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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,009 records · Page 56
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Imaging conductive nano-domains induced by Gd intercalation in epitaxial bilayer graphene

We report nano-infrared (IR) imaging and spectroscopy of epitaxial bilayer graphene (BLG) on silicon carbide (SiC) partially intercalated with gadolinium (Gd). Gd intercalation produces a high density of nanoscale conducting domains that exhibit pronounced IR enhancement at frequencies above the SiC phonon resonance and pronounced amplitude suppression at the resonance. Both effects originate from the increased local optical conductivity induced by Gd. Quantitative modeling of the nano-IR spectra shows that the conductivity of intercalated regions is enhanced by more than a factor of two relative to pristine BLG. This enhancement is attributed to the electronic decoupling of the graphene layers combined with substantial charge transfer from the intercalated atoms. These results demonstrate that controlled metal intercalation enables spatially resolved tuning of the electronic and optical responses of wafer-scale graphene, providing a versatile platform for graphene-based optoelectronic and nanophotonic applications.

Fralaide, Michael [Ames Laboratory, and Iowa State↗
DOE OSTI2025

Come for predictions, stay for complexity: synthesis and experimental probing of ionic conductivity in Li 9 B 19 S 33

Lithium thioborates, despite their potential cost-effectiveness and low density, have received considerably less attention as solid electrolytes compared to their thiophosphate counterparts. A primary obstacle to their widespread investigation has been the inherent challenge in synthesizing single-phase materials. Computational studies have predicted several lithium thioborate phases exhibiting high ionic conductivity, with Li 9 B 19 S 33 notably predicted to reach 80 mS cm −1 . However, experimental validation of these theoretical predictions remains absent. This work addresses this gap by detailing a successful synthesis of the previously elusive Li 9 B 19 S 33 phase, facilitated by in situ temperature dependent powder X-ray diffraction. Our findings reveal the peritectic nature of phase formation, necessitating an excess of boron sulfide in the reaction mixture. We further present a comprehensive structural characterization of Li 9 B 19 S 33 utilizing spectroscopic techniques like NMR, FT-IR, and diffuse reflectance and report on its ionic conductivity. Solid-state 6 Li NMR line narrowing experiments revealed an ion mobility activation energy of 0.26 eV whereas activation energies derived from impedance spectroscopy measurements were significantly higher, resulting in lower than theoretically predicted ionic conductivity.

Oppong, Richeal A. [Iowa State Univ., Ames, IA (Un↗
DOE OSTI2020

Thermal transport exceeding bulk heat conduction due to nonthermal micro/nanoscale phonon populations

While classical size effects usually lead to a reduced effective thermal conductivity, we report here that nonthermal phonon populations produced by a micro/nanoscale heat source can lead to enhanced heat conduction, exceeding the prediction from Fourier's law. We study nondiffusive thermal transport by phonons at small distances within the framework of the Boltzmann transport equation (BTE) and demonstrate that the transport is significantly affected by the distribution of phonons emitted by the source. We discuss analytical solutions of the steady-state BTE for a source with a sinusoidal spatial profile, as well as for a three-dimensional Gaussian “hot spot,” and provide numerical results for single crystal silicon at room temperature. If a micro/nanoscale heat source produces a thermal phonon distribution, it gets hotter than that predicted by the heat diffusion equation; however, if the source predominantly produces low-frequency acoustic phonons with long mean free paths, it may get significantly cooler than that predicted by the heat equation, yielding an enhanced heat transport beyond bulk heat conduction.

