fully ionized ideal gas and the Fermi-degenerate electron gas models, to chart their temperature-density conditions of applicability. The shock Hugoniot, thermodynamic properties, and bulk sound velocities are predicted based on the EOS table and compared to those of C-H compounds. The Hugoniot results show the maximum compression ratio of the C-H-O-N resin is larger than that of CH polystyrene due to the existence of oxygen and nitrogen; while the other properties are similar between CHON and CH. Radiation hydrodynamic simulations have been performed using the table for inertial confinement fusion targets with a CHON ablator and compared with a similar design with CH. Here, the simulations show CHON outperforms CH as the ablator for laser-direct-drive target designs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Stability of zirconium hydride

This reports complete Milestone M2.2.1 Stability of zirconium hydride: Experimental investigation of the hydrogen concentration of encapsulated zirconium hydride before and after joining. In this milestone, we first report the successful fabrication of crack-free bulk zirconium hydride by using the ORNL static hydriding system. The fabricated hydride was characterized by using X-ray diffraction (XRD) and X-ray computed tomography (XCT). XRD results showed that the δ-phase zirconium hydride, α-zirconium, and ε-phase hydride were present. XCT confirmed the absence of the internal cracking. The hydrogen concentration was determined by the weight change before and after hydrogen loading, given the fact that the oxide phase was not found during XRD analysis. Two metallic cladding materials, i.e., molybdenum and FeCrAl, were selected to encapsulate the fabricated zirconium hydride pellets. Demonstration capsules were designed and machined. Mo crucible was successfully sealed by using a combination of electron beam welding and gas tungsten arc welding. Due to the undesired neutronics property of Mo, further investigation of this cladding material was not pursued. Electron beam welding and laser beam welding were employed to seal the FeCrAl capsules. XRD were performed on the zirconium hydride before and after the sealing. The results showed that the welding process has negligible impact on the hydrogen content in the FeCrAl-canned zirconium hydride. The presented work fulfilled the proposed work under this milestone and paves a pathway to fabricate single-phase zirconium hydride and to develop robust cladding materials to can bulk zirconium hydride.

36 MATERIALS SCIENCE↗

Wake Velocimetry of a Sphere-Cone Model in a Mach 10 Air Freestream using FLEET

Velocity measurements in the wake behind a sphere-cone-shaped vehicle wind tunnel model in a Mach 10 hypersonic air flow using femtosecond laser electronic excitation tagging (FLEET) are reported in this work. The FLEET measurements were performed at 1 kHz using a femtosecond laser centered at 800 nm and an ultrahigh-speed intensified camera system. The results reported here are for a single freestream condition corresponding to approximately Re ∞ /L = 3.6∙10 6 m -1 . The performance of the velocimetry instrument was evaluated in the quiescent test section at conditions relevant to the wake measurements. For velocity measurements in the wake, the FLEET measurement volume was translated to several radial locations from the model centerline in the vertical direction and at a streamwise location corresponding to approximately 12 mm from the payload. Reverse flow with mean velocities ranging from -12 m/s to -48 m/s were observed in the recirculating region of the wake, whereas hypersonic velocities in the range of 1079 m/s to 1183 m/s were observed in the free shear layer. A velocity uncertainty methodology is also outlined and applied for the reported measurements. The velocity data reported in this work is expected to play a significant role in the validation of computational codes modeling the hard-to-predict separated hypersonic wake.

