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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Controlling the polarization and vortex charge of attosecond high-harmonic beams via simultaneous spin–orbit momentum conservation

Optical interactions are governed by both spin and angular momentum conservation laws, which serve as a tool for controlling light–matter interactions or elucidating electron dynamics and structure of complex systems. Here, we uncover a form of simultaneous spin and orbital angular momentum conservation and show, theoretically and experimentally, that this phenomenon allows for unprecedented control over the divergence and polarization of extreme-ultraviolet vortex beams. High harmonics with spin and orbital angular momenta are produced, opening a novel regime of angular momentum conservation that allows for manipulation of the polarization of attosecond pulses—from linear to circular—and for the generation of circularly polarized vortices with tailored orbital angular momentum, including harmonic vortices with the same topological charge as the driving laser beam. As a result, our work paves the way to ultrafast studies of chiral systems using high-harmonic beams with designer spin and orbital angular momentum.

High-harmonic generation↗
DOE OSTI2015

Accessing conjugated polymers with precisely controlled heterobisfunctional chain ends via post-polymerization modification of the OTf group and controlled Pd(0)/t-Bu 3 P-catalyzed Suzuki cross-coupling polymerization

In this study, a general strategy toward the synthesis of well-defined conjugated polymers with controlled heterobisfunctional chain ends via combination of controlled Pd(0)/t-Bu 3 P Suzuki cross-coupling polymerization with the post-polymerization modification of the triflate (OTf) group was disclosed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Controlling 3-D Morphology of Ni-Fe-Based Nanocatalysts for Oxygen Evolution Reaction

Controlling the 3-D morphology of nanocatalysts is one of the underexplored but important approaches for improving the sluggish kinetics of the oxygen evolution reaction (OER) in water electrolysis. This work reports a scalable, oil-based method based on thermal decomposition of organometallic complexes to yield highly uniform Ni–Fe-based nanocatalysts with a well-defined morphology (i.e. Ni–Fe core–shell, Ni/Fe alloy, and Fe–Ni core–shell). Transmission electron microscopy reveals their morphology and composition to be NiOx–FeOx/NiOx core-mixed shell, NiOx/FeOx alloy, and FeOx–NiOx core–shell. X-ray techniques resolve the electronic structures of the bulk and are supported by electron energy loss spectroscopy analysis of individual nanoparticles. These results suggest that the crystal structure of Ni is most likely to contain α-Ni(OH)2 and that the chemical environment of Fe is variable, depending on the morphology of the nanoparticle. The Ni diffusion from the amorphous Ni-based core to the iron oxide shell makes the NiOx–NiOx/FeOx core-mixed shell structure the most active and the most stable nanocatalyst, which outperforms the comparison NiOx/FeOx alloy nanoparticles expected to be active for the OER. This study suggests that the chemical environment of the mixed NiOx/FeOx alloy composition is important to achieve high electrocatalytic activity for the OER and that the 3-D morphology plays a key role in the optimization of the electrocatalytic activity and stability of the nanocatalyst for the OER.

Nanocatalysts↗
DOE OSTI2014

High carrier mobility in orientation-controlled large-grain (≥50 μm) Ge directly formed on flexible plastic by nucleation-controlled gold-induced-crystallization

High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge crystals on flexible-plastic directly formed by nucleation-controlled gold-induced-crystallization (GIC) are examined, and compared with those obtained by aluminum-induced-crystallization (AIC). The Ge crystals show p-type conductions. Here, hole concentrations are 2.2 × 10{sup 17} and 5.8 × 10{sup 20} cm{sup −3} for GIC-Ge and AIC-Ge, respectively, which are explained on the basis of the solubility of Au and Al in Ge. Thanks to the low hole concentration, GIC-Ge shows high hole mobility (160 cm{sup 2} V{sup −1} s{sup −1}) compared with AIC-Ge (37 cm{sup 2} V{sup −1} s{sup −1}). These demonstrate significant advantage of GIC to realize high-performance flexible-electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Near-infrared spectroscopy for divertor plasma diagnosis and control in DIII-D tokamak

New near infrared (NIR) spectroscopic measurements performed in the DIII-D tokamak divertor plasma suggest new viable diagnostic applications: divertor recycling and low-Z impurity flux measurements, a spectral survey for divertor Thomson scattering (DTS) diagnostic, and T{sub e} monitoring for divertor detachment control. A commercial 0.3 m spectrometer coupled to an imaging lens via optical fiber and a InGaAs 1024 pixel array detector enabled deuterium and impurity emission measurements in the range 800–2300 nm. The first full NIR survey identified D, He, B, Li, C, N, O, Ne lines and provided plasma T{sub e}, n{sub e} estimates from deuterium Paschen and Brackett series intensity and Stark line broadening analysis. The range 1.000–1.060 mm was surveyed in high-density and neon seeded divertor plasmas for spectral background emission studies for λ = 1.064 μm laser-based DTS development. The ratio of adjacent deuterium Paschen-α and Brackett Br9 lines in recombining divertor plasmas is studied for divertor T{sub e} monitoring aimed at divertor detachment real-time feedback control.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

A new apparatus design for high temperature (up to 950 °C) quasi-elastic neutron scattering in a controlled gaseous environment