42 ENGINEERING↗
DOE OSTI2020

Wide bandwidth frequency-domain thermoreflectance: Volumetric heat capacity, anisotropic thermal conductivity, and thickness measurements

A frequency-domain thermoreflectance (FDTR) system with a frequency range of 1 Hz to 75 MHz is presented. The wide bandwidth of pump modulation frequency enables enhanced simultaneous thermophysical property characterization of bulk and thin-film materials. The wide bandwidth FDTR system is demonstrated with simultaneous measurements of in-plane and cross-plane thermal conductivities of sapphire and muscovite mica, thickness and thermal conductivity of gold/titanium thin films, and isotropic thermal conductivity and volumetric heat capacity of lithium niobate and silicon. Thermophysical properties measured with FDTR are compared to literature values or independent measurements for verification. Finally, at low frequencies, a negligible error was achieved in the numerical integration of the heat diffusion equation with a Gauss–Legendre quadrature method solved with 400 integration points and an upper integration limit of 16weff, where weff is the effective pump–probe 1/e2 radius.

Ziade, Elbara (ORCID:0000000249020497)↗
DOE OSTI2021

Thermal conductivity of the n = –5 and 10 members of the (SrTiO 3 ) n SrO Ruddlesden–Popper superlattices

Unlike many superlattice structures, Ruddlesden–Popper phases have atomically abrupt interfaces useful for interrogating how periodic atomic layers affect thermal properties. Here, we measure the thermal conductivity in thin films of the n = 1–5 and 10 members of the (SrTiO 3 ) n SrO Ruddlesden–Popper superlattices grown by molecular-beam epitaxy and compare the results to a single crystal of the n = 1 Ruddlesden–Popper SrLaAlO 4 . The thermal conductivity cross-plane to the superlattice layering (k 33 ) is measured using time-domain thermoreflectance as a function of temperature and the results are compared to first-principles calculations. The thermal conductivity of this homologous series decreases with increasing interface density. Characterization by x-ray diffraction and scanning transmission electron microscopy confirms that these samples have a Ruddlesden–Popper superlattice structure.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thermal conductivity of multilayer polymer-nanocomposite thin films

The development of electrical insulators that are thermally conducting is critical for thermal management applications in many advanced electronics and electrical devices. Here, we synthesized polymer nanocomposite (PNC) films composed of polymers [polyethylenimine, poly(vinylamine), poly(acrylic acid), and poly(ethylene oxide)] and dielectric fillers (montmorillonite clay and hexagonal boron nitride) by layer-by-layer technique. The cross-plane thermal conductivity (k⊥) of the film was measured by the 3ω method. The effect of various factors such as film growth, filler type, filler volume fraction, polymer chemical structures, and temperature on the thermal conductivity is reported. The k⊥ of PNCs with thickness from 37 nm to 1.34 μm was found to be in the range of 0.11 to 0.21 ± 0.02 W m−1 K−1. The k⊥ values were found to be lower than the constituent polymer matrix. The experimental result is compared with existing theoretical models of nanocomposite systems to get insight into heat transfer behavior in such layered films composed of dielectrics and polymers.

Physics↗
DOE OSTI2023

The influence of counterion structure identity on conductivity, dynamical correlations, and ion transport mechanisms in polymerized ionic liquids

We used equilibrium and non-equilibrium atomistic simulations to probe the influence of anion chemistry on the true conductivity, dynamical correlations, and ion transport mechanisms in polymeric ionic liquids. An inverse correlation was found between anion self-diffusivities, ionic mobilities, and the anion size for spherical anions. While some larger asymmetric anions had higher diffusivities than smaller spherical anions, their diffusivities and mobilities did not exhibit a direct correlation to the anion volumes. Here, the conductivity and anion dynamical correlations also followed the same trends as displayed by the diffusivity and mobility of anions. All the systems we examined displayed positively correlated motion among anions, suggesting a contribution that enhances the conductivity beyond the ideal Nernst–Einstein value. Analysis of ion transport mechanisms demonstrated very similar hopping characteristics among the spherical anions despite differences in their sizes.