FLEET↗

Wake Velocimetry of a Sphere-Cone Model in a Mach 10 Air Freestream using FLEET

Velocity measurements in the wake behind a sphere-cone-shaped vehicle wind tunnel model in a Mach 10 hypersonic air flow using femtosecond laser electronic excitation tagging (FLEET) are reported in this work. The FLEET measurements were performed at 1 kHz using a femtosecond laser centered at 800 nm and an ultrahigh-speed intensified camera system. The results reported here are for a single freestream condition corresponding to approximately Re ∞ /L = 3.6∙10 6 m -1 . The performance of the velocimetry instrument was evaluated in the quiescent test section at conditions relevant to the wake measurements. For velocity measurements in the wake, the FLEET measurement volume was translated to several radial locations from the model centerline in the vertical direction and at a streamwise location corresponding to approximately 12 mm from the payload. Reverse flow with mean velocities ranging from -12 m/s to -48 m/s were observed in the recirculating region of the wake, whereas hypersonic velocities in the range of 1079 m/s to 1183 m/s were observed in the free shear layer. A velocity uncertainty methodology is also outlined and applied for the reported measurements. The velocity data reported in this work is expected to play a significant role in the validation of computational codes modeling the hard-to-predict separated hypersonic wake.

FLEET↗

Generation of strong fields with subcritical density plasmas to study the phase transitions of magnetized warm dense matter

Warm dense matter (WDM) is a regime where Fermi degenerate electrons play an important role in the macroscopic properties of a material. Recent experiments have brought us closer to understanding unmagnetized processes in WDM, but magnetized WDM remains unexplored because kilotesla magnetic fields are required. Although there are examples of field compression generating such fields by imploding pre-magnetized targets, these existing methods give no independent control over the parameters of the magnetized plasma and result in limited laser access for sample creation and diagnosis. In this paper, numerical simulations show that kilotesla magnetic fields can be obtained by shining laser beams onto the inner surface of a cylindrical target, rather than on the outer surface. This approach relies on field compression by a low-density, high-temperature plasma, rather than a high-density, low-temperature plasma, used in the more conventional approach. With this novel configuration, the region of peak magnetic field is mostly free of plasma, hence, other beams can reach a sample placed in the region of the peak field to form WDM and diagnose it.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Ultra-Fast Non-Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

Low-current multilevel programmability with inherent non-volatility and high stability of resistance states is required for both multi-bit memory storage and deep learning accelerators but is difficult to achieve. Here, in a resistive switching system, this work realizes >512 (>9 bits) distinct non-volatile conductance levels with stable retention for each state with current levels down to the nanoampere range, highly promising for potential integration with small processing nodes with ultra-low power consumption requirements. This is achieved by demonstrating a new thin film design concept that encompasses three key features: an ultra-thin epitaxial oxygen ionic switching layer that provides a tunable energy barrier at the bottom electrode, an overcoat amorphous layer that acts as an ion migration barrier for stable state retention, and a partial conductive filament as a localized electronic transport channel to the epitaxial switching layer. A large dynamic resistance range of up to seven orders of magnitude is achieved with reset-free transitions among intermediate states, and programmability is demonstrated with ultra-fast (20 ns) pulses. Artificial neural network (ANN) simulations, based on the experimental performance and its non-idealities, demonstrate close-to-ideal inference accuracies for various Modified National Institute of Standards and Technology (MNIST) data sets.

36 MATERIALS SCIENCE↗

Creep Deformation and Damage Mechanisms in an Advanced High-Temperature Additively Manufactured Nickel-Base Superalloy

Abstract This research investigates the processing–structure–properties–performance relationship in a novel nickel-base superalloy, ABD ® -900AM, designed for extreme environments. Specifically tailored for additive manufacturing (AM), ABD ® -900AM maintains mechanical integrity at high temperatures and is comparable to other nickel-based superalloys with a 30–40% gamma-prime volume fraction. A comprehensive study was conducted using laser-beam powder bed fusion and electron-beam powder bed fusion methods. Factors such as heat treatment, porosity, build orientation, and hot isostatic pressing were evaluated to understand their effects on microstructure and mechanical performance. Microstructural characterization revealed significant differences in grain size and orientation across build processes and heat treatments. High-temperature mechanical testing indicated that grain size, heat treatment, and orientation significantly influence creep behavior. A super-solvus heat treatment led to recrystallization and grain growth, significantly improving creep properties compared to a near-solvus heat treatment. Various creep mechanisms were identified across different conditions, and creep rupture models were developed for each build process. Post-test microstructural analysis showed grain boundary damage, with differences in creep cavitation morphology under varying stress conditions. It was shown that MC carbides grow at the expense of gamma-prime near grain boundaries, leading to precipitate-free zones in specimens tested at higher temperatures. This study fills a significant gap in fundamental research by offering a deeper insight into the high-temperature mechanical behavior of additively manufactured nickel-base superalloys. It also explores critical research questions regarding the role of carbides and the significance of heat treatment. The insights gained enhance confidence in the industry adoption of ABD ® -900AM and similar alloys for high-temperature applications, bridging the knowledge gap and supporting the development of reliable AM processes for extreme environments.

