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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Temperature dependence of carrier capture by defects in gallium arsenide

This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

Wampler, William R.↗
DOE OSTI2020

Defects and Mechanical Behavior of Plutonium [Slides]

Defects are important because they heavily influence material properties (e.g. strength, ductility, elasticity, conductivity, phase transformation temperatures (melting point), corrosion resistance, etc.). At LANL defects in plutonium are being characterized using many different methods (e.g. EXAFS, XRD, microscopy, RUS, DSC, dilatometry, density, etc.) My goal is to introduce a complimentary method of understanding defects in δ-Pu using the mechanical microscope concept. Using well-developed theories of first principles strengthening mechanisms (i.e. how defects influence strength) and carefully designed experiments, mechanical testing can compliment other defect characterization tools.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Acoustic Wafer Defect Detection System

Researchers at Los Alamos have developed the Acoustic Wafer Defect Detection System, a technology that enables rapid diagnosis of critical defects during wafer production. This technology is capable of both efficient and accurate detection of defects in wafers, including defects that are undetectable through current optical techniques. The system identifies the wafer defects by exciting resonant vibrations in the wafers and by exciting “crack breathing” modes. These vibrations cause the crack to periodically open and close. Specific resonance characteristics, combined with acoustic signatures resulting from crack breathing, result in a technique that is highly sensitive to cracked wafers. There are minimal custom parts used to build the system, and it can be easily implemented in nearly any wafer production plant with minimal modifications. We are seeking a commercialization partner to license the technology or partner through a Cooperative Research and Development Agreement (CRADA) to develop into a usable product for commercial purposes.

42 ENGINEERING↗
DOE OSTI2023

The role of native defects and their diffusivity in CdTe

CdTe is a leading thin-film technology for solar-cell applications. Basic features such as the optimum band gap of 1.5 eV and simple manufacturing process have been driving the research on improving the current record efficiency of 22% for CdTe solar cells toward the theoretical limit of 32%. Low p-type doping and short carrier lifetimes in the CdTe absorber have been suggested as the main limiting factors and attributed to defect compensation and carrier recombination. Understanding the role of point defects and impurities in CdTe is crucial to solving these problems. Despite many years of research, the sources of compensation and the microscopic recombination mechanisms are still unclear. By using hybrid density functional calculations with spin-orbit coupling and large supercells, we investigate the electronic properties, the formation energies, and the diffusivities of the native defects in CdTe. As possible sources of compensation for p-type conductivity, we discuss the structural and electronic properties of Cd interstitial, Te vacancies, and TeCd antisites. The stability of each defect is discussed in terms of both the defect formation energy and the migration barrier. We also address possible mechanisms that lead to non-radiative recombination.

14 SOLAR ENERGY↗
DOE OSTI2026

Product Defect Detection System: SYSM- 5620 Final Project

Retail sales is a growing market estimated to up to seven percent year over year. With this growing market there is also a trend in growing rate of retail returns, estimated just last year at $\$$850 billion. Retail stores must ensure that products available for purchase remain safe, undamaged, and acceptable to customers throughout their time in the store. This job exists regardless of the specific solution used because stores are always responsible for preventing damaged or defective products from reaching customers and when they fail to this is categorized under operation inefficiencies which accounts for an estimated $\$$12 billion in returns. When defective items remain on the sales floor, stores may experience increased returns, reduced customer satisfaction, loss of customer trust, and potential safety concerns depending on the product type. As a result, the core job to be done is to identify defective products quickly, remove them from the sales floor before they are purchased, and preserve useful information about the defect so that the store can improve its handling, stocking, and supplier coordination over time. The need for a more reliable process is especially important in high volume retail environments where employees manage large numbers of products across many aisles, shelves, and storage areas. In these settings, manual inspection alone can be inconsistent and difficult to sustain at the individual item level. At the same time, broader retail trends continue to emphasize operational efficiency, product visibility, and improved customer experience, creating an opportunity for more automated and data driven defect detection methods.

42 ENGINEERING↗
DOE OSTI2024

Tailoring coherent charge transport in graphene by deterministic defect generation

Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging macroscopically coherent charge transport in two-dimensional electron gases and superconductors. Here, collective coherent effects are induced in a simple counterintuitive architecture by defect engineering. Deterministically introduced lattice defects in graphene enable the phase coherent charge transport by playing the role of potential barriers, instead of scattering centres as conventionally considered. Thus, graphene preserves its quasi-ballistic quantum transport and can support phase-matched charge carrier waves. Based on this approach, multiple electronic Fabry-Pèrot cavities are formed by creating periodically alternating defective and pristine nano-stripes through low energy electron-beam irradiation. Indeed, defective stripes behave as partially reflecting mirrors and resonantly confine the charge carrier waves within the pristine areas, giving rise to Fabry-Pèrot resonant modes. These modes experimentally manifest as sheet resistance oscillations, as also confirmed by Landauer-Büttiker simulations. Moreover, these coherent phenomena survive up to 30 K for both polarities of charge carriers, contrarily to traditional monopolar electrostatically created Fabry-Pèrot interferometers. Our study positions defective graphene as an innovative platform for coherent electronic devices, with potential applications in nano and quantum technologies.