36 MATERIALS SCIENCE↗
DOE OSTI2024

DC electrical conductivity measurements of warm dense matter using ultrafast THz radiation

We describe measurements of the DC electrical conductivity of warm dense matter using ultrafast terahertz (THz) pulses. THz fields are sufficiently slowly varying that they behave like DC fields on the timescale of electron–electron and electron–ion interactions and hence probe DC-like responses. Using a novel single-shot electro-optic sampling technique, the electrical conductivity of the laser-generated warm dense matter was determined with <1 ps temporal resolution. We present the details of the single-shot THz detection methodology as well as considerations for warm dense matter experiments. We, then, provide proof-of-concept studies on aluminum driven to the warm dense matter regime through isochoric heating and shock compression. Our results indicate a decrease in the conductivity when driven to warm dense matter conditions and provide a platform for future warm dense matter studies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Nanoscale control of LaAlO 3 /SrTiO 3 conductance beyond the polar catastrophe

Conductive atomic force microscope (c-AFM) lithography can be utilized to create a wide range of LaAlO 3 /SrTiO 3 (LAO/STO)-based nanoelectronic devices in a reconfigurable manner. Experiments were generally performed with intrinsically insulating LAO/STO heterostructures, with LAO thickness less than the critical value at which a polar catastrophe takes place [<4 unit cell (u.c.)]. Here, we use inductively coupled plasma reactive ion etching (ICPRIE) to fabricate c-AFM “canvases” on intrinsically conducting LAO/STO samples with ≥4 u.c. LAO. We observe that its interfacial two-dimensional electron gas (2DEG) can be pinched off and then switched back on by c-AFM lithography. Nanowires created with initially conductive LAO/STO interfaces have an order-of-magnitude longer lifetime in ambient conditions, when compared to an identically created 3.4 u.c. LAO/STO nanowire. We also demonstrate key nanoscale properties such as ballistic transport in a quasi-one-dimensional electron waveguide at a 5 u.c. LAO/STO interface. This approach frees c-AFM-written nanodevice designs from time constraints in air associated with <4 u.c. LAO/STO heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Modeling of transient conduction in building envelope assemblies: A review

As buildings age, retrofits are becoming an increasingly important topic for the ever-growing and aging existing building stock. To compare designs or evaluate in-service building envelopes, thermal modeling is utilized to evaluate the thermal performance of envelope assemblies; however, it can be difficult to model the thermal performance of as-built assemblies due to degradation or missing documentation. To address this issue, inverse modeling can be applied to infer the properties of as-built envelope assemblies. This paper presents a review of the literature and published methods to model and infer the transient conductive performance of building envelopes. This review serves as a survey of existing transient conduction algorithms to evaluate performance, computational speed, and relevance for inverse modeling applications. In addition to the literature review, this work also evaluates the computational performance of the most prevalent transient conduction algorithms against the ASHRAE 1052RP toolkit to assess inverse modeling potential. This methodology serves as a foundation for future research to characterize the transient thermal performance of as-built building envelope assemblies.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2020

Multi-metallic conduction cooled superconducting radio-frequency cavity with high thermal stability

Superconducting radio-frequency cavities are commonly used in modern particle accelerators for applied and fundamental research. Such cavities are typically made of high-purity, bulk Nb and with cooling by a liquid helium bath at a temperature of ~2 K. The size, cost and complexity of operating a particle accelerator with a liquid helium refrigerator make the current cavity technology not favorable for use in industrial-type accelerators. We have developed a multi-metallic 1.495 GHz elliptical cavity conductively cooled by a cryocooler. The cavity has a ~2 µm thick layer of Nb 3 Sn on the inner surface, exposed to the rf field, deposited on a ~3 mm thick bulk Nb shell and a bulk Cu shell, of thickness $\geqslant\! 5$ mm deposited on the outer surface by electroplating. A bolt-on Cu plate 1.27 cm thick was used to thermally connect the cavity equator to the second stage of a Gifford-McMahon cryocooler with a nominal capacity of 2 W at 4.2 K. The cavity was tested initially in liquid helium at 4.3 K and reached a peak surface magnetic field of ~36 mT with a quality factor of 2 × 10 9 . The cavity cooled by the cryocooler achieved a peak surface magnetic field of ~29 mT, equivalent to an accelerating gradient of 6.5 MV m –1 . The conduction-cooled cavity could be operated in continuous-wave with as high as 5 W dissipation in the cavity for 1 h without any thermal breakdown, because of the Cu outer layer with high thermal conductivity. This result represents a paradigm shift in the technology of superconducting accelerator cavities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