Bridges, Alex (ORCID:000000030338759X)↗

Kinetic Landau-fluid closures of non-Maxwellian distributions

New kinetic Landau-fluid closures, based on the cutoff Maxwellian distribution, are derived. A special static case is considered (the frequency ω=0). In the strongly collisional regime, our model reduces to Braginskii's heat flux model, and the transport is local. In the weak collisional regime, our model indicates that the heat flux is non-local and recovers the Hammett–Perkins model while the value of the cutoff velocity approaches to infinity. We compare the thermal transport coefficient χ of Maxwellian, cutoff Maxwellian and super-Gaussian distribution. The results show that the reduction of the high-speed tail particles leads to the corresponding reduction of the thermal transport coefficient χ across the entire range of collisionality, more reduction of the free streaming transport toward the weak collisional regime. In the collisionless limit, χ approaches to zero for the cutoff Maxwellian and the super-Gaussian distribution but remains finite for Maxwellian distribution. χ is complex if the cutoff Maxwellian distribution is asymmetric. The Im(χ) approaches to different convergent values in both collisionless and strongly collisional limit, respectively. It yields an additional streaming heat flux in comparison with the symmetric cutoff Maxwellian distribution. Furthermore, due to the asymmetric distribution, there is a background heat flux q0 though there is no perturbation. Furthermore, the derived Landau-fluid closures are general for fluid moment models, and applicable for the cutoff Maxwellian distribution in an open magnetic field line region, such as the scape-off-layer of Tokamak plasmas, in the thermal quench plasmas during a tokamak disruption, and the super-Gaussian electron distribution function due to inverse bremsstrahlung heating in laser-plasma studies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Most semiconductors exhibit a saturation of free carriers when heavily doped with extrinsic dopants. This carrier saturation or “doping limit” is known to be related to the formation of native compensating defects, which, in turn, depends on the energy positions of their conduction band minimum and valence band maximum. Here, we carried out a systematic study on the n-type doping limit of GaAs via ion implantation and showed that this doping limitation can be alleviated by the transient process of pulsed laser melting (PLM). For n-type doping, both group VI (S) and amphoteric group IV (Si and Ge) dopants were implanted in GaAs. For comparison, p-type doping was also studied using Zn as the acceptor. Implanted dopants were activated by the PLM method, and the results are compared to rapid thermal annealing (RTA). Our results reveal that for all n-type dopants, while implantation followed by the RTA results in a similar saturation electron concentration of 2–3 × 10 18 cm –3 , the transient PLM process is capable of trapping high concentration of dopants in the substitutional site, giving rise to a carrier concentration of >10 19 cm –3 , exceeding the doping limit of GaAs. However, due to scatterings from point defects generated during PLM, the mobility of n-type GaAs after PLM is low (~80–260 cm 2 /V s). Subsequent RTA after PLM (PLM + RTA) is able to remove these point defects and recover the mobility to ~1000–2000 cm2/V s. The carrier concentrations of these PLM + RTA samples are reduced but are still a factor of 3 higher than RTA only GaAs. This can be understood as the dopants are already incorporated in the substitutional site after PLM; they are less likely to be “deactivated” by subsequent RTA. This work is significant to the understanding of doping mechanisms in semiconductors and provides a means for device applications, which require materials with ultra-high doping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