Melchioni, Nicola↗
DOE OSTI2025

Decoherence of V B spin defects in monoisotopic hexagonal boron nitride

Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either 10B or 11B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure of the spin defect while changing the boron isotope, we first unambiguously confirm that it corresponds to the negatively-charged boron-vacancy center (V− B ). We then show that its spin coherence properties are slightly improved in 10B-enriched samples. This is supported by numerical simulations employing cluster correlation expansion methods, which reveal the importance of the hyperfine Fermi contact term for calculating the coherence time of point defects in hBN. Using crossrelaxation spectroscopy, we finally identify dark electron spin impurities as an additional source of decoherence. This work provides new insights into the properties of V− B spin defects, which are valuable for the future development of hBN-based quantum sensing foils.

Haykal, A.↗
NASA NTRS1974

Influence of material quality and process-induced defects on semiconductor device performance and yield

An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated. Various defect characterization techniques are described and applied. A correlation of device failure, defect type, and cause of defect is presented in tabular form with accompanying illustrations.

Porter, W. A.↗
NASA NTRS1976

The application of an optical Fourier spectrum analyzer on detecting defects in mass-produced satellite photographs

Various defects in mass-produced pictures transmitted to earth from a satellite are investigated. It is found that the following defects are readily detectable via Fourier spectrum analysis: (1) bit slip, (2) breakup causing loss of image, and (3) disabled track at the top of the imagery. The scratches made on the film during mass production, which are difficult to detect by visual observation, also show themselves readily in Fourier spectrum analysis. A relation is established between the number of scratches, their width and depth and the intensity of their Fourier spectra. Other defects that are found to be equally suitable for Fourier spectrum analysis or visual (image analysis) detection are synchronous loss without blurring of image, and density variation in gray scale. However, the Fourier spectrum analysis is found to be unsuitable for detection of such defects as pin holes, annotation error, synchronous loss with blurring of images, and missing image in the beginning of the work order. The design of an automated, real time system, which will reject defective films, is treated.

Athale, R.↗
NASA NTRS1977

The effect of oxidation-expanded defects upon MOS parameters

Implantation of Ne ions was chosen as a means of introducing a uniformly distributed quantitatively controllable and reproducible amount of microdefects at the silicon surface. Each wafer was ion-implanted on one half of its surface, the other half remaining as a control. Seven implant fluences from 1 trillion to 5 by 10 to the 14th power Ne ions/sq cm were used. The fluences, as well as the concentrations of defects expanded by the subsequent gate oxidation, were correlated with seven different MOS parameters. For implant fluences of 10 to the 14th power per sq cm and above, increasing stacking-fault densities were found. The oxide defect density associated with time-dependent breakdown increased significantly with Ne dose. The presence of oxidation-expanded defects drastically increases the surface-generation velocity and decreases the bulk lifetime. Slight increases in flatband voltage and surface-state density occurred only for the wafers having the greatest defect concentrations. Oxidation of a P-containing damaged silicon surface results in a greater pileup of P at the surface than occurs for the oxidation of a similar but undamaged surface. It appears that the expanding defects restrain the diffusion of P inward from the surface.

Prussin, S.↗
NASA NTRS1979

Characterization of defect growth structure in ion plated films by scanning electron microscopy

Copper and gold films (0.2 to 2 microns) were ion plated onto polished 304-stainless-steel surfaces. These coatings were examined by scanning electron microscopy for coating growth defects. Three types of defects were distinguished: nodular growth, abnormal or runaway growth, and spits. The cause and origin for each type of defect was traced. Nodular growth is primarily due to inherent substrate microdefects, abnormal or runaway growth is due to external surface inclusions, and spits are due to nonuniform evaporation. All these defects have adverse effects on the coatings. They induce stresses and produce porosity in the coatings and thus weaken their mechanical properties. Friction and wear characteristics are affected by coating defects, since the large nodules are pulled out and additional wear debris is generated.

Spalvins, T.↗
NASA NTRS1979

Definition of mutually optimum NDI and proof test criteria for 2219 aluminum pressure vessels. Volume 3: Applications to rail defect evaluation

The technique for inspection of railroad rails containing transverse fissure defects was discussed. Both pulse-echo and pitch-catch inspection techniques were used. The pulse-echo technique results suggest that a multiple-scan approach using varying angles of inclination, three-surface scanning, and dual-direction traversing may offer promise of characterization of transverse defects. Because each scan is likely to produce a reflection indicating only a portion of the defect, summing of the individual reflections must be used to obtain a reasonably complete characterization of the defect. The ability of the collimated pitch-catch technique to detect relatively small amounts of flaw growth was shown. The method has a problem in characterizing the portions of the defect near the top surface or web intersection. The work performed was a preliminary evaluation of the prospects for automated mapping of rail flaws.