P-type conductivity in Sn-doped Sb 2 Se 3

Abstract Antimony selenide (Sb 2 Se 3 ) is a promising absorber material for thin-film photovoltaics. However, certain areas of fundamental understanding of this material remain incomplete and this presents a barrier to further efficiency gains. In particular, recent studies have highlighted the role of majority carrier type and extrinsic doping in drastically changing the performance of high efficiency devices (Hobson et al 2020 Chem. Mater. 32 2621–30). Herein, Sn-doped Sb 2 Se 3 bulk crystals are shown to exhibit p-type conductivity using Hall effect and hot-probe measurements. The measured conductivities are higher than those achieved through native defects alone, but with a carrier density (up to 7.4 × 10 14 cm −3 ) several orders of magnitude smaller than the quantity of Sn included in the source material. Additionally, a combination of ultraviolet, x-ray and hard x-ray photoemission spectroscopies are employed to obtain a non-destructive depth profile of the valence band maximum, confirming p-type conductivity and indicating a majority carrier type inversion layer at the surface. Finally, these results are supported by density functional theory calculations of the defect formation energies in Sn-doped Sb 2 Se 3 , showing a possible limit on the carrier concentration achievable with Sn as a dopant. This study sheds light on the effectiveness of Sn as a p-type dopant in Sb 2 Se 3 and highlights avenues for further optimisation of doped Sb 2 Se 3 for solar energy devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Temperature-dependent Spectral Emission of Hexagonal Boron Nitride Quantum Emitters on Conductive and Dielectric Substrates

We report a reduction in the linewidth and suppression of spectral diffusion of quantum emitters in hexagonal boron nitride supported on a conductive substrate. In this work, we observe a temperature-dependent reduction in the spectral emission linewidth for CVD-grown and exfoliated crystals on conductive ITO relative to those seen on silicon dioxide (SiO 2 ) substrates. We show that the inhomogeneous linewidth can be suppressed by 45% as a result of using a conductive substrate. We investigate the zero-phonon line profile at temperatures ranging from 4 to 300 K and decompose the effects of thermal broadening and spectral diffusion at each temperature by Voigt fitting. The temperature dependence of homogeneous and inhomogeneous components of the broadening is discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Optical conductivity of the type-II Weyl semimetal TaIrTe 4

TaIrTe4 is an example of a candidate Weyl type-II semimetal with a minimal possible number of Weyl nodes. Four nodes are reported to exist a single plane in k-space. The existence of a conical dispersion linked to Weyl nodes has yet to be shown experimentally. Here we use optical spectroscopy as a probe of the band structure on a low-energy scale. Studying optical conductivity allows us to probe intraband and interband transitions with zero momentum. In TaIrTe 4 , we observe a narrow Drude contribution and an interband conductivity that may be consistent with a tilted linear band dispersion up to 40 meV. The interband conductivity allows us to establish the effective parameters of the conical dispersion; effective velocity v = 1.1 · 10 4 m/s and tilt γ = 0.37. The transport data, Seebeck and Hall coefficients, are qualitatively consistent with conical features in the band structure. Quantitative disagreement may be linked to the multiband nature of TaIrTe 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Thermal conductance enhanced via inelastic phonon transport by atomic vacancies at Cu/Si interfaces