A design for a sample cell system suitable for high temperature Quasi-Elastic Neutron Scattering (QENS) experiments is presented. The apparatus was developed at the Spallation Neutron Source in Oak Ridge National Lab where it is currently in use. The design provides a special sample cell environment under controlled humid or dry gas flow over a wide range of temperature up to 950 °C. Using such a cell, chemical, dynamical, and physical changes can be studied in situ under various operating conditions. While the cell combined with portable automated gas environment system is especially useful for in situ studies of microscopic dynamics under operational conditions that are similar to those of solid oxide fuel cells, it can additionally be used to study a wide variety of materials, such as high temperature proton conductors. The cell can also be used in many different neutron experiments when a suitable sample holder material is selected. The sample cell system has recently been used to reveal fast dynamic processes in quasi-elastic neutron scattering experiments, which standard probes (such as electrochemical impedance spectroscopy) could not detect. In this work, we outline the design of the sample cell system and present results demonstrating its abilities in high temperature QENS experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Generation of localized strain in a thin film piezoelectric to control individual magnetoelectric heterostructures

Experimental results demonstrate the ability of a surface electrode pattern to produce sufficient in-plane strain in a PbZr0.52Ti0.48O3 (PZT) thin film clamped by a Si substrate to control magnetism in a 1000 nm diameter Ni ring. The electrode pattern and the Ni ring/PZT thin film heterostructure were designed using a finite element based micromagnetics code. The magnetoelectric heterostructures were fabricated on the PZT film using e-beam lithography and characterized using magnetic force microscopy. Application of voltage to the electrodes moved one of the “onion” state domain walls. This method enables the development of complex architectures incorporating strain-mediated multiferroic devices.

Cui, Jizhai↗
DOE OSTI2016

Control of excitons in multi-layer van der Waals heterostructures

We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of MoS{sub 2} and hexagonal boron nitride. The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Understanding and control of bipolar self-doping in copper nitride

Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu{sub 3}N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu{sub 3}N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu{sub 3}N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu{sub 3}N with 10{sup 17} electrons/cm{sup 3} for low growth temperature (≈35 °C) and p-type with 10{sup 15} holes/cm{sup 3}–10{sup 16} holes/cm{sup 3} for elevated growth temperatures (50 °C–120 °C). Mobility for both types of Cu{sub 3}N was ≈0.1 cm{sup 2}/Vs–1 cm{sup 2}/Vs. Additionally, temperature-dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that V{sub Cu} defects form preferentially in p-type Cu{sub 3}N, while Cu{sub i} defects form preferentially in n-type Cu{sub 3}N, suggesting that Cu{sub 3}N is a compensated semiconductor with conductivity type resulting from a balance between donor and acceptor defects. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar doping in Cu{sub 3}N that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials and provide a framework that can be applied when considering the properties of such materials in general.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Deformation of a super-elastic NiTiNb alloy with controllable stress hysteresis

Room temperature deformation of a Ni{sub 46.7}Ti{sub 42.8}Nb{sub 10.5} alloy was studied by in-situ synchrotron X-ray diffraction. Compared to binary NiTi alloy, the Nb dissolved in the matrix significantly increased the onset stress for Stress-Induced Martensite Transformation (SIMT). The secondary phase, effectively a Nb-nanowire dispersion in a NiTi-Nb matrix, increased the elastic stiffness of the bulk material, reduced the strain anisotropy in austenite families by load sharing during SIMT, and increased the stress hysteresis by resisting reverse phase transformation during unloading. The stress hysteresis can be controlled over a wide range by heat treatment through its influences on the residual stress of the Nb-nanowire dispersion and the stability of the austenite.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Controlling shockwave dynamics using architecture in periodic porous materials

Additive manufacturing (AM) is an attractive approach for the design and fabrication of structures capable of achieving controlled mechanical response of the underlying deformation mechanisms. While there are numerous examples illustrating how the quasi-static mechanical responses of polymer foams have been tailored by additive manufacturing, there is limited understanding of the response of these materials under shockwave compression. Dynamic compression experiments coupled with time-resolved X-ray imaging were performed to obtain insights into the in situ evolution of shockwave coupling to porous, periodic polymer foams. We further demonstrate shock wave modulation or “spatially graded-flow” in shock-driven experiments via the spatial control of layer symmetries afforded by additive manufacturing techniques at the micron scale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Contamination control and assay results for the Majorana Demonstrator ultra clean components

The Majorana Demonstrator is a neutrinoless double beta decay experiment utilizing enriched Ge-76 detectors in 2 separate modules inside of a common solid shield at the Sanford Underground Research Facility. The Demonstrator has utilized world leading assay sensitivities to develop clean materials and processes for producing ultra-pure copper and plastic components. This experiment is now operating, and initial data provide new insights into the success of cleaning and processing. Post production copper assays after the completion of Module 1 showed an increase in U and Th contamination in finished parts compared to starting bulk material. A revised cleaning method and additional round of surface contamination studies prior to Module 2 construction have provided evidence that more rigorous process control can reduce surface contamination. In conclusion, this article describes the assay results and discuss further studies to take advantage of assay capabilities for the purpose of maintaining ultra clean fabrication and process design.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control

A defect quasi Fermi level (dQFL) control process based on above bandgap illumination was applied to control H and V N -complexes, which are the main contributors to the passivation and self-compensation, respectively, in Mg:GaN grown via metalorganic chemical vapor deposition. Secondary ion mass spectrometry measurements confirmed that the total Mg incorporation was unaffected by the process. However, the total H concentration was reduced to similar levels obtained by post-growth thermal activation prior to any annealing treatment. Similarly, the 2.8 eV emission in the photoluminescence spectra, attributed to compensating V N and its complexes, was reduced for the dQFL-process samples. After thermal activation and Ni/Au contact deposition, Hall effect measurements revealed lower resistivities (increased mobilities and free hole concentrations) for dQFL-grown samples with Mg doping concentrations above and below 2 × 10 19 cm -3 . All these results demonstrate that the dQFL process can effectively reduce the H-passivation and self-compensation of the Mg:GaN films.

36 MATERIALS SCIENCE↗