Schwartzberg, F. R.↗
NASA NTRS1979

Characterization of defect growth structures in ion plated films by scanning electron microscopy

Gold and copper films (0.2-2 micron thick) are ion plated on very smooth stainless steel 304 and mica surfaces. The deposited films are examined by SEM to identify the morphological growth of defects. Three types of coating defects are distinguished: nodular growth, abnormal or runaway growth, and spits. The potential nucleation sites for defect growth are analyzed to determine the cause of defect formation. It is found that nuclear growth is due to inherent surface microdefects, abnormal or runaway growth is due to external surface inclusions, and spits are due to nonuniform evaporation and ejection of droplets. All these defects have adverse effects on the coatings.

Spalvins, T.↗
NASA NTRS1981

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗
NASA NTRS1981

Flaw criticality of circular disbond defects in compressive laminates

The compressive behavior of T300/5208 graphite-epoxy laminates containing circular delaminations was studied to determine the flaw criticality of two types of implanted defect, Kapton bag and Teflon film, on several laminate configurations. Defect size was varied. Results, presented in the form of residual strength curves, indicate that the Teflon film defect reduced strength more than the Kapton bad defect in 12-ply samples, but that two laminates (+ or - 45) sub 2s and (90/+ or - 45) sub s were insensitive to any implanted defect. A clear thickness effect was shown to exist for the (o/+ pr 45) sub ns laminate and was attributed to failure mode transition. The analytically predicted buckling loads show excellent agreement with experimental results and are useful in predicting failure mode transition.

Webster, J. D.↗
NASA NTRS1980

Estimation of uncertainty in isotherms deduced from Hugoniots resulting from shockwave generated defects

The problem of how defect concentrations produced in a shock experiment affect the isothermal equation of state is considered. From the few experimental results available that bear directly on this question, it appears the effect could be substantial, i.e., the pressure in material free of defects may be 10-25% lower at a given volume than the isothermal pressure deduced from Hugoniot data on the assumption that defects are negligible in the shocked material. This correction caused by the presence of defects is called the defect pressure.

Ruoff, A. L.↗
NASA NTRS1982

Defect chemistry and characterization of Hg sub 1x Cd sub x Te

Single crystal samples of undoped and doped Hg sub 1-x Cd sub x Te were annealed at varying temperatures and partial pressures of Hg. Hall effect and mobility measurements were carried out on these samples after quenching to room temperature. Based on the variation of the carrier concentration and the carrier mobility as a function of the partial pressure of Hg temperature, and dopant concentration, defect models were established for the doped and the undoped crystals. These models indicate that the native acceptor defects in both Hg0.8Cd0.2Te and Hg0.6Cd0.4Te doubly ionized and the native donor defects are negligible in concentration, implying that p to n conversion in these alloys occurs due only to residual donors. Incorporation mechanism of copper, indium, iodine, and phosphorus were investigated. A large concentration of indium is found to be paired with the native acceptor defects. Results on crystals doped with phosphorus indicate that phosphorus behaves amphoterically, acting as a donor on Hg lattice sites and as an acceptor intersitially on Te lattice sites. A majority of the phosphorus is found to be present as neutral species formed from the pairing reaction between phosphorus on Hg lattice sites and phosphorus in interstitial sites. Equilibrium constants for the intrinsic excitation reaction, as well as for the incorporation of the different dopants and the native acceptor defects were established.

Vydyanath, H. R.↗
NASA NTRS1981

Study of radiation induced deep-level defects and annealing effects in the proton irradiated AlGaAs-GaAs solar cells

The radiation induced deep-level defects and the recombination parameters in the proton irradiated AlGaAs-GaAs p-n junction solar cells were investigated over a wide range of proton energies (from 50 KeV to 10 MeV) and proton fluences (from 10 to the 10th to 10 to the 13th P/sq cm), using DLTS, I-V, C-V, and SEM-EMIC measurement techniques. The measurements were used to determine the defect and recombination parameters such as defect density and energy level, carrier lifetimes, and the hole diffusion lengths in the GaAs LPE layers. Results show that a good correlation was obtained between the measured defect parameters and the dark recombination current as well as the performance parameters of the solar cells. The most damages to the cell were produced by the 200 KeV protons. In addition, the effects of low temperatures (200 to 400 C) thermal annealing on the deep-level defects and the dark current of the 200 KeV proton irradiated samples were examined.

Li, S. S.↗