Understanding and controlling heat transfer across interfaces has become an important issue for the performance of micro- and nanoscale electronics, as well as achieving a high figure of merit for thermoelectrics. Intrinsic and extrinsic defects can have a significant impact on thermal transport in bulk materials and across interfaces, but the mechanism is not well understood. Here, nonequilibrium molecular dynamics simulations are used to determine the impact of interfacial atomic vacancies on thermal transport across a Cu/Si junction. In contrast to the reduction in thermal transport typically seen with bulk defects, we find that by introducing atomic vacancies at a concentration of 6.3% near the interface in either or both materials, the interfacial thermal conductance can be increased by up to 76%. By controlling the initial positions of the vacancies and keeping track of their movements and population, we find that interfacial thermal transport is dependent on temperature, vacancy concentration, and distribution, and a positive correlation between the conductance and point defect activities (extent of vacancy migration, rate of Frenkel defect creation and annihilation) is observed. Further calculations based on the phonon density of states and normal mode decomposition reveal that the increase in interfacial thermal conductance originates primarily from high-frequency phonons, supported by enhanced inelastic phonon transport which contributes to more than 60% of the increase. Our findings suggest a practical way to manipulate inelastic phonon conversion through the presence of defects, which provides an alternative perspective on improving thermal transport between materials with a large lattice mismatch.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Conductivity of superconductors in the flux flow regime

Here, we develop a theory of conductivity of type-II superconductors in the flux flow regime taking into account random spatial fluctuations of the system parameters, such as the gap magnitude Δ(r) and the diffusion coefficient $\textit{D}$(r). We find a contribution to the conductivity that is proportional to the inelastic relaxation time $τ_{\text{in}}$, which is much longer than the elastic relaxation time. This contribution is due to Debye-type relaxation, and it can be much larger than the conventional flux flow conductivity due to Bardeen and Stephen. The new contribution is expected to dominate in clean superconductors at low temperatures and in magnetic fields much smaller than $H_{\text{c2}}$.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Conductance of a dissipative quantum dot: Nonequilibrium crossover near a non-Fermi-liquid quantum critical point

In this work, we find the nonlinear conductance of a dissipative resonant level in the nonequilibrium steady state near its quantum critical point. The system consists of a spin-polarized quantum dot connected to two resistive leads that provide ohmic dissipation. We focus on the crossover from the strong-coupling, non-Fermi-liquid regime to the weak-coupling, Fermi-liquid ground state, a crossover driven by the instability of the quantum critical point to hybridization asymmetry or detuning of the level in the dot. We show that the crossover properties are given by tunneling through an effective single barrier described by the boundary sine-Gordon model. The nonlinear conductance is then obtained from thermodynamic Bethe ansatz results in the literature, which were developed to treat tunneling in a Luttinger liquid. The current-voltage characteristics are thus found for any value of the resistance of the leads. For the special case of lead resistance equal to the quantum resistance, we find mappings onto, first, the two-channel Kondo model and, second, an effectively noninteracting model from which the nonlinear conductance is found analytically. A key feature of the general crossover function is that the nonequilibrium crossover driven by applied bias is different from the crossover driven by temperature---we find that the nonequilibrium crossover is substantially sharper. Finally, we compare to experimental results for both the bias and temperature crossovers: the agreement is excellent.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Breakdown of helical edge state topologically protected conductance in time-reversal-breaking excitonic insulators

Gapless helical edge modes are a hallmark of the quantum spin Hall effect. Protected by time-reversal symmetry, each edge contributes a quantized zero-temperature conductance quantum G 0 ≡ e 2 /h. However, the experimentally observed conductance in WT e2 decreases below G 0 per edge already at edge lengths around 100 nm, even in the absence of explicit time-reversal breaking due to an external field or magnetic impurities. Here we show how a time-reversal breaking excitonic condensate with a spin-spiral order that can form in WT e2 leads to the breakdown of conductance quantization. We perform Hartree-Fock calculations to compare time-reversal breaking and preserving excitonic insulators. Using these mean-field models we demonstrate via quantum transport simulations that weak nonmagnetic disorder reproduces the edge length scaling of resistance observed in the experiments. We complement this by analysis in the Luttinger liquid picture, shedding additional light on the mechanism behind the quantization breakdown.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